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1. 发明授权

US09417713B2 Image-capturing device for optical pointing apparatus having large and small area image-sensing units 有权
标题翻译：具有大小面积图像感测单元的光学指向装置的图像捕获装置
公开(公告)号：US09417713B2
公开(公告)日：2016-08-16
申请号：US13368637
申请日：2012-02-08
申请人： Sen Huang Huang , Hsin Chia Chen , Tzung Min Su , Han Chi Liu , Ho Ching Chien
发明人： Sen Huang Huang , Hsin Chia Chen , Tzung Min Su , Han Chi Liu , Ho Ching Chien
IPC分类号： G06F3/03 , G06F3/042
CPC分类号： G06F3/0317
摘要： An image-capturing device configured for an optical pointing apparatus includes a plurality of image-sensing units arranged adjacently. The plurality of image-sensing units are configured to sense images of a surface and generate sensing signals that are used for evaluating the velocity of the optical pointing apparatus. The image-capturing device is configured to use different image-sensing units arranged differently to sense the surface according to the velocity of the optical pointing apparatus. When the optical pointing apparatus moves at a first velocity, the image-capturing device uses the image-sensing units configured to occupy a smaller area to sense the surface. When the optical pointing apparatus moves at a second velocity, the image-capturing device uses the image-sensing units configured to occupy a larger area to sense the surface. The first velocity is lower than the second velocity.
摘要翻译：配置用于光学指向设备的图像捕获设备包括相邻布置的多个图像感测单元。多个图像感测单元被配置为感测表面的图像，并且生成用于评估光学指向设备的速度的感测信号。图像拍摄装置被配置为使用不同的图像感测单元，其不同地布置以根据光学指向装置的速度感测表面。当光学指示装置以第一速度移动时，图像捕获装置使用被配置为占据较小区域的图像感测单元来感测表面。当光学指示装置以第二速度移动时，图像拍摄装置使用被配置为占据更大面积的图像感测单元来感测表面。第一速度低于第二速度。

2. 发明授权

US08440540B2 Method for doping a selected portion of a device 有权
标题翻译：掺杂设备的选定部分的方法
公开(公告)号：US08440540B2
公开(公告)日：2013-05-14
申请号：US12572833
申请日：2009-10-02
申请人： Han-Chi Liu , Dun-Nian Yaung , Jen-Cheng Liu , Yuan-Hung Liu
发明人： Han-Chi Liu , Dun-Nian Yaung , Jen-Cheng Liu , Yuan-Hung Liu
IPC分类号： H01L21/76
CPC分类号： H01L27/14683 , H01L21/2652 , H01L21/266 , H01L21/76232 , H01L27/14627 , H01L27/1463
摘要： A method includes forming a protective layer with an opening over a substrate, thereafter implanting a dopant into a substrate region through the opening, the protective layer protecting a different substrate region, and reducing thickness of the protective layer. A different aspect includes etching a substrate to form a recess therein, thereafter implanting a dopant into a substrate region within the recess and through an opening in a protective layer provided over the substrate, and reducing thickness of the protective layer. Another aspect includes forming a protective layer over a substrate, forming photoresist having an opening over the protective layer, etching the protective layer through the opening to expose the substrate, etching the substrate to form a recess in the substrate, implanting a dopant into a substrate portion, the protective layer protecting a different substrate portion thereunder, and etching the protective layer to reduce its thickness.
摘要翻译：一种方法包括在衬底上形成具有开口的保护层，然后通过开口将掺杂剂注入到衬底区域中，保护层保护不同的衬底区域，并减小保护层的厚度。不同的方面包括蚀刻衬底以在其中形成凹陷，然后将掺杂剂注入到凹陷内的衬底区域中，并通过设置在衬底上的保护层中的开口，并且减小保护层的厚度。另一方面包括在衬底上形成保护层，在保护层上形成具有开口的光致抗蚀剂，通过开口蚀刻保护层以暴露衬底，蚀刻衬底以在衬底中形成凹陷，将掺杂剂注入到衬底中保护层保护其下的不同基板部分，并蚀刻保护层以减小其厚度。

3. 发明授权

US07879639B2 Method and device to reduce dark current in image sensors 有权
标题翻译：降低图像传感器暗电流的方法和装置
公开(公告)号：US07879639B2
公开(公告)日：2011-02-01
申请号：US11735226
申请日：2007-04-13
申请人： Chun-Yao Ko , Chung-Wei Chang , Han-Chi Liu , Shou-Gwo Wuu
发明人： Chun-Yao Ko , Chung-Wei Chang , Han-Chi Liu , Shou-Gwo Wuu
IPC分类号： H01L21/00
CPC分类号： H01L27/14689 , H01L27/14609
摘要： A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel area and a logic area, forming a light sensing element in the pixel area, and forming a first transistor in the pixel area and a second transistor in the logic area. The step of forming the first transistor in the pixel area and the second transistor in the logic area includes performing a first implant process in the pixel area and the logic area, performing a second implant process in the pixel area and the logic area, and performing a third implant process only in the logic area.
摘要翻译：制造图像传感器的方法包括提供具有像素区域和逻辑区域的半导体衬底，在像素区域中形成光感测元件，以及在像素区域中形成第一晶体管和在逻辑区域中形成第二晶体管。在逻辑区域中的像素区域和第二晶体管中形成第一晶体管的步骤包括在像素区域和逻辑区域中执行第一注入处理，在像素区域和逻辑区域中执行第二注入处理，以及执行仅在逻辑区域中进行第三次植入过程。

4. 发明申请

US20100181635A1 METHOD AND STRUCTURE FOR REDUCING CROSS-TALK IN IMAGE SENSOR DEVICES 有权
标题翻译：用于减少图像传感器装置中的交叉的方法和结构
公开(公告)号：US20100181635A1
公开(公告)日：2010-07-22
申请号：US12405454
申请日：2009-03-17
申请人： Ching-Chun Wang , Tzu-Hsuan Hsu , Han-Chi Liu , Chun-Ming Su
发明人： Ching-Chun Wang , Tzu-Hsuan Hsu , Han-Chi Liu , Chun-Ming Su
IPC分类号： H01L31/04 , H01L31/18
CPC分类号： H01L27/14689 , H01L27/1463 , H01L27/14643
摘要： Provided is a method of fabricating an image sensor device. The method includes providing a semiconductor substrate having a front side and a back side, forming a first isolation structure at the front side of the semiconductor substrate, thinning the semiconductor substrate from the back side, and forming a second isolation structure at the back side of the semiconductor substrate. The first and second isolation structures are shifted with respect to each other.
摘要翻译：提供了一种制造图像传感器装置的方法。该方法包括提供具有前侧和后侧的半导体衬底，在半导体衬底的前侧形成第一隔离结构，从背面减薄半导体衬底，并在第二隔离结构的背面形成第二隔离结构半导体衬底。第一和第二隔离结构相对于彼此移位。

5. 发明授权

US07732844B2 Crosstalk improvement through P on N structure for image sensor 有权
标题翻译：通过P on N结构对图像传感器进行串扰改善
公开(公告)号：US07732844B2
公开(公告)日：2010-06-08
申请号：US11682350
申请日：2007-03-06
申请人： Chung-Wei Chang , Han-Chi Liu , Chun-Yao Ko , Shou-Gwo Wuu
发明人： Chung-Wei Chang , Han-Chi Liu , Chun-Yao Ko , Shou-Gwo Wuu
IPC分类号： H01L31/062
CPC分类号： H01L27/1463 , H01L21/761 , H01L27/14603 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/14643 , H01L27/14689 , H01L31/035272
摘要： The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate having a first type of dopant; a semiconductor layer having a second type of dopant different from the first type of dopant and disposed on the semiconductor substrate; and an image sensor formed in the semiconductor layer.
摘要翻译：本公开提供了一种图像传感器半导体器件。半导体器件包括具有第一类掺杂剂的半导体衬底; 半导体层，其具有不同于所述第一类型掺杂剂的第二类型的掺杂剂并且设置在所述半导体衬底上; 以及形成在半导体层中的图像传感器。

6. 发明申请

US20090213259A1 Correlation Double Sampling Circuit for Image Sensor 有权
标题翻译：图像传感器的相关双重采样电路
公开(公告)号：US20090213259A1
公开(公告)日：2009-08-27
申请号：US12209199
申请日：2008-09-11
申请人： Tsung-Yi Su , Han-Chi Liu
发明人： Tsung-Yi Su , Han-Chi Liu
IPC分类号： H04N5/335
CPC分类号： H04N5/3575 , H04N5/374
摘要： A correlation double sampling (CDS) circuit for sampling a reset signal and a light-sensing signal outputted from a pixel column of an image sensor includes two sampling capacitors and four transistor switches. The operation of the CDS circuit needs not change polarities of the two sampling capacitors, such that MOS capacitors that have higher capacitance per unit area can be utilized for realizing the two sampling capacitors for reducing thermal noises induced when performing sampling. Additionally, fewer transistors are used in the CDS circuit, and thus charge injection noises caused by switching the transistor switches can also be reduced.
摘要翻译：用于对复位信号进行采样的相关双采样（CDS）电路和从图像传感器的像素列输出的感光信号包括两个采样电容器和四个晶体管开关。 CDS电路的操作不需要改变两个采样电容器的极性，使得具有较高每单位面积电容的MOS电容器可用于实现两个采样电容器，以减少在执行采样时引起的热噪声。此外，在CDS电路中使用更少的晶体管，因此也可以减少由开关晶体管开关引起的电荷注入噪声。

7. 发明申请

US20080251821A1 METHOD AND DEVICE TO REDUCE DARK CURRENT IN IMAGE SENSORS 有权
标题翻译：减少图像传感器中的暗电流的方法和装置
公开(公告)号：US20080251821A1
公开(公告)日：2008-10-16
申请号：US11735226
申请日：2007-04-13
申请人： Chun-Yao Ko , Chung-Wei Chang , Han-Chi Liu , Shou-Gwo Wuu
发明人： Chun-Yao Ko , Chung-Wei Chang , Han-Chi Liu , Shou-Gwo Wuu
IPC分类号： H01L31/062 , H01L21/00
CPC分类号： H01L27/14689 , H01L27/14609
摘要： A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel area and a logic area, forming a light sensing element in the pixel area, and forming a first transistor in the pixel area and a second transistor in the logic area. The step of forming the first transistor in the pixel area and the second transistor in the logic area includes performing a first implant process in the pixel area and the logic area, performing a second implant process in the pixel area and the logic area, and performing a third implant process only in the logic area.
摘要翻译：制造图像传感器的方法包括提供具有像素区域和逻辑区域的半导体衬底，在像素区域中形成光感测元件，以及在像素区域中形成第一晶体管和在逻辑区域中形成第二晶体管。在逻辑区域中的像素区域和第二晶体管中形成第一晶体管的步骤包括在像素区域和逻辑区域中执行第一注入处理，在像素区域和逻辑区域中执行第二注入处理，以及执行仅在逻辑区域中进行第三次植入过程。

8. 发明授权

US07389488B2 Method of finding driving strength and computer accessible record medium to store program thereof 失效
标题翻译：寻找驾驶强度的方法和计算机可访问记录介质来存储其程序
公开(公告)号：US07389488B2
公开(公告)日：2008-06-17
申请号：US10908748
申请日：2005-05-25
申请人： Peter H. Chen , Chih-Fu Chien , Han-chi Liu , Jyh-Herng Wang
发明人： Peter H. Chen , Chih-Fu Chien , Han-chi Liu , Jyh-Herng Wang
IPC分类号： G06F17/50 , H03K19/00
CPC分类号： G06F17/5036
摘要： A method of finding a driving strength and a record medium accessible by a computer to store a program thereof are provided. The method is adapted to find the driving strength of an output pin of a target cell. Wherein, the driving strength of the output pin of the target cell is provided from the driving strength of a corresponding last level device. In this method, at least one candidate standard cell is searched in a standard cell library according to the last level device. Then, the driving strength of the target cell is interpolated between the driving strengths of the candidate standard cells to obtain the driving strength of the output pin of the target cell.
摘要翻译：提供了一种找到驱动强度的方法和一种可由计算机访问以存储其程序的记录介质。该方法适于找出目标单元的输出引脚的驱动强度。其中，从相应的最后一级装置的驱动强度提供目标单元的输出引脚的驱动强度。在该方法中，根据最后一级设备在标准单元库中搜索至少一个候选标准单元。然后，在候选标准单元的驱动强度之间插入目标单元的驱动强度，以获得目标单元的输出引脚的驱动强度。

9. 发明授权

US06956519B1 Switched capacitor circuit of a pipeline analog to digital converter and a method for operating the switched capacitor circuit 失效
标题翻译：一种管线模数转换器的开关电容器电路和一种操作开关电容电路的方法
公开(公告)号：US06956519B1
公开(公告)日：2005-10-18
申请号：US10711877
申请日：2004-10-11
申请人： Jia-Jio Huang , Han-Chi Liu
发明人： Jia-Jio Huang , Han-Chi Liu
IPC分类号： H03M1/06 , H03M1/08 , H03M1/12 , H03M1/44 , H03M1/66
CPC分类号： H03M1/0863 , H03M1/0695 , H03M1/442
摘要： A switched capacitor circuit of a pipeline analog to digital converter. The pipeline ADC includes a clock generator, a signal reference circuit, and a plurality of switched capacitor circuit. Each switched capacitor includes an operational amplifier, a first sampling capacitor, a first signal input switch, a first reference input switch, a first reference reset switch, and a first feedback network. A method for operating the switched capacitor circuit includes after the first reference input switch turning off, turning on the first signal input switch to transmit a first input signal to the first sampling capacitor and turning on the first reference reset switch to transmit a common signal to a second terminal of the first reference input switch, turning off the first reference rest switch then turning off the first signal input switch, and after the first signal input switch turning off, turning on the first reference input switch.
摘要翻译：一种管道模数转换器的开关电容电路。流水线ADC包括时钟发生器，信号参考电路和多个开关电容器电路。每个开关电容器包括运算放大器，第一采样电容器，第一信号输入开关，第一参考输入开关，第一参考复位开关和第一反馈网络。用于操作开关电容器电路的方法包括在第一参考输入开关截止之后，接通第一信号输入开关以将第一输入信号发送到第一采样电容器，并接通第一参考复位开关以将公共信号传输到第一参考输入开关的第二端子，关闭第一参考停止开关，然后关闭第一信号输入开关，并且在第一信号输入开关关闭之后，打开第一参考输入开关。

10. 发明授权

US09041841B2 Image sensor having enhanced backside illumination quantum efficiency 有权
标题翻译：具有增强的背面照明量子效率的图像传感器
公开(公告)号：US09041841B2
公开(公告)日：2015-05-26
申请号：US12557154
申请日：2009-09-10
申请人： Yin-Kai Liao , Han-Chi Liu , Yuan-Hung Liu , Dun-Nian Yaung , Jen-Cheng Liu
发明人： Yin-Kai Liao , Han-Chi Liu , Yuan-Hung Liu , Dun-Nian Yaung , Jen-Cheng Liu
IPC分类号： H04N3/14 , H04N5/335 , H01L27/146
CPC分类号： H01L27/14629 , H01L21/76829 , H01L21/76831 , H01L27/14603 , H01L27/14614 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L27/14683 , H01L27/14685 , H04N3/155
摘要： A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region and a logic region. A first resist protect oxide (RPO) is formed over the pixel region, but not over the logic region. Silicide contacts are formed on the top of active devices formed in the pixel region, but not on the surface of the substrate in the pixel region, and silicide contacts are formed both on the top of active devices and on the surface of the substrate in the logic region. A second RPO is formed over the pixel region and the logic region, and a contact etch stop layer is formed over the second RPO. These layers help to reflect light back to the image sensor when light impinges the sensor from the backside of the substrate, and also helps prevent damage that occurs from overetching.
摘要翻译：公开了一种用于图像感测的系统和方法。实施例包括具有像素区域和逻辑区域的基板。在像素区域上形成第一抗蚀保护氧化物（RPO），但不在逻辑区域上。硅化物接触形成在像素区域中形成的有源器件的顶部上，而不是在像素区域中的衬底的表面上，并且在有源器件的顶部和衬底的表面上形成硅化物接触逻辑区域。在像素区域和逻辑区域上形成第二RPO，并且在第二RPO上形成接触蚀刻停止层。当光从基板的背面入射传感器时，这些层有助于将光反射回图像传感器，并且还有助于防止由过蚀刻引起的损坏。

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