专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2012047945A2 WEAR RESISTANT COATING, ARTICLE, AND METHOD 审中-公开
标题翻译：耐磨涂层，文章和方法
公开(公告)号：WO2012047945A2
公开(公告)日：2012-04-12
申请号：PCT/US2011054835
申请日：2011-10-05
申请人： SILCOTEK CORP , SMITH DAVID A , MATTZELA JAMES B , SILVIS PAUL H , BARONE GARY A , HIGGINS MARTIN E
发明人： SMITH DAVID A , MATTZELA JAMES B , SILVIS PAUL H , BARONE GARY A , HIGGINS MARTIN E
IPC分类号： C23C16/02
CPC分类号： C09D5/00 , C23C16/0272 , C23C16/18 , C23C16/30 , C23C16/401 , C23C16/56 , C23C30/00 , Y10T428/265 , Y10T428/31612 , Y10T428/31663
摘要： A wear coating is disclosed that includes a layer treated by a trifunctional organosilane. An article is also disclosed, the article having a surface to which the wear coating is applied. A method of applying the wear coating is also disclosed. In some embodiments, the organosilane is trimethylsilane and the wear coating is applied by chemical vapor deposition, followed by heat treating the wear coating in the presence of the trimethylsilane.
摘要翻译：公开了一种耐磨涂层，其包括由三官能有机硅烷处理的层。还公开了一种制品，其具有施加耐磨涂层的表面。还公开了施加耐磨涂层的方法。在一些实施方案中，有机硅烷是三甲基硅烷，并且通过化学气相沉积施加耐磨涂层，然后在三甲基硅烷存在下对耐磨涂层进行热处理。

2. 发明申请

WO2004079031A3 CHEMICAL VAPOR DEPOSITION OF SILICON ON TO SUBSTRATES 审中-公开
标题翻译：化学蒸气沉积到基底上
公开(公告)号：WO2004079031A3
公开(公告)日：2004-12-16
申请号：PCT/US2004006764
申请日：2004-03-05
申请人： RESTEK CORP , SMITH DAVID ABBOTT , BARONE GARY A , HIGGINS MARTIN E , KENDALL BRUCE R F , LAVRICH DAVID J
发明人： SMITH DAVID ABBOTT , BARONE GARY A , HIGGINS MARTIN E , KENDALL BRUCE R F , LAVRICH DAVID J
IPC分类号： C23C16/24 , C23C16/44 , C23C16/455 , B32B9/04 , C23C8/02
CPC分类号： C23C16/4408 , B32B9/04 , C09D1/00 , C09D5/08 , C09D5/084 , C23C16/24 , C23C16/4401 , C23C16/45523
摘要： A method of passivating the surface of a substrate to protect the surface against corrosion, the surface effects on a vacuum environment, or both. The substrate surface is placed in a treatment environment and is first dehydrated and then the environment is evacuated. A silicon hydride gas is introduced into the treatment environment, which may be heated prior to the introduction of the gas. The substrate and silicon hydride gas contained therein are heated, if the treatment environment was not already heated prior to the introduction of the gas and pressurized to decompose the gas. A layer of silicon is deposited on the substrate surface. The duration of the silicon depositing step is controlled to prevent the formation of silicon dust in the treatment environment. The substrate is then cooled and held at a cooled temperature to optimize surface conditions for subsequent depositions, and the treatment environment is purged with an inert gas to remove the silicon hydride gas. The substrate is cycled through the silicon depositing step until the surface of the substrate is covered with a layer of silicon. The treatment environment is then evacuated and the substrate cooled to room temperature.
摘要翻译：钝化基板表面以保护表面免受腐蚀，表面对真空环境的影响或两者的方法。将基材表面放置在处理环境中，并首先脱水，然后将环境抽真空。将氢化硅气体引入处理环境中，其可以在引入气体之前被加热。如果在引入气体之前处理环境未被加热并加压以分解气体，则其中包含的基板和氢化硅气体被加热。在衬底表面上沉积一层硅。控制硅沉积步骤的持续时间以防止在处理环境中形成硅粉尘。然后将基底冷却并保持在冷却的温度下，以优化随后沉积的表面条件，并且用惰性气体吹扫处理环境以除去氢化硅气体。衬底通过硅沉积步骤循环，直到衬底的表面被一层硅覆盖。然后将处理环境抽真空并将基材冷却至室温。

3. 发明申请

WO2012047945A3 WEAR RESISTANT COATING, ARTICLE, AND METHOD 审中-公开
公开(公告)号：WO2012047945A3
公开(公告)日：2012-04-12
申请号：PCT/US2011/054835
申请日：2011-10-05
申请人： SILCOTEK CORP. , SMITH, David A. , MATTZELA, James B. , SILVIS, Paul H. , BARONE, Gary A. , HIGGINS, Martin E.
发明人： SMITH, David A. , MATTZELA, James B. , SILVIS, Paul H. , BARONE, Gary A. , HIGGINS, Martin E.
IPC分类号： C23C16/02 , C23C16/18 , C23C16/40 , C23C16/56 , C23C30/00 , C23C16/30
摘要： A wear coating is disclosed that includes a layer treated by a trifunctional organosilane. An article is also disclosed, the article having a surface to which the wear coating is applied. A method of applying the wear coating is also disclosed. In some embodiments, the organosilane is trimethylsilane and the wear coating is applied by chemical vapor deposition, followed by heat treating the wear coating in the presence of the trimethylsilane.

4. 发明申请

WO2004079031A2 METHOD FOR CHEMICAL VAPOR DEPOSITION OF SILICON ON TO SUBSTRATES FOR USE IN CORROSIVE AND VACUUM ENVIRONMENTS 审中-公开
标题翻译：用于腐蚀和真空环境的硅衬底的化学气相沉积方法
公开(公告)号：WO2004079031A2
公开(公告)日：2004-09-16
申请号：PCT/US2004/006764
申请日：2004-03-05
申请人： RESTEK CORPORATION , SMITH, David, Abbott , BARONE, Gary, A. , HIGGINS, Martin, E. , KENDALL, Bruce, R., F. , LAVRICH, David, J.
发明人： SMITH, David, Abbott , BARONE, Gary, A. , HIGGINS, Martin, E. , KENDALL, Bruce, R., F. , LAVRICH, David, J.
IPC分类号： C23C
CPC分类号： C23C16/4408 , B32B9/04 , C09D1/00 , C09D5/08 , C09D5/084 , C23C16/24 , C23C16/4401 , C23C16/45523
摘要： A method of passivating the surface of a substrate to protect the surface against corrosion, the surface effects on a vacuum environment, or both. The substrate surface is placed in a treatment environment and is first dehydrated and then the environment is evacuated. A silicon hydride gas is introduced into the treatment environment, which may be heated prior to the introduction of the gas. The substrate and silicon hydride gas contained therein are heated, if the treatment environment was not already heated prior to the introduction of the gas and pressurized to decompose the gas. A layer of silicon is deposited on the substrate surface. The duration of the silicon depositing step is controlled to prevent the formation of silicon dust in the treatment environment. The substrate is then cooled and held at a cooled temperature to optimize surface conditions for subsequent depositions, and the treatment environment is purged with an inert gas to remove the silicon hydride gas. The substrate is cycled through the silicon depositing step until the surface of the substrate is covered with a layer of silicon. The treatment environment is then evacuated and the substrate cooled to room temperature.
摘要翻译：钝化基板表面以保护表面免受腐蚀，表面对真空环境的影响或两者的方法。将基材表面放置在处理环境中，并首先脱水，然后将环境抽真空。将氢化硅气体引入处理环境中，其可以在引入气体之前被加热。如果在引入气体之前处理环境未被加热并加压以分解气体，则其中包含的基板和氢化硅气体被加热。在衬底表面上沉积一层硅。控制硅沉积步骤的持续时间以防止在处理环境中形成硅粉尘。然后将基底冷却并保持在冷却的温度下，以优化随后沉积的表面条件，并且用惰性气体吹扫处理环境以除去氢化硅气体。衬底通过硅沉积步骤循环，直到衬底的表面被一层硅覆盖。然后将处理环境抽真空并将基材冷却至室温。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式