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1. 发明授权

US06920167B2 Semiconductor laser device and method for fabricating thereof 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US06920167B2
公开(公告)日：2005-07-19
申请号：US10665657
申请日：2003-09-18
申请人： Nozomu Hoshi , Hiroki Nagasaki
发明人： Nozomu Hoshi , Hiroki Nagasaki
IPC分类号： H01S5/00 , H01S5/22 , H01S5/223 , H01S5/227
CPC分类号： H01S5/2231 , H01S5/2205
摘要： A semiconductor laser device has on a compound semiconductor substrate at least a lower cladding layer, an active layer, an upper cladding layer and a contact layer. An upper part of the upper cladding layer and the contact layer are formed as a mesa-structured portion having a ridge stripe pattern, and the both sides of the mesa structured portion are buried with a current blocking layer. The laser device includes the current blocking layer having a pit-like recess penetrating thereof and extending towards the compound semiconductor substrate, and a portion of the recess other than that penetrating the current blocking layer being covered or buried with an insulating film or a compound semiconductor layer with a high resistivity. The compound semiconductor substrate and the electrode layer thus can be kept insulated in an area other than a current injection area, thereby non-emissive failure due to short-circuit is prevented.
摘要翻译：半导体激光装置在化合物半导体基板上至少具有下包层，有源层，上包覆层和接触层。上包层和接触层的上部形成为具有脊状条纹图案的台面结构部分，并且台面结构部分的两侧用电流阻挡层掩埋。激光装置包括电流阻挡层，其具有穿透其并且朝向化合物半导体衬底延伸的凹坑状凹部，并且除了穿透电流阻挡层之外的凹部的一部分被绝缘膜或化合物半导体覆盖或掩埋具有高电阻率的层。因此，化合物半导体衬底和电极层可以在除电流注入区域之外的区域中保持绝缘，由此防止由于短路而导致的非发射性故障。

2. 发明授权

US07719040B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US07719040B2
公开(公告)日：2010-05-18
申请号：US11997673
申请日：2006-07-27
申请人： Hiroki Nagasaki , Shouzi Tanaka
发明人： Hiroki Nagasaki , Shouzi Tanaka
IPC分类号： H01L31/112
CPC分类号： H01L27/14603 , H01L27/14605 , H01L27/14609 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/1463 , H01L27/14641 , H01L27/14643 , H01L27/14689 , H01L31/035281 , H04N5/335 , H04N5/374
摘要： Realized is a solid-state imaging device capable of achieving both a finer pixel size and high light receiving efficiency with an excellent image characteristic. A high concentration p-well layer (5) is partially formed in the interior of a semiconductor substrate (1) centering on a region under a STI (6), and a photoelectric conversion layer (9a, 9b) is formed so as to extend to a region under a gate electrode (10a, 10b). Furthermore, a salicide region (12a, 12b) covers only a portion of a surface of the gate electrode (10a, 10b) and is formed at a position closer to a side at which a drain region (13) is provided. Thus, an incident light is allowed to pass through a portion, included in the surface of the gate electrode (10a, 10b), on which the salicide region (12a, 12b) is not formed, and then to be further incident on the photoelectric conversion layer (9a, 9b) extending to the region under the gate electrode (10a, 10b).
摘要翻译：实现了能够以优异的图像特性实现更精细的像素尺寸和高的光接收效率的固态成像装置。在以STI（6）为中心的区域的半导体衬底（1）的内部部分地形成高浓度p阱层（5），并且形成光电转换层（9a，9b）以延伸到达栅电极（10a，10b）的区域。此外，自对准区域（12a，12b）仅覆盖栅电极（10a，10b）的一部分表面，并且形成在更靠近设置有漏极区域（13）的一侧的位置。因此，允许入射光通过包括在未形成自对准硅化物区域（12a，12b）的栅电极（10a，10b）的表面中的部分，然后进一步入射到光电转换层（9a，9b）延伸到栅电极（10a，10b）下方的区域。

3. 发明申请

US20090045407A1 SOLID-STATE IMAGING DEVICE 有权
标题翻译：固态成像装置
公开(公告)号：US20090045407A1
公开(公告)日：2009-02-19
申请号：US11997673
申请日：2006-07-27
申请人： Hiroki Nagasaki , Shouzi Tanaka
发明人： Hiroki Nagasaki , Shouzi Tanaka
IPC分类号： H01L31/112
CPC分类号： H01L27/14603 , H01L27/14605 , H01L27/14609 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/1463 , H01L27/14641 , H01L27/14643 , H01L27/14689 , H01L31/035281 , H04N5/335 , H04N5/374
摘要： Realized is a solid-state imaging device capable of achieving both a finer pixel size and high light receiving efficiency with an excellent image characteristic. A high concentration p-well layer (5) is partially formed in the interior of a semiconductor substrate (1) centering on a region under a STI (6), and a photoelectric conversion layer (9a, 9b) is formed so as to extend to a region under a gate electrode (10a, 10b). Furthermore, a salicide region (12a, 12b) covers only a portion of a surface of the gate electrode (10a, 10b) and is formed at a position closer to a side at which a drain region (13) is provided. Thus, an incident light is allowed to pass through a portion, included in the surface of the gate electrode (10a, 10b), on which the salicide region (12a, 12b) is not formed, and then to be further incident on the photoelectric conversion layer (9a, 9b) extending to the region under the gate electrode (10a, 10b).
摘要翻译：实现了能够以优异的图像特性实现更精细的像素尺寸和高的光接收效率的固态成像装置。在以STI（6）为中心的区域的半导体衬底（1）的内部部分地形成高浓度p阱层（5），并且形成光电转换层（9a，9b）以延伸到达栅电极（10a，10b）的区域。此外，自对准区域（12a，12b）仅覆盖栅电极（10a，10b）的一部分表面，并且形成在更靠近设置有漏极区域（13）的一侧的位置。因此，允许入射光通过包括在未形成自对准硅化物区域（12a，12b）的栅电极（10a，10b）的表面中的部分，然后进一步入射到光电转换层（9a，9b）延伸到栅电极（10a，10b）下方的区域。

4. 发明授权

US06654396B1 Semiconductor laser device and method for fabricating thereof 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US06654396B1
公开(公告)日：2003-11-25
申请号：US09580961
申请日：2000-05-30
申请人： Nozomu Hoshi , Hiroki Nagasaki
发明人： Nozomu Hoshi , Hiroki Nagasaki
IPC分类号： H01S500
CPC分类号： H01S5/2231 , H01S5/2205
摘要： A semiconductor laser device has on a compound semiconductor substrate at least a lower cladding layer, an active layer, an upper cladding layer and a contact layer. An upper part of the upper cladding layer and the contact layer are formed as a mesa-structured portion having a ridge stripe pattern, and both sides of the mesa structured portion are buried with a current blocking layer. The laser device includes the current blocking layer having a pit-like recess penetrating thereof and extending towards the compound semiconductor substrate, and a portion of the recess other than that penetrating the current blocking layer being covered or buried with an insulating film or a compound semiconductor layer with a high resistivity. The compound semiconductor substrate and the electrode layer thus can be kept insulated in an area other than a current injection area, thereby non-emissive failure due to short-circuit is prevented.
摘要翻译：半导体激光装置在化合物半导体基板上至少具有下包层，有源层，上包覆层和接触层。上覆层和接触层的上部形成为具有脊条纹图案的台面结构部分，并且台面结构部分的两侧用电流阻挡层掩埋。激光装置包括电流阻挡层，其具有穿透其并且朝向化合物半导体衬底延伸的凹坑状凹部，并且除了穿透电流阻挡层之外的凹部的一部分被绝缘膜或化合物半导体覆盖或掩埋具有高电阻率的层。因此，化合物半导体衬底和电极层可以在除电流注入区域之外的区域中保持绝缘，由此防止由于短路而导致的非发射性故障。

5. 发明授权

US07317218B2 Solid-state imaging device having a punch-through stopper region positioned closer to a signal accumulation region than is an end of the drain region 有权
标题翻译：具有比漏极区域的端部更靠近信号聚集区域的穿通停止区域的固态成像装置
公开(公告)号：US07317218B2
公开(公告)日：2008-01-08
申请号：US11263973
申请日：2005-11-02
申请人： Syouji Tanaka , Ryohei Miyagawa , Kazunari Koga , Tatsuya Hirata , Hiroki Nagasaki
发明人： Syouji Tanaka , Ryohei Miyagawa , Kazunari Koga , Tatsuya Hirata , Hiroki Nagasaki
IPC分类号： H01L31/062
CPC分类号： H01L27/14643 , H01L27/14632 , H01L27/14687 , H01L27/14689 , H01L31/035236
摘要： A solid-state imaging device can increase the amount of signal charge accumulation in a photodiode. The solid-state imaging device includes a gate electrode formed on a p-type semiconductor substrate. An n-type signal accumulation region accumulates the signal charge obtained through a photo-electrical conversion, and is formed in the semiconductor substrate so that a portion of the signal accumulation region is positioned below the gate electrode. An n-type drain region is positioned in the semiconductor substrate so that the n-type drain region is positioned opposite the signal accumulation region across the gate electrode. A p-type punch-through stopper region has a higher impurity concentration than the semiconductor substrate, and is formed in the semiconductor substrate so that the p-type punch-through region is positioned below the drain region, wherein an end of the punch-through stopper region is positioned closer to the signal accumulation region than the end of the drain region.
摘要翻译：固态成像装置可以增加光电二极管中的信号电荷积累量。固态成像器件包括形成在p型半导体衬底上的栅电极。 n型信号累积区域累积通过光电转换获得的信号电荷，并且形成在半导体衬底中，使得信号聚集区域的一部分位于栅电极下方。 n型漏极区域位于半导体衬底中，使得n型漏极区域与栅电极两端的信号聚集区域相对。 p型穿通停止区域具有比半导体衬底更高的杂质浓度，并且形成在半导体衬底中，使得p型穿通区域位于漏极区域下方，其中，通过停止区域比漏极区域的端部更靠近信号聚集区域。

6. 发明申请

US20070221973A1 SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20070221973A1
公开(公告)日：2007-09-27
申请号：US11688536
申请日：2007-03-20
申请人： Hiroki Nagasaki , Shouzi Tanaka , Motonari Katsuno
发明人： Hiroki Nagasaki , Shouzi Tanaka , Motonari Katsuno
IPC分类号： H01L31/113 , H01L31/062
CPC分类号： H01L27/14689 , H01L27/1463
摘要： A solid-state imaging device includes: a plurality of photodiodes arranged in a matrix on a semiconductor substrate 1 for storing a signal charge converted from incident light; MOS transistors for reading the signal charge stored in the photodiode, an element isolation region for isolating the photodiode from the MOS transistors, an implanted isolation layer formed below the element isolation region, and an impurity region surrounding the photodiode, the sides and bottom of the element isolation region and the implanted isolation layer. The implanted isolation layer covers the sides and bottom of the element isolation region. The solid-state imaging device can efficiently suppress the sensitivity degradation caused by the outflow of electric charge.
摘要翻译：固态成像装置包括：在半导体衬底1上以矩阵形式布置的多个光电二极管，用于存储从入射光转换的信号电荷; 用于读取存储在光电二极管中的信号电荷的MOS晶体管，用于将光电二极管与MOS晶体管隔离的元件隔离区，在元件隔离区下方形成的注入隔离层，以及围绕光电二极管的侧面和底部元件隔离区域和植入隔离层。植入的隔离层覆盖元件隔离区域的侧面和底部。固态成像装置可以有效地抑制由电荷流出引起的灵敏度劣化。

7. 发明授权

US07157754B2 Solid-state imaging device and interline transfer CCD image sensor 有权
标题翻译：固态成像装置和行间传输CCD图像传感器
公开(公告)号：US07157754B2
公开(公告)日：2007-01-02
申请号：US10742419
申请日：2003-12-19
申请人： Hiroki Nagasaki , Syouji Tanaka , Yoshiyuki Matsunaga
发明人： Hiroki Nagasaki , Syouji Tanaka , Yoshiyuki Matsunaga
IPC分类号： H01L27/148
CPC分类号： H01L27/14609 , H01L21/76237 , H01L27/1463 , H01L27/14643 , H01L27/14806 , H01L27/14843
摘要： A high-performance solid-state imaging device is provided. The solid-state imaging device includes: a plurality of pixel cells; and a driving unit. Each of the plurality of pixel cells includes: a photodiode that converts incident light into a signal charge and stores the signal charge; a MOS transistor that is provided for reading out the signal charge stored in the photodiode; an element isolation portion that is formed of a STI that is a grooved portion of the semiconductor substrate so that the photodiode and the MOS transistor are isolated from each other; and a deep-portion isolation implantation layer that is formed under the element isolation portion for preventing a flow of a charge from the photodiode to the MOS transistor.
摘要翻译：提供了一种高性能固态成像装置。固态成像装置包括：多个像素单元; 和驱动单元。多个像素单元中的每一个包括：将入射光转换为信号电荷并存储信号电荷的光电二极管; 提供用于读出存储在光电二极管中的信号电荷的MOS晶体管; 元件隔离部分，其由作为半导体衬底的沟槽部分的STI形成，使得光电二极管和MOS晶体管彼此隔离; 以及形成在元件隔离部分下方的用于防止电荷从光电二极管流到MOS晶体管的深部分隔离注入层。

8. 发明申请

US20060157756A1 Solid-state imaging device and manufacturing method thereof 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20060157756A1
公开(公告)日：2006-07-20
申请号：US11263973
申请日：2005-11-02
申请人： Syouji Tanaka , Ryohei Miyagawa , Kazunari Koga , Tatsuya Hirata , Hiroki Nagasaki
发明人： Syouji Tanaka , Ryohei Miyagawa , Kazunari Koga , Tatsuya Hirata , Hiroki Nagasaki
IPC分类号： H01L31/113 , H01L21/00
CPC分类号： H01L27/14643 , H01L27/14632 , H01L27/14687 , H01L27/14689 , H01L31/035236
摘要： An object of the present invention is to provide a solid-state imaging device which can increase the amount of signal charge accumulation in a photodiode, and a manufacturing method thereof. The solid-state imaging device according to the present invention includes: a gate electrode formed on a p-type semiconductor substrate; an n-type signal accumulation region which accumulates the signal charge obtained through a photo-electrical conversion, and is formed in the semiconductor substrate so that a portion of the signal accumulation region is positioned below the gate electrode; an n-type drain region which is positioned in the semiconductor substrate so that the n-type drain region is positioned opposite the signal accumulation region across the gate electrode; and a p-type punch-through stopper region which has a higher impurity concentration than the semiconductor substrate, and is formed in the semiconductor substrate so that the p-type punch-through region is positioned below the drain region, wherein an end of the punch-through stopper region is positioned closer to the signal accumulation region than the end of the drain region.
摘要翻译：本发明的目的是提供一种能够增加光电二极管中的信号电荷积聚量的固态成像装置及其制造方法。根据本发明的固态成像装置包括：形成在p型半导体衬底上的栅电极; 累积通过光电转换获得的信号电荷的n型信号存储区域，并形成在半导体衬底中，使得信号存储区域的一部分位于栅电极下方; 位于所述半导体衬底中的n型漏极区，使得所述n型漏极区域与所述栅电极相交的所述信号聚集区域相对; 以及具有比半导体衬底更高的杂质浓度的p型穿通止挡区域，并且形成在半导体衬底中，使得p型穿通区域位于漏极区域的下方，其中，穿通停止区域比漏极区域的端部更靠近信号聚集区域。

9. 发明申请

US20060076582A1 Solid-state imaging device, method for manufacturing the same and interline transfer CCD image sensor 有权
标题翻译：固态成像装置及其制造方法和行间传输CCD图像传感器
公开(公告)号：US20060076582A1
公开(公告)日：2006-04-13
申请号：US11292835
申请日：2005-12-02
申请人： Hiroki Nagasaki , Syouji Tanaka , Yoshiyuki Matsunaga
发明人： Hiroki Nagasaki , Syouji Tanaka , Yoshiyuki Matsunaga
IPC分类号： H01L29/768
CPC分类号： H01L27/14609 , H01L21/76237 , H01L27/1463 , H01L27/14643 , H01L27/14806 , H01L27/14843
摘要： A high-performance solid-state imaging device is provided. The solid-state imaging device includes: a plurality of pixel cells; and a driving unit. Each of the plurality of pixel cells includes: a photodiode that converts incident light into a signal charge and stores the signal charge; a MOS transistor that is provided for reading out the signal charge stored in the photodiode; an element isolation portion that is formed of a STI that is a grooved portion of the semiconductor substrate so that the photodiode and the MOS transistor are isolated from each other; and a deep-portion isolation implantation layer that is formed under the element isolation portion for preventing a flow of a charge from the photodiode to the MOS transistor.
摘要翻译：提供了一种高性能固态成像装置。固态成像装置包括：多个像素单元; 和驱动单元。多个像素单元中的每一个包括：将入射光转换为信号电荷并存储信号电荷的光电二极管; 提供用于读出存储在光电二极管中的信号电荷的MOS晶体管; 元件隔离部分，其由作为半导体衬底的沟槽部分的STI形成，使得光电二极管和MOS晶体管彼此隔离; 以及形成在元件隔离部分下方的用于防止电荷从光电二极管流向MOS晶体管的深部隔离注入层。

10. 发明授权

US06647045B2 Semiconductor laser device and method of manufacturing the same 失效
公开(公告)号：US06647045B2
公开(公告)日：2003-11-11
申请号：US09950786
申请日：2001-09-13
申请人： Koji Iwamoto , Hiroki Nagasaki
发明人： Koji Iwamoto , Hiroki Nagasaki
IPC分类号： H01S319
CPC分类号： H01S5/22 , H01S5/0282 , H01S2301/176 , H01S2304/04
摘要： There is provided a long-life and highly reliable air ridge type semiconductor laser device having a multi-layer structure including a first cladding layer of n-Al0.7GaInP, an active layer of AlGaAs, a second cladding layer of p-Al0.7GaInP and a contact (capping) layer of p-GaAs epitaxially grown in this sequential order on a substrate of n-GaAs, in which the contact layer and an upper portion of the second cladding layer is etched to be a ridge stripe, and the second cladding layer comprises an upper layer, which constitutes the ridge stripe together with the contact layer, and a lower layer having a thickness of 0.3 &mgr;m, which is positioned below the upper layer and extend outwardly from the both lower ends of the upper layer, and further, the semiconductor laser device includes a protection layer being an epitaxially grown n-GaAs layer having a film thickness of 0.15 &mgr;m provided on an upper surface of the lower layer of the second cladding layer and side planes of the ridge stripe other than an upper surface thereof.

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