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1. 发明授权

US08030688B2 Ohmic metal contact protection using an encapsulation layer 有权
标题翻译：欧姆接触保护使用封装层
公开(公告)号：US08030688B2
公开(公告)日：2011-10-04
申请号：US12486686
申请日：2009-06-17
申请人： Tahir Hussain , Miroslav Micovic , Paul Hashimoto , Gary Peng , Ara K. Kurdoghlian
发明人： Tahir Hussain , Miroslav Micovic , Paul Hashimoto , Gary Peng , Ara K. Kurdoghlian
IPC分类号： H01L29/778
CPC分类号： H01L29/66462 , H01L21/24 , H01L21/242 , H01L21/28587 , H01L29/2003 , H01L29/452 , H01L29/66924
摘要： A method for fabricating a semiconductor device which protects the ohmic metal contacts and the channel of the device during subsequent high temperature processing steps is explained. An encapsulation layer is used to cover the channel and ohmic metal contacts. The present invention provides a substrate on which a plurality of semiconductor layers are deposited. The semiconductor layers act as the channel of the device. The semiconductor layers are covered with an encapsulation layer. A portion of the encapsulation layer and the plurality of semiconductor layers are removed, wherein ohmic metal contacts are deposited. The ohmic metal contacts are then annealed to help reduce their resistance. The encapsulation layer ensures that the ohmic metal contacts do not migrate during the annealing step and that the channel is not harmed by the high temperatures needed during the annealing step.
摘要翻译：说明了在随后的高温处理步骤中制造保护欧姆金属触点和器件通道的半导体器件的方法。封装层用于覆盖通道和欧姆金属触点。本发明提供一种其上沉积有多个半导体层的衬底。半导体层用作器件的通道。半导体层被封装层覆盖。去除封装层和多个半导体层的一部分，其中沉积欧姆金属接触。然后将欧姆金属触点退火以帮助降低它们的电阻。封装层确保在退火步骤期间欧姆金属接触不迁移，并且该通道不会受退火步骤期间所需的高温的损害。

2. 发明申请

US20090250725A1 OHMIC METAL CONTACT PROTECTION USING AN ENCAPSULATION LAYER 有权
标题翻译： OHMIC金属接触保护使用封装层
公开(公告)号：US20090250725A1
公开(公告)日：2009-10-08
申请号：US12486686
申请日：2009-06-17
申请人： Tahir HUSSAIN , Miroslav MICOVIC , Paul HASHIMOTO , Gary PENG , Ara K. KURDOGHLIAN
发明人： Tahir HUSSAIN , Miroslav MICOVIC , Paul HASHIMOTO , Gary PENG , Ara K. KURDOGHLIAN
IPC分类号： H01L31/0336 , H01L31/0304
CPC分类号： H01L29/66462 , H01L21/24 , H01L21/242 , H01L21/28587 , H01L29/2003 , H01L29/452 , H01L29/66924
摘要： A method for fabricating a semiconductor device which protects the ohmic metal contacts and the channel of the device during subsequent high temperature processing steps is explained. An encapsulation layer is used to cover the channel and ohmic metal contacts. The present invention provides a substrate on which a plurality of semiconductor layers are deposited. The semiconductor layers act as the channel of the device. The semiconductor layers are covered with an encapsulation layer. A portion of the encapsulation layer and the plurality of semiconductor layers are removed, wherein ohmic metal contacts are deposited. The ohmic metal contacts are then annealed to help reduce their resistance. The encapsulation layer ensures that the ohmic metal contacts do not migrate during the annealing step and that the channel is not harmed by the high temperatures needed during the annealing step.
摘要翻译：说明了在随后的高温处理步骤中制造保护欧姆金属触点和器件通道的半导体器件的方法。封装层用于覆盖通道和欧姆金属触点。本发明提供一种其上沉积有多个半导体层的衬底。半导体层用作器件的通道。半导体层被封装层覆盖。去除封装层和多个半导体层的一部分，其中沉积欧姆金属接触。然后将欧姆金属触点退火以帮助降低其电阻。封装层确保在退火步骤期间欧姆金属接触不迁移，并且该通道不会受退火步骤期间所需的高温的损害。

3. 发明授权

US07566916B2 Ohmic metal contact and channel protection in GaN devices using an encapsulation layer 有权
标题翻译：使用封装层的GaN器件中的欧姆金属接触和沟道保护
公开(公告)号：US07566916B2
公开(公告)日：2009-07-28
申请号：US10964875
申请日：2004-10-13
申请人： Tahir Hussain , Miroslav Micovic , Paul Hashimoto , Gary Peng , Ara K. Kurdoghlian
发明人： Tahir Hussain , Miroslav Micovic , Paul Hashimoto , Gary Peng , Ara K. Kurdoghlian
IPC分类号： H01L31/072
CPC分类号： H01L29/66462 , H01L21/24 , H01L21/242 , H01L21/28587 , H01L29/2003 , H01L29/452 , H01L29/66924
摘要： A method for fabricating a semiconductor device which protects the ohmic metal contacts and the channel of the device during subsequent high temperature processing steps is explained. An encapsulation layer is used to cover the channel and ohmic metal contacts. The present invention provides a substrate on which a plurality of semiconductor layers are deposited. The semiconductor layers act as the channel of the device. The semiconductor layers are covered with an encapsulation layer. A portion of the encapsulation layer and the plurality of semiconductor layers are removed, wherein ohmic metal contacts are deposited. The ohmic metal contacts are then annealed to help reduce their resistance. The encapsulation layer ensures that the ohmic metal contacts do not migrate during the annealing step and that the channel is not harmed by the high temperatures needed during the annealing step.
摘要翻译：说明了在随后的高温处理步骤中制造保护欧姆金属触点和器件通道的半导体器件的方法。封装层用于覆盖通道和欧姆金属触点。本发明提供一种其上沉积有多个半导体层的衬底。半导体层用作器件的通道。半导体层被封装层覆盖。去除封装层和多个半导体层的一部分，其中沉积欧姆金属接触。然后将欧姆金属触点退火以帮助降低其电阻。封装层确保在退火步骤期间欧姆金属接触不迁移，并且该通道不会受退火步骤期间所需的高温的损害。

4. 发明申请

US20050048747A1 Ohmic metal contact and channel protection in GaN devices using an encapsulation layer 有权
公开(公告)号：US20050048747A1
公开(公告)日：2005-03-03
申请号：US10964875
申请日：2004-10-13
申请人： Tahir Hussain , Miroslav Micovic , Paul Hashimoto , Gary Peng , Ara Kurdoghlian
发明人： Tahir Hussain , Miroslav Micovic , Paul Hashimoto , Gary Peng , Ara Kurdoghlian
IPC分类号： H01L21/24 , H01L21/285 , H01L21/335 , H01L21/337 , H01L29/20 , H01L29/45 , H01L21/28
CPC分类号： H01L29/66462 , H01L21/24 , H01L21/242 , H01L21/28587 , H01L29/2003 , H01L29/452 , H01L29/66924
摘要： A method for fabricating a semiconductor device which protects the ohmic metal contacts and the channel of the device during subsequent high temperature processing steps is explained. An encapsulation layer is used to cover the channel and ohmic metal contacts. The present invention provides a substrate on which a plurality of semiconductor layers are deposited. The semiconductor layers act as the channel of the device. The semiconductor layers are covered with an encapsulation layer. A portion of the encapsulation layer and the plurality of semiconductor layers are removed, wherein ohmic metal contacts are deposited. The ohmic metal contacts are then annealed to help reduce their resistance. The encapsulation layer ensures that the ohmic metal contacts do not migrate during the annealing step and that the channel is not harmed by the high temperatures needed during the annealing step.

5. 发明授权

US06884704B2 Ohmic metal contact and channel protection in GaN devices using an encapsulation layer 有权
标题翻译：使用封装层的GaN器件中的欧姆金属接触和沟道保护
公开(公告)号：US06884704B2
公开(公告)日：2005-04-26
申请号：US10634348
申请日：2003-08-04
申请人： Tahir Hussain , Miroslav Micovic , Paul Hashimoto , Gary Peng , Ara K. Kurdoghlian
发明人： Tahir Hussain , Miroslav Micovic , Paul Hashimoto , Gary Peng , Ara K. Kurdoghlian
IPC分类号： H01L21/24 , H01L21/285 , H01L21/335 , H01L21/337 , H01L29/20 , H01L29/45 , H01L21/48 , H01L21/38
CPC分类号： H01L29/66462 , H01L21/24 , H01L21/242 , H01L21/28587 , H01L29/2003 , H01L29/452 , H01L29/66924
摘要： A method for fabricating a semiconductor device which protects the ohmic metal contacts and the channel of the device during subsequent high temperature processing steps is explained. An encapsulation layer is used to cover the channel and ohmic metal contacts. The present invention provides a substrate on which a plurality of semiconductor layers are deposited. The semiconductor layers act as the channel of the device. The semiconductor layers are covered with an encapsulation layer. A portion of the encapsulation layer and the plurality of semiconductor layers are removed, wherein ohmic metal contacts are deposited. The ohmic metal contacts are then annealed to help reduce their resistance. The encapsulation layer ensures that the ohmic metal contacts do not migrate during the annealing step and that the channel is not harmed by the high temperatures needed during the annealing step.
摘要翻译：说明了在随后的高温处理步骤中制造保护欧姆金属触点和器件通道的半导体器件的方法。封装层用于覆盖通道和欧姆金属触点。本发明提供一种其上沉积有多个半导体层的衬底。半导体层用作器件的通道。半导体层被封装层覆盖。去除封装层和多个半导体层的一部分，其中沉积欧姆金属接触。然后将欧姆金属触点退火以帮助降低其电阻。封装层确保在退火步骤期间欧姆金属触点不迁移，并且该通道不会受退火步骤期间所需的高温的损害。

6. 发明申请

US20050054530A1 Control of weed with a fungal pathogen 失效
标题翻译：用真菌病原体控制杂草
公开(公告)号：US20050054530A1
公开(公告)日：2005-03-10
申请号：US10476219
申请日：2002-04-30
申请人： Gary Peng , Kelly Byer
发明人： Gary Peng , Kelly Byer
IPC分类号： A01N63/04 , A01N63/00 , C12N1/16
CPC分类号： A01N63/04 , A01N2300/00
摘要： The present invention provides an isolated biocontrol agent, which is a strain of Pyricularia setariae. The present invention also relates to a biocontrol composition comprising at least one fungal biocontrol agent, which is a strain of Pyricularia setariae. Examples of the biocontrol agent of the presnet invention include Pyricularia setariae 94-904A (IDAC 190701-1), Pyricularia setariae 01-069A (IDAC 290102-01), and Pyricularia setariae 01-071A (IDAC 290102-02). Preferably, the biocontrol composition comprises an acceptable medium such as a liquid culture medium or a solid culture medium. The biocontrol agent or biocontrol composition may be used to suppress the growth of a weeds such as green foxtail (Setaria viridis [L.] Beauv.).
摘要翻译：本发明提供了一种分离的生物防治剂，其是Pyricularia setariae的菌株。本发明还涉及包含至少一种真菌生物防治剂的生物防治组合物，其是Pyricularia setariae菌株。预防性发明的生物防治剂的实例包括堇青霉94-904A（IDAC 190701-1），Pyricularia setariae 01-069A（IDAC 290102-01）和Pyricularia setariae 01-071A（IDAC 290102-02）。优选地，生物防治组合物包含可接受的培养基，例如液体培养基或固体培养基。生物防治剂或生物防治组合物可用于抑制诸如绿色狐尾（狗尾草（Setaria viridis [L.] Beauv。）的杂草的生长。

7. 发明授权

US07449428B2 Control of weed with a fungal pathogen 失效
标题翻译：用真菌病原体控制杂草
公开(公告)号：US07449428B2
公开(公告)日：2008-11-11
申请号：US10476219
申请日：2002-04-30
申请人： Gary Peng , Kelly N. Byer
发明人： Gary Peng , Kelly N. Byer
IPC分类号： A01N63/00
CPC分类号： A01N63/04 , A01N2300/00
摘要： The present invention provides an isolated biocontrol agent, which is a strain of Pyricularia setariae. The present invention also relates to a biocontrol composition comprising at least one fungal biocontrol agent, which is a strain of Pyricularia setariae. Examples of the biocontrol agent of the present invention include Pyricularia setariae 94-409A (IDAC 190701-1), Pyricularia setariae 01-069A (IDAC 290102-01), and Pyricularia setariae 01-071A (IDAC 290102-02). Preferably, the biocontrol composition comprises an acceptable medium such as a liquid culture medium or a solid culture medium. The biocontrol agent or biocontrol composition may be used to suppress the growth of a weeds such as green foxtail (Setaria viridis [L.] Beauv.).
摘要翻译：本发明提供了一种分离的生物防治剂，其是Pyricularia setariae的菌株。本发明还涉及包含至少一种真菌生物防治剂的生物防治组合物，其是Pyricularia setariae菌株。本发明的生物防治剂的实例包括堇青霉94-409A（IDAC 190701-1），白粉菌属（Pyricularia setariae）01-069A（IDAC 290102-01）和白芍（Pyricularia setariae）01-071A（IDAC 290102-02）。优选地，生物防治组合物包含可接受的培养基，例如液体培养基或固体培养基。生物防治剂或生物防治组合物可用于抑制诸如绿色狐尾（狗尾草（Setaria viridis [L.] Beauv。）的杂草的生长。

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