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1. 发明申请

WO2006036604A1 HIGH OUTPUT GROUP III NITRIDE LIGHT EMITTING DIODES 审中-公开
标题翻译：高输出组III氮化物发光二极管
公开(公告)号：WO2006036604A1
公开(公告)日：2006-04-06
申请号：PCT/US2005/033239
申请日：2005-09-15
申请人： CREE, INC. , EDMOND, John, Adam , BERGMANN, Michael, John , EMERSON, David, Todd , HABERERN, Kevin, Ward
发明人： EDMOND, John, Adam , BERGMANN, Michael, John , EMERSON, David, Todd , HABERERN, Kevin, Ward
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/007 , H01L33/325
摘要： A light emitting diode is disclosed that includes a silicon carbide substrate and a light emitting structure formed from the Group III nitride material system on the substrate. The diode has an area greater than 100,000 square microns and has a radiant flux at 20 milliamps current of at least 29 milliwatts at its dominant wavelength between 390 and 540 nanometers.
摘要翻译：公开了一种发光二极管，其包括碳化硅衬底和由衬底上的III族氮化物材料体系形成的发光结构。该二极管具有大于100,000平方微米的面积，其在20毫安电流下的辐射通量为至少29毫瓦，其主波长为390至540纳米。

2. 发明申请

WO2011019510A1 LIGHT EMITTING DIODES INCLUDING INTEGRATED BACKSIDE REFLECTOR AND DIE ATTACH 审中-公开
标题翻译：发光二极管，包括集成的反射器和DIE附件
公开(公告)号：WO2011019510A1
公开(公告)日：2011-02-17
申请号：PCT/US2010/043615
申请日：2010-07-29
申请人： CREE, INC. , BERGMANN, Michael, John , HABERERN, Kevin, Ward , WILLIAMS, Bradley, E. , PARKER, Winston, T. , PUN, Arthur, Fong-Yuen , SUH, Doowon , DONOFRIO, Matthew
发明人： BERGMANN, Michael, John , HABERERN, Kevin, Ward , WILLIAMS, Bradley, E. , PARKER, Winston, T. , PUN, Arthur, Fong-Yuen , SUH, Doowon , DONOFRIO, Matthew
IPC分类号： H01L33/46
CPC分类号： H01L33/46 , H01L33/007 , H01L33/20 , H01L2224/73265
摘要： A light emitting diode includes a silicon carbide substrate (120) having first (120A) and second (120B) opposing faces, a diode region (110) on the first face, anode (112) and cathode (114) contacts on the diode region opposite the silicon carbide substrate and a hybrid reflector (132, 134) on the silicon carbide substrate opposite the diode region. The hybrid reflector includes a transparent layer (132) having an index of refraction that is lower than the index of the silicon carbide substrate, and a reflective layer (232) on the transparent layer, opposite the substrate. A die attach layer may be provided on the hybrid reflector, opposite the silicon carbide substrate. A barrier layer (432) may be provided between the hybrid reflector and the die attach layer.
摘要翻译：发光二极管包括具有第一（120A）和第二（120B）相对面的碳化硅衬底（120），第一面上的二极管区（110），阳极（112）和阴极（114）在二极管区域与碳化硅衬底相对，并且在与碳化硅衬底相对的二极管区域上的混合反射器（132,134）。混合反射器包括具有低于碳化硅衬底的折射率的折射率的透明层（132）和与衬底相对的透明层上的反射层（232）。可以在混合反射器上设置芯片附着层，与碳化硅衬底相对。可以在混合反射器和管芯附着层之间设置阻挡层（432）。

3. 发明申请

WO0127980A9 SINGLE STEP PENDEO- AND LATERAL EPITAXIAL OVERGROWTH OF GROUP III-NITRIDE LAYERS 审中-公开
标题翻译：第III组氮化物层的单步和侧向外延生长
公开(公告)号：WO0127980A9
公开(公告)日：2002-09-26
申请号：PCT/US0028056
申请日：2000-10-11
申请人： CREE INC , KONG HUA-SHUANG , EDMOND JOHN ADAM , HABERERN KEVIN WARD , EMERSON DAVID TODD
发明人： KONG HUA-SHUANG , EDMOND JOHN ADAM , HABERERN KEVIN WARD , EMERSON DAVID TODD
IPC分类号： H01L21/20 , H01L21/205 , H01S5/02
CPC分类号： H01L21/0265 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01S5/32341 , H01S2304/12
摘要： A method of fabricating a gallium nitride-based semiconductor structure on a substrate includes the steps of forming a mask (14) having at least one opening (6) therein directly on the substrate (18), growing a buffer layer (12) through the opening, and growing a layer of gallium nitride (20) upwardly from the buffer layer and laterally across the mask. During growth of the gallium nitride from the mask, the vertical and horizontal growth rates of the gallium nitride layer are maintained at rates sufficient to prevent polycrystalline material (30) nucleating on said mask from interrupting the lateral growth of the gallium nitride layer. In an alternative embodiment, the method includes forming at least one raised portion (15) defining adjacent trenches (18) in the substrate and forming a mask (14) on the substrate (10), the mask having at least one opening (16) over the upper surface of the raised portion. A buffer layer (12) may be grown from the upper surface of the raised portion. The gallium nitride layer (26) is then grown laterally by pendeoepitaxy over the trenches.
摘要翻译：在衬底上制造氮化镓基半导体结构的方法包括以下步骤：在衬底（18）上直接形成具有至少一个开口（6）的掩模（14），通过该衬底生长缓冲层（12）打开并从缓冲层向上生长一层氮化镓（20）并横向穿过掩模。在从掩模生长氮化镓期间，氮化镓层的垂直和水平生长速率保持在足以防止在所述掩模上成核的多晶材料（30）中断氮化镓层的横向生长的速率。在替代实施例中，该方法包括形成在衬底中限定相邻沟槽（18）的至少一个凸起部分（15），并在衬底（10）上形成掩模（14），所述掩模具有至少一个开口（16）在凸起部分的上表面上。缓冲层（12）可以从凸起部分的上表面生长。然后通过在沟槽上的外延生长横向生长氮化镓层（26）。

4. 发明申请

WO2001027980A1 SINGLE STEP PENDEO- AND LATERAL EPITAXIAL OVERGROWTH OF GROUP III-NITRIDE LAYERS 审中-公开
标题翻译：第III组氮化物层的单步和侧向外延生长
公开(公告)号：WO2001027980A1
公开(公告)日：2001-04-19
申请号：PCT/US2000/028056
申请日：2000-10-11
申请人： CREE, INC. , KONG, Hua-shuang , EDMOND, John, Adam , HABERERN, Kevin, Ward , EMERSON, David, Todd
发明人： KONG, Hua-shuang , EDMOND, John, Adam , HABERERN, Kevin, Ward , EMERSON, David, Todd
IPC分类号： H01L21/20
CPC分类号： H01L21/0265 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01S5/32341 , H01S2304/12
摘要： A method of fabricating a gallium nitride-based semiconductor structure on a substrate includes the steps of forming a mask (14) having at least one opening (6) therein directly on the substrate (18), growing a buffer layer (12) through the opening, and growing a layer of gallium nitride (20) upwardly from the buffer layer and laterally across the mask. During growth of the gallium nitride from the mask, the vertical and horizontal growth rates of the gallium nitride layer are maintained at rates sufficient to prevent polycrystalline material (30) nucleating on said mask from interrupting the lateral growth of the gallium nitride layer. In an alternative embodiment, the method includes forming at least one raised portion (15) defining adjacent trenches (18) in the substrate and forming a mask (14) on the substrate (10), the mask having at least one opening (16) over the upper surface of the raised portion. A buffer layer (12) may be grown from the upper surface of the raised portion. The gallium nitride layer (26) is then grown laterally by pendeoepitaxy over the trenches.
摘要翻译：在衬底上制造氮化镓基半导体结构的方法包括以下步骤：在衬底（18）上直接形成具有至少一个开口（6）的掩模（14），通过该衬底生长缓冲层（12）打开并从缓冲层向上生长一层氮化镓（20）并横向穿过掩模。在从掩模生长氮化镓期间，氮化镓层的垂直和水平生长速率保持在足以防止在所述掩模上成核的多晶材料（30）中断氮化镓层的横向生长的速率。在替代实施例中，该方法包括形成在衬底中限定相邻沟槽（18）的至少一个凸起部分（15），并在衬底（10）上形成掩模（14），该掩模具有至少一个开口（16）在凸起部分的上表面上。缓冲层（12）可以从凸起部分的上表面生长。然后通过在沟槽上的外延生长横向生长氮化镓层（26）。

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