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1. 发明申请

US20110176893A1 VACUUM PROCESSING APPARATUS 有权
标题翻译：真空加工设备
公开(公告)号：US20110176893A1
公开(公告)日：2011-07-21
申请号：US12712834
申请日：2010-02-25
申请人： Tsutomu NAKAMURA , Hidenobu Tanimura , Yuya Mizobe
发明人： Tsutomu NAKAMURA , Hidenobu Tanimura , Yuya Mizobe
IPC分类号： H01L21/673 , H01L21/677
CPC分类号： H01L21/67772 , H01L21/67766
摘要： A vacuum processing apparatus includes a transfer container for transferring a wafer in the internal space thereof reduced in pressure, a vacuum vessel coupled to the side wall of the vacuum vessel and including a processing chamber having a sample stage therein on which a wafer to be processed is mounted, a lid member opened or closed by rotation above the vacuum vessel, an inner chamber member arranged in the vacuum vessel and making up the inner wall of the processing chamber, and a jig coupled to the side wall of the vacuum vessel to lift and hold the inner chamber member by being coupled thereto. The jig includes a first joint portion having vertical and horizontal shafts, an extensible arm portion rotatable around each shaft of the first joint portion, and a second joint portion with the inner chamber member adapted to rotate around the horizontal axis thereof.
摘要翻译：真空处理装置包括：转印容器，用于在压缩的内部空间中转印晶片;耦合到真空容器的侧壁的真空容器，包括处理室，其中具有待加工晶片的样品台安装有通过在真空容器上旋转而打开或关闭的盖构件，布置在真空容器中并构成处理室的内壁的内室构件以及联接到真空容器的侧壁的夹具以提升并且通过与其连接而保持内室构件。夹具包括具有垂直和水平轴的第一接合部分，可围绕第一接合部分的每个轴转动的可延伸臂部分，以及适于围绕其水平轴线旋转的第二接合部分。

2. 发明授权

US08532818B2 Vacuum chamber 失效
标题翻译：真空室
公开(公告)号：US08532818B2
公开(公告)日：2013-09-10
申请号：US12712861
申请日：2010-02-25
申请人： Tomohiro Ohashi , Tsutomu Nakamura , Hidenobu Tanimura , Michiaki Kobayashi
发明人： Tomohiro Ohashi , Tsutomu Nakamura , Hidenobu Tanimura , Michiaki Kobayashi
IPC分类号： G06F7/00
CPC分类号： H01L21/67766 , H01L21/67778
摘要： A vacuum chamber includes: a vacuum vessel arranged at the backward side, where a wafer of a processing subject is processed inside an internal processing chamber; a transfer chamber arranged at the forward side, where said wafer is transferred at the inside thereof under atmospheric pressure; a cassette stage arranged at the forward of this transfer chamber, where a cassette storing said wafer is mounted; a lock chamber connected with said transfer chamber at the backward of said transfer chamber; a robot arranged inside said transfer chamber, where said wafer is transferred between said cassette and said lock chamber; and an aligning machine for making position of said wafer fit with the predetermined position, wherein the wafer is transferred to said lock chamber, after performing alignment of said wafer on said aligning machine, in the case where displacement amount of position of this wafer is larger than the predetermined value.
摘要翻译：真空室包括：设置在后方的真空容器，处理对象的晶片在内部处理室内处理; 传送室，其布置在前侧，其中所述晶片在其大气压下在其内部传送; 设置在该传送室前方的盒级，其中安装有存储所述晶片的盒; 在所述传送室的后方与所述传送室连接的锁定室; 布置在所述传送室内部的机器，其中所述晶片在所述盒和所述锁定室之间传送; 以及用于使所述晶片的位置与所述预定位置配合的对准机，其中在所述晶片位于所述对准机器的位置的位移量较大的情况下，在将所述晶片对准所述对准机器之后，将所述晶片转移到所述锁定室超过预定值。

3. 发明申请

US20100186672A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20100186672A1
公开(公告)日：2010-07-29
申请号：US12379643
申请日：2009-02-26
申请人： Koji Okuda , Tsutomu Nakamura , Michiaki Kobayashi , Masakazu Isozaki , Hidenobu Tanimura
发明人： Koji Okuda , Tsutomu Nakamura , Michiaki Kobayashi , Masakazu Isozaki , Hidenobu Tanimura
IPC分类号： C23C16/00
CPC分类号： C23C16/4586 , C23C16/505 , H01L21/67109 , H01L21/6719 , H01L21/68785
摘要： A plasma processing apparatus composed of a processing chamber in a vacuum vessel to which a gas is fed to form a plasma, a sample stage in which a channel for a heat exchange medium is formed, beams for supporting the sample stage in the horizontal direction, a cylindrical space at atmospheric pressure formed below the channel in the sample stage, coupling paths for communicating the inner wall of the cylindrical space with the exterior of the vacuum vessel, a piping conduit for medium formed in the coupling path, a drive mechanism to drive pins for a wafer, and metal blocks covering junctions between the piping conduits for medium and the sample stage, whereby a gas at high temperature is supplied to between the metal blocks and is exhausted through the coupling path.
摘要翻译：一种等离子体处理装置，由真空容器内的供给气体而形成等离子体的处理室，形成有热交换介质用通道的样品台，水平方向支撑样品台的光束，大气压下形成的圆柱形空间，形成在样品台的通道下方，用于将圆柱形空间的内壁与真空容器的外部连通的连接路径，形成在联接路径中的介质的管道导管，驱动机构用于晶片的引脚和覆盖用于介质和样品台的管道导管之间的接合处的金属块，由此将高温气体供应到金属块之间并通过耦合路径排出。

4. 发明申请

US20070066204A1 Load port 审中-公开
标题翻译：加载端口
公开(公告)号：US20070066204A1
公开(公告)日：2007-03-22
申请号：US11405421
申请日：2006-04-18
申请人： Hidenobu Tanimura , Minoru Soraoka , Shinji Yokoyama , Noriyoshi Toyoda
发明人： Hidenobu Tanimura , Minoru Soraoka , Shinji Yokoyama , Noriyoshi Toyoda
IPC分类号： B08B15/02
CPC分类号： H01L21/67775 , H01L21/67017 , H01L21/67772
摘要： A load port is provided with a table and a plate. The table is arranged on a side of a front wall of an atmospheric transfer unit for transferring a piece of material under processing and is adapted to mount on it a container with the piece of material received in the same. The plate serves to isolate an interior of the atmospheric transfer unit from an exterior of the atmospheric transfer unit. The load port includes an exhaust duct arranged on a rear side of the plate and a fan arranged in a lower extremity of the exhaust duct. By the exhaust duct and the fan, an internal atmosphere of the atmospheric transfer unit can be exhausted into the atmosphere.
摘要翻译：装载端口设有工作台和板。工作台布置在大气传送单元的前壁的一侧，用于传送正在加工的一块材料，并且适于在其上安装容纳该材料的容器。该板用于将大气传送单元的内部与大气传送单元的外部隔离。负载端口包括布置在板的后侧的排气管和布置在排气管的下端的风扇。通过排风管和风扇，大气转移单元的内部气氛可以排放到大气中。

5. 外观设计

USD703160S1 Grounded electrode for a plasma processing apparatus 有权
标题翻译：等离子体处理装置的接地电极
公开(公告)号：USD703160S1
公开(公告)日：2014-04-22
申请号：US29397274
申请日：2011-07-14
申请人： Hidenobu Tanimura
设计人： Hidenobu Tanimura

6. 发明授权

US08366370B2 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US08366370B2
公开(公告)日：2013-02-05
申请号：US12712834
申请日：2010-02-25
申请人： Tsutomu Nakamura , Hidenobu Tanimura , Yuya Mizobe
发明人： Tsutomu Nakamura , Hidenobu Tanimura , Yuya Mizobe
IPC分类号： H01L21/677
CPC分类号： H01L21/67772 , H01L21/67766
摘要： A vacuum processing apparatus includes a transfer container for transferring a wafer in the internal space thereof reduced in pressure, a vacuum vessel coupled to the side wall of the vacuum vessel and including a processing chamber having a sample stage therein on which a wafer to be processed is mounted, a lid member opened or closed by rotation above the vacuum vessel, an inner chamber member arranged in the vacuum vessel and making up the inner wall of the processing chamber, and a jig coupled to the side wall of the vacuum vessel to lift and hold the inner chamber member by being coupled thereto. The jig includes a first joint portion having vertical and horizontal shafts, an extensible arm portion rotatable around each shaft of the first joint portion, and a second joint portion with the inner chamber member adapted to rotate around the horizontal axis thereof.
摘要翻译：真空处理装置包括：转印容器，用于在压缩的内部空间中转印晶片;耦合到真空容器的侧壁的真空容器，包括处理室，其中具有待加工晶片的样品台安装有通过在真空容器上旋转而打开或关闭的盖构件，布置在真空容器中并构成处理室的内壁的内室构件以及联接到真空容器的侧壁的夹具以提升并且通过与其连接而保持内室构件。夹具包括具有垂直和水平轴的第一接合部分，可围绕第一接合部分的每个轴转动的可延伸臂部分，以及适于围绕其水平轴线旋转的第二接合部分。

7. 发明申请

US20120012252A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20120012252A1
公开(公告)日：2012-01-19
申请号：US12856863
申请日：2010-08-16
申请人： Hironori Kusumoto , Hideki Kihara , Tsutomu Nakamura , Hidenobu Tanimura , Yuuya Mizobe
发明人： Hironori Kusumoto , Hideki Kihara , Tsutomu Nakamura , Hidenobu Tanimura , Yuuya Mizobe
IPC分类号： H01L21/465
CPC分类号： H01J37/321 , H01J37/3266 , H01J37/32816
摘要： A plasma processing apparatus capable of detecting sealing abnormality of each gate is disclosed. This apparatus includes an outer chamber constituting a vacuum vessel, an inner chamber disposed within the outer chamber for permitting a plasma to be formed in a vacuumed processing chamber as internally provided therein, a workpiece table below the processing chamber for holding thereon a wafer to be processed, a first gate valve disposed in a sidewall of the inner chamber for driving a gate to open and close while the wafer is transferred therethrough, and a second gate valve disposed in a sidewall of the outer chamber for opening and closing a gate while the wafer is transferred therethrough. After the wafer is put on the table, a pressure variation of an intermediate room formed between the inner and outer chambers sealed by the gate valves closed, thereby detecting a decrease in sealing performance.
摘要翻译：公开了能够检测每个门的密封异常的等离子体处理装置。该装置包括构成真空容器的外室，设置在外室内的内室，用于允许在内部设置的真空处理室内形成等离子体;在处理室下面的用于保持晶片的工件台处理的第一闸阀，设置在内室的侧壁中，用于在晶片被转移通过时驱动门打开和关闭;以及第二闸阀，设置在外室的侧壁中，用于打开和关闭闸门，同时晶片转移通过。在将晶片放在工作台上之后，在由闸阀密封的内室和外室之间形成的中间室的压力变化关闭，从而检测密封性能的降低。

8. 发明申请

US20110137454A1 VACUUM CHAMBER 失效
标题翻译：真空室
公开(公告)号：US20110137454A1
公开(公告)日：2011-06-09
申请号：US12712861
申请日：2010-02-25
申请人： Tomohiro OHASHI , Tsutomu Nakamura , Hidenobu Tanimura , Michiaki Kobayashi
发明人： Tomohiro OHASHI , Tsutomu Nakamura , Hidenobu Tanimura , Michiaki Kobayashi
IPC分类号： H01L21/677 , H01L21/68
CPC分类号： H01L21/67766 , H01L21/67778
摘要： A vacuum chamber includes: a vacuum vessel arranged at the backward side, where a wafer of a processing subject is processed inside an internal processing chamber; a transfer chamber arranged at the forward side, where said wafer is transferred at the inside thereof under atmospheric pressure; a cassette stage arranged at the forward of this transfer chamber, where a cassette storing said wafer is mounted; a lock chamber connected with said transfer chamber at the backward of said transfer chamber; a robot arranged inside said transfer chamber, where said wafer is transferred between said cassette and said lock chamber; and an aligning machine for making position of said wafer fit with the predetermined position, wherein the wafer is transferred to said lock chamber, after performing alignment of said wafer on said aligning machine, in the case where displacement amount of position of this wafer is larger than the predetermined value.
摘要翻译：真空室包括：设置在后方的真空容器，处理对象的晶片在内部处理室内处理; 传送室，其布置在前侧，其中所述晶片在其大气压下在其内部传送; 设置在该传送室前方的盒级，其中安装有存储所述晶片的盒; 在所述传送室的后方与所述传送室连接的锁定室; 布置在所述传送室内部的机器，其中所述晶片在所述盒和所述锁定室之间传送; 以及用于使所述晶片的位置与所述预定位置相配合的对准机，其中在所述晶片位于所述对准机器的位置量较大的情况下，在将所述晶片对准所述对准机之后，将所述晶片转移到所述锁定室超过预定值。

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