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    • 4. 发明授权
    • Micromechanical sensor and method for its production
    • 微机械传感器及其生产方法
    • US06389902B2
    • 2002-05-21
    • US09781798
    • 2001-02-12
    • Robert AignerHans-Jörg TimmeThomas Bever
    • Robert AignerHans-Jörg TimmeThomas Bever
    • G01L900
    • B81C1/00801B81B2201/0257B81B2201/0264B81B2203/0127B81B2207/015B81C2201/0136H04R19/005H04R19/04H04R31/00
    • The invention relates to a micromechanical sensor and to a corresponding production method that includes the following steps: a) preparing a doped semiconductor wafer; b) applying an epitaxial layer that is doped in such a way that a jump in the charge carrier density in the interface between the semiconductor wafer and the epitaxial layer occurs; c) optionally etching ventilation holes traversing the epitaxial layer and optionally filling the ventilation holes with a sacrificial material; d) depositing at least one sacrificial layer, at least one spacing layer, a membrane and optionally a semiconductor circuit on the top side of the epitaxial layer using a technology known per se, wherein the semiconductor circuit may be applied after the membrane is formed or while depositing the layers required to form the membrane; e) etching a hole on the back part of the sensor, wherein the etching method is selected in such a way that etching advances in the direction of the top side and ceases in the interference between the wafer and the epitaxial layer by changing charge carrier concentration. The invention also relates to the utilization of the micromechanical sensor in pressure sensors or microphones.
    • 本发明涉及一种微机械传感器及相应的生产方法,包括以下步骤:a)制备掺杂半导体晶片; b)施加掺杂的外延层,使得发生半导体晶片和外延层之间的界面中的电荷载流子密度的跳跃; c)可选地蚀刻穿过外延层的通气孔并且可选地用牺牲材料填充通风孔; d)使用本身已知的技术在外延层的顶侧上沉积至少一个牺牲层,至少一个间隔层,膜和任选的半导体电路,其中半导体电路可以在膜被形成之后施加 同时沉积形成膜所需的层; e)蚀刻传感器后部的孔,其中蚀刻方法被选择为使得蚀刻沿着顶侧的方向前进并且通过改变电荷载流子浓度而在晶片和外延层之间的干涉中停止 。 本发明还涉及在压力传感器或麦克风中利用微机械传感器。