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1. 发明申请

US20140016397A1 NONVOLATILE MEMORY DEVICE AND WRITE METHOD THEREOF 审中-公开
标题翻译：非易失性存储器件及其写入方法
公开(公告)号：US20140016397A1
公开(公告)日：2014-01-16
申请号：US13939324
申请日：2013-07-11
申请人： WONSEOK LEE , SEONGHYUN JEON , DONG HWI KIM
发明人： WONSEOK LEE , SEONGHYUN JEON , DONG HWI KIM
IPC分类号： G11C13/00 , G11C7/10
CPC分类号： G11C13/0069 , G11C7/10 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C13/0002 , G11C13/0004 , G11C13/0007 , G11C13/0033 , G11C16/10 , G11C16/3431 , G11C16/349 , G11C2013/0076 , G11C2213/79
摘要： A nonvolatile memory device includes a memory cell array including a plurality of memory cells, and a data comparison write unit connected with the memory cell array and configured to support a comparison write operation. The nonvolatile memory device further includes control logic configured to selectively execute the comparison write operation based on a comparison between an access number of the memory cell array and a reference number.
摘要翻译：非易失性存储器件包括包括多个存储器单元的存储单元阵列和与存储单元阵列连接并被配置为支持比较写入操作的数据比较写入单元。非易失性存储器件还包括控制逻辑，配置为基于存储单元阵列的访问号与参考号之间的比较选择性地执行比较写入操作。

2. 发明申请

US20130300639A1 ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF DRIVING THE SAME 审中-公开
标题翻译：有机发光显示装置及其驱动方法
公开(公告)号：US20130300639A1
公开(公告)日：2013-11-14
申请号：US13587856
申请日：2012-08-16
申请人： Dong-Hwi Kim
发明人： Dong-Hwi Kim
IPC分类号： G09G3/32 , G09G5/00 , H01L27/32
CPC分类号： G09G3/3233 , G09G2300/0439 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2310/0251 , G09G2310/0262 , G09G2320/0242
摘要： An organic light emitting display device including: red sub-pixels, each including a red organic light emitting diode and a driving transistor; green sub-pixels, each including a green organic light emitting diode and a driving transistor; and blue sub-pixels, each including a blue organic light emitting diode and a driving transistor, wherein the driving transistors of the red, green, and blue sub-pixels are configured to be initialized by a voltage applied to an anode electrode of the red, green, or blue organic light emitting diodes.
摘要翻译：一种有机发光显示装置，包括：红色子像素，每个红色子像素包括红色有机发光二极管和驱动晶体管; 绿色子像素，每个包括绿色有机发光二极管和驱动晶体管; 和蓝色子像素，每个子像素包括蓝色有机发光二极管和驱动晶体管，其中红色，绿色和蓝色子像素的驱动晶体管被配置为通过施加到红色的阳极电极的电压来初始化，绿色或蓝色有机发光二极管。

3. 发明申请

US20130077382A1 HYBRID MEMORY DEVICE, SYSTEM INCLUDING THE SAME, AND METHOD OF READING AND WRITING DATA IN THE HYBRID MEMORY DEVICE 有权
标题翻译：混合存储器件，包括其的系统以及在混合存储器件中读取和写入数据的方法
公开(公告)号：US20130077382A1
公开(公告)日：2013-03-28
申请号：US13616398
申请日：2012-09-14
申请人： Geun-Hee CHO , Duc NGUYEN , Dong-Hwi KIM
发明人： Geun-Hee CHO , Duc NGUYEN , Dong-Hwi KIM
IPC分类号： G11C11/21 , G11C16/04 , G06F12/02 , G11C7/10
CPC分类号： G11C5/04 , G06F12/0638 , G11C7/10 , G11C7/1045 , G11C11/005 , G11C14/0018 , Y02D10/13
摘要： A hybrid memory device is provided. The hybrid memory device includes a DRAM, a non-volatile memory and a control circuit. The control circuit selects one of output data of the DRAM and output data of the non-volatile memory according to a mode selecting signal and output the selected data. The control circuit outputs data requested to be output from the DRAM when the data requested to be output is in the DRAM, and may output the data requested to be output from the non-volatile memory when the data requested to be output is in the non-volatile memory. Accordingly, the hybrid memory device has a high speed in a read and write operation, and has low power consumption.
摘要翻译：提供了一种混合存储器件。混合存储器件包括DRAM，非易失性存储器和控制电路。控制电路根据模式选择信号选择DRAM的输出数据和非易失性存储器的输出数据之一，并输出所选择的数据。当请求输出的数据在DRAM中时，控制电路输出请求从DRAM输出的数据，并且当请求输出的数据为非数据时，可以输出请求从非易失性存储器输出的数据非易失存储器因此，混合存储装置在读取和写入操作中具有高速度，并且具有低功耗。

4. 发明申请

US20100000726A1 HEAT EXCHANGER 审中-公开
标题翻译：热交换器
公开(公告)号：US20100000726A1
公开(公告)日：2010-01-07
申请号：US12494716
申请日：2009-06-30
申请人： Sang Yeul LEE , Han Choon LEE , Dong Hwi KIM , Ju Hyok KIM , Hong Seong KIM , Yong Cheol SA
发明人： Sang Yeul LEE , Han Choon LEE , Dong Hwi KIM , Ju Hyok KIM , Hong Seong KIM , Yong Cheol SA
IPC分类号： F28F1/10
CPC分类号： F28D1/0477 , F28F1/32 , F28F1/325 , F28F13/08 , F28F2210/08 , F28F2215/02 , F28F2215/04
摘要： A heat exchanger is provided. The heat exchanger includes at least one fin provided with a plurality of slits and a plurality of refrigerant tubes penetrating the fin. The refrigerant tubes include at least one front line tube and at least one rear line tube having a different diameter from the front line tube with reference to a fluid flow direction. The slits include at least one front line slit and at least one rear line slit having a difference width with reference to the fluid flow direction.
摘要翻译：提供热交换器。热交换器包括设有多个狭缝的至少一个翅片和穿透翅片的多个制冷剂管。制冷剂管相对于流体流动方向包括至少一个前线管和至少一个具有与前管的管直径不同的后管管。狭缝包括至少一个前线狭缝和至少一个相对于流体流动方向具有不同宽度的后线狭缝。

5. 发明授权

US08824221B2 Hybrid memory device, system including the same, and method of reading and writing data in the hybrid memory device 有权
标题翻译：混合存储装置，包含该混合存储装置的系统以及在混合存储装置中读取和写入数据的方法
公开(公告)号：US08824221B2
公开(公告)日：2014-09-02
申请号：US13616398
申请日：2012-09-14
申请人： Geun-Hee Cho , Duc Nguyen , Dong-Hwi Kim
发明人： Geun-Hee Cho , Duc Nguyen , Dong-Hwi Kim
IPC分类号： G11C7/00 , G11C11/00 , G11C5/04 , G11C7/10 , G11C14/00
CPC分类号： G11C5/04 , G06F12/0638 , G11C7/10 , G11C7/1045 , G11C11/005 , G11C14/0018 , Y02D10/13
摘要： A hybrid memory device is provided. The hybrid memory device includes a DRAM, a non-volatile memory and a control circuit. The control circuit selects one of output data of the DRAM and output data of the non-volatile memory according to a mode selecting signal and output the selected data. The control circuit outputs data requested to be output from the DRAM when the data requested to be output is in the DRAM, and may output the data requested to be output from the non-volatile memory when the data requested to be output is in the non-volatile memory. Accordingly, the hybrid memory device has a high speed in a read and write operation, and has low power consumption.
摘要翻译：提供了一种混合存储器件。混合存储器件包括DRAM，非易失性存储器和控制电路。控制电路根据模式选择信号选择DRAM的输出数据和非易失性存储器的输出数据之一，并输出所选择的数据。当请求输出的数据在DRAM中时，控制电路输出请求从DRAM输出的数据，并且当请求输出的数据为非数据时，可以输出请求从非易失性存储器输出的数据非易失存储器因此，混合存储装置在读取和写入操作中具有高速度，并且具有低功耗。

6. 发明申请

US20140043892A1 SEMICONDUCTOR MEMORY DEVICE HAVING VARIABLE RESISTANCE MEMORY AND OPERATING METHOD 有权
标题翻译：具有可变电阻记忆和操作方法的半导体存储器件
公开(公告)号：US20140043892A1
公开(公告)日：2014-02-13
申请号：US13954161
申请日：2013-07-30
申请人： WONSEOK LEE , SEONGHYUN JEON , YOUNGKUG MOON , DONG HWI KIM
发明人： WONSEOK LEE , SEONGHYUN JEON , YOUNGKUG MOON , DONG HWI KIM
IPC分类号： G11C11/16
CPC分类号： G11C11/1675 , G11C11/16 , G11C11/1653 , G11C11/1659 , G11C11/1673 , G11C11/1695
摘要： A semiconductor memory device includes a memory cell array of nonvolatile memory cells having a variable resistance element, and a conductor line array capable of generating a compensation magnetic field for the nonvolatile memory cells. A current driver selectively supplies current to conductive lines, a magnetic field sensor senses an applied external magnetic field and generates external magnetic field information, and a controller controls generation of the compensation magnetic field in response to the external magnetic field information.
摘要翻译：半导体存储器件包括具有可变电阻元件的非易失性存储单元的存储单元阵列和能够产生用于非易失性存储单元的补偿磁场的导线阵列。电流驱动器选择性地向导线提供电流，磁场传感器感测施加的外部磁场并产生外部磁场信息，并且控制器响应于外部磁场信息控制补偿磁场的产生。

7. 发明申请

US20090146987A1 PIXEL AND ORGANIC LIGHT EMITTING DISPLAY 失效
标题翻译：像素和有机发光显示
公开(公告)号：US20090146987A1
公开(公告)日：2009-06-11
申请号：US12327675
申请日：2008-12-03
申请人： Dong-Hwi Kim , Yang-Wan Kim
发明人： Dong-Hwi Kim , Yang-Wan Kim
IPC分类号： G06F3/038
CPC分类号： G09G3/3233 , G09G2300/0814 , G09G2300/0819 , G09G2310/0262 , G09G2320/045
摘要： A pixel at an ith pixel row (i is a natural number) includes an organic light emitting diode (OLED); a driving transistor for supplying a current to the OLED and a storage capacitor between a gate electrode of the driving transistor and an (i−1)th emission control line; and a compensating unit for controlling a voltage of the gate electrode of the driving transistor to compensate for deterioration of the OLED. The compensating unit includes: a first compensating unit transistor and a second compensating unit transistor between the OLED and a first power source; first and second feedback capacitors between a second node between the first and second compensating unit transistors and a first node between the gate electrode of the driving transistor and the storage capacitor; and a third compensating unit transistor coupled between a third node between the first and second feedback capacitors and a reference voltage source.
摘要翻译：第i个像素行（i是自然数）的像素包括有机发光二极管（OLED）; 用于向OLED提供电流的驱动晶体管和驱动晶体管的栅电极和第（i-1）个发射控制线之间的存储电容器; 以及用于控制驱动晶体管的栅电极的电压以补偿OLED的劣化的补偿单元。所述补偿单元包括：所述OLED和第一电源之间的第一补偿单元晶体管和第二补偿单元晶体管; 第一和第二反馈电容器，位于第一和第二补偿单元晶体管之间的第二节点和驱动晶体管的栅电极与存储电容器之间的第一节点; 以及耦合在所述第一和第二反馈电容器之间的第三节点与参考电压源之间的第三补偿单元晶体管。

8. 发明申请

US20090084129A1 HEAT EXCHANGER AND REFRIGERATION CYCLE APPARATUS HAVING THE SAME 审中-公开
标题翻译：热交换器和制冷循环装置
公开(公告)号：US20090084129A1
公开(公告)日：2009-04-02
申请号：US12201857
申请日：2008-08-29
申请人： Dong Hwi Kim , Yong Cheol Sa , Han Choon Lee , Sang Yeul Lee , Ju Hyok Kim , Hong Seong Kim
发明人： Dong Hwi Kim , Yong Cheol Sa , Han Choon Lee , Sang Yeul Lee , Ju Hyok Kim , Hong Seong Kim
IPC分类号： F25B1/00 , F28D1/04
CPC分类号： F28F1/325 , F25B39/00 , F25B2500/01 , F28D1/0477 , F28D1/05333 , F28D2021/007 , F28D2021/0071 , F28F13/08 , F28F2210/08 , F28F2215/02
摘要： A heat exchanger including a plurality of first refrigerant tubes, and a plurality of second refrigerant tubes separated from the plurality of first refrigerant tubes in an air flow direction. Further, a diameter of a respective refrigerant tube of the plurality of first refrigerant tubes is smaller than a diameter of a respective refrigerant tube of the plurality of second refrigerant tubes.
摘要翻译：一种热交换器，包括多个第一制冷剂管，以及多个第二制冷剂管，其沿空气流动方向与所述多个第一制冷剂管分离。此外，多个第一制冷剂管的各制冷剂管的直径小于多个第二制冷剂管的各制冷剂管的直径。

9. 发明授权

US09207949B2 Storage device comprising variable resistance memory and related method of operation 有权
标题翻译：存储装置包括可变电阻存储器和相关操作方法
公开(公告)号：US09207949B2
公开(公告)日：2015-12-08
申请号：US13951493
申请日：2013-07-26
申请人： Wonseok Lee , Seonghyun Jeon , Dong-Hwi Kim
发明人： Wonseok Lee , Seonghyun Jeon , Dong-Hwi Kim
IPC分类号： G06F9/00 , G06F9/44 , G11C7/20 , G11C29/02 , G11C29/04 , G11C29/44 , G11C11/16 , G11C13/00
CPC分类号： G06F9/4401 , G11C7/20 , G11C11/161 , G11C11/1653 , G11C11/1673 , G11C11/1675 , G11C13/004 , G11C29/028 , G11C2029/0407 , G11C2029/4402
摘要： A storage device includes a nonvolatile memory device including a variable resistance memory, and a controller configured to control the nonvolatile memory device. At a booting operation, the controller stores booting information in the variable resistance memory of the nonvolatile memory device. At a rebooting operation, the controller selectively performs a warm boot operation using the booting information stored in the variable resistance memory, based on a comparison result between a booting setting condition associated with the booting operation and a rebooting condition associated with the rebooting operation.
摘要翻译：存储装置包括包括可变电阻存储器的非易失性存储器件，以及被配置为控制非易失性存储器件的控制器。在启动操作时，控制器将引导信息存储在非易失性存储器件的可变电阻存储器中。在重新启动操作时，控制器基于与引导操作相关联的引导设置条件与与重新启动操作相关联的重新启动条件之间的比较结果，选择性地使用存储在可变电阻存储器中的引导信息进行热启动操作。

10. 发明授权

US08937615B2 Pixel and organic light emitting display using the same 有权
标题翻译：像素和有机发光显示器使用相同
公开(公告)号：US08937615B2
公开(公告)日：2015-01-20
申请号：US12854050
申请日：2010-08-10
申请人： Dong-Hwi Kim
发明人： Dong-Hwi Kim
IPC分类号： G09G3/32
CPC分类号： G09G3/3233 , G09G2300/043 , G09G2300/0819 , G09G2300/0852 , G09G2300/0861 , G09G2310/0262 , G09G2320/045
摘要： A pixel capable of compensating for the deterioration of an organic light emitting diode (OLED). The pixel includes an OLED coupled between first and second power sources, a pixel circuit including a driving transistor coupled between the first power source and the OLED and having a gate electrode coupled to a first node so that driving current corresponding to a voltage applied to the first node is supplied to the OLED, and a compensation circuit for controlling the voltage of the first node in accordance with deterioration of the OLED to compensate for the deterioration of the OLED. The compensation circuit includes first and second transistors coupled between the OLED and a third power source, first and second feedback capacitors coupled between the first node and a second node that is between the first transistor and the second transistor, and a third transistor coupled to the third power source.
摘要翻译：能够补偿有机发光二极管（OLED）劣化的像素。像素包括耦合在第一和第二电源之间的OLED，像素电路，包括耦合在第一电源和OLED之间的驱动晶体管，并且具有耦合到第一节点的栅电极，使得对应于施加到第一节点被提供给OLED，以及补偿电路，用于根据OLED的劣化来控制第一节点的电压以补偿OLED的劣化。补偿电路包括耦合在OLED和第三电源之间的第一和第二晶体管，耦合在第一节点和位于第一晶体管和第二晶体管之间的第二节点之间的第一和第二反馈电容器，以及耦合到第二晶体管的第三晶体管第三电源。

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