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1. 发明授权

US08536526B2 Methods of operating a nanoprober to electrically probe a device structure of an integrated circuit 失效
标题翻译：操作纳米光栅以电探测集成电路的器件结构的方法
公开(公告)号：US08536526B2
公开(公告)日：2013-09-17
申请号：US12344651
申请日：2008-12-29
申请人： Paul D. Bell , Mark E. Masters , David S. Patrick
发明人： Paul D. Bell , Mark E. Masters , David S. Patrick
IPC分类号： G01N23/00
CPC分类号： H01J37/268 , G01R31/307 , H01J37/265 , H01J2237/043 , H01J2237/24564 , H01J2237/24592
摘要： Methods for nanoprobing a device structure of an integrated circuit. The method may include scanning a primary charged particle beam across a first region of the device structure with at least one probe proximate to the first region and a second region of the device structure is masked from the primary charged particle beam. The method may further include collecting secondary electrons emitted from the first region of the device structure and the at least one probe to form a secondary electron image. The secondary electron image includes the first region and the at least one probe as imaged portions and the second region as a non-imaged portion. Alternatively, the second region may be scanned by the charged particle beam at a faster scan rate than the first region so that the second region is also an imaged portion of the secondary electron image.
摘要翻译：用于纳米结构的集成电路的器件结构的方法。该方法可以包括利用靠近第一区域的至少一个探针扫描穿过器件结构的第一区域的初级带电粒子束，并且器件结构的第二区域被从初级带电粒子束掩蔽。该方法还可以包括收集从器件结构的第一区域发射的二次电子和至少一个探针以形成二次电子图像。二次电子图像包括作为成像部分的第一区域和至少一个探针，以及作为非成像部分的第二区域。或者，第二区域可以以比第一区域更快的扫描速率被带电粒子束扫描，使得第二区域也是二次电子图像的成像部分。

2. 发明申请

US20100163727A1 METHODS OF OPERATING A NANOPROBER TO ELECTRICALLY PROBE A DEVICE STRUCTURE OF AN INTEGRATED CIRCUIT 失效
标题翻译：操作纳米电极的方法来电子地探测集成电路的器件结构
公开(公告)号：US20100163727A1
公开(公告)日：2010-07-01
申请号：US12344651
申请日：2008-12-29
申请人： Paul D. Bell , Mark E. Masters , David S. Patrick
发明人： Paul D. Bell , Mark E. Masters , David S. Patrick
IPC分类号： G01N23/00
CPC分类号： H01J37/268 , G01R31/307 , H01J37/265 , H01J2237/043 , H01J2237/24564 , H01J2237/24592
摘要： Methods for nanoprobing a device structure of an integrated circuit. The method may include scanning a primary charged particle beam across a first region of the device structure with at least one probe proximate to the first region and a second region of the device structure is masked from the primary charged particle beam. The method may further include collecting secondary electrons emitted from the first region of the device structure and the at least one probe to form a secondary electron image. The secondary electron image includes the first region and the at least one probe as imaged portions and the second region as a non-imaged portion. Alternatively, the second region may be scanned by the charged particle beam at a faster scan rate than the first region so that the second region is also an imaged portion of the secondary electron image.
摘要翻译：用于纳米结构的集成电路的器件结构的方法。该方法可以包括利用靠近第一区域的至少一个探针扫描穿过器件结构的第一区域的初级带电粒子束，并且器件结构的第二区域被从初级带电粒子束掩蔽。该方法还可以包括收集从器件结构的第一区域发射的二次电子和至少一个探针以形成二次电子图像。二次电子图像包括作为成像部分的第一区域和至少一个探针，以及作为非成像部分的第二区域。或者，第二区域可以以比第一区域更快的扫描速率被带电粒子束扫描，使得第二区域也是二次电子图像的成像部分。

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