专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100111513A1 HEAT TREATMENT APPARATUS AND METHOD FOR HEATING SUBSTRATE BY PHOTO-IRRADIATION 有权
标题翻译：热处理装置和通过照相辐射加热基板的方法
公开(公告)号：US20100111513A1
公开(公告)日：2010-05-06
申请号：US12563409
申请日：2009-09-21
申请人： Hideo NISHIHARA , Shinichi KATO
发明人： Hideo NISHIHARA , Shinichi KATO
IPC分类号： F24J3/00
CPC分类号： H01L21/67115 , H01L21/26513 , H01L21/2686
摘要： Two-step photo-irradiation heat treatment is performed so that a total photo-irradiation time is not more than one second and that a first step of photo-irradiation of a semiconductor wafer is performed with a light-emission output that averages out at a first light-emission output and a second step of photo-irradiation of the semiconductor wafer is performed in accordance with an output waveform that peaks at a second light-emission output that is higher than both average and maximum light-emission outputs in the first step. Performing preliminary photo-irradiation with a relatively low light-emission output in the first step and then performing intense photo-irradiation with a higher peak in the second step enables the surface temperature of a semiconductor wafer to increase further with a smaller amount of energy than in conventional cases, while preventing the semiconductor wafer from shattering.
摘要翻译：进行两步光照射热处理，使得总的光照射时间不超过1秒，并且利用平均在a的光发射输出进行半导体晶片的光照射的第一步骤第一发光输出和半导体晶片的光照射的第二步骤根据在第二发光输出处峰值的输出波形进行，该输出波形高于第一步骤中的平均和最大发光输出。在第一步骤中以相对低的发光输出进行初步光照射，然后在第二步骤中用较高的峰进行强光照射使得半导体晶片的表面温度能够以更少量的能量进一步增加，在常规情况下，同时防止半导体晶片破碎。

2. 发明授权

US06518547B2 Heat treatment apparatus 有权
标题翻译：热处理设备
公开(公告)号：US06518547B2
公开(公告)日：2003-02-11
申请号：US09788086
申请日：2001-02-16
申请人： Mitsukazu Takahashi , Hideo Nishihara , Yoshio Ito
发明人： Mitsukazu Takahashi , Hideo Nishihara , Yoshio Ito
IPC分类号： F27B514
CPC分类号： H01L21/67115 , H05B3/0047
摘要： A substrate heat treatment apparatus irradiating a substrate such as a semiconductor wafer with light and performing heat treatment is provided. 19 lamps 82 are arranged on a plane in the form of a honeycomb to form a lamp group 81. The lamp group 81 has 6-fold rotation symmetry about a symmetry axis XR. A substrate W is rotated about a rotation axis XW in a plane parallel to that formed by the lamp group 81. The symmetry axis XR of the lamp group 81 and the rotation axis XW of the substrate W are displaced for relaxing peaks and bottoms of illuminance distribution on the substrate W resulting from regularity of arrangement of the lamp group 81. Consequently, fluctuation of radial illuminance distribution on the substrate W is reduced and improving uniformity is improved. When the uniformity of radial illuminance distribution on the substrate W is improved, temperature uniformity of the substrate W in heat treatment can be ensured.
摘要翻译：提供了用光照射诸如半导体晶片的基板并进行热处理的基板热处理设备。 19个灯82布置在蜂窝形式的平面上以形成灯组81.灯组81围绕对称轴XR具有6倍的旋转对称性。基板W在与灯组81形成的平面平行的平面内绕旋转轴线XW旋转。灯组81的对称轴XR和基板W的旋转轴XW移位，以放宽照度的峰值和底部由于灯组81的布置的规则性而导致的基板W上的分布。因此，基板W上的径向照度分布的波动减小，并且提高了均匀性。当基板W上的径向照度分布的均匀性提高时，能够确保热处理时的基板W的温度均匀性。

3. 发明授权

US08559799B2 Heat treatment apparatus and method for heating substrate by photo-irradiation 有权
标题翻译：热处理装置及通过光照射加热基板的方法
公开(公告)号：US08559799B2
公开(公告)日：2013-10-15
申请号：US12563409
申请日：2009-09-21
申请人： Hideo Nishihara , Shinichi Kato
发明人： Hideo Nishihara , Shinichi Kato
IPC分类号： F26B19/00
CPC分类号： H01L21/67115 , H01L21/26513 , H01L21/2686
摘要： Two-step photo-irradiation heat treatment is performed so that a total photo-irradiation time is not more than one second and that a first step of photo-irradiation of a semiconductor wafer is performed with a light-emission output that averages out at a first light-emission output and a second step of photo-irradiation of the semiconductor wafer is performed in accordance with an output waveform that peaks at a second light-emission output that is higher than both average and maximum light-emission outputs in the first step. Performing preliminary photo-irradiation with a relatively low light-emission output in the first step and then performing intense photo-irradiation with a higher peak in the second step enables the surface temperature of a semiconductor wafer to increase further with a smaller amount of energy than in conventional cases, while preventing the semiconductor wafer from shattering.
摘要翻译：进行两步光照射热处理，使得总的光照射时间不超过1秒，并且利用平均在a的光发射输出进行半导体晶片的光照射的第一步骤第一发光输出和半导体晶片的光照射的第二步骤根据在第二发光输出处峰值的输出波形进行，该输出波形高于第一步骤中的平均和最大发光输出。在第一步骤中以相对低的发光输出进行初步光照射，然后在第二步骤中用较高的峰进行强光照射使得半导体晶片的表面温度能够以更少量的能量进一步增加，在常规情况下，同时防止半导体晶片破碎。

4. 发明申请

US20060291835A1 Susceptor for heat treatment and heat treatment apparatus 审中-公开
标题翻译：受体用于热处理和热处理设备
公开(公告)号：US20060291835A1
公开(公告)日：2006-12-28
申请号：US11473847
申请日：2006-06-23
申请人： Yoshihide Nozaki , Hideo Nishihara , Hiroki Kiyama
发明人： Yoshihide Nozaki , Hideo Nishihara , Hiroki Kiyama
IPC分类号： A21B2/00
CPC分类号： H01L21/67115 , H01L21/68735
摘要： A susceptor for holding a semiconductor wafer when flash heating is performed by exposing the semiconductor wafer to a flash of light from flash lamps is formed with a recessed portion of a concave configuration having an outer diameter greater than the diameter of the semiconductor wafer, as seen in plan view. When the susceptor is viewed from above, the concave configuration of the recessed portion is greater in plan view size than the semiconductor wafer. The susceptor formed with the recessed portion holds the semiconductor wafer in such a manner that an inner wall surface of the recessed portion supports a peripheral portion of the semiconductor wafer. As a result, a gap filled with a layer of gas is formed between the lower surface of the semiconductor wafer and the upper surface of the susceptor, to prevent a crack in the semiconductor wafer when the semiconductor wafer is exposed to a flash of light from the flash lamps.
摘要翻译：当通过将半导体晶片暴露于来自闪光灯的闪光来进行闪光加热时，用于保持半导体晶片的感受体形成有具有大于半导体晶片的直径的外径的凹形构造的凹部，如图所示在平面图。当从上方观察基座时，凹部的凹形构造的平面图尺寸大于半导体晶片。形成有凹部的基座以这样的方式保持半导体晶片，使得凹部的内壁表面支撑半导体晶片的周边部分。结果，在半导体晶片的下表面和基座的上表面之间形成填充有气体层的间隙，以防止当半导体晶片暴露于闪光时的半导体晶片中的裂纹闪光灯。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式