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1. 发明申请

US20060057858A1 Method for oxidation of a layer and corresponding holder device for a substrate 有权
标题翻译：用于氧化层的方法和用于基材的相应的保持器装置
公开(公告)号：US20060057858A1
公开(公告)日：2006-03-16
申请号：US10522505
申请日：2003-07-26
申请人： Hin-Yiu Chung , Thomas Gutt
发明人： Hin-Yiu Chung , Thomas Gutt
IPC分类号： H01L21/469
CPC分类号： H01L21/3247 , H01L21/02178 , H01L21/02233 , H01L21/02255 , H01L21/31666 , H01L21/3228 , H01L21/67115 , H01L21/68735 , H01S5/18311 , Y10S438/94
摘要： A method is presented in which a layer which is to be oxidized is processed, in a single-substrate process. The process temperature during the processing is recorded directly at the substrate or at a holding device for the substrate. The method includes introducing a substrate, which bears a layer to be oxidized uncovered in an edge region in a layer stack, into a heating device, passing an oxidation gas onto the substrate, heating the substrate to a process temperature, which is recorded during the processing via a temperature of a holding device which holds the substrate, and controlling the substrate temperature to a desired temperature or temperature curve during the processing.
摘要翻译：提出了一种方法，其中在单衬底工艺中处理待氧化的层。处理期间的处理温度直接记录在基板或基板的保持装置上。该方法包括将在衬层的边缘区域中未被覆盖的待氧化层的衬底引入加热装置中，将氧化气体通入衬底，将衬底加热到处理温度通过保持基板的保持装置的温度进行处理，并且在处理期间将基板温度控制到期望的温度或温度曲线。

2. 发明授权

US08011319B2 Method for oxidizing a layer, and associated holding devices for a substrate 有权
标题翻译：用于氧化层的方法以及用于衬底的相关保持装置
公开(公告)号：US08011319B2
公开(公告)日：2011-09-06
申请号：US12573394
申请日：2009-10-05
申请人： Hin-Yiu Chung , Thomas Gutt
发明人： Hin-Yiu Chung , Thomas Gutt
IPC分类号： B05C11/00
CPC分类号： H01L21/3247 , H01L21/02178 , H01L21/02233 , H01L21/02255 , H01L21/31666 , H01L21/3228 , H01L21/67115 , H01L21/68735 , H01S5/18311 , Y10S438/94
摘要： A holding device is presented in which a layer which is to be oxidized is processed, in a single-substrate process. The process temperature during the processing is recorded directly at the substrate or at a holding device for the substrate. The process includes introducing a substrate, which bears a layer to be oxidized uncovered in an edge region in a layer stack, into a heating device, passing an oxidation gas onto the substrate, heating the substrate to a process temperature, which is recorded during the processing via a temperature of the holding device which holds the substrate, and controlling the substrate temperature to a desired temperature or temperature curve during the processing.
摘要翻译：提出了一种保持装置，其中在单衬底工艺中处理待氧化的层。处理期间的处理温度直接记录在基板或基板的保持装置上。该方法包括将在衬层的边缘区域中被覆盖的未被覆盖的层的衬底引入到加热装置中，将氧化气体传递到衬底上，将衬底加热到处理温度，该过程温度在通过保持基板的保持装置的温度进行处理，并且在处理期间将基板温度控制到期望的温度或温度曲线。

3. 发明授权

US07144747B2 Method for thermally treating a substrate that comprises several layers 有权
标题翻译：用于热处理包含数层的衬底的方法
公开(公告)号：US07144747B2
公开(公告)日：2006-12-05
申请号：US10487573
申请日：2002-07-26
申请人： Hin Yiu Chung , Georg Roters
发明人： Hin Yiu Chung , Georg Roters
IPC分类号： H01L21/00
CPC分类号： H01S5/18352 , H01L21/31683 , H01S5/18311
摘要： A method of thermally treating a substrate that has multiple layers is provided. A substrate layer that is covered on opposite sides is oxidized from side edges thereof toward a center thereof such that, via the following steps, a defined central portion is not oxidized. The substrate is heated in a process chamber to a prescribed treatment temperature. A hydrogen-rich water vapor is introduced into the process chamber for a specified period of time, wherein such introduction is effected prior to, during and/or after the step of heating the substrate to the prescribed temperature. After conclusion of the specified period of time, introduced into the process chamber is one of the group consisting of: dry oxygen, namely pure oxygen in the form of at least one of atomic O, molecular O2 and O3; a mixture of oxygen and an inert gas that does not chemically react with the layers of the substrate; an oxygen-containing compound that contains no water; and an oxygen-rich water vapor.
摘要翻译：提供了一种热处理具有多层的衬底的方法。被覆在相对侧的基底层从其侧边缘朝向其中心被氧化，使得经由以下步骤，限定的中心部分不被氧化。将衬底在处理室中加热到规定的处理温度。将富氢水蒸气引入处理室一段特定的时间，其中这种引入是在将基片加热至规定温度之前，期间和/或之后进行的。在规定的时间段内结束后，引入处理室是由以下组成的组之一：干氧，即原子O，分子O 2 2中至少一个的形式的纯氧和 O 3; 氧和惰性气体的混合物，其不与衬底的层发生化学反应; 不含水的含氧化合物; 和富氧水蒸汽。

4. 发明申请

US20100018462A1 METHOD FOR OXIDIZING A LAYER, AND ASSOCIATED HOLDING DEVICES FOR A SUBSTRATE 有权
标题翻译：用于氧化层的方法以及用于衬底的相关保持装置
公开(公告)号：US20100018462A1
公开(公告)日：2010-01-28
申请号：US12573394
申请日：2009-10-05
申请人： Hin-Yiu Chung , Thomas Gutt
发明人： Hin-Yiu Chung , Thomas Gutt
IPC分类号： B05C11/00
CPC分类号： H01L21/3247 , H01L21/02178 , H01L21/02233 , H01L21/02255 , H01L21/31666 , H01L21/3228 , H01L21/67115 , H01L21/68735 , H01S5/18311 , Y10S438/94
摘要： A holding device is presented in which a layer which is to be oxidized is processed, in a single-substrate process. The process temperature during the processing is recorded directly at the substrate or at a holding device for the substrate. The process includes introducing a substrate, which bears a layer to be oxidized uncovered in an edge region in a layer stack, into a heating device, passing an oxidation gas onto the substrate, heating the substrate to a process temperature, which is recorded during the processing via a temperature of the holding device which holds the substrate, and controlling the substrate temperature to a desired temperature or temperature curve during the processing.
摘要翻译：提出了一种保持装置，其中在单衬底工艺中处理待氧化的层。处理期间的处理温度直接记录在基板或基板的保持装置上。该方法包括将在衬层的边缘区域中被覆盖的未被覆盖的层的衬底引入到加热装置中，将氧化气体传递到衬底上，将衬底加热到处理温度，该过程温度在通过保持基板的保持装置的温度进行处理，并且在处理期间将基板温度控制到期望的温度或温度曲线。

5. 发明授权

US07615499B2 Method for oxidizing a layer, and associated holding devices for a substrate 有权
标题翻译：用于氧化层的方法以及用于衬底的相关保持装置
公开(公告)号：US07615499B2
公开(公告)日：2009-11-10
申请号：US10522505
申请日：2003-07-26
申请人： Hin-Yiu Chung , Thomas Gutt
发明人： Hin-Yiu Chung , Thomas Gutt
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/3247 , H01L21/02178 , H01L21/02233 , H01L21/02255 , H01L21/31666 , H01L21/3228 , H01L21/67115 , H01L21/68735 , H01S5/18311 , Y10S438/94
摘要： A method is presented in which a layer which is to be oxidized is processed, in a single-substrate process. The process temperature during the processing is recorded directly at the substrate or at a holding device for the substrate. The method includes introducing a substrate, which bears a layer to be oxidized uncovered in an edge region in a layer stack, into a heating device, passing an oxidation gas onto the substrate, heating the substrate to a process temperature, which is recorded during the processing via a temperature of a holding device which holds the substrate, and controlling the substrate temperature to a desired temperature or temperature curve during the processing.
摘要翻译：提出了一种方法，其中在单衬底工艺中处理待氧化的层。处理期间的处理温度直接记录在基板或基板的保持装置上。该方法包括将在衬层的边缘区域中未被覆盖的被氧化层的衬底引入加热装置中，将氧化气体通入衬底，将衬底加热到处理温度通过保持基板的保持装置的温度进行处理，并且在处理期间将基板温度控制到期望的温度或温度曲线。

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