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1. 发明授权

US09338871B2 Feedforward temperature control for plasma processing apparatus 有权
标题翻译：等离子体处理装置的前馈温度控制
公开(公告)号：US09338871B2
公开(公告)日：2016-05-10
申请号：US12905624
申请日：2010-10-15
申请人： Chetan Mahadeswaraswamy , Walter R. Merry , Sergio Fukuda Shoji , Chunlei Zhang , Yashaswini B. Pattar , Duy D. Nguyen , Tina Tsong , Shane C. Nevil , Douglas A. Buchberger, Jr. , Fernando M. Silveira , Brad L. Mays , Kartik Ramaswamy , Hamid Noorbakhsh
发明人： Chetan Mahadeswaraswamy , Walter R. Merry , Sergio Fukuda Shoji , Chunlei Zhang , Yashaswini B. Pattar , Duy D. Nguyen , Tina Tsong , Shane C. Nevil , Douglas A. Buchberger, Jr. , Fernando M. Silveira , Brad L. Mays , Kartik Ramaswamy , Hamid Noorbakhsh
IPC分类号： G01L21/30 , G01R31/00 , H01L21/302 , H01L21/461 , H01L21/306 , C23F1/00 , H05H1/00 , H01J37/32
CPC分类号： H01J37/32009 , G05B6/02 , H01J37/3244 , H01J37/32715 , H01J37/32935 , H01J2237/334 , H05H1/0081
摘要： Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.
摘要翻译：用于控制等离子体处理室中的温度的方法和系统，其具有减少的控制器响应时间和增加的稳定性。温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。补偿由于等离子体功率引起的温度的干扰的前馈控制信号可以与测量温度和期望温度之间的反馈控制信号抵消误差相组合。

2. 发明授权

US08608900B2 Plasma reactor with feed forward thermal control system using a thermal model for accommodating RF power changes or wafer temperature changes 有权
标题翻译：具有前馈热控制系统的等离子体反应器，其使用用于适应RF功率变化或晶片温度变化的热模型
公开(公告)号：US08608900B2
公开(公告)日：2013-12-17
申请号：US11409183
申请日：2006-04-21
申请人： Douglas A. Buchberger, Jr. , Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman
发明人： Douglas A. Buchberger, Jr. , Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman
IPC分类号： H01L21/3065 , C23C16/52 , C23C16/46 , C23C16/458 , C23C16/503 , C23C16/509
CPC分类号： H01L21/67248 , F25B49/02 , F25B2400/0401 , F25B2400/0403 , F25B2400/0411 , F25B2700/21174 , F25B2700/21175 , H01J37/32091 , H01J37/32183 , H01J37/32724 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L21/6831 , H05H2001/4682
摘要： A plasma reactor having a reactor chamber and an electrostatic chuck with a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck and a memory storing a schedule of changes in RF power or wafer temperature. The reactor further includes a thermal model capable of simulating heat transfer between the evaporator and the surface based upon measurements from the temperature sensor, and a control processor coupled to the thermal model and to the memory and governing the backside gas pressure source in response to a prediction from the model of a change in the selected pressure that would compensate for the next scheduled change in RF power or implement the next scheduled change in wafer temperature.
摘要翻译：具有反应室和具有用于将工件保持在室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的背侧气体压力源，用于在选定压力下将导热气体施加到每次形成的工件表面界面中工件被保持在表面上，蒸发器在静电卡盘内部，制冷回路具有用于控制通过蒸发器的冷却剂流动的膨胀阀。反应器还包括静电卡盘中的温度传感器和存储RF功率或晶片温度变化计划的存储器。反应器还包括热模型，其能够基于来自温度传感器的测量来模拟蒸发器和表面之间的热传递;以及控制处理器，其耦合到热模型和存储器，并且响应于所述热模型和存储器控制背侧气体压力源从所选压力的变化的模型中预测将补偿下一次调频的功率变化或实现下一个预定的晶片温度的变化。

3. 发明授权

US08337660B2 Capacitively coupled plasma reactor having very agile wafer temperature control 有权
公开(公告)号：US08337660B2
公开(公告)日：2012-12-25
申请号：US12855678
申请日：2010-08-12
申请人： Douglas A. Buchberger, Jr. , Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman , Kenneth W. Cowans , William W. Cowans , Glenn W. Zubillaga , Isaac Millan
发明人： Douglas A. Buchberger, Jr. , Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman , Kenneth W. Cowans , William W. Cowans , Glenn W. Zubillaga , Isaac Millan
IPC分类号： H01L21/306 , C23C16/46 , C23C16/52 , H01L21/683
CPC分类号： H01L21/67248 , H01L21/67069 , H01L21/67109 , H01L21/6831
摘要： A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber having a top surface for supporting a workpiece and having indentations in the top surface that form enclosed gas flow channels whenever covered by a workpiece resting on the top surface. The reactor further includes thermal control apparatus thermally coupled to the electrostatic chuck, an RF plasma bias power generator coupled to apply RF power to the electrostatic chuck, a pressurized gas supply of a thermally conductive gas, a controllable gas valve coupling the pressurized gas supply to the indentations to facilitate filling the channels with the thermally conductive gas for heat transfer between a backside of a workpiece and the electrostatic chuck at a heat transfer rate that is a function of the pressure against the backside of the workpiece of the thermally conductive gas. The reactor further includes an agile workpiece temperature control loop including (a) a temperature probe in the electrostatic chuck, and (b) a backside gas pressure controller coupled to an output of the temperature probe and responsive to a specified desired temperature, the controller governing the gas valve in response to a difference between the output of the temperature probe and the desired temperature.

4. 发明授权

US08092639B2 Plasma reactor with feed forward thermal control system using a thermal model for accommodating RF power changes or wafer temperature changes 有权
标题翻译：具有前馈热控制系统的等离子体反应器，其使用用于适应RF功率变化或晶片温度变化的热模型
公开(公告)号：US08092639B2
公开(公告)日：2012-01-10
申请号：US12855674
申请日：2010-08-12
申请人： Douglas A. Buchberger, Jr. , Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman , Kenneth W. Cowans , William W. Cowans , Glenn W. Zubillaga , Isaac Millan
发明人： Douglas A. Buchberger, Jr. , Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman , Kenneth W. Cowans , William W. Cowans , Glenn W. Zubillaga , Isaac Millan
IPC分类号： H01L21/3065 , C23C16/00 , C23C16/455 , C23C16/458 , C23C16/46 , C23C16/50
CPC分类号： H01L21/67248 , F25B49/02 , F25B2400/0401 , F25B2400/0403 , F25B2400/0411 , F25B2700/21174 , F25B2700/21175 , H01J37/32091 , H01J37/32183 , H01J37/32724 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L21/6831 , H05H2001/4682
摘要： A plasma reactor having a reactor chamber and an electrostatic chuck with a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck and a memory storing a schedule of changes in RF power or wafer temperature. The reactor further includes a thermal model capable of simulating heat transfer between the evaporator and the surface based upon measurements from the temperature sensor, and a control processor coupled to the thermal model and to the memory and governing the backside gas pressure source in response to a prediction from the model of a change in the selected pressure that would compensate for the next scheduled change in RF power or implement the next scheduled change in wafer temperature.
摘要翻译：具有反应室和具有用于将工件保持在室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的背侧气体压力源，用于在选定压力下将导热气体施加到每次形成的工件表面界面中工件被保持在表面上，蒸发器在静电卡盘内部，制冷回路具有用于控制通过蒸发器的冷却剂流动的膨胀阀。反应器还包括静电卡盘中的温度传感器和存储RF功率或晶片温度变化计划的存储器。反应器还包括热模型，其能够基于来自温度传感器的测量来模拟蒸发器和表面之间的热传递;以及控制处理器，其耦合到热模型和存储器，并且响应于所述热模型和存储器控制背侧气体压力源从所选压力的变化的模型中预测将补偿下一次调频的功率变化或实现下一个预定的晶片温度的变化。

5. 发明授权

US08080479B2 Plasma process uniformity across a wafer by controlling a variable frequency coupled to a harmonic resonator 失效
标题翻译：通过控制耦合到谐波谐振器的可变频率在晶片上的等离子体工艺均匀性
公开(公告)号：US08080479B2
公开(公告)日：2011-12-20
申请号：US11733858
申请日：2007-04-11
申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
发明人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
IPC分类号： H01L21/302
CPC分类号： C23C16/45574 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01L21/67069 , H01L21/6831
摘要： A method of processing a workpiece in a plasma reactor chamber includes coupling RF power via an electrode to plasma in the chamber, the RF power being of a variable frequency in a frequency range that includes a fundamental frequency f. The method also includes coupling the electrode to a resonator having a resonant VHF frequency F which is a harmonic of the fundamental frequency f, so as to produce VHF power at the harmonic. The method controls the ratio of power near the fundamental f to power at harmonic F, by controlling the proportion of power from the generator that is up-converted from f to F, so as to control plasma ion density distribution.
摘要翻译：在等离子体反应器室中处理工件的方法包括经由电极将RF功率耦合到腔室中的等离子体，RF功率在包括基频f的频率范围内是可变频率的。该方法还包括将电极耦合到具有作为基频f的谐波的谐振VHF频率F的谐振器，以便在谐波处产生VHF功率。该方法通过控制从f向F转换为F的发电机的功率比例来控制基波f附近的功率与谐波F功率的比值，以便控制等离子体离子密度分布。

6. 发明申请

US20090272717A1 METHOD AND APPARATUS OF A SUBSTRATE ETCHING SYSTEM AND PROCESS 审中-公开
标题翻译：基板蚀刻系统和工艺的方法和装置
公开(公告)号：US20090272717A1
公开(公告)日：2009-11-05
申请号：US12407548
申请日：2009-03-19
申请人： Sharma V. Pamarthy , Jon C. Farr , Khalid Sirajuddin , Ezra Robert Gold , James P. Cruse , Scott Olszewski , Roy C. Nangoy , Saravjeet Singh , Douglas A. Buchberger, JR. , Jared Ahmad Lee , Chunlei Zhang
发明人： Sharma V. Pamarthy , Jon C. Farr , Khalid Sirajuddin , Ezra Robert Gold , James P. Cruse , Scott Olszewski , Roy C. Nangoy , Saravjeet Singh , Douglas A. Buchberger, JR. , Jared Ahmad Lee , Chunlei Zhang
IPC分类号： C23F1/00
CPC分类号： H01L21/30655 , Y10T137/0318 , Y10T137/87169
摘要： Embodiments of the invention relate to a substrate etching system and process. In one embodiment, a method may include depositing material on the substrate during a deposition process, etching a first layer of the substrate during a first etch process, and etching a second layer of the substrate during a second etch process, wherein a first bias power is applied to the substrate during the first process, and wherein a second bias power is applied to the substrate during the second etch process. In another embodiment, a system may include a gas delivery system containing a first gas panel for supplying a first gas to a chamber, a second gas panel for supplying a second gas to the chamber, and a plurality of flow controllers for directing the gases to the chamber to facilitate rapid gas transitioning between the gases to and from the chamber and the panels.
摘要翻译：本发明的实施例涉及一种基板蚀刻系统和工艺。在一个实施例中，一种方法可以包括在沉积工艺期间在衬底上沉积材料，在第一蚀刻工艺期间蚀刻衬底的第一层，以及在第二蚀刻工艺期间蚀刻衬底的第二层，其中第一偏置功率在第一工艺期间施加到衬底，并且其中在第二蚀刻工艺期间将第二偏压功率施加到衬底。在另一个实施例中，系统可以包括气体输送系统，其包含用于向腔室供应第一气体的第一气体面板，用于向腔室供应第二气体的第二气体面板，以及用于将气体引导到该室用于促进在进出室和面板之间的气体之间的快速气体转变。

7. 发明申请

US20090097184A1 ELECTROSTATIC CHUCK ASSEMBLY 有权
标题翻译：静电块组件
公开(公告)号：US20090097184A1
公开(公告)日：2009-04-16
申请号：US11871807
申请日：2007-10-12
申请人： DOUGLAS A. BUCHBERGER, JR. , Paul Brillhart
发明人： DOUGLAS A. BUCHBERGER, JR. , Paul Brillhart
IPC分类号： H05F3/00
CPC分类号： H01L21/6831 , H01L21/67109
摘要： The present invention generally comprises an electrostatic chuck base, an electrostatic chuck assembly, and a puck for the electrostatic chuck assembly. Precisely etching a substrate within a plasma chamber may be a challenge because the plasma within the chamber may cause the temperature across the substrate to be non-uniform. A temperature gradient may exist across the substrate such that the edge of the substrate is at a different temperature compared to the center of the substrate. When the temperature of the substrate is not uniform, features may not be uniformly etched into the various layers of the structure disposed above the substrate. A dual zone electrostatic chuck assembly may compensate for temperature gradients across a substrate surface.
摘要翻译：本发明通常包括静电卡盘基座，静电卡盘组件和用于静电卡盘组件的圆盘。精确蚀刻等离子体室内的衬底可能是一个挑战，因为室内的等离子体可能导致衬底上的温度不均匀。衬底上可能存在温度梯度，使得衬底的边缘与衬底的中心相比处于不同的温度。当衬底的温度不均匀时，可能不能将特征均匀地蚀刻到设置在衬底上方的结构的各个层中。双区域静电吸盘组件可以补偿穿过衬底表面的温度梯度。

8. 发明授权

US06677712B2 Gas distribution plate electrode for a plasma receptor 有权
标题翻译：用于等离子体受体的气体分布板电极
公开(公告)号：US06677712B2
公开(公告)日：2004-01-13
申请号：US10442386
申请日：2003-05-20
申请人： Dan Katz , Douglas A. Buchberger, Jr. , Yan Ye , Robert B. Hagen , Xiaoye Zhao , Ananda H. Kumar , Kang-Lie Chiang , Hamid Noorbakhsh , Shiang-Bau Wang
发明人： Dan Katz , Douglas A. Buchberger, Jr. , Yan Ye , Robert B. Hagen , Xiaoye Zhao , Ananda H. Kumar , Kang-Lie Chiang , Hamid Noorbakhsh , Shiang-Bau Wang
IPC分类号： H01J724
CPC分类号： H01J37/3244
摘要： The invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a gas distribution plate including a front plate in the chamber and a back plate on an external side of the front plate, the gas distribution plate comprising a gas manifold adjacent the back plate, the back and front plates bonded together and forming an assembly. The assembly includes an array of holes through the front plate and communicating with the chamber, at least one gas flow-controlling orifice through the back plate and communicating between the manifold and at least one of the holes, the orifice having a diameter that determines gas flow rate to the at least one hole. In addition, an array of pucks is at least generally congruent with the array of holes and disposed within respective ones of the holes to define annular gas passages for gas flow through the front plate into the chamber, each of the annular gas passages being non-aligned with the orifice.
摘要翻译：本发明体现在用于处理半导体晶片的等离子体反应器中，该反应器具有气体分配板，该气体分配板包括在该腔室中的前板和在前板的外侧上的后板，该气体分配板包括邻近的气体歧管背板，后板和前板结合在一起并形成组件。组件包括穿过前板并与腔室连通的孔阵列，至少一个通过后板的气体流量控制孔，并在歧管和至少一个孔之间连通，孔口具有确定气体的直径至少一个孔的流速。此外，一组圆盘至少大体上与孔阵列一致，并且设置在孔的相应孔内，以限定用于气体流过前板进入腔室的环形气体通道，每个环形气体通道是非限制性的，与孔对齐。

9. 发明授权

US06365063B2 Plasma reactor having a dual mode RF power application 失效
标题翻译：具有双模RF功率应用的等离子体反应器
公开(公告)号：US06365063B2
公开(公告)日：2002-04-02
申请号：US09350234
申请日：1999-07-09
申请人： Kenneth S Collins , Michael Rice , Farahmand E Askarinam , Douglas A Buchberger, Jr. , Craig A Roderick
发明人： Kenneth S Collins , Michael Rice , Farahmand E Askarinam , Douglas A Buchberger, Jr. , Craig A Roderick
IPC分类号： C23F100
CPC分类号： H01J37/32458 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J37/32871 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01L21/31116 , H01L21/6831
摘要： In a plasma reactor including a reactor chamber, a workpiece support for holding a workpiece inside the chamber during processing and an inductive antenna, a window electrode proximal a wall of the chamber, the antenna and wall being positioned adjacently, the window electrode being operable as (a) a capacitive electrode accepting RF power to capacitively coupled plasma source power into the chamber, and (b) a window electrode passing Rf power therethrough from said antenna into the chamber to inductively couple plasma source power into the chamber.
摘要翻译：在包括反应器室的等离子体反应器中，用于在处理期间将工件保持在室内的工件支撑件和感应天线，靠近室壁的窗口电极，天线和壁相邻地定位，窗口电极可操作为（a）容纳RF功率的电容电极，用于将等离子体源功率电容耦合到腔室中，以及（b）将来自所述天线的Rf功率从所述天线传递到腔室中以将等离子体源功率感应耦合到腔室中的窗口电极。

10. 发明授权

US09267742B2 Apparatus for controlling the temperature uniformity of a substrate 有权
标题翻译：用于控制基板的温度均匀性的装置
公开(公告)号：US09267742B2
公开(公告)日：2016-02-23
申请号：US12886255
申请日：2010-09-20
申请人： Kallol Bera , Xiaoping Zhou , Douglas A. Buchberger, Jr. , Andrew Nguyen , Hamid Tavassoli , Surajit Kumar , Shahid Rauf
发明人： Kallol Bera , Xiaoping Zhou , Douglas A. Buchberger, Jr. , Andrew Nguyen , Hamid Tavassoli , Surajit Kumar , Shahid Rauf
IPC分类号： F25B29/00 , F28F3/12 , F28F13/00
CPC分类号： F28F3/12 , F28F2013/001
摘要： Apparatus for controlling the thermal uniformity of a substrate. In some embodiments, the thermal uniformity of the substrate is controlled to be more uniform. In some embodiments, the thermal uniformity of the substrate is controlled to be non-uniform in a desired pattern. In some embodiments, an apparatus for controlling thermal uniformity of a substrate includes a substrate support having a support surface to support a substrate thereon. A plurality of flow paths having a substantially equivalent fluid conductance are disposed within the substrate support to flow a heat transfer fluid beneath the support surface.
摘要翻译：用于控制基板的热均匀性的装置。在一些实施例中，将基板的热均匀性控制得更均匀。在一些实施例中，基板的热均匀性被控制为以期望的图案不均匀。在一些实施例中，用于控制衬底的热均匀性的装置包括具有用于在其上支撑衬底的支撑表面的衬底支撑件。具有基本相当的流体电导的多个流动路径设置在基板支撑件内，以使传热流体在支撑表面下方流动。

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