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    • 1. 发明授权
    • High-reliability gate driving circuit
    • 高可靠性门驱动电路
    • US08269712B2
    • 2012-09-18
    • US12465630
    • 2009-05-13
    • Chih-Jen ShihChun-Kuo YuChun-Yuan Hsu
    • Chih-Jen ShihChun-Kuo YuChun-Yuan Hsu
    • G09G3/36H03K19/096
    • G11C19/28G09G3/3677
    • A high-reliability gate driving circuit is disclosed for providing a plurality of gate signals to plural gate lines respectively. The gate driving circuit includes a plurality of shift register stages. Each shift register stage includes a pull-up unit, an energy-store unit, a buffer unit, a discharging unit, a first pull-down unit, a second pull-down unit and a control unit. The pull-up unit pulls up a gate signal according to a driving control voltage and a first clock. The buffer unit receives an input signal. The energy-store unit provides the driving control voltage through performing a charging process based on the input signal. The first pull-down unit pulls down the gate signal according to a control signal. The second pull-down unit pulls down the gate signal according to a second clock having a phase opposite to the first clock. The control unit generates the control signal based on the gate signal.
    • 公开了一种高可靠性栅极驱动电路,用于分别向多个栅极线提供多个栅极信号。 栅极驱动电路包括多个移位寄存器级。 每个移位寄存器级包括上拉单元,能量存储单元,缓冲单元,放电单元,第一下拉单元,第二下拉单元和控制单元。 上拉单元根据驱动控制电压和第一个时钟上拉一个门信号。 缓冲单元接收输入信号。 能量存储单元通过基于输入信号进行充电处理来提供驱动控制电压。 第一个下拉单元根据控制信号拉下门信号。 第二下拉单元根据具有与第一时钟相反的相位的第二时钟来拉低门信号。 控制单元根据门信号产生控制信号。
    • 2. 发明申请
    • HIGH-RELIABILITY GATE DRIVING CIRCUIT
    • 高可靠性门驱动电路
    • US20100177068A1
    • 2010-07-15
    • US12465630
    • 2009-05-13
    • Chih-Jen ShihChun-Kuo YuChun-Yuan Hsu
    • Chih-Jen ShihChun-Kuo YuChun-Yuan Hsu
    • G06F3/038G09G3/36
    • G11C19/28G09G3/3677
    • A high-reliability gate driving circuit is disclosed for providing a plurality of gate signals to plural gate lines respectively. The gate driving circuit includes a plurality of shift register stages. Each shift register stage includes a pull-up unit, an energy-store unit, a buffer unit, a discharging unit, a first pull-down unit, a second pull-down unit and a control unit. The pull-up unit pulls up a gate signal according to a driving control voltage and a first clock. The buffer unit receives an input signal. The energy-store unit provides the driving control voltage through performing a charging process based on the input signal. The first pull-down unit pulls down the gate signal according to a control signal. The second pull-down unit pulls down the gate signal according to a second clock having a phase opposite to the first clock. The control unit generates the control signal based on the gate signal.
    • 公开了一种高可靠性栅极驱动电路,用于分别向多个栅极线提供多个栅极信号。 栅极驱动电路包括多个移位寄存器级。 每个移位寄存器级包括上拉单元,能量存储单元,缓冲单元,放电单元,第一下拉单元,第二下拉单元和控制单元。 上拉单元根据驱动控制电压和第一个时钟上拉一个门信号。 缓冲单元接收输入信号。 能量存储单元通过基于输入信号进行充电处理来提供驱动控制电压。 第一个下拉单元根据控制信号拉下门信号。 第二下拉单元根据具有与第一时钟相反的相位的第二时钟来拉低门信号。 控制单元根据门信号产生控制信号。
    • 5. 发明授权
    • Shift register apparatus and method thereof
    • 移位寄存器及其方法
    • US07764761B2
    • 2010-07-27
    • US12187384
    • 2008-08-07
    • Chih-Jen ShihChun-Yuan HsuChe-Cheng KuoChun-Kuo Yu
    • Chih-Jen ShihChun-Yuan HsuChe-Cheng KuoChun-Kuo Yu
    • G11C19/00
    • H03K19/00315G09G3/3677G09G2310/0286G11C19/28
    • A shift register apparatus and a method thereof are provided. The technique manner submitted by the present invention utilizes two NMOS transistors for pulling down the voltage level of the scan signals output by the shift registers within the shift register apparatus to the low level gate voltage, wherein one of the NMOS transistors is controlled by a control unit, and the other NMOS transistor is controlled by a clock signal or the inverted clock signal provided to the shift registers. Therefore, shifting amount of the threshold voltage of those NMOS transistors can trend to be flat, and the reliability of those NMOS transistors can be promoted. In addition, since only one control unit is needed to dispose in each shift register so that the layout area of whole shift register apparatus can be reduced, and the panel with narrow frame size also can be achieved by the present invention.
    • 提供一种移位寄存装置及其方法。 本发明提供的技术方法利用两个NMOS晶体管来将由移位寄存器装置内的移位寄存器输出的扫描信号的电压电平降低到低电平门电压,其中一个NMOS晶体管由一个控制 单元,另一个NMOS晶体管由提供给移位寄存器的时钟信号或反相时钟信号控制。 因此,那些NMOS晶体管的阈值电压的移动量趋向于平坦,并且可以促进那些NMOS晶体管的可靠性。 此外,由于只需要一个控制单元来配置在每个移位寄存器中,从而可以减少整个移位寄存器装置的布局区域,并且通过本发明也可以实现具有窄帧大小的面板。
    • 6. 发明申请
    • SHIFT REGISTER APPARATUS AND METHOD THEREOF
    • 移位寄存器及其方法
    • US20100002827A1
    • 2010-01-07
    • US12187384
    • 2008-08-07
    • Chih-Jen ShihChun-Yuan HsuChe-Cheng KuoChun-Kuo Yu
    • Chih-Jen ShihChun-Yuan HsuChe-Cheng KuoChun-Kuo Yu
    • H03K23/46
    • H03K19/00315G09G3/3677G09G2310/0286G11C19/28
    • A shift register apparatus and a method thereof are provided. The technique manner submitted by the present invention utilizes two NMOS transistors for pulling down the voltage level of the scan signals output by the shift registers within the shift register apparatus to the low level gate voltage, wherein one of the NMOS transistors is controlled by a control unit, and the other NMOS transistor is controlled by a clock signal or the inverted clock signal provided to the shift registers. Therefore, shifting amount of the threshold voltage of those NMOS transistors can trend to be flat, and the reliability of those NMOS transistors can be promoted. In addition, since only one control unit is needed to dispose in each shift register so that the layout area of whole shift register apparatus can be reduced, and the panel with narrow frame size also can be achieved by the present invention.
    • 提供一种移位寄存装置及其方法。 本发明提供的技术方法利用两个NMOS晶体管来将由移位寄存器装置内的移位寄存器输出的扫描信号的电压电平降低到低电平门电压,其中一个NMOS晶体管由一个控制 单元,另一个NMOS晶体管由提供给移位寄存器的时钟信号或反相时钟信号控制。 因此,那些NMOS晶体管的阈值电压的移动量趋向于平坦,并且可以促进那些NMOS晶体管的可靠性。 此外,由于只需要一个控制单元来配置在每个移位寄存器中,从而可以减少整个移位寄存器装置的布局区域,并且通过本发明也可以实现具有窄帧大小的面板。