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1. 发明申请

US20130311054A1 SWING CONTROL SYSTEM FOR HYBRID CONSTRUCTION MACHINE 有权
标题翻译：混合建筑机械摆动控制系统
公开(公告)号：US20130311054A1
公开(公告)日：2013-11-21
申请号：US13993155
申请日：2010-12-15
申请人： Dong-Uk Choi
发明人： Dong-Uk Choi
IPC分类号： E02F9/20
CPC分类号： E02F9/2058 , E02F9/123 , E02F9/2095 , E02F9/265
摘要： A swing control system for a hybrid construction machine has a swing operating lever, an electric swing motor, a speed detection sensor which detects the rotary speed of a swing motor, a controller that calculates the driving speed of the swing motor by a swing operating signal created by the operation of the swing operating lever and by a detecting signal of the rotary speed, an inverter which drives the swing motor by a control signal from the controller, a swing inertia detector that detects the swing inertia of equipment and an inertia torque compensator which compares the torque compensation value in accordance with the equipment inertia, and outputs a calculated torque value for controlling the swing motor to the inverter.
摘要翻译：用于混合动力施工机械的回转控制系统具有回转操作杆，回转马达，检测回转马达的转速的速度检测传感器，通过摆动操作信号计算回转马达的驱动速度的控制器通过旋转操作杆的操作和通过旋转速度的检测信号产生的变频器，通过来自控制器的控制信号驱动回转马达的逆变器，检测设备的摆动惯量的摆动惯量检测器和惯性转矩补偿器其根据设备惯性比较转矩补偿值，并将用于控制回转马达的计算转矩值输出到逆变器。

2. 发明申请

US20130063893A1 ENERGY REPOSITORY DISCHARGE SYSTEM FOR CONSTRUCTION MACHINERY 审中-公开
标题翻译：建筑机械能源储存排放系统
公开(公告)号：US20130063893A1
公开(公告)日：2013-03-14
申请号：US13699460
申请日：2010-09-06
申请人： Chun-Han Lee , Dong-Uk Choi
发明人： Chun-Han Lee , Dong-Uk Choi
IPC分类号： H05K7/20
CPC分类号： H05K7/20 , H01C1/08
摘要： A discharge system of a stored energy for a construction machine is provided, which includes the energy storage, an electric discharge device discharging energy stored in the energy storage, and an energy cooling portion increasing the heat dissipation capacity of the electric discharge device by cooling heat generated in the electric discharge device for a time when the energy stored in the energy storage is discharged to the electric discharge device. Since the heat generated in the electric discharge device is cooled by a cooling device while the energy stored in the energy storage is discharged to the electric discharge device, the heat dissipation capacity of the electric discharge device is increased to shorten the discharge time. Also, the operation period of the cooling device is controlled in proportion to the residual voltage of the energy storage, and thus the cooling efficiency is maximized.
摘要翻译：提供一种用于建筑机械的储能的放电系统，其包括能量存储器，放电储存器中存储的能量的放电装置，以及通过冷却热量增加放电装置的散热能力的能量冷却部在存储在能量存储器中的能量被放电到放电装置的时间内，在放电装置中产生。由于在放电装置中产生的热量通过冷却装置冷却，而储存在能量存储器中的能量被放电到放电装置，所以放电装置的散热能力增加以缩短放电时间。此外，冷却装置的运转期间与能量储存器的剩余电压成比例地控制，从而冷却效率最大化。

3. 发明授权

US08044453B2 Non-volatile memory device with a charge trapping layer 有权
标题翻译：具有电荷捕获层的非易失性存储器件
公开(公告)号：US08044453B2
公开(公告)日：2011-10-25
申请号：US12318451
申请日：2008-12-30
申请人： Suk-Kang Sung , Choong-Ho Lee , Dong-Uk Choi , Hee-Soo Kang
发明人： Suk-Kang Sung , Choong-Ho Lee , Dong-Uk Choi , Hee-Soo Kang
IPC分类号： H01L29/792
CPC分类号： H01L27/11568
摘要： A non-volatile memory device includes field insulating layer patterns on a substrate to define an active region of the substrate, upper portions of the field insulating layer patterns protruding above an upper surface of the substrate, a tunnel insulating layer on the active region, a charge trapping layer on the tunnel insulating layer, a blocking layer on the charge trapping layer, first insulating layers on upper surfaces of the field insulating layer patterns, and a word line structure on the blocking layer and first insulating layers.
摘要翻译：非易失性存储器件包括在衬底上的场绝缘层图案，以限定衬底的有源区，场绝缘层图案的上部突出在衬底的上表面上，在有源区上的隧道绝缘层，隧道绝缘层上的电荷俘获层，电荷俘获层上的阻挡层，场绝缘层图案的上表面上的第一绝缘层，以及阻挡层和第一绝缘层上的字线结构。

4. 发明授权

US07884425B2 Non-volatile memory devices 有权
标题翻译：非易失性存储器件
公开(公告)号：US07884425B2
公开(公告)日：2011-02-08
申请号：US12257939
申请日：2008-10-24
申请人： Jong-Sun Sel , Jung-Dal Choi , Choong-Ho Lee , Ju-Hyuck Chung , Hee-Soo Kang , Dong-uk Choi
发明人： Jong-Sun Sel , Jung-Dal Choi , Choong-Ho Lee , Ju-Hyuck Chung , Hee-Soo Kang , Dong-uk Choi
IPC分类号： H01L21/70
CPC分类号： H01L23/485 , H01L21/76804 , H01L21/76816 , H01L27/11519 , H01L27/11521 , H01L27/11524 , H01L2924/0002 , H01L2924/00
摘要： In one embodiment, a semiconductor memory device includes a substrate having first and second active regions. The first active region includes a first source and drain regions and the second active region includes a second source and drain regions. A first interlayer dielectric is located over the substrate. A first conductive structure extends through the first interlayer dielectric. A first bit line is on the first interlayer dielectric. A second interlayer dielectric is on the first interlayer dielectric. A contact hole extends through the second and first interlayer dielectrics. The device includes a second conductive structure within the contact hole and extending through the first and second interlayer dielectrics. A second bit line is on the second interlayer dielectric. A width of the contact hole at a bottom of the second interlayer dielectric is less than or substantially equal to a width at a top of the second interlayer dielectric.
摘要翻译：在一个实施例中，半导体存储器件包括具有第一和第二有源区的衬底。第一有源区包括第一源区和漏区，第二有源区包括第二源区和漏区。第一层间电介质位于衬底上。第一导电结构延伸穿过第一层间电介质。第一位线位于第一层间电介质上。第二层间电介质在第一层间电介质上。接触孔延伸穿过第二和第一层间电介质。该装置包括接触孔内的第二导电结构并且延伸穿过第一和第二层间电介质。第二位线位于第二层间电介质上。第二层间电介质的底部处的接触孔的宽度小于或基本上等于第二层间电介质顶部的宽度。

5. 发明申请

US20100035398A1 Field effect transistor and method for manufacturing the same 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US20100035398A1
公开(公告)日：2010-02-11
申请号：US12588193
申请日：2009-10-07
申请人： Chang-Woo Oh , Dong-Gun Park , Dong-Won Kim , Dong-Uk Choi , Kyoung-Hwan Yeo
发明人： Chang-Woo Oh , Dong-Gun Park , Dong-Won Kim , Dong-Uk Choi , Kyoung-Hwan Yeo
IPC分类号： H01L21/336
CPC分类号： H01L29/0847 , H01L29/1054 , H01L29/665 , H01L29/66621 , H01L29/66636 , H01L29/66651 , H01L29/66795 , H01L29/7851 , H01L29/78687 , H01L29/7881
摘要： A field effect transistor (FET) and a method for manufacturing the same, in which the FET may include an isolation film formed on a semiconductor substrate to define an active region, and a gate electrode formed on a given portion of the semiconductor substrate. A channel layer may be formed on a portion of the gate electrode, with source and drain regions formed on either side of the channel layer so that boundaries between the channel layer and the source and drain regions of the FET may be perpendicular to a surface of the semiconductor substrate.
摘要翻译：场效应晶体管（FET）及其制造方法，其中FET可以包括形成在半导体衬底上以形成有源区的隔离膜，以及形成在半导体衬底的给定部分上的栅电极。沟道层可以形成在栅电极的一部分上，源极和漏极区形成在沟道层的任一侧上，使得沟道层与FET的源极和漏极区之间的边界可以垂直于半导体衬底。

6. 发明申请

US20090127633A1 NON-VOLATILE MEMORY DEVICES AND METHODS OF FORMING THE SAME 有权
标题翻译：非易失性存储器件及其形成方法
公开(公告)号：US20090127633A1
公开(公告)日：2009-05-21
申请号：US12257939
申请日：2008-10-24
申请人： Jong-Sun SEL , Jung-Dal CHOI , Choong-Ho LEE , Ju-Hyuck CHUNG , Hee-Soo KANG , Dong-uk CHOI
发明人： Jong-Sun SEL , Jung-Dal CHOI , Choong-Ho LEE , Ju-Hyuck CHUNG , Hee-Soo KANG , Dong-uk CHOI
IPC分类号： H01L27/088
CPC分类号： H01L23/485 , H01L21/76804 , H01L21/76816 , H01L27/11519 , H01L27/11521 , H01L27/11524 , H01L2924/0002 , H01L2924/00
摘要： In one embodiment, a semiconductor memory device includes a substrate having first and second active regions. The first active region includes a first source and drain regions and the second active region includes a second source and drain regions. A first interlayer dielectric is located over the substrate. A first conductive structure extends through the first interlayer dielectric. A first bit line is on the first interlayer dielectric. A second interlayer dielectric is on the first interlayer dielectric. A contact hole extends through the second and first interlayer dielectrics. The device includes a second conductive structure within the contact hole and extending through the first and second interlayer dielectrics. A second bit line is on the second interlayer dielectric. A width of the contact hole at a bottom of the second interlayer dielectric is less than or substantially equal to a width at a top of the second interlayer dielectric.
摘要翻译：在一个实施例中，半导体存储器件包括具有第一和第二有源区的衬底。第一有源区包括第一源区和漏区，第二有源区包括第二源区和漏区。第一层间电介质位于衬底上。第一导电结构延伸穿过第一层间电介质。第一位线位于第一层间电介质上。第二层间电介质在第一层间电介质上。接触孔延伸穿过第二和第一层间电介质。该装置包括接触孔内的第二导电结构并且延伸穿过第一和第二层间电介质。第二位线位于第二层间电介质上。第二层间电介质的底部处的接触孔的宽度小于或基本上等于第二层间电介质顶部的宽度。

7. 发明申请

US20050019969A1 Method for manufacturing thin film transistor array panel 有权
标题翻译：制造薄膜晶体管阵列面板的方法
公开(公告)号：US20050019969A1
公开(公告)日：2005-01-27
申请号：US10867811
申请日：2004-06-16
申请人： Won-Kie Chang , Jin-Wook Lee , Won Song , Jeong-Sik Yoo , You-Keun Kim , Dong-Uk Choi
发明人： Won-Kie Chang , Jin-Wook Lee , Won Song , Jeong-Sik Yoo , You-Keun Kim , Dong-Uk Choi
IPC分类号： G02F1/1368 , B08B7/00 , C23C16/44 , G02F1/136 , H01L21/205 , H01L21/3065 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786
CPC分类号： H01L27/12 , C23C16/4405 , H01L21/84 , H01L27/1214 , H01L27/124 , H01L27/1259
摘要： The present invention relates to a method of manufacturing a thin film transistor array panel and apparatus and more particularly to an apparatus containing an in-situ fluorine generation chamber.
摘要翻译：本发明涉及一种制造薄膜晶体管阵列面板及其装置的方法，更具体地涉及一种含有原位氟发生室的装置。

8. 发明授权

US09640286B2 Passive cooling apparatus of spent fuel pool 有权
公开(公告)号：US09640286B2
公开(公告)日：2017-05-02
申请号：US13593115
申请日：2012-08-23
申请人： Sang Jong Lee , Geol Woo Lee , Young Baek Kim , Jae Don Choi , Jae Il Lee , Sung Ju Cho , Jung Seon An , Dong Kyu Lee , Hye Jin Kim , Dong Uk Choi
发明人： Sang Jong Lee , Geol Woo Lee , Young Baek Kim , Jae Don Choi , Jae Il Lee , Sung Ju Cho , Jung Seon An , Dong Kyu Lee , Hye Jin Kim , Dong Uk Choi
IPC分类号： G21C19/07 , G21C15/18 , G21D1/04 , G21D3/04 , G21C15/24
CPC分类号： G21C19/07 , G21C15/18 , G21C15/24 , G21D1/04 , G21D3/04 , Y02E30/40
摘要： An apparatus for cooling a spent fuel pool having a heat exchanger includes a cooling water pool positioned above the spent fuel pool; a floating device configured to be elevated according to a water level of a cooling water in the spent fuel pool; and an emergency cooling water supply pipe configured to form a path through which the cooling water of the cooling water pool is moved to the spent fuel pool and configured to include a floating valve that opens or closes a flow passage of the cooling water in connection with the elevation of the floating device.

9. 发明授权

US09230761B2 Emergency stop system for a hybrid excavator 有权
标题翻译：混合动力挖掘机紧急停机系统
公开(公告)号：US09230761B2
公开(公告)日：2016-01-05
申请号：US13811105
申请日：2010-07-21
申请人： Ji-Yun Kim , Eui-Chul Kim , Dong-Uk Choi
发明人： Ji-Yun Kim , Eui-Chul Kim , Dong-Uk Choi
IPC分类号： H01H35/00 , E02F9/20 , E02F9/24 , E02F9/26 , B60W10/08 , B60W10/26 , B60W20/00
CPC分类号： H01H35/006 , B60W10/08 , B60W10/26 , B60W20/50 , B60W2540/04 , E02F9/2075 , E02F9/2091 , E02F9/24 , E02F9/267 , Y10T307/937
摘要： An emergency stop system for a hybrid excavator is provided, which includes an emergency switch and an emergency stop unit. In a normal operation state, a power supply that is applied from a power supply unit is provided to a hybrid controller and an engine controller, while when the emergency switch is pressed, the input power supply is intercepted to effectively stop the operation of the hybrid system in the case where equipment abnormality or an emergency situation occurs. Also, when the emergency switch is pressed, the power supply is applied to an emergency alarm unit and an energy discharge unit to notify an operator and neighboring persons of the equipment abnormality and emergency situation occurrence, and a hybrid power source vanishes completely.
摘要翻译：提供了一种用于混合动力挖掘机的紧急停止系统，其包括紧急开关和紧急停止单元。在正常运行状态下，从混合动力控制装置和发动机控制装置向电力供给装置供给电源，在按下紧急开关的同时，截取输入电源，有效地停止混合动作在发生设备异常或紧急情况的情况下的系统。此外，当按下紧急开关时，将电源施加到紧急报警单元和能量放电单元，以向操作者和邻近人通知设备异常和紧急情况发生，并且混合动力源完全消失。

10. 发明授权

US08969713B2 Method of manufacturing photoelectric conversion device 有权
标题翻译：制造光电转换装置的方法
公开(公告)号：US08969713B2
公开(公告)日：2015-03-03
申请号：US13359606
申请日：2012-01-27
申请人： Min-Seok Oh , Jung-Tae Kim , Nam-Kyu Song , Min Park , Yun-Seok Lee , Czang-Ho Lee , Myung-Hun Shin , Byoung-Kyu Lee , Yuk-Hyun Nam , Seung-Jae Jung , Mi-Hwa Lim , Joon-Young Seo , Dong-Uk Choi , Dong-Seop Kim , Byoung-June Kim
发明人： Min-Seok Oh , Jung-Tae Kim , Nam-Kyu Song , Min Park , Yun-Seok Lee , Czang-Ho Lee , Myung-Hun Shin , Byoung-Kyu Lee , Yuk-Hyun Nam , Seung-Jae Jung , Mi-Hwa Lim , Joon-Young Seo , Dong-Uk Choi , Dong-Seop Kim , Byoung-June Kim
IPC分类号： H01L31/0224 , H01L31/0376 , H01L31/068 , H01L31/078 , H01L31/0236 , H01L31/18 , H01L31/072 , H01L31/0368
CPC分类号： H01L31/022441 , H01L31/022425 , H01L31/022466 , H01L31/02363 , H01L31/03682 , H01L31/03762 , H01L31/068 , H01L31/0682 , H01L31/072 , H01L31/078 , H01L31/182 , Y02E10/52 , Y02E10/547 , Y02E10/548
摘要： Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer.
摘要翻译：这里公开了一种光电转换装置，其具有包括正面和背面的半导体衬底，形成在半导体衬底的正面上的保护层，形成在半导体衬底背面的第一非单晶半导体层，第一导电层，包括形成在第一非单晶半导体层的背面的第一部分上的第一杂质，以及第二导电层，其包含第一杂质和第二杂质，所述第二杂质形成在第一非杂质半导体层的背面的第二部分上第一非单晶半导体层。

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