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1. 发明授权

US06704189B2 Electronic device with external terminals and method of production of the same 有权
标题翻译：具有外部端子的电子设备及其生产方法相同
公开(公告)号：US06704189B2
公开(公告)日：2004-03-09
申请号：US10404664
申请日：2003-04-02
申请人： Akitoshi Yoshii , Kazuhiko Kikuchi , Takashi Kamiya , Hiromi Kikuchi
发明人： Akitoshi Yoshii , Kazuhiko Kikuchi , Takashi Kamiya , Hiromi Kikuchi
IPC分类号： H01G4228
CPC分类号： H01G4/248 , H01C1/144 , H01C17/28 , H01G2/065 , H01G4/2325 , H05K3/3426
摘要： A multilayer ceramic capacitor with external terminals having terminal electrodes and external terminals of the electronic device body electrically bonded through a solder layer, wherein the solder layer is comprised of an Sn—Sb high temperature lead-free solder, the ratio between the Sn and Sb in this solder layer is, by ratio by weight percent, in a range of Sn/Sb=70/30 to 90/10, and the solder layer and terminal electrodes are formed between them with a diffusion layer formed by diffusion of a conductive ingredient of the terminal electrodes into the solder layer.
摘要翻译：具有端子电极的外部端子和电子器件主体的外部端子通过焊料层电连接的多层陶瓷电容器，其中焊料层由Sn-Sb高温无铅焊料构成，Sn与Sb之间的比例在该焊料层中，以Sn / Sb = 70/30〜90/10的范围内，以重量比计，焊料层和端子电极之间形成有通过导电成分的扩散形成的扩散层的端子电极进入焊料层。

2. 发明授权

US5008942A Diagnostic voice instructing apparatus 失效
标题翻译：诊断语音指导装置
公开(公告)号：US5008942A
公开(公告)日：1991-04-16
申请号：US277865
申请日：1988-11-30
申请人： Hiromi Kikuchi
发明人： Hiromi Kikuchi
IPC分类号： A61B6/00 , A61B6/03 , G06F3/16 , G10L13/00 , G10L13/06
CPC分类号： A61B6/00 , A61B6/468 , G10L13/06
摘要： A diagnostic voice instructing apparatus has a recording/playback device including a voice recording/playback LSI and a RAM, and converts an arbitrary instruction voice to a patient, which has been input through a microphone by a user for use in a scanning operation, into a digital signal and stores the signal in corresponding one of 15 channels of the RAM, the instructing voice may be input in an arbitrary language, dialect or expression. The recording/playback device is coupled to a scan controller, which controls the scanning operation of a CT apparatus, and a host controller, which sends commands to the recording/playback device and scan controller and receives control data from the scan controller. The host controller permits an operator to prepare ID data to each patient, which includes the name, and condition, of the patient, as well as designation of the necessary instructing voice to the patient in terms of a channel quantity. When the patient ID data is read out from the host controller and supplied to the recording/playback device, and when the CT apparatus starts scanning the patient in response to a command from the scan controller, an instructing voice is read out from the channel designated by the patient ID data at the proper timing in synchronism with the scanning operation and is supplied through an amplifier to a speaker for its reproduction.
摘要翻译：诊断语音指示装置具有包括语音记录/再现LSI和RAM的记录/重放装置，并且将用户经由麦克风输入的用于扫描操作的病人的任意指令语音转换为患者，数字信号并将信号存储在RAM的15个通道的相应的一个中，可以以任意语言，方言或表达形式输入指令语音。记录/重放装置耦合到控制CT装置的扫描操作的扫描控制器和向记录/重放装置和扫描控制器发送命令并从扫描控制器接收控制数据的主机控制器。主机控制器允许操作者准备每个患者的ID数据，包括患者的姓名和状况，以及根据信道数量向病人指定必要的指示语音。当从主机控制器读取患者ID数据并提供给记录/重放装置时，当CT装置响应于来自扫描控制器的命令开始扫描患者时，从指定的信道中读出指示语音通过与扫描操作同步的适当定时的患者ID数据，并通过放大器提供给扬声器以进行再现。

3. 发明授权

US07915533B2 Silicon nitride substrate, a manufacturing method of the silicon nitride substrate, a silicon nitride wiring board using the silicon nitride substrate, and semiconductor module 有权
标题翻译：氮化硅衬底，氮化硅衬底的制造方法，使用氮化硅衬底的氮化硅衬底板和半导体模块
公开(公告)号：US07915533B2
公开(公告)日：2011-03-29
申请号：US11911794
申请日：2006-04-14
申请人： Youichirou Kaga , Hiromi Kikuchi , Hisayuki Imamura , Junichi Watanabe
发明人： Youichirou Kaga , Hiromi Kikuchi , Hisayuki Imamura , Junichi Watanabe
IPC分类号： H01L29/00 , H01B3/12 , H05K7/06
CPC分类号： H01L23/3731 , C04B35/584 , C04B37/021 , C04B37/026 , C04B2235/3206 , C04B2235/3224 , C04B2235/3225 , C04B2235/3878 , C04B2235/3882 , C04B2235/3895 , C04B2235/5296 , C04B2235/5436 , C04B2235/5445 , C04B2235/656 , C04B2235/6562 , C04B2235/6567 , C04B2235/658 , C04B2235/725 , C04B2235/787 , C04B2235/85 , C04B2235/96 , C04B2235/9607 , C04B2237/122 , C04B2237/124 , C04B2237/125 , C04B2237/36 , C04B2237/402 , C04B2237/407 , C04B2237/60 , H01L23/15 , H01L23/49894 , H01L2924/0002 , H01L2924/13055 , H01L2924/13091 , H05K1/0306 , H05K3/0061 , H05K2201/0355 , H01L2924/00
摘要： In the silicon nitride substrate concerning an embodiment of the invention, degree of in-plane orientation fa of β type silicon nitride is 0.4-0.8. Here, degree of in-plane orientation fa can be determined by the rate of the diffracted X-ray intensity in each lattice plane orientation in β type silicon nitride. As a result of research by the inventors, it turned out that both high fracture toughness and high thermal conductivity are acquired, when degree of in-plane orientation fa was 0.4-0.8. Along the thickness direction, both the fracture toughness of 6.0 MPa·m1/2 or higher and the thermal conductivity of 90 W/m·K or higher can be attained.
摘要翻译：在涉及本发明的一个实施方式的氮化硅衬底中，面的取向度为＆bgr; 氮化硅为0.4-0.8。这里，面内取向fa的度可以通过＆bgr中的每个晶格面取向中的衍射X射线强度的速率来确定。型氮化硅。本发明人的研究结果表明，当面内取向度fa为0.4-0.8时，获得了高断裂韧性和高热导率。沿厚度方向，可以获得6.0MPa·m1 / 2以上的断裂韧性和90W / m·K以上的导热率。

4. 发明授权

US07304831B2 Ceramic electronic component and multilayer capacitor 有权
标题翻译：陶瓷电子元器件和多层电容器
公开(公告)号：US07304831B2
公开(公告)日：2007-12-04
申请号：US11347296
申请日：2006-02-06
申请人： Akitoshi Yoshii , Taisuke Ahiko , Atsushi Takeda , Shirou Ootsuki , Shinya Onodera , Miki Kimura , Hiromi Kikuchi
发明人： Akitoshi Yoshii , Taisuke Ahiko , Atsushi Takeda , Shirou Ootsuki , Shinya Onodera , Miki Kimura , Hiromi Kikuchi
IPC分类号： H01G4/06
CPC分类号： H01G4/2325
摘要： A multilayer capacitor comprises a ceramic sintered body, an internal electrode disposed in the ceramic sintered body, and an external electrode disposed on an external surface of the ceramic sintered body. The external electrode has a first electrode layer formed on the external surface of the ceramic sintered body, a second electrode layer formed on the first electrode layer, and a conductive resin layer formed on the second electrode layer. The internal electrode and the first electrode layer consist primarily of a base metal. The second electrode layer consists primarily of a noble metal or a noble metal alloy. The conductive resin layer contains a noble metal or a noble metal alloy as a conductive material.
摘要翻译：多层电容器包括陶瓷烧结体，设置在陶瓷烧结体中的内部电极和设置在陶瓷烧结体的外表面上的外部电极。外部电极具有形成在陶瓷烧结体的外表面上的第一电极层，形成在第一电极层上的第二电极层和形成在第二电极层上的导电树脂层。内部电极和第一电极层主要由贱金属组成。第二电极层主要由贵金属或贵金属合金构成。导电性树脂层含有作为导电材料的贵金属或贵金属合金。

5. 发明申请

US20090039477A1 SILICON NITRIDE SUBSTRATE, A MANUFACTURING METHOD OF THE SILICON NITRIDE SUBSTRATE, A SILICON NITRIDE WIRING BOARD USING THE SILICON NITRIDE SUBSTRATE, AND SEMICONDUCTOR MODULE 有权
标题翻译：硅氮化物衬底，氮化硅衬底的制造方法，使用氮化硅衬底的氮化硅接线板和半导体模块
公开(公告)号：US20090039477A1
公开(公告)日：2009-02-12
申请号：US11911794
申请日：2006-04-14
申请人： Youichirou Kaga , Hiromi Kikuchi , Hisayuki Imamura , Junichi Watanabe
发明人： Youichirou Kaga , Hiromi Kikuchi , Hisayuki Imamura , Junichi Watanabe
IPC分类号： H01L29/00 , B23K35/24
CPC分类号： H01L23/3731 , C04B35/584 , C04B37/021 , C04B37/026 , C04B2235/3206 , C04B2235/3224 , C04B2235/3225 , C04B2235/3878 , C04B2235/3882 , C04B2235/3895 , C04B2235/5296 , C04B2235/5436 , C04B2235/5445 , C04B2235/656 , C04B2235/6562 , C04B2235/6567 , C04B2235/658 , C04B2235/725 , C04B2235/787 , C04B2235/85 , C04B2235/96 , C04B2235/9607 , C04B2237/122 , C04B2237/124 , C04B2237/125 , C04B2237/36 , C04B2237/402 , C04B2237/407 , C04B2237/60 , H01L23/15 , H01L23/49894 , H01L2924/0002 , H01L2924/13055 , H01L2924/13091 , H05K1/0306 , H05K3/0061 , H05K2201/0355 , H01L2924/00
摘要： In the silicon nitride substrate concerning an embodiment of the invention, degree of in-plane orientation fa of β type silicon nitride is 0.4-0.8. Here, degree of in-plane orientation fa can be determined by the rate of the diffracted X-ray intensity in each lattice plane orientation in β type silicon nitride. As a result of research by the inventors, it turned out that both high fracture toughness and high thermal conductivity are acquired, when degree of in-plane orientation fa was 0.4-0.8. Along the thickness direction, both the fracture toughness of 6.0 MPa·m1/2 or higher and the thermal conductivity of 90 W/m·K or higher can be attained.
摘要翻译：在涉及本发明的实施方案的氮化硅衬底中，β型氮化硅的面内取向度fa为0.4-0.8。这里，面内取向fa的度可以通过β型氮化硅中的每个晶格面取向中的衍射X射线强度的速度来确定。本发明人的研究结果表明，当面内取向度fa为0.4-0.8时，获得了高断裂韧性和高热导率。沿厚度方向，可以获得6.0MPa.m1 / 2以上的断裂韧性和90W / m·K以上的导热率。

6. 发明授权

US5435826A Sputtering target and method for producing same 失效
标题翻译：溅射靶材及其制造方法
公开(公告)号：US5435826A
公开(公告)日：1995-07-25
申请号：US155813
申请日：1993-11-23
申请人： Masahiko Sakakibara , Hiromi kikuchi
发明人： Masahiko Sakakibara , Hiromi kikuchi
IPC分类号： C04B35/01 , C23C14/08 , C23C14/34 , C22C29/12
CPC分类号： C04B35/01 , C23C14/086 , C23C14/3414
摘要： A sputtering target having a relative density of 90% or more and a single-phase structure for forming a indium-tin oxide layer of low resistance is produced by pressing a composite powder of indium oxide and tin oxide having an average diameter of 0.1 .mu.m or less and a tin content controlled to 1.5-6 weight %; and sintering the pressed composite powder at 1500.degree.-1700.degree. C. in an oxygen atmosphere pressurized at 1-10 atm.
摘要翻译：通过压制平均直径为0.1μm的氧化铟和氧化锡的复合粉末，制造相对密度为90％以上的溅射靶和形成低电阻的氧化铟锡层的单相结构体锡含量控制在1.5-6重量％以下。并在压力为1500〜1700℃的压缩复合粉末中，在1-10atm加压的氧气氛中烧结。

7. 发明申请

US20060187613A1 Ceramic electronic component and multilayer capacitor 有权
标题翻译：陶瓷电子元器件和多层电容器
公开(公告)号：US20060187613A1
公开(公告)日：2006-08-24
申请号：US11347296
申请日：2006-02-06
申请人： Akitoshi Yoshii , Taisuke Ahiko , Atsushi Takeda , Shirou Ootsuki , Shinya Onodera , Miki Kimura , Hiromi Kikuchi
发明人： Akitoshi Yoshii , Taisuke Ahiko , Atsushi Takeda , Shirou Ootsuki , Shinya Onodera , Miki Kimura , Hiromi Kikuchi
IPC分类号： H01G4/06
CPC分类号： H01G4/2325
摘要： A multilayer capacitor comprises a ceramic sintered body, an internal electrode disposed in the ceramic sintered body, and an external electrode disposed on an external surface of the ceramic sintered body. The external electrode has a first electrode layer formed on the external surface of the ceramic sintered body, a second electrode layer formed on the first electrode layer, and a conductive resin layer formed on the second electrode layer. The internal electrode and the first electrode layer consist primarily of a base metal. The second electrode layer consists primarily of a noble metal or a noble metal alloy. The conductive resin layer contains a noble metal or a noble metal alloy as a conductive material.
摘要翻译：多层电容器包括陶瓷烧结体，设置在陶瓷烧结体中的内部电极和设置在陶瓷烧结体的外表面上的外部电极。外部电极具有形成在陶瓷烧结体的外表面上的第一电极层，形成在第一电极层上的第二电极层和形成在第二电极层上的导电树脂层。内部电极和第一电极层主要由贱金属组成。第二电极层主要由贵金属或贵金属合金构成。导电性树脂层含有作为导电材料的贵金属或贵金属合金。

8. 发明授权

US06221271B1 Piezoelectric sintered ceramics and piezoelectric ceramic elements constituted thereby 失效
标题翻译：由此构成的压电陶瓷和压电陶瓷元件
公开(公告)号：US06221271B1
公开(公告)日：2001-04-24
申请号：US09273494
申请日：1999-03-22
申请人： Junichi Watanabe , Hiromi Kikuchi , Hideko Fukushima , Shigeru Jomura
发明人： Junichi Watanabe , Hiromi Kikuchi , Hideko Fukushima , Shigeru Jomura
IPC分类号： H01L41187
CPC分类号： H01L41/107 , H01L41/187
摘要： A piezoelectric sintered ceramic made of (a) 100 parts by weight of main components having a composition represented by the general formula: (Pb1−yMy)(ZrzTi1−z)O3, wherein M is at least one element selected from the group consisting of Sr, Ba and Ca, and y and z are numbers satisfying 0.01≦y≦0.10, and 0.51≦z≦0.56, respectively; (b) 0.05-1.0 parts by weight, as Fe2O3, of Fe; and (c) 10-1000 ppm of Ag.
摘要翻译：一种压电烧结陶瓷，其由（a）100重量份具有由通式（Pb1-yMy）（ZrzTi1-z）O3表示的组成的主要成分组成的组合物，其中M为选自以下的至少一种元素： Sr，Ba和Ca，y和z分别满足0.01 <= y <= 0.10，和0.51 <= z <= 0.56的数字; （b）0.05-1.0重量份的Fe 2 O 3，Fe; 和（c）10-1000ppm的Ag。

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