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1. 发明专利

JP2005066747A Kitchen knife sharpening auxiliary stand 审中-公开
标题翻译：厨房刀切割辅助架
公开(公告)号：JP2005066747A
公开(公告)日：2005-03-17
申请号：JP2003299503
申请日：2003-08-25
申请人： Hidenori Nakanishi , 秀徳中西
发明人： NAKANISHI HIDENORI
IPC分类号： B24B3/36
摘要： PROBLEM TO BE SOLVED: To provide a kitchen knife sharpening auxiliary stand for easily sharpening a kitchen knife. SOLUTION: Four arms are combined by two hinges and a pair of parallel crank mechanisms, and one end is fitted to a pedestal 1 using a post 2 as a rotary shaft, while a knife support base 14 is mounted to the opposite side through a hinge 13. As to the movement of the kitchen knife support base 14, a contact angle of a cutting edge of the kitchen knife with the upper face of a grinding wheel is kept constant, but other longitudinal and lateral movement and operation of pressing the cutting edge to the grinding wheel can be freely performed. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一个厨刀刀磨刀辅助支架，方便磨刀厨刀。解决方案：四个臂通过两个铰链和一对平行的曲柄机构组合，并且一端使用柱2作为旋转轴安装到基座1上，而刀支撑座14安装到相对侧关于厨刀支撑座14的移动，厨刀的切割刃与砂轮的上表面的接触角保持恒定，但是其他纵向和横向移动以及按压操作可以自由地进行到砂轮的切削刃。版权所有（C）2005，JPO＆NCIPI

2. 发明授权

US5428005A Superconducting thin film of compound oxide and a process of preparing the same 失效
标题翻译：复合氧化物的超导薄膜及其制备方法
公开(公告)号：US5428005A
公开(公告)日：1995-06-27
申请号：US259348
申请日：1994-06-14
申请人： Takashi Matsuura , Keizo Harada , Hidenori Nakanishi , Hideo Itozaki
发明人： Takashi Matsuura , Keizo Harada , Hidenori Nakanishi , Hideo Itozaki
IPC分类号： C01G1/00 , C30B29/22 , H01B12/06 , H01B13/00 , H01L39/02 , H01L39/12 , B32B9/00
CPC分类号： H01L39/2435 , H01L39/128 , Y10S428/93 , Y10S505/701
摘要： A superconducting thin film of compound oxide material deposited on a substrate, comprising a plurality of a-axis or b-axis oriented unit layers (2) and a plurality of c-axis oriented unit layers (1), each unit layer (1, 2) being made of the compound oxide material and being laminated alternately one over another on the substrate (3).
摘要翻译：沉积在基板上的复合氧化物材料的超导薄膜包括多个a轴或b轴定向单元层（2）和多个c轴取向单元层（1），每个单位层（1， 2）由复合氧化物材料制成，并且在基板（3）上交替层叠。

3. 发明授权

US5292718A Process for preparing superconducting junction of oxide superconductor 失效
标题翻译：制备氧化物超导体超导结的方法
公开(公告)号：US5292718A
公开(公告)日：1994-03-08
申请号：US957639
申请日：1992-10-06
申请人： Saburo Tanaka , Hidenori Nakanishi , Hideo Itozaki , Takashi Matsuura
发明人： Saburo Tanaka , Hidenori Nakanishi , Hideo Itozaki , Takashi Matsuura
IPC分类号： H01L39/24 , B05D5/12
CPC分类号： H01L39/2496 , Y10S505/701 , Y10S505/702 , Y10S505/73 , Y10S505/731 , Y10S505/732
摘要： Improvement in a process for fabricating a superconducting junction by depositing successively a first oxide superconductor thin layer, a non-superconducting intermediate thin film layer and a second oxide superconductor thin film layer on a substrate in this order.In the invention, the non-superconducting intermediate thin film layer is composed of MgO and the substrate is preheated at 600.degree.-650.degree. C. for at least 5 minutes in the presence of O.sub.2, and is heated at a temperature between 200.degree. and 400.degree. C. during the non-superconducting intermediate thin film layer is deposited.
摘要翻译：通过在衬底上依次沉积第一氧化物超导体薄层，非超导中间薄膜层和第二氧化物超导体薄膜层来制造超导结的工艺的改进。在本发明中，非超导中间薄膜层由MgO构成，在O 2存在下将基板在600〜650℃预热至少5分钟，并在200度〜在非超导中间薄膜层期间沉积400℃。

4. 发明授权

US5258366A Laser evaporation method for forming high Tc superconducting films 失效
标题翻译：用于形成高Tc超导薄膜的激光蒸发方法
公开(公告)号：US5258366A
公开(公告)日：1993-11-02
申请号：US921336
申请日：1992-07-29
申请人： Tatsuoki Nagaishi , Hidenori Nakanishi , Saburo Tanaka , Hideo Itozaki
发明人： Tatsuoki Nagaishi , Hidenori Nakanishi , Saburo Tanaka , Hideo Itozaki
IPC分类号： C23C14/34 , C23C14/28 , C30B29/22 , H01B12/06 , H01B13/00 , H01L21/203 , H01L39/24 , B05D3/06 , B05D5/12
CPC分类号： H01L39/2448 , C23C14/28 , Y10S505/73 , Y10S505/732
摘要： Improvement in a method for preparing a superconducting thin film of compound oxide on a substrate (6) by laser evaporation technique. A rear surface of a target (7) used is cooled forcedly by a cooling system (9) during film formation.

5. 发明授权

US5240904A Process for preparing a-axis oriented superconducting oxide thin films 失效
标题翻译：用于制备面向轴的超导氧化物薄膜的方法
公开(公告)号：US5240904A
公开(公告)日：1993-08-31
申请号：US707798
申请日：1991-05-30
申请人： Saburo Tanaka , Hidenori Nakanishi , Hideo Itozaki
发明人： Saburo Tanaka , Hidenori Nakanishi , Hideo Itozaki
IPC分类号： H01L39/24
CPC分类号： H01L39/2461 , Y10S505/73 , Y10S505/731 , Y10S505/732
摘要： Improvement in a process for preparing a-axis oriented thin film of high-Tc oxide superconducting material by laser evaporation method. Before the a-axis oriented thin film of oxide superconducting material is deposited by laser evaporation method, an under-layer having an a-axis orientation of the crystal of the same oxide superconducting material is deposited on a substrate previously by sputtering.

6. 发明授权

US5357059A Construction of electrical connection to oxide superconductor 失效
标题翻译：电连接到氧化物超导体的构造
公开(公告)号：US5357059A
公开(公告)日：1994-10-18
申请号：US545618
申请日：1990-06-29
申请人： Saburo Tanaka , Hideo Itozaki , Hidenori Nakanishi
发明人： Saburo Tanaka , Hideo Itozaki , Hidenori Nakanishi
IPC分类号： H01L39/00 , H01L39/24 , H01B12/00
CPC分类号： H01L39/2474 , Y10S505/706 , Y10S505/925
摘要： An electrical connection between an electric conductor and an oxide superconductor is effected without the intermediary of a thin insulating layer that is formed by leaving the oxide superconductor in the atmosphere. This electrical connection is formed by removing the thin insulating layer that is formed by leaving the oxide superconductor in the atmosphere, and by electrically connecting the electric conductor and an exposed surface of the oxide superconductor.
摘要翻译：电导体和氧化物超导体之间的电连接是在没有通过将氧化物超导体留在大气中而形成的薄绝缘层的介质的情况下实现的。通过去除通过在氧化物中留下氧化物超导体而形成的薄绝缘层，并且通过电连接导电体和氧化物超导体的暴露表面而形成该电连接。

7. 发明授权

US5252553A Process for preparing a superconducting thin film of compound oxide 失效
标题翻译：制备复合氧化物超导薄膜的方法
公开(公告)号：US5252553A
公开(公告)日：1993-10-12
申请号：US885848
申请日：1992-05-20
申请人： Hidenori Nakanishi , Shinichi Shikata , Hideo Itozaki
发明人： Hidenori Nakanishi , Shinichi Shikata , Hideo Itozaki
IPC分类号： C23C14/08 , C30B29/22 , H01L39/24 , H01L39/00 , C23C14/34
CPC分类号： H01L39/2461 , Y10S505/731 , Y10S505/732 , Y10S505/736
摘要： In order to prepare a good quality crystalline thin film of compound oxide superconductor on a silicon wafer, before the thin film of compound oxide superconductor is deposited on the silicon wafer, the silicon wafer is first heated at a temperature of higher than 900.degree. C. in a high vacuum of less than 10.sup.-6 Torr, then, a thin film of ZrO.sub.2 is deposited on the silicon wafer, and finally, the thin film of ZrO.sub.2 deposited on the silicon wafer is annealed in air at a temperature of 800.degree. to 850.degree. C.

8. 发明授权

US5250511A Laser evaporation method for preparing a superconducting oxide thin film 失效
标题翻译：用于制备超导氧化物薄膜的激光蒸发方法
公开(公告)号：US5250511A
公开(公告)日：1993-10-05
申请号：US921028
申请日：1992-07-29
申请人： Tatsuoki Nagaishi , Hidenori Nakanishi , Saburo Tanaka , Hideo Itozaki
发明人： Tatsuoki Nagaishi , Hidenori Nakanishi , Saburo Tanaka , Hideo Itozaki
IPC分类号： C23C14/28 , C30B29/22 , H01B12/06 , H01B13/00 , H01L39/24 , B05D3/06 , B05D5/12
CPC分类号： H01L39/2448 , C23C14/28 , Y10S505/73 , Y10S505/732
摘要： Method for preparing a superconducting thin film of compound oxide having improved properties on a substrate by laser evaporation technique. A target has a surface area which is smaller than an irradiation area of a spot of a laser beam used, so that whole surface of the surface is irradiated with the laser beam.

9. 发明授权

US5151408A Process for preparing a-axis oriented high-temperature superconducting thin films 失效
标题翻译：制备面向A轴的高温超导薄膜的工艺
公开(公告)号：US5151408A
公开(公告)日：1992-09-29
申请号：US668263
申请日：1991-03-11
申请人： Saburo Tanaka , Hidenori Nakanishi , Hideo Itozaki
发明人： Saburo Tanaka , Hidenori Nakanishi , Hideo Itozaki
IPC分类号： H01L39/24
CPC分类号： H01L39/2461 , Y10S505/731 , Y10S505/732
摘要： A process for preparing a-axis oriented thin film of oxide superconducting material on a substrate by two steps. In the first step, an under-layer of an oxide superconducting material is deposited on the substrate under such a condition that the substrate is heated at a temperature which is suitable to realize an a-axis orientation of crystal of the oxide superconducting material. In the second step, an upper-layer of the same oxide superconducting material is deposited on a surface of the resulting under-layer under such a condition that the substrate is heated at a temperature which is lowered by 10.degree. to 100.degree. C. than the temperature which is used in the first step.

10. 发明授权

US06302701B1 RF connector with impedance matching tab 有权
标题翻译： RF连接器，带阻抗匹配片
公开(公告)号：US06302701B1
公开(公告)日：2001-10-16
申请号：US09584010
申请日：2000-05-30
申请人： Thomas J. Miller, Jr. , Yuan-Hua Kao , Bettina A. Nechay , Hidenori Nakanishi , Takashi Igarashi , Motoyoshi Tanaka
发明人： Thomas J. Miller, Jr. , Yuan-Hua Kao , Bettina A. Nechay , Hidenori Nakanishi , Takashi Igarashi , Motoyoshi Tanaka
IPC分类号： H01R1200
CPC分类号： H01R24/44 , H01R24/52 , H01R2103/00
摘要： A sub-miniature push-on RF connector for connecting a transmission line to a signal sink. The connector has a shielded transmission line section having a signal line and a ground line extending axially through the connector. A center pin is coupled to the signal line and extends from the center of a front face of the connector in an axial direction. A semicircular tab coupled to the ground line extends from the front face of the connector substantially along the length of the center pin and partially surrounding the center pin to reduce an air gap impedance, the tab having first and second wire bonding surfaces at the ends of the semicircular shape thereof and disposed adjacent to said center pin.
摘要翻译：用于将传输线连接到信号接收器的小型推式射频连接器。连接器具有屏蔽传输线部分，其具有信号线和沿着连接器轴向延伸的接地线。中心销耦合到信号线，并从连接器的前表面的中心沿轴向延伸。耦合到接地线的半圆形突片基本上沿着中心销的长度从连接器的前表面延伸，并部分地围绕中心销，以减小气隙阻抗，该突片在第一和第二引线接合表面位于其半圆形并且与所述中心销相邻地设置。

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