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1. 发明申请

WO2010077728A3 DENSIFICATION PROCESS FOR TITANIUM NITRIDE LAYER FOR SUBMICRON APPLICATIONS 审中-公开
标题翻译：氮化钛纳米层应用的渗透过程
公开(公告)号：WO2010077728A3
公开(公告)日：2010-09-10
申请号：PCT/US2009067312
申请日：2009-12-09
申请人： APPLIED MATERIALS INC , RITCHIE ALAN ALEXANDER , HASSAN MOHD FADZLI ANWAR
发明人： RITCHIE ALAN ALEXANDER , HASSAN MOHD FADZLI ANWAR
IPC分类号： H01L21/205 , H01L21/28
CPC分类号： H01L21/76843 , C23C16/34 , C23C16/56 , H01L21/28556 , H01L21/76846 , H01L21/76856 , H01L21/76862
摘要： Embodiments of the present invention provide methods of forming and densifying a titanium nitride barrier layer. The densification process is performed at a relatively low RF plasma power and high nitrogen to hydrogen ratio so as to provide a substantially titanium rich titanium nitride barrier layer. In one embodiment, a method for forming a titanium nitride barrier layer on a substrate includes depositing a titanium nitride layer on the substrate by a metal-organic chemical vapor deposition process, and performing a plasma treatment process on the deposited titanium nitride layer, wherein the plasma treatment process operates to densify the deposited titanium nitride layer, resulting in a densified titanium nitride layer, wherein the plasma treatment process further comprises supplying a plasma gas mixture containing a nitrogen gas to hydrogen gas ratio between about 20:1 and about 3:1, and applying less than about 500 Watts RF power to the plasma gas mixture.
摘要翻译：本发明的实施例提供了形成和致密化氮化钛阻挡层的方法。致密化过程以相对较低的RF等离子体功率和高的氮与氢比进行，从而提供基本上富钛的氮化钛阻挡层。在一个实施例中，在衬底上形成氮化钛阻挡层的方法包括通过金属 - 有机化学气相沉积工艺在衬底上沉积氮化钛层，并对沉积的氮化钛层进行等离子体处理工艺，其中等离子体处理工艺用于致密化沉积的氮化钛层，产生致密的氮化钛层，其中等离子体处理工艺进一步包括将含有氮气的等离子体气体混合物与约20:1至约3:1的氢气比并且向等离子体气体混合物施加小于约500瓦的RF功率。

2. 发明申请

WO2011047186A3 METHOD AND APPARATUS FOR IMPROVING PHOTOVOLTAIC EFFICIENCY 审中-公开
公开(公告)号：WO2011047186A3
公开(公告)日：2011-04-21
申请号：PCT/US2010/052719
申请日：2010-10-14
申请人： APPLIED MATERIALS, INC. , LE, Hien-Minh, Huu , HASSAN, Mohd, Fadzli, Anwar , TANNER, David , WANG, Dapeng
发明人： LE, Hien-Minh, Huu , HASSAN, Mohd, Fadzli, Anwar , TANNER, David , WANG, Dapeng
IPC分类号： H01L31/042
摘要： A method and apparatus for improving efficiency of photovoltaic cells by improving light capture between the photoelectric unit and back reflector is provided. A transition layer is formed at the interface between the photoelectric unit and transmitting conducting layer of the back reflector by adding oxygen, nitrogen, or both to the surface of the photoelectric unit or the interface between the photoelectric unit and the transmitting conducting layer. The transition layer may comprise silicon, oxygen, or nitrogen, and may be silicon oxide, silicon nitride, metal oxide with excess oxygen, metal oxide with nitrogen, or any combination thereof, including bilayers and multi-layers. The sputtering process for forming the transmitting conducting layer may feature at least one of nitrogen and excess oxygen, and may be performed by sputtering at low power, followed by an operation to form the rest of the transmitting conductive layer.

3. 发明申请

WO2011047186A2 METHOD AND APPARATUS FOR IMPROVING PHOTOVOLTAIC EFFICIENCY 审中-公开
标题翻译：提高光伏效率的方法和设备
公开(公告)号：WO2011047186A2
公开(公告)日：2011-04-21
申请号：PCT/US2010052719
申请日：2010-10-14
申请人： APPLIED MATERIALS INC , LE HIEN-MINH HUU , HASSAN MOHD FADZLI ANWAR , TANNER DAVID , WANG DAPENG
发明人： LE HIEN-MINH HUU , HASSAN MOHD FADZLI ANWAR , TANNER DAVID , WANG DAPENG
IPC分类号： H01L31/042
CPC分类号： H01L31/022466 , C23C14/0084 , C23C14/027 , C23C14/086 , H01L31/022483 , H01L31/0236 , H01L31/0368 , H01L31/03682 , H01L31/03685 , H01L31/03762 , H01L31/056 , H01L31/076 , H01L31/077 , H01L31/1804 , H01L31/182 , H01L31/1824 , H01L31/1884 , Y02E10/52 , Y02E10/545 , Y02E10/546 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A method and apparatus for improving efficiency of photovoltaic cells by improving light capture between the photoelectric unit and back reflector is provided. A transition layer is formed at the interface between the photoelectric unit and transmitting conducting layer of the back reflector by adding oxygen, nitrogen, or both to the surface of the photoelectric unit or the interface between the photoelectric unit and the transmitting conducting layer. The transition layer may comprise silicon, oxygen, or nitrogen, and may be silicon oxide, silicon nitride, metal oxide with excess oxygen, metal oxide with nitrogen, or any combination thereof, including bilayers and multi-layers. The sputtering process for forming the transmitting conducting layer may feature at least one of nitrogen and excess oxygen, and may be performed by sputtering at low power, followed by an operation to form the rest of the transmitting conductive layer.
摘要翻译：提供了通过改进光电单元和后反射器之间的光捕获来提高光伏电池效率的方法和设备。通过向光电单元表面或光电单元与发射导电层之间的界面添加氧，氮或两者，在光电单元与背反射器的透射导电层之间的界面处形成过渡层。过渡层可以包括硅，氧或氮，并且可以是氧化硅，氮化硅，具有过量氧的金属氧化物，具有氮的金属氧化物或其任何组合，包括双层和多层。用于形成透射导电层的溅射工艺可以具有氮和过量氧中的至少一种，并且可以通过低功率溅射来执行，随后进行形成透射导电层的其余部分的操作。

4. 发明申请

WO2012006130A3 HIGH PERFORMANCE MULTI-LAYER BACK CONTACT STACK FOR SILICON SOLAR CELLS 审中-公开
公开(公告)号：WO2012006130A3
公开(公告)日：2012-01-12
申请号：PCT/US2011/042259
申请日：2011-06-29
申请人： APPLIED MATERIALS, INC. , HASSAN, Mohd Fadzli Anwar , LE, Hien-Minh Huu
发明人： HASSAN, Mohd Fadzli Anwar , LE, Hien-Minh Huu
IPC分类号： H01L31/042 , H01L31/075 , H01L31/18
摘要： High performance multi-layer back contact stacks for silicon solar cells and methods for manufacture are disclosed. Photovoltaic modules incorporating high performance multi-layer back contact stacks and methods for making the same are also described.

5. 发明申请

WO2012006130A2 HIGH PERFORMANCE MULTI-LAYER BACK CONTACT STACK FOR SILICON SOLAR CELLS 审中-公开
标题翻译：高性能多层回覆硅胶太阳能电池组件
公开(公告)号：WO2012006130A2
公开(公告)日：2012-01-12
申请号：PCT/US2011042259
申请日：2011-06-29
申请人： APPLIED MATERIALS INC , HASSAN MOHD FADZLI ANWAR , LE HIEN-MINH HUU
发明人： HASSAN MOHD FADZLI ANWAR , LE HIEN-MINH HUU
IPC分类号： H01L31/042 , H01L31/075 , H01L31/18
CPC分类号： H01L31/0201 , H01L31/02167 , H01L31/046 , H01L31/0465 , H01L31/056 , Y02E10/52
摘要： High performance multi-layer back contact stacks for silicon solar cells and methods for manufacture are disclosed. Photovoltaic modules incorporating high performance multi-layer back contact stacks and methods for making the same are also described.
摘要翻译：公开了用于硅太阳能电池的高性能多层背接触堆叠和制造方法。还描述了包含高性能多层背接触堆叠的光伏模块及其制造方法。

6. 发明申请

WO2010077728A2 DENSIFICATION PROCESS FOR TITANIUM NITRIDE LAYER FOR SUBMICRON APPLICATIONS 审中-公开
标题翻译：用于亚微米应用的氮化钛层的致密化工艺
公开(公告)号：WO2010077728A2
公开(公告)日：2010-07-08
申请号：PCT/US2009/067312
申请日：2009-12-09
申请人： APPLIED MATERIALS, INC. , RITCHIE, Alan Alexander , HASSAN, Mohd Fadzli Anwar
发明人： RITCHIE, Alan Alexander , HASSAN, Mohd Fadzli Anwar
IPC分类号： H01L21/205 , H01L21/28
CPC分类号： H01L21/76843 , C23C16/34 , C23C16/56 , H01L21/28556 , H01L21/76846 , H01L21/76856 , H01L21/76862
摘要： Embodiments of the present invention provide methods of forming and densifying a titanium nitride barrier layer. The densification process is performed at a relatively low RF plasma power and high nitrogen to hydrogen ratio so as to provide a substantially titanium rich titanium nitride barrier layer. In one embodiment, a method for forming a titanium nitride barrier layer on a substrate includes depositing a titanium nitride layer on the substrate by a metal-organic chemical vapor deposition process, and performing a plasma treatment process on the deposited titanium nitride layer, wherein the plasma treatment process operates to densify the deposited titanium nitride layer, resulting in a densified titanium nitride layer, wherein the plasma treatment process further comprises supplying a plasma gas mixture containing a nitrogen gas to hydrogen gas ratio between about 20:1 and about 3:1, and applying less than about 500 Watts RF power to the plasma gas mixture.
摘要翻译：本发明的实施例提供了形成和致密化氮化钛阻挡层的方法。致密化过程在相对较低的RF等离子体功率和高氮/氢比下进行，从而提供基本上富含钛的氮化钛阻挡层。在一个实施例中，用于在衬底上形成氮化钛阻挡层的方法包括通过金属有机化学气相沉积工艺在衬底上沉积氮化钛层，并且在沉积的氮化钛层上执行等离子体处理工艺，等离子体处理工艺操作致密化沉积的氮化钛层，导致致密化的氮化钛层，其中等离子体处理工艺进一步包括提供包含约20:1至约3:1之间的氮气与氢气比率的等离子体气体混合物，并且向等离子体气体混合物施加小于约500瓦的RF功率。

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