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1. 发明申请

US20110233765A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110233765A1
公开(公告)日：2011-09-29
申请号：US13028419
申请日：2011-02-16
申请人： Motoaki TANI , Shinya Iijima , Shinichi Sugiura , Hiromichi Watanabe
发明人： Motoaki TANI , Shinya Iijima , Shinichi Sugiura , Hiromichi Watanabe
IPC分类号： H01L23/48 , H01L21/52
CPC分类号： H01L23/49811 , H01L21/563 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/81 , H01L2224/02166 , H01L2224/02311 , H01L2224/02313 , H01L2224/02331 , H01L2224/0239 , H01L2224/0345 , H01L2224/03912 , H01L2224/0401 , H01L2224/05009 , H01L2224/05024 , H01L2224/05166 , H01L2224/05567 , H01L2224/05644 , H01L2224/0603 , H01L2224/06102 , H01L2224/09103 , H01L2224/1134 , H01L2224/11462 , H01L2224/11472 , H01L2224/13014 , H01L2224/13021 , H01L2224/13023 , H01L2224/13024 , H01L2224/13144 , H01L2224/13147 , H01L2224/1403 , H01L2224/141 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2224/81203 , H01L2224/81205 , H01L2224/81444 , H01L2224/81801 , H01L2224/83104 , H01L2224/92 , H01L2224/92125 , H01L2224/94 , H01L2924/00014 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01061 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/14 , H01L2924/00 , H01L2924/00012 , H01L2224/80203 , H01L2224/11 , H01L21/78 , H01L2224/81 , H01L2924/01047 , H01L2224/05552
摘要： A semiconductor device includes a first bump that is located over a surface of a semiconductor element, and is formed on a first bump formation face distanced from a back surface of the semiconductor element at a first distance, and a second bump that is located over the surface of the semiconductor element, and is formed on a second bump formation face distanced from the back surface of the semiconductor element at a second distance being longer than the first distance, the second bump having a diameter larger than a diameter of the first bump.
摘要翻译：半导体器件包括位于半导体元件的表面上方的第一凸点，并且形成在距第一距离半导体元件的背面远离的第一凸起形成面和位于半导体元件的上方的第二凸起并且形成在距离半导体元件的背面远离第二距离的第二凸起形成面上，第二距离比第一距离长，第二凸起的直径大于第一凸块的直径。

2. 发明申请

US20080303147A1 HIGH-FREQUENCY CIRCUIT DEVICE AND RADAR 审中-公开
标题翻译：高频电路设备和雷达
公开(公告)号：US20080303147A1
公开(公告)日：2008-12-11
申请号：US12133916
申请日：2008-06-05
申请人： Hiromichi WATANABE , Takashi YONEMOTO , Shinichi SUGIURA
发明人： Hiromichi WATANABE , Takashi YONEMOTO , Shinichi SUGIURA
IPC分类号： H01L23/488
CPC分类号： H01L24/10 , G01S7/03 , H01L23/522 , H01L24/13 , H01L24/81 , H01L2224/0554 , H01L2224/05548 , H01L2224/05573 , H01L2224/05644 , H01L2224/13 , H01L2224/13099 , H01L2224/81205 , H01L2224/81206 , H01L2224/81801 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01033 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/12044 , H01L2924/14 , H01L2924/1423 , H01L2924/15787 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A semiconductor chip is provided with a high-frequency circuit. A multi-layer wiring section is comprised of organic material and formed on the semiconductor chip, an outermost layer of the multi-layer wiring section formed with a bump forming portion. A bump is formed on the bump forming portion. The multi-layer wiring section is provided with a reinforcing means for suppressing a deformation of a bonding portion between the bump and the bump forming portion when the high-frequency circuit device is bonded to a substrate with an ultrasonic vibration applied thereto.
摘要翻译：半导体芯片设置有高频电路。多层布线部由有机材料构成，形成在半导体芯片上，多层配线部的最外层形成有凸块形成部。在凸点形成部分上形成凸块。多层布线部设置有加强装置，用于当高频电路装置以施加超声波振动的方式结合到基板上时，抑制凸块与凸点形成部之间的接合部的变形。

3. 发明授权

US07249957B2 Connector fixing structure 有权
标题翻译：连接器固定结构
公开(公告)号：US07249957B2
公开(公告)日：2007-07-31
申请号：US10968092
申请日：2004-10-20
申请人： Hiromichi Watanabe , Yoshifumi Fukatsu , Yasuo Nishioka
发明人： Hiromichi Watanabe , Yoshifumi Fukatsu , Yasuo Nishioka
IPC分类号： H01R12/00
CPC分类号： H01R12/585 , H01R12/7064
摘要： A connector fixing structure includes a substrate, a connector, and a housing. The substrate defines a first hole portion and a second hole portion. The connector includes a terminal of a pressfit shape that is inserted into the first holed portion to connect with the substrate electrically, and a housing having a leg portion of a press fit shape that is inserted into the second hole portion when the terminal is inserted into the first hole portion.
摘要翻译：连接器固定结构包括基板，连接器和壳体。基板限定第一孔部分和第二孔部分。连接器包括插入第一孔部分中以与电路连接的基座的端子，以及壳体，其具有当端子被插入时插入到第二孔部中的压配合形状的腿部第一孔部分。

4. 发明授权

US07062955B2 Combustion-pressure-data acquisition system of multi-cylinder engine 失效
标题翻译：多缸发动机燃烧压力数据采集系统
公开(公告)号：US07062955B2
公开(公告)日：2006-06-20
申请号：US11249110
申请日：2005-10-11
申请人： Hajime Kashiwase , Hiromichi Watanabe , Hiroshi Yokoyama
发明人： Hajime Kashiwase , Hiromichi Watanabe , Hiroshi Yokoyama
IPC分类号： G01M15/00
CPC分类号： G01L23/222 , F02D35/023 , F02D41/28 , F02D2041/281 , G01L9/085
摘要： A combustion-pressure-data acquisition system of a multi-cylinder engine according to the present invention includes an in-cylinder pressure sensor CPS#n for directly detecting combustion pressure in each cylinder; an amplifier unit AP#n to which the in-cylinder pressure sensor CPS#n for each cylinder is connected; and a channel switching unit MUX to which the amplifier unit AP#n for each cylinder is connected. It selects a system to be measured from among a plurality of systems of signals from the amplifier units AP#n with a channel selection signal outputted from an engine-controlling electronic control unit and outputs combustion pressure data to the ECU. Further, it outputs to an amplifier unit AP#n with which measurement ends a reset signal for discharging the electric charge between the in-cylinder pressure sensor CPS#n and the amplifier circuit to efficiently acquire combustion pressure data of each cylinder with a simple structure without complicated processing.
摘要翻译：根据本发明的多缸发动机的燃烧压力数据采集系统包括用于直接检测每个气缸中的燃烧压力的缸内压力传感器CPS＃n; 每个气缸的缸内压力传感器CPS＃n连接的放大器单元AP＃n; 以及连接有用于每个气缸的放大器单元AP＃n的通道切换单元MUX。从具有从发动机控制电子控制单元输出的通道选择信号的放大器单元AP＃n的多个信号系统中选择要测量的系统，并将燃料压力数据输出到ECU。此外，它输出到放大器单元AP＃n，测量结束用于在缸内压力传感器CPS＃n和放大器电路之间排放电荷的复位信号，以便以简单的结构有效地获取每个气缸的燃烧压力数据没有复杂的处理。

5. 发明授权

US4597826A Method for forming patterns 失效
标题翻译：形成图案的方法
公开(公告)号：US4597826A
公开(公告)日：1986-07-01
申请号：US686521
申请日：1984-12-26
申请人： Teiji Majima , Hiromichi Watanabe
发明人： Teiji Majima , Hiromichi Watanabe
IPC分类号： H01F41/34 , H01L21/033 , C23F1/02 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/0337 , H01F41/34 , H01L21/0332 , H01L21/0335 , H01L21/0338
摘要： A method is disclosed of forming a fine pattern on a substrate, in which an etching mask pattern is formed on a layer of material of a pattern to be formed, an overlying layer is deposited on the pattern material layer and the mask pattern, and thereafter, the overlying layer and the pattern material layer are etched by ion etching. This method makes it possible, due to the pattern-widening effect caused by the deposition of the overlying layer and by the use of ion etching, to form a pattern having a gap smaller than 0.5 .mu.m or a contiguous-disk pattern having a period of 2 .mu.m or less by photolithography having a 1 .mu.m resolution. It is also possible to form a pattern adapted to enable an easy planing process, by utilizing a difference in etching rates between the mask pattern and the overlying layer. An apparatus used for carrying out the pattern forming method comprises film layer forming means and ion etching means, whereby the overlying layer forming step and the ion etching step can be successively performed by using one and the same apparatus.
摘要翻译：公开了在基板上形成精细图案的方法，其中在要形成的图案的材料层上形成蚀刻掩模图案，在图案材料层和掩模图案上沉积上覆层，之后，通过离子蚀刻蚀刻上覆层和图案材料层。该方法可以由于由上覆层的沉积引起的图案加宽效应和通过使用离子蚀刻来形成间隙小于0.5μm的图案或具有间隔的连续盘图案为2μm或更小，通过具有1μm分辨率的光刻。也可以通过利用掩模图案和上覆层之间的蚀刻速率的差异来形成适于实现容易的刨削工艺的图案。用于进行图案形成方法的装置包括膜层形成装置和离子蚀刻装置，由此可以通过使用同一装置连续执行上覆层形成步骤和离子蚀刻步骤。

6. 发明授权

US07407325B2 Method and apparatus for measuring thermophysical properties 失效
标题翻译：用于测量热物理性质的方法和装置
公开(公告)号：US07407325B2
公开(公告)日：2008-08-05
申请号：US11214052
申请日：2005-08-30
申请人： Hiromichi Watanabe , Tetsuya Baba
发明人： Hiromichi Watanabe , Tetsuya Baba
IPC分类号： G01J5/00 , G01N25/20
CPC分类号： G01N25/18
摘要： The present invention provides a method for measuring thermophysical properties that includes: rapid resistive self-heating of a specimen by using a heating current; emitting a light to the specimen heated by the rapid resistive self-heating of the specimen; measuring a temperature change of the specimen induced by emitting the light to the specimen; and deriving a thermal diffusivity of the specimen from the temperature change induced by emitting the light to the specimen.
摘要翻译：本发明提供了一种用于测量热物理性质的方法，其包括：通过使用加热电流对试样进行快速电阻自加热; 通过样品的快速电阻自身加热的样品发光; 测量通过将光发射到样品而引起的样品的温度变化; 并从通过将光发射到样品而引起的温度变化导出样品的热扩散率。

7. 发明申请

US20050190539A1 Electronic control device 有权
标题翻译：电子控制装置
公开(公告)号：US20050190539A1
公开(公告)日：2005-09-01
申请号：US10788897
申请日：2004-02-27
申请人： Hiromichi Watanabe , Shinichi Sugiura , Takafumi Yasuhara , Katsufumi Morimune , Hideaki Kaino , Nobuhiro Wada , Masatsugu Oohara
发明人： Hiromichi Watanabe , Shinichi Sugiura , Takafumi Yasuhara , Katsufumi Morimune , Hideaki Kaino , Nobuhiro Wada , Masatsugu Oohara
IPC分类号： H05K1/14 , H05K3/00 , H05K3/34 , H05K5/00 , H05K7/20
CPC分类号： H05K7/20854 , H05K1/144 , H05K3/0058 , H05K3/3447
摘要： An electronic control device enabling heat generated by a power module to be favorably radiated even in a high-temperature condition in an engine compartment. The unit includes a casing accommodating a control circuit substrate; a die-cast mounting plate forming a control circuit substrate support portion, a frame-like fitting member and an external mounting portion integrally together; and a metal substrate on which a power module is adhered. When the mounting plate is mounted on the wall of a transmission and the metal substrate is fitted in the opening in the bottom surface of the frame-like fitting member, a mounting surface in nearly the same plane is formed by the lower surface of the mounting plate and by the lower surface of the metal substrate permitting heat from the power module to be radiated to the wall.
摘要翻译：即使在发动机室内的高温状态下，也能够使由功率模块产生的热量良好地照射的电子控制装置。该单元包括容纳控制电路基板的外壳; 形成控制电路基板支撑部的压铸安装板，整体地一体地形成框架状的嵌合部件和外部安装部; 以及附着有电源模块的金属基板。当安装板安装在变速器的壁上并且金属基底装配在框架状装配构件的底表面中的开口中时，几乎相同的平面中的安装表面由安装板的下表面形成板和金属基板的下表面，允许来自功率模块的热量辐射到壁上。

8. 发明授权

US06915780B2 Combustion pressure data collection system for multi-cylinder engine 有权
标题翻译：多气缸发动机燃烧压力数据采集系统
公开(公告)号：US06915780B2
公开(公告)日：2005-07-12
申请号：US10943570
申请日：2004-09-17
申请人： Hajime Kashiwase , Hiromichi Watanabe , Hiroshi Yokoyama
发明人： Hajime Kashiwase , Hiromichi Watanabe , Hiroshi Yokoyama
IPC分类号： G01L19/04 , F02D35/02 , F02D45/00 , G01L23/10 , G01M15/08 , F02D7/00
CPC分类号： G01L23/10 , F02D35/023 , F02D41/28 , F02D2041/281 , G01M15/08
摘要： A combustion pressure data collection system for a multi-cylinder engine includes a cylinder pressure sensor, an amplifier unit, and a channel switching unit. The cylinder pressure sensor directly detect a combustion pressure of respective cylinders, the amplifier unit converts a charge signal from the cylinder pressure sensor into voltage signal and have an automatic correction function for automatically correcting a voltage output level so that the level is setted to the same level before and after the cylinder pressure sensor generate a charge, and the amplifier unit of the respective cylinders is connected to the channel switching unit. A channel for actuating to be measured is selected from signals of a plurality of channels supplied from the amplifier units in response to a channel selection signal output from an electronic engine control unit, and combustion pressure data are outputted to the electronic engine control unit from the cylinder of the channel, thereby combustion pressure data can be effectively collected by a simple arrangement without complex processing.
摘要翻译：用于多缸发动机的燃烧压力数据收集系统包括气缸压力传感器，放大器单元和通道切换单元。气缸压力传感器直接检测各个气缸的燃烧压力，放大器单元将来自气缸压力传感器的充电信号转换为电压信号，并具有自动校正功能，用于自动校正电压输出电平，使电平设置为相同气缸压力传感器之前和之后的电平产生电荷，并且各个气缸的放大器单元连接到通道切换单元。响应于从电子发动机控制单元输出的通道选择信号，从放大器单元提供的多个通道的信号中选择待测量的通道，并且燃烧压力数据从电子发动机控制单元从通道的气缸，由此燃烧压力数据可以通过简单的布置有效地收集而不需要复杂的处理。

9. 发明申请

US20050130463A1 Pressfit terminal and connection structure 失效
标题翻译：压接端子和连接结构
公开(公告)号：US20050130463A1
公开(公告)日：2005-06-16
申请号：US10968066
申请日：2004-10-20
申请人： Hiromichi Watanabe , Yoshifumi Fukatsu , Yasuo Nishioka
发明人： Hiromichi Watanabe , Yoshifumi Fukatsu , Yasuo Nishioka
IPC分类号： H01R4/18 , H01R12/00 , H01R43/16 , H05K3/30
CPC分类号： H01R12/58 , H05K3/308 , H05K2201/0979 , H05K2201/1059 , H05K2201/10787
摘要： A pressfit terminal is to be inserted into a through hole defined in a substrate for electrically contacting with the through hole. The pressfit terminal includes a terminal main body and at least three protrusion portions. The at least three protrusion portions protrude outwardly from a surface of the terminal main body. At least part of the protrusion portions are arranged at intervals in a direction intersecting with an insertion direction of the terminal main body.
摘要翻译：压接端子被插入到限定在基板中的通孔中，以与通孔电接触。压配端子包括端子主体和至少三个突出部。所述至少三个突起部从所述端子主体的表面向外突出。突出部的至少一部分在与端子主体的插入方向相交的方向上间隔地配置。

10. 发明授权

US08420444B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08420444B2
公开(公告)日：2013-04-16
申请号：US13028419
申请日：2011-02-16
申请人： Motoaki Tani , Shinya Iijima , Shinichi Sugiura , Hiromichi Watanabe
发明人： Motoaki Tani , Shinya Iijima , Shinichi Sugiura , Hiromichi Watanabe
IPC分类号： H01L23/492 , H01L21/52 , H01L23/498
CPC分类号： H01L23/49811 , H01L21/563 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/81 , H01L2224/02166 , H01L2224/02311 , H01L2224/02313 , H01L2224/02331 , H01L2224/0239 , H01L2224/0345 , H01L2224/03912 , H01L2224/0401 , H01L2224/05009 , H01L2224/05024 , H01L2224/05166 , H01L2224/05567 , H01L2224/05644 , H01L2224/0603 , H01L2224/06102 , H01L2224/09103 , H01L2224/1134 , H01L2224/11462 , H01L2224/11472 , H01L2224/13014 , H01L2224/13021 , H01L2224/13023 , H01L2224/13024 , H01L2224/13144 , H01L2224/13147 , H01L2224/1403 , H01L2224/141 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2224/81203 , H01L2224/81205 , H01L2224/81444 , H01L2224/81801 , H01L2224/83104 , H01L2224/92 , H01L2224/92125 , H01L2224/94 , H01L2924/00014 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01061 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/14 , H01L2924/00 , H01L2924/00012 , H01L2224/80203 , H01L2224/11 , H01L21/78 , H01L2224/81 , H01L2924/01047 , H01L2224/05552
摘要： A semiconductor device includes a first bump that is located over a surface of a semiconductor element, and is formed on a first bump formation face distanced from a back surface of the semiconductor element at a first distance, and a second bump that is located over the surface of the semiconductor element, and is formed on a second bump formation face distanced from the back surface of the semiconductor element at a second distance being longer than the first distance, the second bump having a diameter larger than a diameter of the first bump.
摘要翻译：半导体器件包括位于半导体元件的表面上方的第一凸点，并且形成在距半导体元件的背面远离第一距离处的第一凸起形成面和位于半导体元件的上方的第二凸起并且形成在距离半导体元件的背面远离第二距离的第二凸起形成面上，第二距离比第一距离长，第二凸起的直径大于第一凸起的直径。

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