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1. 发明申请

US20050136645A1 Semiconductor device and fabrication method thereof 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20050136645A1
公开(公告)日：2005-06-23
申请号：US11020327
申请日：2004-12-22
申请人： Gyung-Su Cho
发明人： Gyung-Su Cho
IPC分类号： H01L21/60 , H01L21/768 , H01L23/485 , H01L23/532 , H01L21/4763
CPC分类号： H01L24/45 , H01L21/76886 , H01L23/53228 , H01L24/05 , H01L24/11 , H01L24/48 , H01L2224/0401 , H01L2224/04042 , H01L2224/05073 , H01L2224/05116 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05624 , H01L2224/05639 , H01L2224/05647 , H01L2224/13099 , H01L2224/45147 , H01L2224/48839 , H01L2224/48847 , H01L2924/00011 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2224/48824 , H01L2924/00 , H01L2224/43 , H01L2924/01006
摘要： A bonding pad of a semiconductor device and a fabrication method thereof are disclosed. A semiconductor device having a pad formed by exposing a predetermined region of a metal line formed over a semiconductor substrate includes an alloy layer formed on the metal line exposed through the pad. The alloy layer is formed from a reaction between the metal line and a metal having a melting point less than or equal to 1000° C.
摘要翻译：公开了一种半导体器件的焊盘及其制造方法。具有通过暴露形成在半导体衬底上的金属线的预定区域形成的焊盘的半导体器件包括形成在通过焊盘暴露的金属线上的合金层。合金层由金属线和熔点小于或等于1000℃的金属之间的反应形成。

2. 发明申请

US20060057947A1 Apparatus for chemical mechanical polishing 失效
公开(公告)号：US20060057947A1
公开(公告)日：2006-03-16
申请号：US11220253
申请日：2005-09-06
申请人： Gyung-Su Cho
发明人： Gyung-Su Cho
IPC分类号： B24B29/00
CPC分类号： B24B37/30
摘要： Apparatus for chemical mechanical polishing are disclosed. A disclosed apparatus includes a polishing station having a polishing pad, a gas supplier to generate pressurized gas to press a wafer toward the polishing pad, and a polishing head assembly including a planar member having a plurality of fine holes in communication with the gas supplier and a membrane to press the wafer toward the polishing pad due to the pressurized gas received through the plurality of fine holes, wherein the plurality of fine holes are arranged to rotate at different radii of rotation when the planar member rotates.

3. 发明授权

US5804509A Varying TEOS flow rate while forming intermetallic insulating layers in semiconductor devices 失效
标题翻译：在半导体器件中形成金属间绝缘层同时改变TEOS流速
公开(公告)号：US5804509A
公开(公告)日：1998-09-08
申请号：US610715
申请日：1996-03-04
申请人： Gyung-Su Cho
发明人： Gyung-Su Cho
IPC分类号： H01L21/31 , C23C16/40 , H01L21/316 , H01L21/768 , H01L23/522 , H01L00/00
CPC分类号： H01L21/02164 , C23C16/402 , H01L21/022 , H01L21/02271 , H01L21/31608 , H01L21/76801
摘要： Method of forming intermetallic insulating layers in semiconductor devices are disclosed, which not only have superior adhesion and homogeneous step coverage but also prevent the generation of voids due to the penetration of moisture. According to the method, metal interconnects are, first formed on the semiconductor substrate. Thereafter, a first insulating layer is formed to a thickness capable of sufficiently filling the spaces between the metal interconnects by reacting Tetraethylorthosilicate(TEOS) gas of a predetermined flow rate with O.sub.3 gas of a predetermined density in a CVD furnace. Next, a second insulating layer of a predetermined thickness is formed on the first insulating layer using the same furnace but by changing only the flow rate of TEOS.
摘要翻译：公开了在半导体器件中形成金属间绝缘层的方法，其不仅具有优异的粘合力和均匀的台阶覆盖度，而且还防止由于水分渗透而产生空隙。根据该方法，首先在半导体衬底上形成金属互连。此后，通过在CVD炉中反应预定流速的四乙基原硅酸盐（TEOS）气体和预定浓度的O 3气体，形成能够充分填充金属互连之间的空间的厚度的第一绝缘层。接下来，使用相同的炉在第一绝缘层上形成预定厚度的第二绝缘层，但是仅改变TEOS的流量。

4. 发明授权

US5648298A Methods for forming a contact in a semiconductor device 失效
标题翻译：在半导体器件中形成接触的方法
公开(公告)号：US5648298A
公开(公告)日：1997-07-15
申请号：US610718
申请日：1996-03-04
申请人： Gyung-Su Cho
发明人： Gyung-Su Cho
IPC分类号： H01L21/768 , H01L21/44
CPC分类号： H01L21/76802 , Y10S438/947
摘要： A method of forming a contact of a semiconductor device is disclosed. An insulating film and a metal oxide film having different etch rates are deposited on a semiconductor substrate. A photoresist pattern is formed so that the width thereof is the minimum line width which can be obtained using a conventional exposure equipment. When the insulating film and metal oxide film are etched using the photoresist pattern, since the etch rates are different from one another, a contact hole is formed than that is a finer than that at a conventional contact hole. Accordingly, a fine contact can be manufactured without purchasing additional equipment, and can be applied for semiconductor devices with higher integration.
摘要翻译：公开了一种形成半导体器件的接触的方法。具有不同蚀刻速率的绝缘膜和金属氧化物膜沉积在半导体衬底上。形成光致抗蚀剂图案，使得其宽度是可以使用常规曝光设备获得的最小线宽。当使用光致抗蚀剂图案蚀刻绝缘膜和金属氧化物膜时，由于蚀刻速率彼此不同，所以形成的接触孔比常规接触孔更细。因此，可以在不购买附加设备的情况下制造精细的接触，并且可以应用于具有更高集成度的半导体器件。

5. 发明授权

US5937326A Method for making semiconductor device having via hole 失效
标题翻译：制造具有通孔的半导体器件的方法
公开(公告)号：US5937326A
公开(公告)日：1999-08-10
申请号：US655404
申请日：1996-05-30
申请人： Gyung-Su Cho
发明人： Gyung-Su Cho
IPC分类号： H01L23/522 , H01L21/28 , H01L21/768 , H01L21/44
CPC分类号： H01L21/76885 , H01L21/76802
摘要： A method for making a semiconductor device having a via hole, includes the steps of depositing a second metal layer onto a first insulating layer formed on a semiconductor substrate where a first metal layer is formed on its lower surface, and forming a first photoresist layer. The second metal layer is then etched, using the first photoresist layer as a first etching mask, to form a metal line. Thereafter, the first photoresist layer is removed and a second photoresist layer is formed over the metal line. The metal line is etched, using the second photoresist layer as a second etching mask, to make the metal line protrude. The inventive method further includes a step for depositing a second insulating layer onto the metal line, forming a third photoresist layer on the second insulating layer, and etching the second insulating layer, using the third photoresist layer as a third etching mask, for the formation of a via hole on the metal line.
摘要翻译：一种制造具有通孔的半导体器件的方法，包括以下步骤：将第二金属层沉积在形成在其下表面上形成第一金属层的半导体衬底上形成的第一绝缘层上，形成第一光致抗蚀剂层。然后使用第一光致抗蚀剂层作为第一蚀刻掩模蚀刻第二金属层，以形成金属线。此后，去除第一光致抗蚀剂层，并在金属线上形成第二光致抗蚀剂层。金属线被蚀刻，使用第二光致抗蚀剂层作为第二蚀刻掩模，以使金属线突出。本发明的方法还包括用于在金属线上沉积第二绝缘层的步骤，在第二绝缘层上形成第三光致抗蚀剂层，并使用第三光致抗蚀剂层作为第三蚀刻掩模蚀刻第二绝缘层，用于形成的金属线上的通孔。

6. 发明授权

US07163884B2 Semiconductor device and fabrication method thereof 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US07163884B2
公开(公告)日：2007-01-16
申请号：US11020327
申请日：2004-12-22
申请人： Gyung-Su Cho
发明人： Gyung-Su Cho
IPC分类号： H01L21/44
CPC分类号： H01L24/45 , H01L21/76886 , H01L23/53228 , H01L24/05 , H01L24/11 , H01L24/48 , H01L2224/0401 , H01L2224/04042 , H01L2224/05073 , H01L2224/05116 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05624 , H01L2224/05639 , H01L2224/05647 , H01L2224/13099 , H01L2224/45147 , H01L2224/48839 , H01L2224/48847 , H01L2924/00011 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2224/48824 , H01L2924/00 , H01L2224/43 , H01L2924/01006
摘要： A bonding pad of a semiconductor device and a fabrication method thereof are disclosed. A semiconductor device having a pad formed by exposing a predetermined region of a metal line formed over a semiconductor substrate includes an alloy layer formed on the metal line exposed through the pad. The alloy layer is formed from a reaction between the metal line and a metal having a melting point less than or equal to 1000° C.
摘要翻译：公开了一种半导体器件的焊盘及其制造方法。具有通过暴露形成在半导体衬底上的金属线的预定区域形成的焊盘的半导体器件包括形成在通过焊盘暴露的金属线上的合金层。合金层由金属线和熔点小于或等于1000℃的金属之间的反应形成。

7. 发明授权

US07144308B2 Apparatus for chemical mechanical polishing 失效
标题翻译：化学机械抛光装置
公开(公告)号：US07144308B2
公开(公告)日：2006-12-05
申请号：US11220253
申请日：2005-09-06
申请人： Gyung-Su Cho
发明人： Gyung-Su Cho
IPC分类号： B24B1/00
CPC分类号： B24B37/30
摘要： Apparatus for chemical mechanical polishing are disclosed. A disclosed apparatus includes a polishing station having a polishing pad, a gas supplier to generate pressurized gas to press a wafer toward the polishing pad, and a polishing head assembly including a planar member having a plurality of fine holes in communication with the gas supplier and a membrane to press the wafer toward the polishing pad due to the pressurized gas received through the plurality of fine holes, wherein the plurality of fine holes are arranged to rotate at different radii of rotation when the planar member rotates.
摘要翻译：公开了用于化学机械抛光的装置。所公开的装置包括具有抛光垫的抛光台，用于产生加压气体以朝向抛光垫挤压晶片的气体供应器，以及包括具有与气体供应器连通的多个细孔的平面构件的抛光头组件，以及由于通过所述多个细孔容纳的加压气体，使所述晶片朝向所述研磨垫推压的膜，其中，所述多个细孔在所述平面构件旋转时被配置为以不同的旋转半径旋转。

8. 发明授权

US5713717A Multi-substrate feeder for semiconductor device manufacturing system 失效
标题翻译：用于半导体器件制造系统的多基板馈线
公开(公告)号：US5713717A
公开(公告)日：1998-02-03
申请号：US493569
申请日：1995-06-22
申请人： Gyung Su Cho
发明人： Gyung Su Cho
IPC分类号： B65G49/07 , H01L21/00 , H01L21/677 , H01L21/68 , B25J18/04
CPC分类号： H01L21/6835 , H01L21/67742
摘要： A multi-substrate feeder used in a semiconductor device manufacturing system is disclosed. The multi-substrate feeder precisely feeds a plurality of substrates to desired positions at the same time. The multi-substrate feeder has an arm support plate having a cylindrical rotor in the center thereof. A plurality of substrate feeding arms are movably placed on the arm support plate to feed a plurality of substrates at the same time. Each substrate feeding arm is mounted to the edge of the rotor at one end thereof and used for holding a substrate on the other end thereof. The feeder also has arm guide means for guiding the movement of the substrate feeding arms on the arm support plate to guide the substrate feeding direction of the feeder.
摘要翻译：公开了一种用于半导体器件制造系统的多基板馈电器。多基板馈送器同时精确地将多个基板馈送到期望的位置。多基板进料器具有在其中心具有圆柱形转子的臂支撑板。多个基板供给臂可移动地放置在臂支撑板上以同时馈送多个基板。每个基板馈送臂在其一端安装到转子的边缘，并用于在其另一端上保持基板。馈线还具有用于引导基板馈送臂在臂支撑板上的运动以引导馈送器的基板馈送方向的臂引导装置。

9. 发明授权

US5670427A Method for forming metal contacts in semiconductor devices 失效
标题翻译：在半导体器件中形成金属触点的方法
公开(公告)号：US5670427A
公开(公告)日：1997-09-23
申请号：US610716
申请日：1996-03-04
申请人： Gyung-Su Cho
发明人： Gyung-Su Cho
IPC分类号： H01L21/28 , H01L21/768 , H01L21/283 , H01L21/31
CPC分类号： H01L21/76885 , H01L21/28123 , Y10S438/947
摘要： A method for forming metal contacts in an integrated circuit, comprises the steps of: forming a first insulating layer on a silicon substrate; forming and patterning a first metal layer on the first insulating layer; forming and patterning a photoresist layer on the first insulating layer and the first metal pattern such that portions of the first insulating layer and first metal pattern are partially exposed; etching the exposed portion of the first metal pattern using the photoresist pattern to form a fine metal pattern; removing the photoresist pattern; depositing a second insulating layer on the overall surface of the structure; removing the second insulating layer to a depth until the fine metal pattern is exposed; coating a third photoresist layer on a surface of the second insulating layer and a surface of the fine metal pattern; patterning the third photoresist layer such that the surface of the fine metal pattern and portions of the surface of the second insulating layer adjacent to and on both sides of the fine metal pattern are covered; etching the second insulating layer using the third photoresist pattern to form spaces in the second insulating layer; removing the third photoresist pattern; forming a second metal layer to fill the spaces in the second insulating layer; and removing the second metal layers until a top surface of the second insulating layer is exposed to thereby form metal contacts.
摘要翻译：一种用于在集成电路中形成金属触点的方法，包括以下步骤：在硅衬底上形成第一绝缘层; 在所述第一绝缘层上形成和图案化第一金属层; 在第一绝缘层和第一金属图案上形成和图案化光致抗蚀剂层，使得第一绝缘层和第一金属图案的部分部分地露出; 使用光致抗蚀剂图案蚀刻第一金属图案的暴露部分以形成细金属图案; 去除光致抗蚀剂图案; 在所述结构的整个表面上沉积第二绝缘层; 将第二绝缘层去除一段深度，直到细金属图案曝光; 在第二绝缘层的表面和细金属图案的表面上涂覆第三光致抗蚀剂层; 图案化第三光致抗蚀剂层，使得细金属图案的表面和与金属图案相邻并且两侧的第二绝缘层的表面的部分被覆盖; 使用第三光致抗蚀剂图案蚀刻第二绝缘层，以在第二绝缘层中形成空间; 去除第三光致抗蚀剂图案; 形成第二金属层以填充所述第二绝缘层中的空间; 并且去除所述第二金属层直到所述第二绝缘层的顶表面暴露，从而形成金属接触。

10. 发明授权

US08137363B2 Electrical dermabrasion device 失效
标题翻译：电动磨皮装置
公开(公告)号：US08137363B2
公开(公告)日：2012-03-20
申请号：US11587742
申请日：2005-04-12
申请人： Gyung Su Cho
发明人： Gyung Su Cho
IPC分类号： A61B17/50
CPC分类号： A61B17/54 , A61B90/80 , A61B2017/00398 , A61B2017/00876 , A61B2017/2925 , A61B2217/005
摘要： An electrical dermabrasion device (10) for exfoliating a foot includes a hollow main body (12); an abrasion unit (32, 42) connected to the main body (12), for exfoliating the foot; and a driving unit (14, 16, 18) incorporated in a hollow portion of the main body (12), for rotating the abrasion unit (32, 42).
摘要翻译：用于剥离脚的电磨皮装置（10）包括中空主体（12）; 连接到所述主体（12）的磨损单元（32,42），用于使所述脚部剥离; 以及结合在主体（12）的中空部分中的用于旋转磨损单元（32,42）的驱动单元（14,16,18）。

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