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1. 发明申请

US20080296706A1 COBALT DISILICIDE STRUCTURE 失效
标题翻译：钴离子结构
公开(公告)号：US20080296706A1
公开(公告)日：2008-12-04
申请号：US12175549
申请日：2008-07-18
申请人： David Paul Agnello , Mary Conroy Bushey , Donna K. Johnson , Jerome Brett Lasky , Peter James Lindgren , Kirk David Peterson
发明人： David Paul Agnello , Mary Conroy Bushey , Donna K. Johnson , Jerome Brett Lasky , Peter James Lindgren , Kirk David Peterson
IPC分类号： H01L29/78
CPC分类号： H01L29/665 , H01L21/28518 , H01L21/31111 , H01L21/32134
摘要： A structure. The structure may include a layer of cobalt disilicide that is substantially free of cobalt monosilicide and there is substantially no stringer of an oxide of titanium on the layer of cobalt disilicide. The structure may include a substrate that includes: an insulated-gate field effect transistor (FET) that includes a source, a drain, and a gate; a first layer of cobalt disilicide on the source, said first layer having substantially no cobalt monosilicide, and said first layer having substantially no stringer of an oxide of titanium thereon; a second layer of cobalt disilicide on the drain, said second layer having substantially no cobalt monosilicide having substantially no stringer of an oxide of titanium thereon; and a third layer of cobalt disilicide on the gate, said third layer having substantially no cobalt monosilicide and having substantially no stringer of an oxide of titanium thereon.
摘要翻译：一个结构。该结构可以包括基本上不含一钴硅酸钴的二硅化钴层，并且在二硅化钴层上基本上没有钛氧化物的桁条。该结构可以包括：衬底，其包括：绝缘栅场效应晶体管（FET），其包括源极，漏极和栅极; 在源极上的第二层二硅化钴，所述第一层基本上不含有一氧化硅钴，并且所述第一层在其上基本上不具有钛氧化物的桁条; 漏极上的第二层二硅化锡，所述第二层基本上不具有在其上的钛氧化物基本上没有棱的钴单硅化物; 和在栅极上的第二层二硅化锡，所述第三层基本上不含有一氧化硅钴，并且在其上基本上没有钛氧化物的桁条。

2. 发明授权

US06853032B2 Structure and method for formation of a blocked silicide resistor 失效
标题翻译：用于形成阻塞硅化物电阻器的结构和方法
公开(公告)号：US06853032B2
公开(公告)日：2005-02-08
申请号：US10729379
申请日：2003-12-08
申请人： Arne W. Ballantine , Donna K. Johnson , Glen L. Miles
发明人： Arne W. Ballantine , Donna K. Johnson , Glen L. Miles
IPC分类号： C23C16/42 , H01L21/02 , H01L21/28 , H01L21/318 , H01L21/331 , H01L21/822 , H01L21/8238 , H01L27/04 , H01L27/092 , H01L29/73 , H01L29/737 , H01L31/119
CPC分类号： H01L28/20 , H01L21/3185
摘要： A process of forming a nitride film on a semiconductor substrate including exposing a surface of the substrate to a rapid thermal process to form the nitride film.
摘要翻译：一种在半导体衬底上形成氮化物膜的方法，包括将衬底的表面暴露于快速热处理以形成氮化物膜。

3. 发明授权

US07696586B2 Cobal disilicide structure 失效
标题翻译：钴二硅化物结构
公开(公告)号：US07696586B2
公开(公告)日：2010-04-13
申请号：US12175549
申请日：2008-07-18
申请人： David Paul Agnello , Mary Conroy Bushey , Donna K. Johnson , Jerome Brett Lasky , Peter James Lindgren , Kirk David Peterson
发明人： David Paul Agnello , Mary Conroy Bushey , Donna K. Johnson , Jerome Brett Lasky , Peter James Lindgren , Kirk David Peterson
IPC分类号： H01L29/78 , H01L21/28
CPC分类号： H01L29/665 , H01L21/28518 , H01L21/31111 , H01L21/32134
摘要： A structure. The structure may include a layer of cobalt disilicide that is substantially free of cobalt monosilicide and there is substantially no stringer of an oxide of titanium on the layer of cobalt disilicide. The structure may include a substrate that includes: an insulated-gate field effect transistor (FET) that includes a source, a drain, and a gate; a first layer of cobalt disilicide on the source, said first layer having substantially no cobalt monosilicide, and said first layer having substantially no stringer of an oxide of titanium thereon; a second layer of cobalt disilicide on the drain, said second layer having substantially no cobalt monosilicide having substantially no stringer of an oxide of titanium thereon; and a third layer of cobalt disilicide on the gate, said third layer having substantially no cobalt monosilicide and having substantially no stringer of an oxide of titanium thereon.
摘要翻译：一个结构。该结构可以包括基本上不含一钴硅酸钴的二硅化钴层，并且在二硅化钴层上基本上没有钛氧化物的桁条。该结构可以包括：衬底，其包括：绝缘栅场效应晶体管（FET），其包括源极，漏极和栅极; 在源极上的第二层二硅化钴，所述第一层基本上不含有一氧化硅钴，并且所述第一层在其上基本上不具有钛氧化物的桁条; 漏极上的第二层二硅化锡，所述第二层基本上不具有在其上的钛氧化物基本上没有棱的钴单硅化物; 和在栅极上的第二层二硅化锡，所述第三层基本上不含有一氧化硅钴，并且在其上基本上没有钛氧化物的桁条。

4. 发明授权

US07381276B2 Susceptor pocket with beveled projection sidewall 有权
标题翻译：具有斜面突起侧壁的受体袋
公开(公告)号：US07381276B2
公开(公告)日：2008-06-03
申请号：US10064451
申请日：2002-07-16
申请人： Donna K. Johnson , Jim S. Nakos , Jean-Jacques H. Psaute , Bernard A. Roque, Jr.
发明人： Donna K. Johnson , Jim S. Nakos , Jean-Jacques H. Psaute , Bernard A. Roque, Jr.
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01L21/68721 , H01L21/68728 , H01L21/68735
摘要： An apparatus for holding a semiconductor substrate comprises a plate having a pocket which holds the substrate, wherein the pocket comprises a lower surface and an inner edge. The inner edge comprises a plurality of members extending radially inward to reduce the area of contact between the inner edge and the substrate. The beveled edge is inclined so that there is an acute angle between the lower surface of the pocket and the beveled edge.
摘要翻译：用于保持半导体衬底的装置包括具有保持衬底的口袋的板，其中袋包括下表面和内边缘。内边缘包括径向向内延伸的多个构件，以减小内缘和衬底之间的接触面积。倾斜的边缘倾斜，使得在凹槽的下表面和斜边之间存在锐角。

5. 发明授权

US06638629B2 Semiconductor temperature monitor 失效
标题翻译：半导体温度监测仪
公开(公告)号：US06638629B2
公开(公告)日：2003-10-28
申请号：US10200904
申请日：2002-07-22
申请人： Donna K. Johnson , Jerome B. Lasky , Glenn R. Miller
发明人： Donna K. Johnson , Jerome B. Lasky , Glenn R. Miller
IPC分类号： C30B502
CPC分类号： H01L22/34 , Y10T428/12674 , Y10T428/12681 , Y10T428/21
摘要： A method and structure for fabricating a semiconductor wafer that may be used to monitor the temperature distribution across a wafer surface. A substrate that includes a semiconductor material and a first dopant, has an amorphous layer formed from a top portion of the substrate, and the amorphous layer is doped with a second dopant of polarity opposite to a polarity of the first dopant. Heating of the wafer at 450 to 625 degree C. recrystallizes a portion of the amorphous layer that is adjacent to the substrate at a recrystallization rate that depends on a local temperature on the wafer surface. The measured spatial distribution of sheet resistance may be utilized to readjust the spatial distribution of heat input to another wafer in order to achieve a more uniform temperature across the other wafer's surface.
摘要翻译：一种用于制造半导体晶片的方法和结构，该半导体晶片可用于监测跨晶片表面的温度分布。包括半导体材料和第一掺杂剂的衬底具有由衬底的顶部形成的非晶层，并且非晶层掺杂有与第一掺杂剂的极性相反极性的第二掺杂剂。在450〜625℃下对晶片进行加热，以取决于晶片表面的局部温度的再结晶速率，重结晶与基板相邻的部分非晶层。测量的薄层电阻的空间分布可以用于重新调整输入到另一晶片的热空间分布，以便在另一晶片的表面上实现更均匀的温度。

6. 发明授权

US06660664B1 Structure and method for formation of a blocked silicide resistor 失效
标题翻译：用于形成阻塞硅化物电阻器的结构和方法
公开(公告)号：US06660664B1
公开(公告)日：2003-12-09
申请号：US09541091
申请日：2000-03-31
申请人： James W. Adkisson , Arne W. Ballantine , Matthew D. Gallagher , Peter J. Geiss , Jeffrey D. Gilbert , Shwu-Jen Jeng , Donna K. Johnson , Robb A. Johnson , Glen L. Miles , Kirk D. Peterson , James J. Toomey , Tina Wagner
发明人： James W. Adkisson , Arne W. Ballantine , Matthew D. Gallagher , Peter J. Geiss , Jeffrey D. Gilbert , Shwu-Jen Jeng , Donna K. Johnson , Robb A. Johnson , Glen L. Miles , Kirk D. Peterson , James J. Toomey , Tina Wagner
IPC分类号： H01L2131
CPC分类号： H01L28/20 , H01L21/3185
摘要： A process of forming a nitride film on a semiconductor substrate including exposing a surface of the substrate to a rapid thermal process to form the nitride film.
摘要翻译：一种在半导体衬底上形成氮化物膜的方法，包括将衬底的表面暴露于快速热处理以形成氮化物膜。

7. 发明授权

US06472232B1 Semiconductor temperature monitor 失效
标题翻译：半导体温度监测仪
公开(公告)号：US06472232B1
公开(公告)日：2002-10-29
申请号：US09510262
申请日：2000-02-22
申请人： Donna K. Johnson , Jerome B. Lasky , Glenn R. Miller
发明人： Donna K. Johnson , Jerome B. Lasky , Glenn R. Miller
IPC分类号： G01R3126
CPC分类号： H01L22/34 , Y10T428/12674 , Y10T428/12681 , Y10T428/21
摘要： A method, and associated structure, for fabricating a semiconductor wafer that may be used to monitor the temperature distribution across the wafer surface. Given a substrate that includes a semiconductor material and a first dopant, an amorphous layer is formed from a top portion of the substrate, and the amorphous layer is doped with a second dopant of polarity opposite to a polarity of the first dopant. The amorphous layer may be formed by directing an ionic species, such as ionic germanium, into the top portion of the substrate. Alternatively, particular second dopants, such as arsenic, may serve to also amorphize the top portion of the substrate. Next, the wafer is heated to a temperature in a range of 450 to 625° C. The heating of the wafer recrystallizes a portion of the amorphous layer that is adjacent to the substrate at a recrystallization rate that depends on a local temperature on the wafer surface. After being heated, the wafer is removed and a sheet resistance is measured at points on the wafer surface. Since the local sheet resistance is a function of the local thickness of the recrystallized layer, a spatial distribution of sheet resistance over the wafer surface reflects a distribution of wafer temperature across the wafer surface during the heating of the wafer. The measured spatial distribution of sheet resistance may be utilized to readjust the spatial distribution of heat input to another wafer in order to achieve a more uniform temperature across the other wafer's surface.
摘要翻译：一种用于制造半导体晶片的方法和相关结构，其可用于监测晶片表面上的温度分布。给定包括半导体材料和第一掺杂剂的衬底，从衬底的顶部形成非晶层，并且非晶层掺杂极性与第一掺杂剂极性相反的第二掺杂剂。非晶层可以通过将离子物质例如离子锗引入衬底的顶部而形成。或者，特定的第二掺杂剂（例如砷）也可以用于使基底的顶部部分非晶化。接下来，将晶片加热到450-625℃的温度。晶片的加热使得与晶片相邻的非晶层的一部分以取决于晶片上的局部温度的再结晶速率重结晶表面。加热后，去除晶片，并在晶片表面上的点测量薄层电阻。由于局部薄层电阻是再结晶层的局部厚度的函数，薄片电阻在晶片表面上的空间分布反映了在晶片加热期间晶片温度跨晶片表面的分布。测量的薄层电阻的空间分布可以用于重新调整输入到另一晶片的热空间分布，以便在另一晶片的表面上实现更均匀的温度。

8. 发明授权

US06335294B1 Wet cleans for cobalt disilicide processing 失效
标题翻译：二氧化硅处理湿法清洗
公开(公告)号：US06335294B1
公开(公告)日：2002-01-01
申请号：US09296338
申请日：1999-04-22
申请人： David Paul Agnello , Mary Conroy Bushey , Donna K. Johnson , Jerome Brett Lasky , Peter James Lindgren , Kirk David Peterson
发明人： David Paul Agnello , Mary Conroy Bushey , Donna K. Johnson , Jerome Brett Lasky , Peter James Lindgren , Kirk David Peterson
IPC分类号： H01L2100
CPC分类号： H01L29/665 , H01L21/28518 , H01L21/31111 , H01L21/32134
摘要： A method for removing a formation of oxide of titanium that is generated as a byproduct of a process that forms cobalt disilicide within an insulated-gate field effect transistor (FET). The method applies a chemical reagent to the FET at a predetermined temperature, and for a predetermined period of time, necessary for removing the formation, wherein the reagent does not chemically react with the cobalt disilicide. A reagent that accomplishes this task comprises water (H2O), ammonium hydroxide (NH4OH), and hydrogen peroxide (H2O2), wherein the NH4OH and the H2O2 each comprise approximately 4% of the total reagent volume. An effective temperature is 65° C. combined with a 3 minute period of application.
摘要翻译：作为在绝缘栅场效应晶体管（FET）内形成二硅化钴的工序的副产物而生成的钛的氧化物的形成的方法。该方法在规定的温度下向化学试剂施加化学试剂，并且在预定时间内，对于除去形成所需的预定时间，其中试剂不与二硅化钴发生化学反应。实现这一任务的试剂包括水（H 2 O），氢氧化铵（NH 4 OH）和过氧化氢（H 2 O 2），其中NH 4 OH和H 2 O 2各自占总试剂体积的约4％。有效温度为65°C，加上3分钟的使用时间。

9. 发明授权

US06271054B1 Method for reducing dark current effects in a charge couple device 失效
标题翻译：降低电荷耦合器件中暗电流效应的方法
公开(公告)号：US06271054B1
公开(公告)日：2001-08-07
申请号：US09586500
申请日：2000-06-02
申请人： Arne W. Ballantine , George A. Dunbar, III , James V. Hart, III , Donna K. Johnson , Glenn C. MacDougall
发明人： Arne W. Ballantine , George A. Dunbar, III , James V. Hart, III , Donna K. Johnson , Glenn C. MacDougall
IPC分类号： H01L2100
CPC分类号： H01L27/14812 , H01L27/14887
摘要： The dark current defects in a charge couple device are reduced by employing a hydrogen anneal followed by depositing a silicon nitride barrier layer by RTCVD.
摘要翻译：通过采用氢退火，然后通过RTCVD沉积氮化硅阻挡层来减小电荷耦合器件中的暗电流缺陷。

10. 发明授权

US07411258B2 Cobalt disilicide structure 失效
标题翻译：二硅化钴结构
公开(公告)号：US07411258B2
公开(公告)日：2008-08-12
申请号：US09939895
申请日：2001-08-27
申请人： David Paul Agnello , Mary Conroy Bushey , Donna K. Johnson , Jerome Brett Lasky , Peter James Lindgren , Kirk David Peterson
发明人： David Paul Agnello , Mary Conroy Bushey , Donna K. Johnson , Jerome Brett Lasky , Peter James Lindgren , Kirk David Peterson
IPC分类号： H01L29/76 , H01L29/94
CPC分类号： H01L29/665 , H01L21/28518 , H01L21/31111 , H01L21/32134
摘要： A structure relating to removal of an oxide of titanium generated as a byproduct of a process that forms cobalt disilicide within an insulated-gate field effect transistor (FET). The structure may comprise a layer of cobalt disilicide that is substantially free of cobalt monosilicide, with substantially no stringer of an oxide of titanium on the layer of cobalt disilicide. The structure may alternatively comprise a layer of cobalt disilicide, a patch of an oxide of titanium, and a reagent in contact with the patch at a temperature and for a period of time. The layer is substantially free of cobalt monosilicide. The patch is on the layer of cobalt disilicide. The reagent is adapted to remove the patch within the period of time. The reagent does not chemically react with the layer of cobalt disilicide, and the reagent comprises water, ammonium hydroxide, and hydrogen peroxide.
摘要翻译：涉及在绝缘栅场效应晶体管（FET）中除去作为形成二硅化钴的工艺的副产物的钛的氧化物的结构。该结构可以包含基本上不含一钴硅酸钴的二硅化钴层，在二硅化钴层上基本上没有钛氧化物的桁条。该结构可以可选地包括一层二硅化钴，一块钛的氧化物和在该温度和一段时间内与该贴片接触的试剂。该层基本上不含一次硅化钴。贴片在二硅化钴层上。试剂适于在一段时间内除去贴剂。试剂不与二硅化钴层发生化学反应，试剂包括水，氢氧化铵和过氧化氢。

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