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1. 发明授权

US4928003A Charge-coupled device for detecting spatial variation in the intensity of electromagnetic radiation 失效
标题翻译：用于检测电磁辐射强度的空间变化的电荷耦合器件
公开(公告)号：US4928003A
公开(公告)日：1990-05-22
申请号：US219954
申请日：1988-07-15
申请人： Denis L. Heidtmann , Morley M. Blouke
发明人： Denis L. Heidtmann , Morley M. Blouke
IPC分类号： H01L27/14 , H01L27/148 , H01L31/09 , H01L31/16
CPC分类号： H01L27/14825
摘要： A charge-coupled device for detecting spatial variation in the intensity of electromagnetic radiation comprises a body of semiconductor material that responds to electromagnetic radiation in a given spectral region by generating charge carriers. The body of semiconductor material has first and second sense volumes that are isolated from each other with respect to diffusion of charge carriers. A sense electrode structure overlies the sense volumes. First and second transfer regions are in communication with the first and second sense volumes respectively, and a transfer electrode structure overlies the transfer regions. A readout region has first and second zones in communication with the first and second transfer regions respectively and is connected to an output node. Charge can be accumulated in the sense volumes over an integration period and the resulting charge samples can be shifted separately through the transfer regions and applied to the output node.
摘要翻译：用于检测电磁辐射强度的空间变化的电荷耦合器件包括通过产生电荷载体来响应给定光谱区域中的电磁辐射的半导体材料体。半导体材料的主体具有相对于电荷载体的扩散彼此隔离的第一和第二感测体积。感测电极结构覆盖感测体积。第一传送区域和第二传送区域分别与第一和第二感测体积连通，并且传输电极结构覆盖在传送区域上。读出区域具有分别与第一和第二传送区域通信的第一和第二区域，并且连接到输出节点。可以在积分周期内在感测体积中积累电荷，并且所得到的电荷样本可以通过转移区域单独移动并施加到输出节点。

2. 发明授权

US4803531A Imaging charge-coupled device having an all parallel output 失效
标题翻译：具有全并行输出的成像电荷耦合器件
公开(公告)号：US4803531A
公开(公告)日：1989-02-07
申请号：US98574
申请日：1987-09-18
申请人： Larry D. Riley , Denis L. Heidtmann
发明人： Larry D. Riley , Denis L. Heidtmann
IPC分类号： H01L21/339 , H01L27/148 , H01L29/762 , H01L29/768 , H04N5/372 , H01L29/78 , G11C19/28
CPC分类号： H01L29/76816 , H01L27/14831
摘要： A charge-coupled device comprises a substrate of semiconductor material having at least two buried channels formed therein. At least two sets of clock electrodes overlie the buried channels. By application of appropriate potentials to the clock electrodes, an electrical charge may be propagated in controlled fashion along each buried channel towards its output end. A floating diffusion is formed at the output end of each buried channel for receiving charge propagated along the channel. Output transistors are assoicated with the buried channels respectively and each has a control electrode connected to the floating diffusion of the associated channel. An output diffusion is located between the floating diffusions and the control electrodes of the transistors and extends perpendicular to the channels. A reset gate is associated with each channel and lies over the substrate between the floating diffusion of the associated channel and the output diffusion, so that by application of a predetermined potential to the reset gate a conductive channel is formed in the substrate between the floating diffusion of the associated channel and the output diffusion. A reset bus extends over the substrate on the opposite side of the floating diffusions from the reset gate and has a bus extension which extends over the substrate between the floating diffusions and is connected to the reset gates.
摘要翻译：电荷耦合器件包括其中形成有至少两个掩埋沟道的半导体材料的衬底。至少两组时钟电极覆盖在埋入的通道上。通过向时钟电极施加适当的电位，可以以受控的方式沿着每个掩埋通道向其输出端传播电荷。在每个掩埋沟道的输出端形成浮动扩散，用于接收沿着沟道传播的电荷。输出晶体管分别与埋入通道相配，并且每个具有连接到相关通道的浮动扩散的控制电极。输出扩散位于晶体管的浮置扩散和控制电极之间，垂直于通道延伸。复位栅极与每个通道相关联，并且位于衬底之间的相关通道的浮动扩散与输出扩散之间，使得通过向复位栅施加预定电位，导体通道形成在衬底中的浮动扩散的相关通道和输出扩散。复位总线在浮动扩散的相对侧上的衬底上延伸，并且具有在浮置扩散之间在衬底上延伸并连接到复位门的总线延伸部。

3. 发明授权

US4892842A Method of treating an integrated circuit 失效
标题翻译：处理集成电路的方法
公开(公告)号：US4892842A
公开(公告)日：1990-01-09
申请号：US114884
申请日：1987-10-29
申请人： Brian L. Corrie , Morley M. Blouke , Denis L. Heidtmann
发明人： Brian L. Corrie , Morley M. Blouke , Denis L. Heidtmann
IPC分类号： H01L21/306 , H01L21/304 , H01L21/339 , H01L21/764 , H01L23/522 , H01L27/148 , H01L29/762
CPC分类号： H01L21/764 , H01L23/522 , H01L27/14831 , H01L2924/0002 , Y10S438/977
摘要： An integrated circuit formed in a semiconductor die which has at least two distinct functional regions is treated by mounting the die by way of its front face on a support member, and subsequently removing die material by way of its back face so as to physically separate the functional regions of the die from each other.

4. 发明授权

US4862235A Electrode structure for a corner turn in a series-parallel-series charge coupled device 失效
标题翻译：串联并联串联电荷耦合器件的转角电极结构
公开(公告)号：US4862235A
公开(公告)日：1989-08-29
申请号：US213805
申请日：1988-06-30
申请人： Raymond Hayes , Denis L. Heidtmann
发明人： Raymond Hayes , Denis L. Heidtmann
IPC分类号： H01L29/762 , H01L21/339 , H01L29/423
CPC分类号： H01L29/42396
摘要： A CCD is fabricated from an intermediate product comprising a body of semiconductor material having a channel region of a first conductivity type bounded by a substrate region of a second, opposite conductivity type and a surface of the body, and first and second gates overlying the surface and spaced from each other. The method comprises introducing a dopant into the channel region by way of the surface of the body. The first and second gates are opaque with respect to the dopant. The dopant is such that it forms a zone within the channel region, beneath the space between the first and second gates, and the zone is of the first conductivity type and is of a higher doping concentration than other portions of the channel region. A third gate is formed over the surface of the body of semiconductor material, the third gate being at least partially disposed across the space between the first and second gates.

5. 发明授权

US4725872A Fast channel single phase buried channel CCD 失效
公开(公告)号：US4725872A
公开(公告)日：1988-02-16
申请号：US691605
申请日：1985-02-25
申请人： Morley M. Blouke , Denis L. Heidtmann
发明人： Morley M. Blouke , Denis L. Heidtmann
IPC分类号： H01L29/762 , H01L21/339 , H01L29/10 , H01L29/76 , H01L29/768 , H01L29/772 , H01L29/78 , H01L29/04 , H01L29/62
CPC分类号： H01L29/76833 , H01L29/1091
摘要： A single phase, buried channel charge coupled device has a high conductivity layer overlying the pinned regions thereof and extending to the channel stop regions, thereby facilitating the transfer of charge carriers between the channel stop regions and the pinned regions in order that the potential profile underlying said pinned regions may be more readily maintained. Extension of that high conductivity layer over the channel gate electrodes also facilitates the transmission of clocking voltages to the channel gate electrodes and allows the device to operate with decreased power losses.

6. 发明授权

US06410905B1 CCD with enhanced output dynamic range 失效
标题翻译： CCD具有增强的输出动态范围
公开(公告)号：US06410905B1
公开(公告)日：2002-06-25
申请号：US09466420
申请日：1999-12-17
申请人： Denis L Heidtmann , Morley M Blouke , Taner Dosluoglu
发明人： Denis L Heidtmann , Morley M Blouke , Taner Dosluoglu
IPC分类号： H01L3100
CPC分类号： H01L29/76883 , H01L29/76866
摘要： A CCD has a floating diffusion for receiving charge packets to be sensed, a reset diffusion connected to a reference potential level and a reset channel region between the floating diffusion and the reset diffusion. A first reset gate is positioned over a first segment of the reset channel region for controlling the conductivity of the first segment in accordance with the potential of the first reset gate, and a second reset gate is positioned over a second segment of the reset channel region between the first reset gate and the reset diffusion for controlling the conductivity of the second segment in accordance with the potential of the second reset gate. Each reset gate has a first state in which the respective segment of the reset channel region is conductive and a second state in which the respective segment of the reset channel region is not conductive, whereby a charge packet entering the floating diffusion sees a relatively small effective capacitance when the first reset gate is in the second state and sees a relatively large effective capacitance when the first reset gate is in the first state and the second reset gate is in the second state. A reset gate controller controls dynamically the states of the first and second reset gates in accordance with predicted size of a charge packet entering the floating diffusion.
摘要翻译： CCD具有用于接收要感测的电荷分组的浮动扩散，连接到参考电位电平的复位扩散和浮置扩散与复位扩散之间的复位通道区域。第一复位门位于复位沟道区的第一段之上，用于根据第一复位栅的电位控制第一段的导电性，并且第二复位栅位于复位沟道区的第二段上在第一复位栅极和复位扩散之间，用于根据第二复位栅极的电位来控制第二段的电导率。每个复位栅极具有第一状态，其中复位沟道区域的各个区段是导通的，并且第二状态，其中复位沟道区域的各个区段不导电，由此进入浮动扩散的电荷分组看起来相对较小的有效当第一复位栅极处于第二状态时，当第一复位栅极处于第一状态并且第二复位栅极处于第二状态时，其具有相对较大的有效电容。复位门控制器根据进入浮动扩散的电荷分组的预测大小动态地控制第一和第二复位门的状态。

7. 发明授权

US4916306A Device for detecting spatial variation in the intensity of electromagnetic radiation 失效
标题翻译：用于检测电磁辐射强度的空间变化的装置
公开(公告)号：US4916306A
公开(公告)日：1990-04-10
申请号：US219024
申请日：1988-07-14
申请人： Denis L. Heidtmann , Morley M. Blouke
发明人： Denis L. Heidtmann , Morley M. Blouke
IPC分类号： H01L27/14 , H01L27/148 , H01L31/09 , H01L31/16
CPC分类号： H01L27/14825
摘要： A device for detecting spatial variation in the intensity of electromagnetic radiation in a given spectral region comprises a body of semiconductor material that responds to electromagnetic radiation in the given spectral region by generating charge carriers. The body of semiconductor material has first and second charge collection regions separated by a barrier region that forms a potential barrier to the charge carriers in the charge collection regions. The device also comprises an electrode structure for establishing a predetermined potential in the charge collection regions, whereby charge carriers can be accumulated in the charge collection regions, and first and second output devices connected to the first and second charge collection regions respectively for extracting charge therefrom.
摘要翻译：用于检测给定光谱区域中的电磁辐射强度的空间变化的装置包括通过产生电荷载体来响应给定光谱区域中的电磁辐射的半导体材料体。半导体材料体具有第一和第二电荷收集区域，该屏障区域形成对电荷收集区域中的载流子的势垒。该装置还包括用于在电荷收集区域中建立预定电位的电极结构，由此电荷载流子可以累积在电荷收集区域中，以及第一和第二输出装置分别连接到第一和第二电荷收集区域以从其中提取电荷。

8. 发明授权

US4906584A Fast channel single phase buried channel CCD 失效
标题翻译：快速通道单相埋通道CCD
公开(公告)号：US4906584A
公开(公告)日：1990-03-06
申请号：US112903
申请日：1987-10-26
申请人： Morley M. Blouke , Denis L. Heidtmann
发明人： Morley M. Blouke , Denis L. Heidtmann
IPC分类号： H01L29/10 , H01L29/768
CPC分类号： H01L29/76833 , H01L29/1091
摘要： A single phase, buried channel charge coupled device has a high conductivity layer overlying the pinned regions thereof and extending to the channel stop regions, thereby facilitating the transfer of charge carriers between the channel stop regions and the pinned regions in order that the potential profile underlying said pinned regions may be more readily maintained. Extension of that high conductivity layer over the channel gate electrodes also facilitates the transmission of clocking voltages to the channel gate electrodes and allows the device to operate with decreased power losses.
摘要翻译：单相掩埋沟道电荷耦合器件具有覆盖其引脚区域并延伸到沟道停止区域的高导电性层，从而有助于在沟道停止区域和被钉扎区域之间传输电荷载体，所述被钉扎区域可以更容易地保持。通道栅电极上的这种高电导率层的延伸也有助于将时钟电压传输到通道栅电极，并允许器件以降低的功率损耗来工作。

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