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1. 发明授权

US08487356B2 Graphene device and method of manufacturing the same 有权
标题翻译：石墨烯装置及其制造方法
公开(公告)号：US08487356B2
公开(公告)日：2013-07-16
申请号：US13307370
申请日：2011-11-30
申请人： Jin seong Heo , Sun-ae Seo , Dong-chul Kim , Yun-sung Woo , Hyun-jong Chung
发明人： Jin seong Heo , Sun-ae Seo , Dong-chul Kim , Yun-sung Woo , Hyun-jong Chung
IPC分类号： H01L29/778 , H01L21/78 , H01L21/00
CPC分类号： H01L29/1606 , H01L29/42384 , H01L29/66742 , H01L29/7781 , H01L29/78645 , H01L29/78684
摘要： The graphene device may include an upper oxide layer on at least one embedded gate, and a graphene channel and a plurality of electrodes on the upper oxide layer. The at least one embedded gate may be formed on the substrate. The graphene channel may be formed on the plurality of electrodes, or the plurality of electrodes may be formed on the graphene channel.
摘要翻译：石墨烯装置可以包括在至少一个嵌入式栅极上的上部氧化物层，以及石墨烯通道和上部氧化物层上的多个电极。至少一个嵌入式栅极可以形成在衬底上。可以在多个电极上形成石墨烯通道，或者可以在石墨烯通道上形成多个电极。

2. 发明授权

US08350247B2 Resistive random access memory having a solid solution layer and method of manufacturing the same 有权
标题翻译：具有固溶层的电阻随机存取存储器及其制造方法
公开(公告)号：US08350247B2
公开(公告)日：2013-01-08
申请号：US11984277
申请日：2007-11-15
申请人： Myoung-jae Lee , Young-soo Park , Ran-ju Jung , Sun-ae Seo , Dong-chul Kim , Seung-eon Ahn
发明人： Myoung-jae Lee , Young-soo Park , Ran-ju Jung , Sun-ae Seo , Dong-chul Kim , Seung-eon Ahn
IPC分类号： H01L47/00
CPC分类号： H01L45/04 , H01L27/2436 , H01L45/1233 , H01L45/1273 , H01L45/146 , H01L45/16 , H01L45/1625
摘要： A resistive random access memory (RRAM) having a solid solution layer and a method of manufacturing the RRAM are provided. The RRAM includes a lower electrode, a solid solution layer on the lower electrode, a resistive layer on the solid solution layer, and an upper electrode on the resistive layer. The method of manufacturing the RRAM includes forming a lower electrode, forming a solid solution layer on the lower electrode, forming a resistive layer on the solid layer and forming an upper electrode on the resistive layer, wherein the RRAM is formed of a transition metal solid solution.
摘要翻译：提供了具有固溶层的电阻随机存取存储器（RRAM）和制造RRAM的方法。 RRAM包括下电极，下电极上的固溶层，固溶层上的电阻层和电阻层上的上电极。制造RRAM的方法包括形成下电极，在下电极上形成固溶层，在固体层上形成电阻层，在电阻层上形成上电极，其中RRAM由过渡金属固体解。

3. 发明授权

US08305989B2 Method for allocating pilots 有权
标题翻译：飞行员分配方法
公开(公告)号：US08305989B2
公开(公告)日：2012-11-06
申请号：US13361629
申请日：2012-01-30
申请人： Min Seok Noh , Seung Hee Han , Yeong Hyeon Kwon , Hyun Woo Lee , Dong Chul Kim
发明人： Min Seok Noh , Seung Hee Han , Yeong Hyeon Kwon , Hyun Woo Lee , Dong Chul Kim
IPC分类号： H04W4/00
CPC分类号： H04W72/04 , H04L1/0003 , H04L1/0009 , H04L1/0026 , H04L5/0016 , H04L5/0048 , H04W72/0413
摘要： This is provided a method for allocating pilots to a sub-frame. The sub-frame includes a plurality of blocks in time domain. The method includes allocating a data demodulation (DM) pilot used for demodulating data to two blocks spaced not contiguous with each other, and allocating a channel quality (CQ) pilot. System capacity can be increased, and degradation of performance incurred by a channel estimation error can be minimized.
摘要翻译：提供了一种用于将导频分配给子帧的方法。子帧在时域中包括多个块。该方法包括将用于解调数据的数据解调（DM）导频分配给彼此不相邻的两个块，并分配信道质量（CQ）导频。可以增加系统容量，并且可以最小化由信道估计误差引起的性能的劣化。

4. 发明申请

US20120147770A1 METHOD FOR ALLOCATING PILOTS 有权
标题翻译：分配桩的方法
公开(公告)号：US20120147770A1
公开(公告)日：2012-06-14
申请号：US13361629
申请日：2012-01-30
申请人： Min Seok Noh , Seung Hee Han , Yeong Hyeon Kwon , Hyun Woo Lee , Dong Chul Kim
发明人： Min Seok Noh , Seung Hee Han , Yeong Hyeon Kwon , Hyun Woo Lee , Dong Chul Kim
IPC分类号： H04W24/02
CPC分类号： H04W72/04 , H04L1/0003 , H04L1/0009 , H04L1/0026 , H04L5/0016 , H04L5/0048 , H04W72/0413
摘要： This is provided a method for allocating pilots to a sub-frame. The sub-frame includes a plurality of blocks in time domain. The method includes allocating a data demodulation (DM) pilot used for demodulating data to two blocks spaced not contiguous with each other, and allocating a channel quality (CQ) pilot. System capacity can be increased, and degradation of performance incurred by a channel estimation error can be minimized.
摘要翻译：提供了一种用于将导频分配给子帧的方法。子帧在时域中包括多个块。该方法包括将用于解调数据的数据解调（DM）导频分配给彼此不相邻的两个块，并分配信道质量（CQ）导频。可以增加系统容量，并且可以最小化由信道估计误差引起的性能的劣化。

5. 发明申请

US20120075008A1 GRAPHENE DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：石墨装置及其制造方法
公开(公告)号：US20120075008A1
公开(公告)日：2012-03-29
申请号：US13307370
申请日：2011-11-30
申请人： Jin seong Heo , Sun-ae Seo , Dong-chul Kim , Yun-sung Woo , Hyun-jong Chung
发明人： Jin seong Heo , Sun-ae Seo , Dong-chul Kim , Yun-sung Woo , Hyun-jong Chung
IPC分类号： H03K3/01 , H01L21/336 , H01L29/12
CPC分类号： H01L29/1606 , H01L29/42384 , H01L29/66742 , H01L29/7781 , H01L29/78645 , H01L29/78684
摘要： The graphene device may include an upper oxide layer on at least one embedded gate, and a graphene channel and a plurality of electrodes on the upper oxide layer. The at least one embedded gate may be formed on the substrate. The graphene channel may be formed on the plurality of electrodes, or the plurality of electrodes may be formed on the graphene channel.
摘要翻译：石墨烯装置可以包括在至少一个嵌入式栅极上的上部氧化物层，以及石墨烯通道和上部氧化物层上的多个电极。至少一个嵌入式栅极可以形成在衬底上。可以在多个电极上形成石墨烯通道，或者可以在石墨烯通道上形成多个电极。

6. 发明授权

US07994815B2 Cross-point latch and method of operating the same 有权
标题翻译：交叉点闩锁及其操作方法
公开(公告)号：US07994815B2
公开(公告)日：2011-08-09
申请号：US11902416
申请日：2007-09-21
申请人： Hyun-jong Chung , Sun-ae Seo , Chang-won Lee , Dae-young Jeon , Ran-ju Jung , Dong-chul Kim , Ji-young Bae
发明人： Hyun-jong Chung , Sun-ae Seo , Chang-won Lee , Dae-young Jeon , Ran-ju Jung , Dong-chul Kim , Ji-young Bae
IPC分类号： H03K19/173
CPC分类号： H03K3/40 , G11C13/00 , G11C13/0007 , G11C2213/32 , G11C2213/77
摘要： Provided is a cross-point latch and a method of operating the cross-point latch. The cross-point latch includes a signal line, two control lines crossing the signal line, and unipolar switches disposed at crossing points between the signal line and the control lines.
摘要翻译：提供了交叉点锁存器和操作交叉点锁存器的方法。交叉点锁存器包括信号线，与信号线交叉的两个控制线，以及设置在信号线与控制线之间的交叉点处的单极开关。

7. 发明申请

US20110092054A1 Methods for fixing graphene defects using a laser beam and methods of manufacturing an electronic device 审中-公开
标题翻译：使用激光束固定石墨烯缺陷的方法和制造电子器件的方法
公开(公告)号：US20110092054A1
公开(公告)日：2011-04-21
申请号：US12805982
申请日：2010-08-27
申请人： Sun-ae Seo , Dong-chul Kim , Yun-sung Woo , Hyun-jong Chung , Jin-seong Heo
发明人： Sun-ae Seo , Dong-chul Kim , Yun-sung Woo , Hyun-jong Chung , Jin-seong Heo
IPC分类号： H01L21/26
CPC分类号： H01L29/1606 , H01L21/268 , H01L29/66742 , H01L29/778 , H01L29/78684
摘要： Methods of fixing graphene using a laser beam and methods of manufacturing an electronic device are provided, the method of fixing graphene includes fixing a defect of a graphene nanoribbon by irradiating the laser beam onto the graphene nanoribbon.
摘要翻译：提供了使用激光束固定石墨烯的方法和制造电子器件的方法，固定石墨烯的方法包括通过将激光照射到石墨烯纳米棒上来固定石墨烯纳米纤维的缺陷。

8. 发明授权

US07872249B2 Nonvolatile memory device and methods of operating and fabricating the same 有权
标题翻译：非易失存储器件及其操作和制造方法
公开(公告)号：US07872249B2
公开(公告)日：2011-01-18
申请号：US11723018
申请日：2007-03-15
申请人： Yoon-dong Park , Myoung-jae Lee , Dong-chul Kim , Seung-eon Ahn
发明人： Yoon-dong Park , Myoung-jae Lee , Dong-chul Kim , Seung-eon Ahn
IPC分类号： H01L47/00
CPC分类号： H01L27/24 , G11C13/0004 , G11C13/0007 , G11C13/003 , G11C13/0069 , G11C16/0475 , G11C2013/0073 , G11C2213/31 , G11C2213/32 , G11C2213/71 , G11C2213/76
摘要： Provided is a nonvolatile memory device and method of operating and fabricating the same for higher integration and higher speed, while allowing for a lower operating current. The nonvolatile memory device may include a semiconductor substrate. Resistive layers each storing a variable resistive state may be formed on the surface of the semiconductor substrate. Buried electrodes may be formed on the semiconductor substrate under the resistive layers and may connect to the resistive layers. Channel regions may be formed on the surface of the semiconductor substrate and connect adjacent resistive layers to each other, but not to the buried electrodes. Gate insulating layers may be formed on the channel regions of the semiconductor substrate. Gate electrodes may be formed on the gate insulating layers and extend over the resistive layers.
摘要翻译：提供了一种非易失性存储器件及其操作和制造方法，用于更高的集成度和更高的速度，同时允许较低的工作电流。非易失性存储器件可以包括半导体衬底。各自存储可变电阻状态的电阻层可以形成在半导体衬底的表面上。掩埋电极可以形成在半导体衬底下的电阻层下，并且可以连接到电阻层。通道区域可以形成在半导体衬底的表面上，并且将相邻的电阻层彼此连接，而不是埋入电极。栅极绝缘层可以形成在半导体衬底的沟道区上。栅电极可以形成在栅极绝缘层上并在电阻层上延伸。

9. 发明申请

US20080284481A1 Cross-point latch and method of operating the same 有权
标题翻译：交叉点闩锁及其操作方法
公开(公告)号：US20080284481A1
公开(公告)日：2008-11-20
申请号：US11902416
申请日：2007-09-21
申请人： Hyun-Jong Chung , Sun-ao Seo , Chang-won Lee , Dao-young Jeon , Ran-ju Jung , Dong-chul Kim , Ji-young Bae
发明人： Hyun-Jong Chung , Sun-ao Seo , Chang-won Lee , Dao-young Jeon , Ran-ju Jung , Dong-chul Kim , Ji-young Bae
IPC分类号： H03K3/01
CPC分类号： H03K3/40 , G11C13/00 , G11C13/0007 , G11C2213/32 , G11C2213/77
摘要： Provided is a cross-point latch and a method of operating the cross-point latch. The cross-point latch includes a signal line, two control lines crossing the signal line, and unipolar switches disposed at crossing points between the signal line and the control lines.
摘要翻译：提供了交叉点锁存器和操作交叉点锁存器的方法。交叉点锁存器包括信号线，与信号线交叉的两个控制线，以及设置在信号线与控制线之间的交叉点处的单极开关。

10. 发明授权

US07396877B2 Chemical resistant thermoplastic resin composition 有权
标题翻译：耐化学性热塑性树脂组合物
公开(公告)号：US07396877B2
公开(公告)日：2008-07-08
申请号：US11248527
申请日：2005-10-12
申请人： Sung-je Cha , Sung-tae Ahn , Dong-chul Kim , Yun-kyoung Cho
发明人： Sung-je Cha , Sung-tae Ahn , Dong-chul Kim , Yun-kyoung Cho
IPC分类号： C08L51/04
CPC分类号： C08L25/12 , C08L23/08 , C08L33/06 , C08L55/02 , C08L2666/24 , C08L2666/02
摘要： Disclosed is a resin composition comprising (A) 100 parts by weight of a base resin comprising a rubber-modified styrene-containing graft copolymer and a styrene-containing copolymer; (B) 0.5-8 parts by weight of an acrylic rubber graft copolymer resin having an average particle size of 0.1-0.5 μm; and (C) 0.5-8 parts by weight of a graft copolymer resin comprising an ethylene α-olefinic copolymer rubber having an average particle size of 0.1-0.8 μm. The thermoplastic resin composition of the present invention greatly improves chemical resistance to insulating materials, such as urethane foam, or foaming agent compounds, such as freon (CFC-11, HCFC-141b, HFC-245fa, HFC-245eb, HFC-245ca, HFC-356mffm) and cyclopentane and offers superior impact strength, whiteness and processability. It can be useful for extrusion sheets of refrigerator interiors.
摘要翻译：公开了一种树脂组合物，其包含（A）100重量份的包含橡胶改性的含苯乙烯的接枝共聚物和含苯乙烯的共聚物的基础树脂; （B）0.5-8重量份平均粒径为0.1-0.5μm的丙烯酸橡胶接枝共聚物树脂; 和（C）0.5-8重量份的包含平均粒径为0.1-0.8μm的乙烯α-烯烃共聚物橡胶的接枝共聚物树脂。本发明的热塑性树脂组合物大大提高了对聚氨酯泡沫等绝缘材料的耐化学性，或氟利昂（CFC-11，HCFC-141b，HFC-245fa，HFC-245eb，HFC-245ca， HFC-356mffm）和环戊烷，具有优异的冲击强度，白度和加工性能。它可用于冰箱内部的挤出片材。

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