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1. 发明授权

US5698156A Method of producing a silicon nitride based sintered body 失效
标题翻译：制造氮化硅基烧结体的方法
公开(公告)号：US5698156A
公开(公告)日：1997-12-16
申请号：US448189
申请日：1995-05-23
申请人： Takashi Matsuura , Akira Yamakawa , Hasaya Miyake
发明人： Takashi Matsuura , Akira Yamakawa , Hasaya Miyake
IPC分类号： C04B35/584 , C04B35/64 , C04B33/32 , C04B33/34 , C04B33/36 , C04B35/71
CPC分类号： C04B35/584 , C04B35/64
摘要： Provided herein is a me silicon nitride based sintered body composed only of uniform, fine crystal grains, and improved in both strength and fracture toughness in the middle and low temperature ranges. The crystalline silicon nitride powder thus produced is composed of crystal grains whose longer-axis diameter is not more than 200 nm or an amorphous silicon nitride powder is used as material powder. According to the disclosed method, the silicon nitride powder is sintered at a temperature of 1200.degree. C. to 1400.degree. C. or sintered with a product of sintering temperature (.degree. C.) and sintering time (sec) below 600000 (.degree. C. sec) at a temperature of 1400.degree. C. to 1900.degree. C. By this method, a silicon nitride based sintered body in which the longer-axis diameter of silicon nitride and/or sialon crystals is not more than 200 nm is obtained.
摘要翻译：本文提供了仅由均匀的细晶粒组成的I型氮化硅基烧结体，并且在中低温范围内提高了强度和断裂韧性。由此制造的结晶氮化硅粉末由长轴直径不大于200nm的晶粒或非晶氮化硅粉末用作材料粉末构成。根据所公开的方法，氮化硅粉末在1200℃至1400℃的温度下烧结，或烧结温度（℃）和烧结时间（秒）低于600000℃的产物烧结。秒），在1400℃〜1900℃的温度下，得到氮化硅和/或赛隆晶体的长轴径不大于200nm的氮化硅系烧结体。

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