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1. 发明授权

US08795435B2 Susceptor, coating apparatus and coating method using the susceptor 有权
标题翻译：受体，涂层装置和使用感受器的涂布方法
公开(公告)号：US08795435B2
公开(公告)日：2014-08-05
申请号：US12828963
申请日：2010-07-01
申请人： Shinya Higashi , Hironobu Hirata
发明人： Shinya Higashi , Hironobu Hirata
IPC分类号： C23C16/00 , C23C16/458 , C23C16/46
CPC分类号： H01L21/68785 , C23C16/4586 , H01L21/68735
摘要： In accordance with the embodiment of the present invention, there is provided a susceptor which includes an annular first susceptor portion for supporting the peripheral portion of a silicon wafer and further includes a second susceptor portion provided in contact with the peripheral portion of the first susceptor portion and covering the opening of the first susceptor portion. The second susceptor portion is disposed so that, when the silicon wafer is supported on the first susceptor portion, a gap of a predetermined size is formed between the silicon wafer and the second susceptor portion, and so that another gap of a size substantially equal to the predetermined size and directly connected to the above gap is formed between the first susceptor portion and the second susceptor portion.
摘要翻译：根据本发明的实施例，提供了一种基座，其包括用于支撑硅晶片的周边部分的环形第一基座部分，并且还包括设置成与第一基座部分的周边部分接触的第二基座部分并且覆盖第一感受器部分的开口。第二感受体部分被设置成使得当硅晶片被支撑在第一基座部分上时，在硅晶片和第二基座部分之间形成预定尺寸的间隙，并且使得尺寸基本等于在第一基座部分和第二基座部分之间形成直接连接到上述间隙的预定尺寸。

2. 发明申请

US20100075509A1 MANUFACTURING METHOD AND MANUFACTURING APPARATUS FOR SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件的制造方法和制造设备
公开(公告)号：US20100075509A1
公开(公告)日：2010-03-25
申请号：US12563602
申请日：2009-09-21
申请人： Hironobu Hirata , Masayoshi Yajima , Yoshikazu Moriyama
发明人： Hironobu Hirata , Masayoshi Yajima , Yoshikazu Moriyama
IPC分类号： H01L21/316 , B05C11/00
CPC分类号： H01L21/02299 , C23C16/46 , H01L21/02164 , H01L21/02236 , H01L21/67109 , H01L21/67751
摘要： A manufacturing method for a semiconductor device, including: loading a wafer into a reaction chamber; placing the wafer on a push-up shaft moved up; preheating the wafer under controlling an in-plane temperature distribution of the wafer to be a recess state under a state of placing the wafer on the push-up shaft moved up; lowering the push-up shaft with the wafer kept in the recess state to hold the wafer on a wafer holding member; heating the wafer to a predetermined temperature; rotating the wafer; and supplying a process gas onto the wafer.
摘要翻译：一种半导体器件的制造方法，包括：将晶片装载到反应室中; 将晶片放置在上推轴上; 在将晶片放置在上推轴上的状态下，将晶片的面内温度分布控制为凹陷状态来预热晶片; 在晶片保持处于凹状状态的同时降低上推轴将晶片保持在晶片保持构件上; 将晶片加热至预定温度; 旋转晶片; 并将工艺气体供应到晶片上。

3. 发明申请

US20070026148A1 Vapor phase deposition apparatus and vapor phase deposition method 审中-公开
标题翻译：气相沉积装置和气相沉积方法
公开(公告)号：US20070026148A1
公开(公告)日：2007-02-01
申请号：US11494674
申请日：2006-07-28
申请人： Hideki Arai , Hironobu Hirata , Yoshikazu Moriyama , Shinichi Mitani
发明人： Hideki Arai , Hironobu Hirata , Yoshikazu Moriyama , Shinichi Mitani
IPC分类号： C23C16/00
CPC分类号： C23C16/4584 , C23C16/4585 , C30B25/12 , C30B25/14
摘要： A vapor phase deposition apparatus includes a chamber, a support table which is accommodated in the chamber and supports a substrate in the chamber, a first passage which supplies a gas to form a film and is connected to the chamber, and a second passage which discharges the gas and is connected to the chamber, the support table is provided with a plurality of first projecting portions to constrain a substantially horizontal movement in the same direction as a substrate surface with respect to the substrate, and the substrate is supported on a surface to come in contact with a back face of the substrate.
摘要翻译：气相沉积设备包括：室，容纳在腔室中的支撑台，并且在腔室中支撑衬底;提供气体以形成膜并连接到腔室的第一通道;以及第二通道，气体并连接到腔室，支撑台设置有多个第一突出部分，以相对于衬底在与衬底表面相同的方向上约束基本上水平的运动，并且衬底被支撑在表面上与基板的背面接触。

4. 发明申请

US20120291697A1 MANUFACTURING APPARATUS AND METHOD FOR SEMICONDUCTOR DEVICE 有权
标题翻译：制造设备和半导体器件的方法
公开(公告)号：US20120291697A1
公开(公告)日：2012-11-22
申请号：US13473275
申请日：2012-05-16
申请人： Kunihiko Suzuki , Hironobu Hirata
发明人： Kunihiko Suzuki , Hironobu Hirata
IPC分类号： C30B25/10 , C30B25/12
CPC分类号： C30B25/10 , C23C16/4584 , C23C16/4586 , C23C16/46 , C30B25/12
摘要： An apparatus for manufacturing a semiconductor device includes an out-heater including a heater element formed in an annular shape with a disconnected portion at one place, a first electrode component connected to a first heater electrode part of the heater element, a second electrode component connected to a second heater electrode part of the heater element, and a base including a first groove in which the first electrode component is fixedly disposed, and a second groove in which the second electrode component is movably disposed and a groove width in a circumferential direction of the heater element is formed such that a width of a second gap formed between a side of the second electrode component and an inner wall of the groove is wider than a width of a first gap formed between a side of the first electrode component and an inner wall of the first groove.
摘要翻译：一种用于制造半导体器件的装置，包括：外加热器，包括形成为环状的加热元件，其一端具有断开部分，第一电极部件连接到加热器元件的第一加热电极部分，第二电极部件连接到第一加热元件的第二加热电极部分，以及包括第一电极部分固定地设置的第一槽和第二电极部分可移动地设置的第二槽和沿圆周方向的槽宽度的基座加热器元件形成为使得形成在第二电极部件的侧面和槽的内壁之间的第二间隙的宽度比形成在第一电极部件的侧面和内部部分的内部的第一间隙的宽度宽第一槽的墙。

5. 发明授权

US08257499B2 Vapor phase deposition apparatus and vapor phase deposition method 有权
标题翻译：气相沉积装置和气相沉积方法
公开(公告)号：US08257499B2
公开(公告)日：2012-09-04
申请号：US12030058
申请日：2008-02-12
申请人： Kunihiko Suzuki , Hideki Arai , Hironobu Hirata
发明人： Kunihiko Suzuki , Hideki Arai , Hironobu Hirata
IPC分类号： C23C16/455 , C23C16/458 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45589 , C23C16/45508 , C23C16/45519 , C23C16/4585
摘要： A vapor phase deposition apparatus includes: a chamber, a supply unit configured to supply a raw gas into the chamber, a support table disposed in the chamber and configured to support a substrate in the chamber, a rotatable bladed wheel configured to have a plurality of blades, to be arranged to surround the support table, and to discharge the raw gas from above the substrate, and a exhaust unit configured to exhaust the raw gas discharged by the bladed wheel after a vapor phase deposition reaction from the chamber.
摘要翻译：气相沉积设备包括：腔室，被配置成将原料气体供应到腔室中的供应单元，设置在腔室中并构造成支撑腔室中的基底的支撑台，构造成具有多个叶片，其被布置成围绕支撑台，并且从基板的上方排出原料气体;以及排气单元，其被配置为在来自所述室的气相沉积反应之后排出由叶轮排出的原料气体。

6. 发明申请

US20120184054A1 MANUFACTURING APPARATUS AND METHOD FOR SEMICONDUCTOR DEVICE 有权
标题翻译：制造设备和半导体器件的方法
公开(公告)号：US20120184054A1
公开(公告)日：2012-07-19
申请号：US13350102
申请日：2012-01-13
申请人： Kunihiko SUZUKI , Hironobu HIRATA
发明人： Kunihiko SUZUKI , Hironobu HIRATA
IPC分类号： H01L21/205 , C23C16/52 , C23C16/455
CPC分类号： C23C16/4401 , C23C16/24 , C23C16/4412
摘要： Provided is a semiconductor manufacturing apparatus including: a reaction chamber including a gas supply inlet and a gas exhaust outlet, and into which a wafer is to be introduced; a process gas supply mechanism that supplies process gas into the reaction chamber from the gas supply inlet of the reaction chamber; a wafer retaining member that is arranged in the reaction chamber and that retains the wafer; a heater that heats the wafer retained by the wafer retaining member to a predetermined temperature; a rotation drive control mechanism that rotates the wafer retaining member together with the wafer; a gas exhaustion mechanism that exhausts gas in the reaction chamber from the gas exhaust outlet of the reaction chamber; and a drain that is disposed at a bottom portion near a wall surface in the reaction chamber and that collects and discharges oily silane that drips from the wall surface.
摘要翻译：提供一种半导体制造装置，包括：反应室，包括气体供给入口和排气出口，并且其中将引入晶片; 处理气体供给机构，其从所述反应室的气体供给口向所述反应室供给处理气体; 晶片保持构件，其布置在所述反应室中并保持所述晶片; 将由晶片保持构件保持的晶片加热到预定温度的加热器; 旋转驱动控制机构，其使晶片保持构件与晶片一起旋转; 气体排出机构，其从反应室的排气口排出反应室中的气体; 以及设置在反应室内的壁面附近的底部并排出从壁面滴下的油性硅烷的排水管。

7. 发明申请

US20110171380A1 SUSCEPTOR, COATING APPARATUS AND COATING METHOD USING THE SUSCEPTOR 有权
标题翻译： SUSCEPTOR，涂层设备和使用SUSCEPTOR的涂层方法
公开(公告)号：US20110171380A1
公开(公告)日：2011-07-14
申请号：US12828963
申请日：2010-07-01
申请人： Shinya HIGASHI , Hironobu Hirata
发明人： Shinya HIGASHI , Hironobu Hirata
IPC分类号： C23C16/46 , C23C16/458 , C23C16/00
CPC分类号： H01L21/68785 , C23C16/4586 , H01L21/68735
摘要： In accordance with the embodiment of the present invention, there is provided a susceptor which includes an annular first susceptor portion for supporting the peripheral portion of a silicon wafer and further includes a second susceptor portion provided in contact with the peripheral portion of the first susceptor portion and covering the opening of the first susceptor portion. The second susceptor portion is disposed so that, when the silicon wafer is supported on the first susceptor portion, a gap of a predetermined size is formed between the silicon wafer and the second susceptor portion, and so that another gap of a size substantially equal to the predetermined size and directly connected to the above gap is formed between the first susceptor portion and the second susceptor portion.
摘要翻译：根据本发明的实施例，提供了一种基座，其包括用于支撑硅晶片的周边部分的环形第一基座部分，并且还包括设置成与第一基座部分的周边部分接触的第二基座部分并且覆盖第一感受器部分的开口。第二感受体部分被设置成使得当硅晶片被支撑在第一基座部分上时，在硅晶片和第二基座部分之间形成预定尺寸的间隙，并且使得尺寸基本等于在第一基座部分和第二基座部分之间形成直接连接到上述间隙的预定尺寸。

8. 发明申请

US20090239362A1 APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的装置及制造半导体器件的方法
公开(公告)号：US20090239362A1
公开(公告)日：2009-09-24
申请号：US12406796
申请日：2009-03-18
申请人： Hironobu Hirata , Shinichi Mitani
发明人： Hironobu Hirata , Shinichi Mitani
IPC分类号： H01L21/20 , B05C11/00 , B05C1/00
CPC分类号： H01L29/7813 , C23C16/45591 , C23C16/4584 , C23C16/46 , C30B25/14 , C30B29/06 , H01L21/67109 , H01L21/67115 , H01L29/0634
摘要： An apparatus for manufacturing a semiconductor device, including in a reaction chamber: a rotor provided with a holding member holding a wafer thereon and a heater heating the wafer therein; a rotation drive mechanism; a gas supply mechanism; a gas exhaust mechanism; and a rectifying plate for rectifying the supplied process gas to supply the rectified gas, and including: an annular rectifying fin mounted on a lower portion of the plate, having a larger lower end inside diameter than an upper end inside diameter thereof and downward rectifying gas exhausted in an outer circumferential direction from above the wafer; and a distance control mechanism controlling a vertical distance between the plate and the wafer and a vertical distance between the fin and the rotor top face to be predetermined distances, respectively, thereby providing higher film formation efficiency.
摘要翻译：一种用于制造半导体器件的装置，包括在反应室中：设置有保持晶片的保持构件的转子和在其中加热晶片的加热器; 旋转驱动机构; 供气机构; 排气机构; 以及整流板，用于对所提供的处理气体进行整流以供应整流气体，并且包括：安装在板的下部的环形整流翅片，其具有比其上端内径更大的下端内径和向下的整流气体从晶片上方沿外周方向排出; 以及控制板和晶片之间的垂直距离和翅片与转子顶面之间的垂直距离的距离控制机构分别为预定距离，从而提供更高的成膜效率。

9. 发明申请

US20080032036A1 MANUFACTURING APPARATUS FOR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE 失效
标题翻译：用于半导体器件的制造装置和半导体器件的制造方法
公开(公告)号：US20080032036A1
公开(公告)日：2008-02-07
申请号：US11828771
申请日：2007-07-26
申请人： Hideki ITO , Shinichi Mitani , Hironobu Hirata
发明人： Hideki ITO , Shinichi Mitani , Hironobu Hirata
IPC分类号： C23C16/00 , B05C11/00 , C23C16/52
CPC分类号： C23C16/46 , C23C16/52 , C30B25/105 , C30B25/16 , H01L21/67115
摘要： A manufacturing apparatus for a semiconductor includes a reaction chamber into which a wafer is introduced, gas supply unit for supplying a gas to the reaction chamber, gas exhaust unit for exhausting the gas from the reaction chamber, a holder for holding the wafer at an outer circumferential part of the wafer, a first heater for heating the wafer from below, a reflector provided above the holder, and a drive mechanism for driving the reflector.
摘要翻译：一种用于半导体的制造装置，包括：引入晶片的反应室，向反应室供给气体的气体供给单元，从反应室排出气体的排气单元，将晶片保持在外部的保持体晶片的圆周部分，用于从下方加热晶片的第一加热器，设置在保持器上方的反射器和用于驱动反射器的驱动机构。

10. 发明申请

US20090068851A1 SUSCEPTOR, MANUFACTURING APPARATUS FOR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于半导体器件的半导体器件的制造装置和半导体器件的制造方法
公开(公告)号：US20090068851A1
公开(公告)日：2009-03-12
申请号：US12207754
申请日：2008-09-10
申请人： Hironobu Hirata , Yoshikazu Moriyama , Masayoshi Yajima , Shinichi Mitani
发明人： Hironobu Hirata , Yoshikazu Moriyama , Masayoshi Yajima , Shinichi Mitani
IPC分类号： H01L21/31 , C23C14/50
CPC分类号： C23C16/4584 , C23C16/4585 , C23C16/46 , H01L21/68742 , H01L21/6875 , H01L21/68764
摘要： A susceptor of the present invention includes an inner susceptor having a diameter smaller than a diameter of a wafer w and a protruding part for placing the wafer w on a surface thereof, and an outer susceptor having an opening in the central portion thereof, a first step section for placing the inner susceptor so as to block the opening and a second step section provided above the first step section for placing the wafer.
摘要翻译：本发明的感受体包括直径小于晶片w的直径的内基座和用于将晶片w放置在其表面上的突出部分，以及在其中心部分具有开口的外基座，第一步骤部分，用于放置内部基座以阻挡开口;以及第二台阶部分，设置在第一台阶部分之上用于放置晶片。

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