专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2013002539A3 APPARATUS AND METHOD FOR GROWING SILICON CARBIDE SINGLE CRYSTAL 审中-公开
标题翻译：用于生长碳化硅单晶的装置和方法
公开(公告)号：WO2013002539A3
公开(公告)日：2013-03-14
申请号：PCT/KR2012005045
申请日：2012-06-26
申请人： SK INNOVATION CO LTD , KIM YOUNG SHOL , BAE SUN HYUK , HONG SUNG WAN
发明人： KIM YOUNG SHOL , BAE SUN HYUK , HONG SUNG WAN
IPC分类号： C30B29/36 , C30B11/00 , C30B23/00
CPC分类号： C30B9/06 , C30B29/36
摘要： Provided are an apparatus and a method for growing a silicon carbide single crystal by solution growth. The apparatus for growing a silicon carbide single crystal includes: a reaction chamber that is in a predetermined pressure state; a crucible that is provided in the reaction chamber, includes silicon (Si) or silicon carbide (SiC) powders or a mixture thereof charged therein, includes a silicon carbide seed provided at an upper portion of an inner side thereof and growing a silicon carbide and a seed connection bar extended from the silicon carbide seed, and is made of a graphite material; and a heating element that heats the crucible. An inner portion of the crucible is provided with at least one protrusion jaws, at least some or all of which are formed along an inner peripheral surface of the crucible, wherein the protrusion jaw is made of the graphite material.
摘要翻译：提供了一种通过溶液生长生长碳化硅单晶的设备和方法。用于生长碳化硅单晶的设备包括：处于预定压力状态的反应室; 设置在反应室中的坩埚包括填充在其中的硅（Si）或碳化硅（SiC）粉末或其混合物，包括设置在其内侧上部的碳化硅籽晶并生长碳化硅，以及从碳化硅种子延伸并由石墨材料制成的种子连接棒; 和加热坩埚的加热元件。坩埚的内部设置有至少一个突起颚，其中至少一些或全部沿坩埚的内周表面形成，其中突起颚由石墨材料制成。

2. 发明申请

WO2012018209A3 COMPOSITE FILM FOR PREVENTING FORGERY, AND COMPOSITE METHOD FOR PREVENTING FORGERY 审中-公开
标题翻译：防止咀嚼的复合膜以及防止咀嚼的复合方法
公开(公告)号：WO2012018209A3
公开(公告)日：2012-04-12
申请号：PCT/KR2011005648
申请日：2011-08-01
申请人： NANOBRICK CO LTD , JOO JAE-HYUN , HONG SUNG-WAN
发明人： JOO JAE-HYUN , HONG SUNG-WAN
IPC分类号： G02B5/20 , G02F1/1335
CPC分类号： B42D25/369 , B42D25/00 , B42D25/21 , B42D25/23 , B42D25/24 , B42D25/29 , B42D2033/16 , B42D2033/30 , B42D2035/20 , B42D2035/34 , G02B26/004 , G02F1/09 , G02F1/172 , G02F2001/094 , G07D7/04 , G07D7/12
摘要： According to one embodiment of the present invention, a composite film comprising a display region for preventing forgery is provided. The display region comprises a magnetic solution distributed in a curing medium. The magnetic solution is a colloidal solution in which a plurality of magnetic particles charged in the same polarity are dispersed in fluid, and an expressive material is present in the curing medium and is separate from the magnetic solution, wherein at least one of reflectivity and transmittance of the expressive material changes when a magnetic field is applied and a predetermined characteristic of the expressive material is expressed when a specific energy is applied.
摘要翻译：根据本发明的一个实施例，提供了一种包括用于防止伪造的显示区域的复合膜。显示区域包括分布在固化介质中的磁性溶液。磁性溶液是胶体溶液，其中以相同极性充电的多个磁性粒子分散在流体中，并且表现性物质存在于固化介质中并与磁性溶液分离，其中反射率和透射率中的至少一个的表现性材料在施加磁场时发生变化，并且当施加特定能量时表现性材料的预定特性被表达。

3. 发明申请

WO2013002540A3 APPARATUS AND METHOD FOR GROWING SILICON CARBIDE SINGLE CRYSTAL 审中-公开
标题翻译：用于生长碳化硅单晶的装置和方法
公开(公告)号：WO2013002540A3
公开(公告)日：2013-04-11
申请号：PCT/KR2012005048
申请日：2012-06-26
申请人： SK INNOVATION CO LTD , KIM YOUNG SHOL , BAE SUN HYUK , HONG SUNG WAN
发明人： KIM YOUNG SHOL , BAE SUN HYUK , HONG SUNG WAN
IPC分类号： C30B15/00 , C30B15/10 , C30B29/36 , H01L33/00
CPC分类号： C30B15/02 , C30B17/00 , C30B29/36
摘要： Provided are an apparatus and a method for growing a silicon carbide single crystal by solution growth. The apparatus for growing a silicon carbide single crystal includes: a reaction chamber that is in a predetermined pressure state; a crucible that is provided in the reaction chamber, includes silicon (Si) or silicon carbide (SiC) powders or a mixture thereof charged therein, includes a silicon carbide seed provided at an upper portion of an inner side thereof and growing a silicon carbide and a seed connection bar extended from the silicon carbide seed, and is made of a graphite material; and a heating element that heats the crucible. An inner portion of the crucible is provided with a cylindrical assisting tool having a plurality of pores formed at least at a side thereof and made of the graphite material.
摘要翻译：提供了一种通过溶液生长生长碳化硅单晶的设备和方法。用于生长碳化硅单晶的设备包括：处于预定压力状态的反应室; 设置在反应室中的坩埚包括填充在其中的硅（Si）或碳化硅（SiC）粉末或其混合物，包括设置在其内侧上部的碳化硅籽晶并生长碳化硅，以及从碳化硅种子延伸并由石墨材料制成的种子连接棒; 和加热坩埚的加热元件。坩埚的内部设置有圆柱形辅助工具，该辅助工具在其至少一侧形成有多个由石墨材料制成的孔。

4. 发明申请

WO2013002540A2 APPARATUS AND METHOD FOR GROWING SILICON CARBIDE SINGLE CRYSTAL 审中-公开
标题翻译：用于生产碳化硅单晶的装置和方法
公开(公告)号：WO2013002540A2
公开(公告)日：2013-01-03
申请号：PCT/KR2012/005048
申请日：2012-06-26
申请人： SK INNOVATION CO.,LTD. , KIM, Young Shol , BAE, Sun Hyuk , HONG, Sung Wan
发明人： KIM, Young Shol , BAE, Sun Hyuk , HONG, Sung Wan
CPC分类号： C30B15/02 , C30B17/00 , C30B29/36
摘要： Provided are an apparatus and a method for growing a silicon carbide single crystal by solution growth. The apparatus for growing a silicon carbide single crystal includes: a reaction chamber that is in a predetermined pressure state; a crucible that is provided in the reaction chamber, includes silicon (Si) or silicon carbide (SiC) powders or a mixture thereof charged therein, includes a silicon carbide seed provided at an upper portion of an inner side thereof and growing a silicon carbide and a seed connection bar extended from the silicon carbide seed, and is made of a graphite material; and a heating element that heats the crucible. An inner portion of the crucible is provided with a cylindrical assisting tool having a plurality of pores formed at least at a side thereof and made of the graphite material.
摘要翻译：提供了一种通过溶液生长生长碳化硅单晶的装置和方法。用于生长碳化硅单晶的装置包括：处于预定压力状态的反应室; 设置在反应室中的坩埚包括硅（Si）或碳化硅（SiC）粉末或其中填充的混合物，包括在其内侧的上部设置的碳化硅晶粒并生长碳化硅，从碳化硅种子延伸的种子连接杆，并由石墨材料制成; 以及加热坩埚的加热元件。坩埚的内部设置有圆柱形辅助工具，其具有至少在其一侧形成并由石墨材料制成的多个孔。

5. 发明申请

WO2011068364A3 INDICATOR METHOD AND APPARATUS USING ELECTROMAGNETIC PROPERTIES 审中-公开
标题翻译：指示器方法和使用电磁特性的装置
公开(公告)号：WO2011068364A3
公开(公告)日：2011-10-27
申请号：PCT/KR2010008571
申请日：2010-12-02
申请人： NANOBRICK CO LTD , JOO JAE HYUN , HONG SUNG WAN
发明人： JOO JAE HYUN , HONG SUNG WAN
IPC分类号： G02F1/167
CPC分类号： G02F1/167 , G09F9/372 , G09F9/375
摘要： Disclosed is a method and apparatus which use an indicator having electromagnetic properties. The indicating method using electromagnetic properties according to the present invention is characterized by a plurality of particles which have both electric charge and magnetic properties and which indicate a first color when dispersed in a solvent indicating a second color. At least one color of either the first and / or the second color is indicated, when at least one of either the electric charge and / or magnetic properties induces the indication of at least one color, which is determined by the direction in which the particles move, which, in turn, is determined by the amount of magnetic force or electric charge applied according to preset calibration.
摘要翻译：公开了使用具有电磁特性的指示器的方法和装置。根据本发明的使用电磁特性的指示方法的特征在于多个同时具有电荷和磁性的颗粒，并且当分散在指示第二颜色的溶剂中时指示第一颜色。当电荷和/或磁性中的至少一个引起至少一种颜色的指示时，指示第一颜色和/或第二颜色中的至少一种颜色，该颜色由粒子的方向移动，这又取决于根据预设标定施加的磁力量或电荷量。

6. 发明申请

WO2012053782A2 PROCESS FOR GROWING SILICON CARBIDE SINGLE CRYSTAL AND DEVICE FOR THE SAME 审中-公开
标题翻译：用于生产碳化硅单晶和其相同装置的方法
公开(公告)号：WO2012053782A2
公开(公告)日：2012-04-26
申请号：PCT/KR2011/007701
申请日：2011-10-17
申请人： SK INNOVATION CO., LTD. , HONG, Sung Wan , KIM, Young Shol
发明人： HONG, Sung Wan , KIM, Young Shol
IPC分类号： C30B29/36 , C30B19/10 , H01L21/208
CPC分类号： C30B15/002 , C30B11/001 , C30B15/02 , C30B17/00 , C30B19/02 , C30B29/36 , H01L21/02529 , H01L21/02628 , Y10T117/1032 , Y10T117/1056
摘要： Provided is a method for manufacturing a silicon carbide single crystal using a solution process including coming a seed crystal substrate for growing silicon carbide into contact with a Si-C alloy solution including at least one additive metal and growing the silicon carbide single crystal on a seed crystal for growing silicon carbide, including feeding a silicon feedstock into an alloy solution when a molar ratio of Si and the additive metal is lower than an initially set value as the reaction progresses. The method increases a crystal growth speed, maintains the growth speed, and prevents the growth from unwillingly stopping when the silicon carbide single crystal is manufactured using a solution growth process.
摘要翻译：提供了一种使用溶液工艺制造碳化硅单晶的方法，该方法包括将用于生长碳化硅的晶种基底与包含至少一种添加金属的Si-C合金溶液接触并在种子上生长碳化硅单晶用于生长碳化硅的晶体，包括当反应进行时，当Si和添加金属的摩尔比低于初始设定值时，将硅原料进料到合金溶液中。该方法提高晶体生长速度，保持生长速度，并且当使用溶液生长工艺制造碳化硅单晶时，防止生长不期望地停止。

7. 发明申请

WO2011016681A2 PRINTING MEDIUM, PRINTING METHOD, AND PRINTING APPARATUS USING PHOTONIC CRYSTAL CHARACTERISTIC 审中-公开
标题翻译：印刷介质，印刷方法及印刷设备的光子晶体特性
公开(公告)号：WO2011016681A2
公开(公告)日：2011-02-10
申请号：PCT/KR2010005136
申请日：2010-08-05
申请人： NANOBRICK CO LTD , JOO JAE HYUN , HONG SUNG WAN , GO DA HYEON , KIM KWANG SU
发明人： JOO JAE HYUN , HONG SUNG WAN , GO DA HYEON , KIM KWANG SU
IPC分类号： B41M5/36
CPC分类号： G02F1/167 , B41M5/20 , G02B1/005 , G02F1/21 , G02F2001/1678 , G02F2202/32 , G03G15/6597 , G03G2215/00518
摘要： The present invention provides a printing medium, a printing method, and a printing apparatus using a photonic crystal characteristic. According to the present invention, the printing medium using the photonic crystal characteristic comprises a medium in which a plurality of particles having electric charges are distributed, wherein the intervals between the particles are controlled as a result of at least one of electric fields and magnetic fields are applied to the medium, and the intervals between the particles are fixed as the energy is applied to the medium.
摘要翻译：本发明提供使用光子晶体特性的打印介质，打印方法和打印设备。根据本发明，使用光子晶体特性的印刷介质包括其中分布有多个具有电荷的粒子的介质，其中由于电场和磁场中的至少一个而控制粒子之间的间隔施加到介质上，并且随着能量施加到介质上，颗粒之间的间隔被固定。

8. 发明申请

WO2013002539A2 APPARATUS AND METHOD FOR GROWING SILICON CARBIDE SINGLE CRYSTAL 审中-公开
标题翻译：用于生产碳化硅单晶的装置和方法
公开(公告)号：WO2013002539A2
公开(公告)日：2013-01-03
申请号：PCT/KR2012/005045
申请日：2012-06-26
申请人： SK INNOVATION CO.,LTD. , KIM, Young Shol , BAE, Sun Hyuk , HONG, Sung Wan
发明人： KIM, Young Shol , BAE, Sun Hyuk , HONG, Sung Wan
CPC分类号： C30B9/06 , C30B29/36
摘要： Provided are an apparatus and a method for growing a silicon carbide single crystal by solution growth. The apparatus for growing a silicon carbide single crystal includes: a reaction chamber that is in a predetermined pressure state; a crucible that is provided in the reaction chamber, includes silicon (Si) or silicon carbide (SiC) powders or a mixture thereof charged therein, includes a silicon carbide seed provided at an upper portion of an inner side thereof and growing a silicon carbide and a seed connection bar extended from the silicon carbide seed, and is made of a graphite material; and a heating element that heats the crucible. An inner portion of the crucible is provided with at least one protrusion jaws, at least some or all of which are formed along an inner peripheral surface of the crucible, wherein the protrusion jaw is made of the graphite material.
摘要翻译：提供了一种通过溶液生长生长碳化硅单晶的装置和方法。用于生长碳化硅单晶的装置包括：处于预定压力状态的反应室; 设置在反应室中的坩埚包括硅（Si）或碳化硅（SiC）粉末或其中填充的混合物，包括在其内侧的上部设置的碳化硅晶粒并生长碳化硅，从碳化硅种子延伸的种子连接杆，并由石墨材料制成; 以及加热坩埚的加热元件。坩埚的内部具有至少一个突出爪，其至少一部分或全部沿着坩埚的内周面形成，其中突出爪由石墨材料制成。

9. 发明申请

WO2012053782A3 PROCESS FOR GROWING SILICON CARBIDE SINGLE CRYSTAL AND DEVICE FOR THE SAME 审中-公开
标题翻译：生长碳化硅单晶的方法及其装置
公开(公告)号：WO2012053782A3
公开(公告)日：2012-07-19
申请号：PCT/KR2011007701
申请日：2011-10-17
申请人： SK INNOVATION CO LTD , HONG SUNG WAN , KIM YOUNG SHOL
发明人： HONG SUNG WAN , KIM YOUNG SHOL
IPC分类号： C30B29/36 , C30B19/10 , H01L21/208
CPC分类号： C30B15/002 , C30B11/001 , C30B15/02 , C30B17/00 , C30B19/02 , C30B29/36 , H01L21/02529 , H01L21/02628 , Y10T117/1032 , Y10T117/1056
摘要： Provided is a method for manufacturing a silicon carbide single crystal using a solution process including coming a seed crystal substrate for growing silicon carbide into contact with a Si-C alloy solution including at least one additive metal and growing the silicon carbide single crystal on a seed crystal for growing silicon carbide, including feeding a silicon feedstock into an alloy solution when a molar ratio of Si and the additive metal is lower than an initially set value as the reaction progresses. The method increases a crystal growth speed, maintains the growth speed, and prevents the growth from unwillingly stopping when the silicon carbide single crystal is manufactured using a solution growth process.
摘要翻译：本发明提供一种使用溶液法制造碳化硅单晶的方法，该方法包括：使用于生长碳化硅的籽晶衬底与包含至少一种添加金属的Si-C合金溶液接触，并在该籽晶上生长该碳化硅单晶包括在反应进行时当Si和添加金属的摩尔比低于初始设定值时将硅原料供给到合金溶液中。当使用溶液生长工艺制造碳化硅单晶时，该方法增加晶体生长速度，保持生长速度，并且防止生长不希望地停止。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式