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1. 发明申请

US20180233796A1 SLOT COUPLED DIRECTIONAL COUPLER AND DIRECTIONAL FILTERS IN MULTILAYER SUBSTRATE 审中-公开
公开(公告)号：US20180233796A1
公开(公告)日：2018-08-16
申请号：US15666637
申请日：2017-08-02
申请人： Yifei Zhang , Shouyuan Shi , Richard Martin , Dennis Prather
发明人： Yifei Zhang , Shouyuan Shi , Richard Martin , Dennis Prather
IPC分类号： H01P1/212 , H01P5/18
CPC分类号： H01P1/212 , H01P5/184 , H01P5/185 , H01P5/187
摘要： Traveling-wave directional filters (DFs) with multiple coupling slots are disclosed. A traveling-wave directional filter may include two terminating conductive strips in a top circuit layer of a substrate, a loop resonator in a bottom layer of a substrate, and a shared ground plane. Coupling slots in the ground plane may couple the conductive strips via the loop resonator.

2. 发明申请

US20110170820A1 EO POLYMER-BASED DUAL SLOT WAVEGUIDE MODULATORS 审中-公开
标题翻译： EO聚合物双槽波长调制器
公开(公告)号：US20110170820A1
公开(公告)日：2011-07-14
申请号：US12939408
申请日：2010-11-04
申请人： DENNIS PRATHER , Shouyuan Shi
发明人： DENNIS PRATHER , Shouyuan Shi
IPC分类号： G02F1/035 , G02F1/00
CPC分类号： G02F1/065 , G02F1/0356 , G02F2202/022
摘要： Electro-optic modulators are disclosed. An electro-optic modulator comprises an electro-optic polymer layer, semiconductor layers, ferroelectric material layers, and electrodes. The semiconductor layers are positioned on each surface of the electro-optic polymer layer. The refractive index of the semiconductor layers in the optical and RF domains is higher than the refractive index of the electro-optic polymer layer in the optical and RF domains. The ferroelectric material layers are positioned on each semiconductor layer opposite the electro-optic polymer layer. The refractive index of the ferroelectric material layers in the RF domain is higher than the refractive indices of both the electro-optic polymer layer and the semiconductor layers in the RF domain. The refractive index of the ferroelectric material layers in the optical domain is lower than the refractive index of the semiconductor layer in the optical domain. The electrodes are positioned on each ferroelectric material layer opposite the semiconductor layer.
摘要翻译：公开了电光调制器。电光调制器包括电光聚合物层，半导体层，铁电材料层和电极。半导体层位于电光聚合物层的每个表面上。光学和RF域中半导体层的折射率高于光学和RF域中电光聚合物层的折射率。铁电材料层位于与电光聚合物层相对的每个半导体层上。 RF域中铁电材料层的折射率高于RF域中的电光聚合物层和半导体层的折射率。光畴中铁电材料层的折射率低于光学域中半导体层的折射率。电极位于与半导体层相对的每个铁电材料层上。

3. 发明申请

US20070285803A1 Electromagnetic/optical tweezers using a full 3D negative-refraction flat lens 失效
$Electromagnetic/optical tweezers using a full 3D negative-refraction flat lens$
标题翻译：使用全3D负折射平面透镜的电磁/光镊
公开(公告)号：US20070285803A1
公开(公告)日：2007-12-13
申请号：US11786670
申请日：2007-04-12
申请人： Dennis Prather , Zhaolin Lu , Janusz Murakowski , Shouyuan Shi , Garrett Schneider
发明人： Dennis Prather , Zhaolin Lu , Janusz Murakowski , Shouyuan Shi , Garrett Schneider
IPC分类号： G21K1/06
CPC分类号： G21K1/006 , Y10S977/901
摘要： Described herein are electromagnetic traps or tweezers. Desired results are achieved by combining two recently developed techniques, 3D negative refraction flat lenses (3DNRFLs) and optical tweezers. The very unique advantages of using 3DNRFLs for electromagnetic traps have been demonstrated. Super-resolution and short focal distance of the flat lens result in a highly focused and strongly convergent beam, which is a key requirement for a stable and accurate electromagnetic trap. The translation symmetry of 3DNRFL provides translation-invariance for imaging, which allows an electromagnetic trap to be translated without moving the lens, and permits a trap array by using multiple sources with a single lens.
摘要翻译：这里描述的是电磁陷阱或镊子。期望的结果是通过组合两种最近开发的技术，3D负折射平面透镜（3DNRFL）和光学镊子来实现的。已经证明了将3DNRFL用于电磁陷阱的独特优点。平面透镜的超分辨率和短焦距导致高度聚焦和强烈收敛的光束，这是稳定和精确的电磁阱的关键要求。 3DNRFL的平移对称性为成像提供了平移不变性，允许在不移动透镜的情况下平移电磁阱，并通过使用单个透镜使用多个源来允许陷阱阵列。

4. 发明申请

US20060099534A1 Method for fabricating optical devices in photonic crystal structures 失效
标题翻译：在光子晶体结构中制造光器件的方法
公开(公告)号：US20060099534A1
公开(公告)日：2006-05-11
申请号：US10525763
申请日：2003-08-26
申请人： Janusz Murakowski , Dennis Prather
发明人： Janusz Murakowski , Dennis Prather
IPC分类号： G03F7/00
CPC分类号： G03F7/0035 , B82Y20/00 , G02B1/005 , G02B6/1225 , G02B6/13 , G03F7/0005 , G03F7/001 , Y10S430/143
摘要： A method for manufacturing optical components in a three-dimensional photonic crystal lattice. A first resist (9) is coated on a substrate (10) and exposed to an e-beam (11), to produce an imaged area (12). Another resist coating is applied to thicken the resist (13) and an interference exposure (15) is used to image the result. This is developed to form periodic voids (16), which may be filled with a materials having a high refractive index to form a pattern (18 and 12) when the resist (13) is removed.
摘要翻译：一种用于制造三维光子晶格中的光学部件的方法。第一抗蚀剂（9）涂覆在基材（10）上并暴露于电子束（11），以产生成像区域（12）。施加另一抗蚀剂涂层以使抗蚀剂（13）变厚，并且使用干涉曝光（15）对结果进行成像。这被开发以形成周期性空隙（16），当去除抗蚀剂（13）时，其可以填充具有高折射率的材料以形成图案（18和12）。

5. 发明申请

US20050154546A1 Hardware implementation of the pseudo-spectral time-domain method 有权
标题翻译：伪光谱时域方法的硬件实现
公开(公告)号：US20050154546A1
公开(公告)日：2005-07-14
申请号：US10517224
申请日：2003-06-24
申请人： John Humphrey , James Durbano , Dennis Prather
发明人： John Humphrey , James Durbano , Dennis Prather
IPC分类号： G01R23/16 , G06F17/13
CPC分类号： G06F17/13
摘要： A computer hardware configuration for performing the pseudo-spectral time-domain (PSTD) method on data. The hardware configuration includes a forward fast Fourier transform (FFT) unit that calculates a forward fast Fourier transform (FFT) from the data, and a complex multiplication unit that receives the FFT-processed data and calculates a spatial derivative in the frequency domain from the FFT-processed data. The hardware configuration further includes an inverse fast Fourier transform (IFFT) unit that converts the spatial derivative in the frequency domain from the complex multiplication unit into the time domain, and a computation engine that solves a PSTD equation based upon the spatial derivative in the time domain received from the IFFT unit.
摘要翻译：一种用于对数据执行伪频谱时域（PSTD）方法的计算机硬件配置。硬件配置包括从数据计算正向快速傅里叶变换（FFT）的前向快速傅里叶变换（FFT）单元，以及接收经FFT处理的数据并从频域计算空间导数的复数乘法单元 FFT处理数据。硬件配置还包括将频域中的空间导数从复数乘法转换为时域的逆快速傅里叶变换（IFFT）单元，以及基于时间上的空间导数求解PSTD方程的计算引擎从IFFT单位收到的域。

6. 发明申请

US20050147417A1 Wave detection methods and apparatus 审中-公开
标题翻译：波检测方法和装置
公开(公告)号：US20050147417A1
公开(公告)日：2005-07-07
申请号：US10970519
申请日：2004-10-21
申请人： Dennis Prather , Shrenik Deliwala , Christopher Schuetz
发明人： Dennis Prather , Shrenik Deliwala , Christopher Schuetz
IPC分类号： G01R29/08 , H01Q9/27 , H04B10/04
CPC分类号： G01R29/0864 , H01Q9/27
摘要： Methods and apparatus for detecting waves are disclosed. The waves are detected by modulating an optical carrier signal having a carrier signal frequency component at a carrier frequency with wave signals at one or more detection frequencies, optically removing the carrier signal frequency component from the modulated optical carrier signal, and detecting an energy level of the modulated optical carrier signal after removal of the carrier signal frequency component, the energy level indicative of the presence of the wave signals.
摘要翻译：公开了用于检测波的方法和装置。通过以一个或多个检测频率调制具有载波频率的载波信号频率分量与波信号的光载波信号来检测波，从调制的光载波信号中光学去除载波信号频率分量，并检测去除了载波信号频率分量后的调制光载波信号，指示波信号存在的能级。

7. 发明申请

US20050032272A1 METHOD FOR CREATING FLIP-CHIP CONDUCTIVE-POLYMER BUMPS USING PHOTOLITHOGRAPHY AND POLISHING 失效
标题翻译：使用光刻和抛光创建卷芯片导电聚合物的方法
公开(公告)号：US20050032272A1
公开(公告)日：2005-02-10
申请号：US10710870
申请日：2004-08-09
申请人： Dennis Prather , Saurabh Lohokare
发明人： Dennis Prather , Saurabh Lohokare
IPC分类号： H01L21/48 , H01L21/60 , H01L21/44 , H01L21/50
CPC分类号： H01L24/11 , H01L21/4853 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01033 , H01L2924/01047 , H01L2924/01051 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/19043 , H01L2924/3011 , H01L2924/351 , H01L2924/00
摘要： A method for fabricating a flip-chip semiconductor device having plural conductive polymer bumps includes forming plural molds on a substrate using a photolithographic technique; filling the molds by applying and spinning a layer of conductive polymer material onto the substrate; polishing the conductive polymer material layer to remove excess conductive material from a surface of the substrate; and stripping the plural molds from the substrate to reveal the plural bumps. In various aspects of disclosure, either positive resist or negative resist may be used. The electrical contact resistance compares favorably with squeegee-based bumps; there is an improvement in the contact resistance of the bumps patterned using polishing techniques in comparison to that of squeegee-based conductive polymer bumps.
摘要翻译：一种制造具有多个导电聚合物凸块的倒装芯片半导体器件的方法包括使用光刻技术在衬底上形成多个模具; 通过将一层导电聚合物材料施加和旋转到基底上来填充模具; 抛光导电聚合物材料层以从衬底的表面去除过量的导电材料; 以及从所述基板剥离所述多个模具以露出所述多个凸块。在公开的各个方面，可以使用正性抗蚀剂或负性抗蚀剂。电接触电阻与刮刀基凸块相比有利; 与使用了刮板的导电性聚合物凸块相比，使用研磨技术图案化的凸块的接触电阻有所改善。

8. 发明申请

US20140007935A1 HYBRID DIELECTRIC-METALLIC BACK REFLECTOR FOR PHOTOVOLTAIC APPLICATIONS 审中-公开
标题翻译：用于光伏应用的混合电介质金属反射器
公开(公告)号：US20140007935A1
公开(公告)日：2014-01-09
申请号：US13885903
申请日：2011-11-18
申请人： James Mutitu , Shouyuan Shi , Dennis Prather , Allen Barnett
发明人： James Mutitu , Shouyuan Shi , Dennis Prather , Allen Barnett
IPC分类号： H01L31/0232
CPC分类号： H01L31/02327 , H01L31/02165 , H01L31/02168 , H01L31/02366 , H01L31/056 , Y02E10/52
摘要： A photovoltaic device includes a photovoltaic layer configured to convert light into electrical power, a distributed Bragg reflector (DBR) layer having one to three periods disposed adjacent the photovoltaic layer, a metal layer, disposed adjacent the DBR layer, configured to reflect light passed through the photovoltaic layer to the DBR layer, and a phase matching layer disposed between the metal layer and the DBR layer, the phase matching layer configured to match a phase between the DBR layer and the metal layer over a selected wavelength band. The metal layer has a non-uniformed textured surface facing the phase matching layer. The photovoltaic device further includes an anti-reflection coating layer disposed on a top surface of the photovoltaic layer, and a substrate on which the metal layer is disposed. The substrate may be textured on a surface facing the metal layer.
摘要翻译：一种光伏器件包括被配置为将光转换成电力的光伏层，布置在布拉格反射体（DBR）层中的布置于布置于布置的布拉格反射层（DBR）层，其中一个至三个周期设置在光伏层附近，邻近该DBR层布置的金属层，所述光电层到所述DBR层，以及配置在所述金属层和所述DBR层之间的相位匹配层，所述相位匹配层被配置为使所述DBR层和所述金属层之间的相位在选定的波长带上相匹配。金属层具有面向相位匹配层的非均匀织构表面。光电器件还包括设置在光伏层的顶表面上的防反射涂层和设置金属层的基板。衬底可以在面向金属层的表面上纹理化。

9. 发明申请

US20060180762A1 Terahertz frequency band wavelength selector 失效
公开(公告)号：US20060180762A1
公开(公告)日：2006-08-17
申请号：US11401717
申请日：2006-04-11
申请人： James Kolodzey , Thomas Adam , Dennis Prather
发明人： James Kolodzey , Thomas Adam , Dennis Prather
IPC分类号： G01J5/02
CPC分类号： H01S5/30 , H01S5/3027 , H01S5/3031 , H01S5/305
摘要： A terahertz (THz) frequency radiation source to emit radiation in a narrow wavelength band within a range of about 3 μm to 3000 μm. This source includes: a broad bandwidth emitter to generate a broad bandwidth emitted wavelength band within the wavelength range; a first planar waveguide optically coupled to the broad bandwidth emitter to transmit the broad bandwidth radiation; a disk resonator evanescently coupled to the first planar waveguide with a resonance wavelength band within the emitted wavelength band; and a second planar waveguide evanescently coupled to the disk resonator to transmit radiation in the narrow wavelength band. The emitted wavelength band has a bandwidth greater than or equal to about 0.01 times a mid-band wavelength. The resonance wavelength band has a resonance wavelength bandwidth of less than or equal to about 0.25 times the emitted bandwidth. The narrow wavelength band is substantially equal to the resonance wavelength band.

10. 发明申请

US20060054918A1 Antimonide-based optical devices 失效
标题翻译：基于锑酸盐的光学器件
公开(公告)号：US20060054918A1
公开(公告)日：2006-03-16
申请号：US11040430
申请日：2005-01-21
申请人： Saurabh Lohokare , Dennis Prather
发明人： Saurabh Lohokare , Dennis Prather
IPC分类号： H01L33/00
CPC分类号： H01L31/0304 , H01L31/105 , H01L31/107 , H01L31/184 , H01L33/30 , Y02E10/544 , Y02P70/521
摘要： An optical device includes an antimonide-containing substrate, and an antimonide-containing n-doped layer provided on the substrate. The optical device further includes an antimonide-containing i-doped layer provided on the n-doped layer, an antimonide-containing p-doped layer provided on the i-doped layer, and an antimonide-containing p+-doped layer provided on the p-doped layer.
摘要翻译：光学器件包括含锑化物的衬底和设置在衬底上的含锑化物的n掺杂层。光学器件还包括设置在n掺杂层上的含锑化物的i掺杂层，设置在i掺杂层上的含锑化物的p掺杂层和含锑化物的p + >掺杂层提供在p掺杂层上。

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