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1. 发明授权

US06834547B2 Humidity sensor and fabrication method thereof 有权
公开(公告)号：US06834547B2
公开(公告)日：2004-12-28
申请号：US10440934
申请日：2003-05-19
申请人： Chih-Kun Chen , Yao-Hsiung Kung , Chung-Min Lin , Hsin-Chuan Tsai
发明人： Chih-Kun Chen , Yao-Hsiung Kung , Chung-Min Lin , Hsin-Chuan Tsai
IPC分类号： G01N100
CPC分类号： G01N27/121
摘要： A humidity sensor and fabrication method thereof. In the humidity sensor of the present invention, two comb-type electrodes with a plurality of teeth are disposed on a semiconductor substrate. A SiO2 sensing film is disposed between the teeth of the two comb-type electrodes on the substrate. A predetermined voltage is applied between the two comb-type electrodes, a leakage current between the two electrodes is detected, and the humidity in the environment is measured according thereto.

2. 发明授权

US06745631B2 Method of measuring pore depth on the surface of a polishing pad 有权
公开(公告)号：US06745631B2
公开(公告)日：2004-06-08
申请号：US10435440
申请日：2003-05-09
申请人： Chih-Kun Chen , Chung-Min Lin
发明人： Chih-Kun Chen , Chung-Min Lin
IPC分类号： G01N2918
CPC分类号： B24B37/26 , B24B49/00 , B24D13/147 , G01N29/07 , G01N2291/2638
摘要： A method of measuring pore depth on the surface of a polishing pad during processing. In the present invention, a planar ultrasound sensing device is disposed a predetermined distance above the surface of a polishing pad. The planar ultrasound sensing device sends out a plurality of ultrasound signals to the surface and the pores therein, and receives a plurality of reflected signals from the pad surface and constituent pores. The difference between pore depth and the surface is determined to establish first depth difference data according to the time delay in the reflected signals. The polishing pad is rotated to obtain second to Nth depth difference data. A relational image relative to the surface and the pores of the polishing pad is obtained according to the first to Nth depth difference data.

3. 发明授权

US06178783B2 Yarn feeder for knitting machine 失效
标题翻译：针织机喂纱机
公开(公告)号：US06178783B2
公开(公告)日：2001-01-30
申请号：US09522364
申请日：2000-03-09
申请人： Chung-Min Lin
发明人： Chung-Min Lin
IPC分类号： D04B1548
CPC分类号： D04B15/48
摘要： An improved yarn feeder for knitting machines includes a frame, a feeding reel, a brake, a press block, a pulley, a holder, a transmission spindle and a yarn guide. The feeding reel includes a driven wheel which has a top flange with a center opening and a plurality of equally spaced rods extending downward from bottom surface of the top flange, and a driving wheel which has spoke like ribs each has a slot opening at a free end thereof for engaging with an elongated bar at a lower portion which has a “8” shaped crosssection. The driving wheel may engage with the driven wheel through the center opening with the top end of the elongated bar engaged with a cavity formed in the bottom side of the top flange between a pair of adjacent rods. The feeding reel and the yarn feeder may be made with greater precision at a lower cost than conventional yarn feeder.
摘要翻译：用于针织机的改进的喂纱机包括框架，馈送卷轴，制动器，压块，滑轮，保持器，传动主轴和导纱器。馈送卷轴包括从动轮，该从动轮具有带有中心开口的顶部凸缘和从顶部凸缘的底部表面向下延伸的多个等间距的杆，以及具有辐条状肋条的驱动轮，其端部与具有“8”形横截面的下部的细长杆接合。驱动轮可以通过中心开口与从动轮接合，细长杆的顶端与在一对相邻的杆之间形成在顶部凸缘的底侧中的空腔接合。馈送卷轴和喂纱器可以以比传统喂纱机更低的成本更高的精度制成。

4. 发明授权

US08643151B2 Passivation layer for semiconductor devices 有权
标题翻译：半导体器件钝化层
公开(公告)号：US08643151B2
公开(公告)日：2014-02-04
申请号：US13036897
申请日：2011-02-28
申请人： Jen-Hao Liu , Chyi-Tsong Ni , Hsiao-Yin Lin , Chung-Min Lin
发明人： Jen-Hao Liu , Chyi-Tsong Ni , Hsiao-Yin Lin , Chung-Min Lin
IPC分类号： H01L23/58
CPC分类号： H01L23/3192 , H01L21/76834 , H01L2924/0002 , H01L2924/00
摘要： An embodiment of the disclosure provides a semiconductor device. The semiconductor device includes a plurality of metallization layers comprising a topmost metallization layer. The topmost metallization layer has two metal features having a thickness T1 and being separated by a gap. A composite passivation layer comprises a HDP CVD oxide layer under a nitride layer. The composite passivation layer is disposed over the metal features and partially fills the gap. The composite passivation layer has a thickness T2 about 20% to 50% of the thickness T1.
摘要翻译：本公开的实施例提供一种半导体器件。半导体器件包括多个金属化层，其包括最上面的金属化层。最上面的金属化层具有两个具有厚度T1并被间隙隔开的金属特征。复合钝化层包括氮化物层下的HDP CVD氧化物层。复合钝化层设置在金属特征上并部分填充间隙。复合钝化层的厚度T2约为厚度T1的20％至50％。

5. 发明授权

US06920796B2 Device used for detecting clamping force of processed object and method thereof 有权
标题翻译：用于检测加工对象的夹紧力的装置及其方法
公开(公告)号：US06920796B2
公开(公告)日：2005-07-26
申请号：US10705939
申请日：2003-11-13
申请人： Chih-Kun Chen , Yao-Hsiung Kung , Chung-Min Lin , Shan-Chang Wang , Jiun-Bo Wang
发明人： Chih-Kun Chen , Yao-Hsiung Kung , Chung-Min Lin , Shan-Chang Wang , Jiun-Bo Wang
IPC分类号： G01L5/00 , H01L21/00 , H01L21/687 , G01N3/02
CPC分类号： H01L21/67288 , G01L5/009 , H01L21/68707
摘要： A device used for detecting the clamping force of a processed object and a method thereof are proposed. The device comprises a detection unit, a basis component and a pressure detection component disposed on the basis component. The basis component having the pressure detection component is closely placed between pivotal rods so that the detection unit can detect variation of electric properties of the pressure detection component to adjust the spacing between the pivotal rods, hence facilitating adjustment of the clamping force.
摘要翻译：提出了一种用于检测加工对象的夹持力的装置及其方法。该装置包括检测单元，基础部件和设置在基础部件上的压力检测部件。具有压力检测部件的基础部件紧密地放置在枢转杆之间，使得检测单元可以检测压力检测部件的电特性的变化，以调节枢转杆之间的间隔，从而有助于调节夹紧力。

6. 发明申请

US20120217633A1 PASSIVATION LAYER FOR SEMICONDUCTOR DEVICES 有权
标题翻译：半导体器件的钝化层
公开(公告)号：US20120217633A1
公开(公告)日：2012-08-30
申请号：US13036897
申请日：2011-02-28
申请人： Jen-Hao LIU , Chyi-Tsong NI , Hsiao-Yin LIN , Chung-Min LIN
发明人： Jen-Hao LIU , Chyi-Tsong NI , Hsiao-Yin LIN , Chung-Min LIN
IPC分类号： H01L23/485 , H01L21/768
CPC分类号： H01L23/3192 , H01L21/76834 , H01L2924/0002 , H01L2924/00
摘要： An embodiment of the disclosure provides a semiconductor device. The semiconductor device includes a plurality of metallization layers comprising a topmost metallization layer. The topmost metallization layer has two metal features having a thickness T1 and being separated by a gap. A composite passivation layer comprises a HDP CVD oxide layer under a nitride layer. The composite passivation layer is disposed over the metal features and partially fills the gap. The composite passivation layer has a thickness T2 about 20% to 50% of the thickness T1.
摘要翻译：本公开的实施例提供一种半导体器件。半导体器件包括多个金属化层，其包括最上面的金属化层。最上面的金属化层具有两个具有厚度T1并被间隙隔开的金属特征。复合钝化层包括氮化物层下的HDP CVD氧化物层。复合钝化层设置在金属特征上并部分填充间隙。复合钝化层的厚度T2约为厚度T1的20％至50％。

7. 发明申请

US20050103121A1 DEVICE USED FOR DETECTING CLAMPING FORCE OF PROCESSED OBJECT AND METHOD THEREOF 有权
标题翻译：用于检测加工对象夹紧力的装置及其方法
公开(公告)号：US20050103121A1
公开(公告)日：2005-05-19
申请号：US10705939
申请日：2003-11-13
申请人： Chih-Kun Chen , Yao-Hsiung Kung , Chung-Min Lin , Shan-Chang Wang , Jiun-Bo Wang
发明人： Chih-Kun Chen , Yao-Hsiung Kung , Chung-Min Lin , Shan-Chang Wang , Jiun-Bo Wang
IPC分类号： G01L5/00 , H01L21/00 , H01L21/687 , G01N3/02
CPC分类号： H01L21/67288 , G01L5/009 , H01L21/68707
摘要： A device used for detecting the clamping force of a processed object and a method thereof are proposed. The device comprises a detection unit, a basis component and a pressure detection component disposed on the basis component. The basis component having the pressure detection component is closely placed between pivotal rods so that the detection unit can detect variation of electric properties of the pressure detection component to adjust the spacing between the pivotal rods, hence facilitating adjustment of the clamping force.
摘要翻译：提出了一种用于检测加工对象的夹持力的装置及其方法。该装置包括检测单元，基础部件和设置在基础部件上的压力检测部件。具有压力检测部件的基础部件紧密地放置在枢转杆之间，使得检测单元可以检测压力检测部件的电特性的变化，以调节枢转杆之间的间隔，从而有助于调节夹紧力。

8. 发明授权

US06575820B2 Chemical mechanical polishing apparatus 有权
标题翻译：化学机械抛光装置
公开(公告)号：US06575820B2
公开(公告)日：2003-06-10
申请号：US10053164
申请日：2002-01-15
申请人： Li-Chung Liu , Ching-Hung Chang , Chung-Min Lin
发明人： Li-Chung Liu , Ching-Hung Chang , Chung-Min Lin
IPC分类号： B24B2118
CPC分类号： B24B53/017 , B08B1/00 , B08B1/007 , B08B3/10 , B08B3/12 , B24B37/04 , B24B53/12 , H01L21/67046
摘要： A chemical mechanical polishing apparatus comprises a platen having a polishing pad thereon, a wafer carrier holding a wafer on the polishing pad, a washer having a cleaning device; and a dresser. The dresser comprises a bottom disk contacting the polishing pad. The dresser can move between the polishing pad and the washer. When the dresser moves into the washer, a diamond zone on the bottom disk cleans the polishing pad, and the cleaning device cleans the diamond zone.
摘要翻译：化学机械抛光装置包括其上具有抛光垫的压板，在抛光垫上保持晶片的晶片载体，具有清洁装置的垫圈; 和梳妆台。修整器包括接触抛光垫的底盘。修整器可以在抛光垫和垫圈之间移动。当梳妆台移动到洗衣机中时，底盘上的钻石区域清洁抛光垫，并且清洁装置清洁钻石区域。

9. 发明授权

US06153482A Method for fabricating LOCOS isolation having a planar surface which includes having the polish stop layer at a lower level than the LOCOS formation 有权
标题翻译：用于制造具有平坦表面的LOCOS隔离的方法，其包括使抛光停止层处于比LOCOS形成更低的水平
公开(公告)号：US06153482A
公开(公告)日：2000-11-28
申请号：US174091
申请日：1998-10-16
申请人： Lin-Chin Su , Tzu-Ching Tsai , Miin-Jiunn Jiang , Hung-Chang Liao , Jim Wang , Chung Min Lin
发明人： Lin-Chin Su , Tzu-Ching Tsai , Miin-Jiunn Jiang , Hung-Chang Liao , Jim Wang , Chung Min Lin
IPC分类号： H01L21/762 , H01L21/331 , H01L21/302 , H01L21/76
CPC分类号： H01L21/76205
摘要： A method for fabricating LOCOS isolation having a planar surface. The method utilizes a polysilicon spacer to prevent bird beak. The method adds the steps of forming a polishing stop layer and removing said edge-protrusion portion of the local oxide by chemical mechanical polishing.
摘要翻译：一种用于制造具有平坦表面的LOCOS隔离的方法。该方法利用多晶硅间隔物来防止鸟嘴。该方法通过化学机械抛光添加形成抛光停止层并去除局部氧化物的边缘突出部分的步骤。

10. 发明授权

US6025263A Underlayer process for high O.sub.3 /TEOS interlayer dielectric deposition 失效
标题翻译：用于高O3 / TEOS层间电介质沉积的底层工艺
公开(公告)号：US6025263A
公开(公告)日：2000-02-15
申请号：US927287
申请日：1997-09-11
申请人： Hsin-Chuan Tsai , Chung-Min Lin
发明人： Hsin-Chuan Tsai , Chung-Min Lin
IPC分类号： H01L21/316 , H01L21/4763
CPC分类号： H01L21/02164 , H01L21/0214 , H01L21/0217 , H01L21/022 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/31612 , Y10S438/958
摘要： A underlayer process for high O.sub.3 /TEOS interlayer dielectric deposition is disclosed. First, a layer of metal pattern is defined on a semiconductor substrate, then a layer of dielectric underlayer is deposited, next, a high O.sub.3 /TEOS interlayer dielectric is formed to achieve planarization. The key point of this process is to apply materials with higher refraction index than conventional PE-TEOS for forming interlayer dielectric underlayer. The mentioned material can be PE-SiH.sub.4 with a constant or decreasing refraction index with the distance from the semiconductor substrate. The underlayer can also be bi-layer structure consisting of high refraction index bottom layer and low refraction index surface layer. This invention can effectively suppress the problem caused from high surface sensitivity of O.sub.3 /TEOS, and improve the quality of interlayer dielectric planarization process dramatically.
摘要翻译：公开了一种用于高O 3 / TEOS层间电介质沉积的底层工艺。首先，在半导体衬底上限定一层金属图案，然后沉积一层电介质底层，接着形成高O 3 / TEOS层间电介质以实现平坦化。该方法的关键在于应用具有比常规PE-TEOS更高的折射率的材料以形成层间电介质底层。所提到的材料可以是具有恒定或降低折射率的距离与半导体衬底的距离的PE-SiH4。底层也可以是由高折射率底层和低折射率表面层组成的双层结构。本发明可以有效地抑制由O3 / TEOS的高表面灵敏度引起的问题，并显着提高层间介质平坦化工艺的质量。

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