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1. 发明授权

US09403670B2 MEMS device having a microphone structure, and method for the production thereof 有权
标题翻译：具有麦克风结构的MEMS器件及其制造方法
公开(公告)号：US09403670B2
公开(公告)日：2016-08-02
申请号：US14327180
申请日：2014-07-09
申请人： Christoph Schelling , Stefan Singer , Jochen Zoellin
发明人： Christoph Schelling , Stefan Singer , Jochen Zoellin
IPC分类号： H01L29/84 , B81B3/00 , B81C1/00 , H04R19/00
CPC分类号： B81B3/0059 , B81B3/0072 , B81B2201/0257 , B81B2201/0264 , B81B2203/0127 , B81C1/00158 , B81C1/00666 , H04R19/005 , H04R2201/003
摘要： A microphone structure of an MEMS device has a layer construction including: a base substrate; a deflectable microphone diaphragm at least partly spanning a through-opening in the substrate; a deflectable electrode of a microphone condenser system; a stationary counter-element having ventilation openings situated in the layer construction over the microphone diaphragm and acting as a bearer for a stationary electrode of the microphone condenser system. The diaphragm is bonded into the layer construction on the substrate via a flexible beam. The otherwise free edge region of the diaphragm is curved in a pan shape, so that it extends both vertically and also in some regions laterally beyond the edge region of the through-opening, and the edge region of the through-opening forms a lower stop for the diaphragm movement.
摘要翻译： MEMS器件的麦克风结构具有层结构，包括：基底; 至少部分跨越所述基板中的通孔的可偏转传声器隔膜; 麦克风冷凝器系统的可偏转电极; 一个固定的相对元件，其具有位于麦克风隔膜上的层结构中的通气开口，并且用作麦克风电容器系统的固定电极的载体。隔膜通过柔性梁结合到基板上的层结构中。隔膜的另外的自由边缘区域以平盘形状弯曲，使得其在垂直方向上以及在一些区域中横向延伸超过通孔的边缘区域，并且通孔的边缘区域形成下部停止用于隔膜运动。

2. 发明授权

US09131319B2 Component having a micromechanical microphone structure 有权
标题翻译：具有微机械麦克风结构的部件
公开(公告)号：US09131319B2
公开(公告)日：2015-09-08
申请号：US14046587
申请日：2013-10-04
申请人： Jochen Zoellin , Ricardo Ehrenpfordt , Juergen Graf , Christoph Schelling , Frederik Ante , Michael Curcic
发明人： Jochen Zoellin , Ricardo Ehrenpfordt , Juergen Graf , Christoph Schelling , Frederik Ante , Michael Curcic
IPC分类号： H04R25/00 , H04R23/00 , H04R19/04 , H04R7/14 , H04R19/00
CPC分类号： H04R23/00 , H04R7/14 , H04R19/005 , H04R19/04 , H04R2410/03
摘要： A capacitive MEMS microphone structure is provided, which micromechanical microphone structure of component is realized in a layer construction and includes: a diaphragm structure sensitive to sound pressure, which is deflectable in a direction perpendicular to the layer planes of the layer construction; an acoustically penetrable counter-element which has through holes and is formed above or below the diaphragm structure in the layer construction; and a capacitor system for detecting the excursions of the diaphragm structure. The diaphragm structure includes a structural element in the middle area of the diaphragm structure, which structural element projects perpendicularly from the diaphragm plane and which, depending on the degree of excursion of the diaphragm structure, variably extends into a correspondingly formed and positioned through hole in the counter-element.
摘要翻译：提供一种电容式MEMS麦克风结构，该组件的微机械麦克风结构以层结构实现，包括：对垂直于层结构的层平面垂直的方向可偏转的声压的隔膜结构; 具有通孔并形成在层结构中的隔膜结构的上方或下方的声学可穿透的相对元件; 以及用于检测隔膜结构的偏移的电容器系统。隔膜结构包括在隔膜结构的中间区域中的结构元件，该结构元件从隔膜平面垂直伸出，并且根据隔膜结构的偏移程度可变地延伸到相应形成和定位的通孔中反元素。

3. 发明申请

US20140126762A1 COMPONENT HAVING A MICROMECHANICAL MICROPHONE STRUCTURE 有权
标题翻译：具有微机械麦克风结构的组分
公开(公告)号：US20140126762A1
公开(公告)日：2014-05-08
申请号：US14071227
申请日：2013-11-04
申请人： Jochen ZOELLIN , Christoph SCHELLING
发明人： Jochen ZOELLIN , Christoph SCHELLING
IPC分类号： H04R1/04
CPC分类号： H04R1/04 , H04R1/28 , H04R7/04 , H04R7/20 , H04R7/24 , H04R19/005 , H04R19/04
摘要： Measures for dynamically regulating the microphone sensitivity of a MEMS microphone component at low frequencies by way of variable roll-off behavior are proposed. The micromechanical microphone structure of the component, which is implemented in a layer structure on a semiconductor substrate, encompasses an acoustically active diaphragm having leakage openings which spans a sound opening in the substrate back side, and a stationary acoustically permeable counterelement having through openings which is disposed in the layer structure above/below the diaphragm. The component furthermore encompasses a capacitor assemblage for signal sensing, having at least one deflectable electrode on the diaphragm and at least one stationary electrode on the counterelement, and an arrangement for implementing a relative motion between the diaphragm and counterelement parallel to the layer planes.
摘要翻译：提出了通过可变滚降行为动态调节MEMS麦克风组件在低频下的麦克风灵敏度的措施。在半导体衬底上以层结构实现的部件的微机械式麦克风结构包括具有跨越衬底背侧中的声音开口的泄漏开口的声学活动隔膜，以及具有通孔的固定声透射反调器，设置在隔膜的上方/下方的层结构中。该组件还包括用于信号感测的电容器组件，其具有在隔膜上的至少一个可偏转电极和在该反射体上的至少一个固定电极，以及用于实现平行于层平面的隔膜和反射体之间的相对运动的装置。

4. 发明申请

US20140015070A1 COMPONENT HAVING A MICROMECHANICAL MICROPHONE PATTERN 有权
标题翻译：具有微机械麦克风图案的组件
公开(公告)号：US20140015070A1
公开(公告)日：2014-01-16
申请号：US13938582
申请日：2013-07-10
申请人： Jochen ZOELLIN , Ricardo EHRENPFORDT , Juergen GRAF , Christoph SCHELLING , Frederik ANTE , Michael CURCIC
发明人： Jochen ZOELLIN , Ricardo EHRENPFORDT , Juergen GRAF , Christoph SCHELLING , Frederik ANTE , Michael CURCIC
IPC分类号： B81B3/00
CPC分类号： B81B3/0021 , H04R19/005 , H04R19/016
摘要： A microphone component has a micromechanical microphone pattern which is implemented in a layer construction on a semiconductor substrate and includes (i) an acoustically active diaphragm which at least partially spans a sound opening on the backside of the substrate, (ii) at least one movable electrode of a microphone capacitor system, and (iii) a stationary acoustically penetrable counterelement having through holes, which counterelement is situated in the layer construction over the diaphragm and functions as the carrier for at least one immovable electrode of the microphone capacitor system. The diaphragm is tied in to the semiconductor substrate in a middle area, and the diaphragm has a corrugated sheet metal type of corrugation, at least in regions.
摘要翻译：麦克风组件具有微机械式麦克风图案，其以半导体衬底上的层结构实现，并且包括（i）至少部分地跨越衬底背面的声音开口的声学活动隔膜，（ii）至少一个可移动麦克风电容器系统的电极，以及（iii）具有通孔的固定声学可穿透的反应体，所述通孔位于隔膜上的层结构中，并且用作麦克风电容器系统的至少一个不可移动电极的载体。膜片在中间区域连接到半导体衬底，并且至少在区域中，隔膜具有波纹状金属板状波纹。

5. 发明授权

US08232126B2 Manufacturing method for a micromechanical component, corresponding composite component, and corresponding micromechanical component 有权
标题翻译：微机械部件的制造方法，相应的复合部件和相应的微机械部件
公开(公告)号：US08232126B2
公开(公告)日：2012-07-31
申请号：US12737036
申请日：2009-04-21
申请人： Hubert Benzel , Frank Henning , Armin Scharping , Christoph Schelling
发明人： Hubert Benzel , Frank Henning , Armin Scharping , Christoph Schelling
IPC分类号： H01L21/00
CPC分类号： B81C3/001 , B81B2201/0264 , B81C2201/019 , G01L9/0055
摘要： A manufacturing method for a micromechanical component, a corresponding composite component, and a corresponding micromechanical component are described. The method has the following steps: providing a first composite of a plurality of semiconductor chips, the first composite having first front and back surfaces; providing a second composite of a corresponding plurality of carrier substrates, the second composite having second front and back surfaces; imprinting a structured adhesion promoter layer on the first front and/or second front surfaces, the layer having degassing channels; aligning the first front and second front surfaces corresponding to a plurality of micromechanical components, each having a semiconductor chip and a corresponding carrier substrate; connecting the first front and second front surfaces via the structured adhesion promoter layer by applying pressure so that a gas from the ambient atmosphere is able to escape to the outside through the degassing channels; and separating the micromechanical components.
摘要翻译：对微机械部件的制造方法，对应的复合部件以及相应的微机械部件进行说明。该方法具有以下步骤：提供多个半导体芯片的第一复合材料，所述第一复合材料具有第一前表面和后表面; 提供相应的多个载体基板的第二复合材料，所述第二复合材料具有第二前表面和后表面; 在第一前表面和/或第二前表面上印刷结构化粘合促进剂层，该层具有脱气通道; 对准与多个微机械部件相对应的第一前和第二前表面，每个具有半导体芯片和相应的载体基板; 通过施加压力，通过结构化粘合促进剂层连接第一前表面和第二前表面，使得来自环境大气的气体能够通过脱气通道逸出到外部; 并分离微机械部件。

6. 发明授权

US08148234B2 Method for manufacturing a semiconductor structure, and a corresponding Semiconductor Structure 失效
标题翻译：半导体结构的制造方法以及相应的半导体结构
公开(公告)号：US08148234B2
公开(公告)日：2012-04-03
申请号：US12282842
申请日：2007-03-09
申请人： Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
发明人： Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
IPC分类号： H01L21/76
CPC分类号： H01L21/228 , H01L21/02378 , H01L21/02381 , H01L21/02532 , H01L21/02658 , H01L21/02667 , H01L21/223 , H01L21/225 , H01L21/324
摘要： A method for manufacturing a semiconductor structure is provided which includes the following operations: supplying a crystalline semiconductor substrate, providing a porous region adjacent to a surface of the semiconductor substrate, introducing a dopant into the porous region from the surface, and thermally recrystallizing the porous region into a crystalline doping region of the semiconductor substrate whose doping type and/or doping concentration and/or doping distribution are/is different from those or that of the semiconductor substrate. A corresponding semiconductor structure is likewise provided.
摘要翻译：提供了一种制造半导体结构的方法，其包括以下操作：提供晶体半导体衬底，提供与半导体衬底的表面相邻的多孔区域，从表面引入掺杂剂到多孔区域中，并将多孔区域形成半导体衬底的掺杂类型和/或掺杂浓度和/或掺杂分布/不同于半导体衬底或/或掺杂分布的晶体掺杂区域。同样提供相应的半导体结构。

7. 发明申请

US20110147862A1 MICROMECHANICAL COMPONENT HAVING AN INCLINED STRUCTURE AND CORRESPONDING MANUFACTURING METHOD 有权
标题翻译：具有一体化结构和对应制造方法的微型组件
公开(公告)号：US20110147862A1
公开(公告)日：2011-06-23
申请号：US12937093
申请日：2008-11-28
申请人： Tjalf Pirk , Stefan Pinter , Hubert Benzel , Herbert Weber , Michael Krueger , Robert Sattler , Frederic Njikam Njimonzie , Joerg Muchow , Joachim Fritz , Christoph Schelling , Christoph Friese
发明人： Tjalf Pirk , Stefan Pinter , Hubert Benzel , Herbert Weber , Michael Krueger , Robert Sattler , Frederic Njikam Njimonzie , Joerg Muchow , Joachim Fritz , Christoph Schelling , Christoph Friese
IPC分类号： H01L29/84 , B23K11/00
CPC分类号： B81C1/00103 , B81B2203/0118 , B81B2203/0307
摘要： In a micromechanical component having an inclined structure and a corresponding manufacturing method, the component includes a substrate having a surface; a first anchor, which is provided on the surface of the substrate and which extends away from the substrate; and at least one cantilever, which is provided on a lateral surface of the anchor, and which points at an inclination away from the anchor.
摘要翻译：在具有倾斜结构和相应的制造方法的微机械部件中，该部件包括具有表面的基板; 第一锚，其设置在基板的表面上并且远离基板延伸; 以及至少一个悬臂，其设置在锚固件的侧表面上，并且其倾斜远离锚固件。

8. 发明授权

US07572661B2 Method for manufacturing a micromechanical sensor element 有权
标题翻译：微机械传感器元件的制造方法
公开(公告)号：US07572661B2
公开(公告)日：2009-08-11
申请号：US11223637
申请日：2005-09-08
申请人： Hubert Benzel , Stefan Finkbeiner , Matthias Illing , Frank Schaefer , Simon Armbruster , Gerhard Lammel , Christoph Schelling , Joerg Brasas
发明人： Hubert Benzel , Stefan Finkbeiner , Matthias Illing , Frank Schaefer , Simon Armbruster , Gerhard Lammel , Christoph Schelling , Joerg Brasas
IPC分类号： H01L21/00
CPC分类号： B81C1/00047 , B81B2203/0109 , B81C2201/0115 , B81C2201/0116 , G01L9/0045
摘要： Described is a method for manufacturing a micromechanical sensor element and a micromechanical sensor element manufactured in particular using such a method which has a hollow space or a cavity and a membrane for detecting a physical variable. Different method steps are performed for manufacturing the sensor element, among other things, a structured etch mask having a plurality of holes or apertures being applied on a semiconductor substrate. Moreover, an etch process is used to create depressions in the semiconductor substrate beneath the holes in the structured etch mask. Anodization of the semiconductor material is subsequently carried out, the anodization taking place preferably starting from the created depressions in the semiconductor substrate. Due to this process, porous areas are created beneath the depressions, a lattice-like structure made of untreated, i.e., non-anodized, substrate material remaining between the porous areas and the depressions. This lattice-like structure extends preferably from the surface of the semiconductor into the depth. The etch mask for creating the depressions may be removed, optionally prior to or subsequent to the anodization. A temperature treatment is carried out for creating the hollow space and the membrane in the semiconductor substrate which forms the sensor element. During this process, the hollow space is created from the at least one area that has been rendered porous beneath a depression and the membrane above the hollow space is created from the lattice-like structure by rearranging the semiconductor material.
摘要翻译：描述了一种用于制造微机械传感器元件和微机械传感器元件的方法，特别是使用具有中空空间或空腔和用于检测物理变量的膜的方法制造的微机械传感器元件。执行用于制造传感器元件的不同的方法步骤，其中包括施加在半导体衬底上的多个孔或孔的结构化蚀刻掩模。此外，蚀刻工艺用于在结构化蚀刻掩模中的孔下面的半导体衬底中产生凹陷。随后进行半导体材料的阳极氧化，阳极氧化发生优选从半导体衬底中产生的凹陷开始。由于该过程，在凹陷下方产生多孔区域，由未处理的，即非阳极氧化的衬底材料制成的格状结构保留在多孔区域和凹陷之间。这种格子状结构优选地从半导体的表面延伸到深度。用于产生凹陷的蚀刻掩模可以任选地在阳极氧化之前或之后被去除。进行温度处理，以形成形成传感器元件的半导体衬底中的中空空间和膜。在该过程中，中空空间是从至少一个已经在凹陷下方多孔的区域产生的，并且通过重新排列半导体材料，从网格状结构产生中空空间之上的膜。

9. 发明申请

US20070128755A1 Micronozzle plate and manufacturing method 审中-公开
标题翻译：微喷盘及制造方法
公开(公告)号：US20070128755A1
公开(公告)日：2007-06-07
申请号：US11585769
申请日：2006-10-23
申请人： Matthias Fuertsch , Stefan Finkbeiner , Christoph Schelling , Stefan Weiss , Thomas Wagner , Christian Maeurer , Ines Breibach
发明人： Matthias Fuertsch , Stefan Finkbeiner , Christoph Schelling , Stefan Weiss , Thomas Wagner , Christian Maeurer , Ines Breibach
IPC分类号： H01L21/00
CPC分类号： B81C1/00087 , B81B2201/057
摘要： In the manufacture of at least one passage in a silicon wafer, in a first method step, starting from a first side of the wafer, a first recess is produced in the wafer, and in a second method step, starting from a second side of the wafer, a second recess is produced in the wafer. The first recess and the second recess are produced such that together they form a passage between the first and second sides of the silicon wafer.
摘要翻译：在制造硅晶片中的至少一个通道的过程中，在第一方法步骤中，从晶片的第一侧开始，在晶片中产生第一凹槽，并且在第二方法步骤中，从第二方面开始，在晶片中产生第二凹槽。制造第一凹部和第二凹部，使得它们一起形成硅晶片的第一和第二面之间的通道。

10. 发明申请

US20060063293A1 Micromechanical sensor element 有权
标题翻译：微机械传感器元件
公开(公告)号：US20060063293A1
公开(公告)日：2006-03-23
申请号：US11223637
申请日：2005-09-08
申请人： Hubert Benzel , Stefan Finkbeiner , Matthias Illing , Frank Schaefer , Simon Armbruster , Gerhard Lammel , Christoph Schelling , Joerg Brasas
发明人： Hubert Benzel , Stefan Finkbeiner , Matthias Illing , Frank Schaefer , Simon Armbruster , Gerhard Lammel , Christoph Schelling , Joerg Brasas
IPC分类号： H01L21/00
CPC分类号： B81C1/00047 , B81B2203/0109 , B81C2201/0115 , B81C2201/0116 , G01L9/0045
摘要： Described is a method for manufacturing a micromechanical sensor element and a micromechanical sensor element manufactured in particular using such a method which has a hollow space or a cavity and a membrane for detecting a physical variable. Different method steps are performed for manufacturing the sensor element, among other things, a structured etch mask having a plurality of holes or apertures being applied on a semiconductor substrate. Moreover, an etch process is used to create depressions in the semiconductor substrate beneath the holes in the structured etch mask. Anodization of the semiconductor material is subsequently carried out, the anodization taking place preferably starting from the created depressions in the semiconductor substrate. Due to this process, porous areas are created beneath the depressions, a lattice-like structure made of untreated, i.e., non-anodized, substrate material remaining between the porous areas and the depressions. This lattice-like structure extends preferably from the surface of the semiconductor into the depth. The etch mask for creating the depressions may be removed, optionally prior to or subsequent to the anodization. A temperature treatment is carried out for creating the hollow space and the membrane in the semiconductor substrate which forms the sensor element. During this process, the hollow space is created from the at least one area that has been rendered porous beneath a depression and the membrane above the hollow space is created from the lattice-like structure by rearranging the semiconductor material.
摘要翻译：描述了一种用于制造微机械传感器元件和微机械传感器元件的方法，特别是使用具有中空空间或空腔和用于检测物理变量的膜的方法制造的微机械传感器元件。执行用于制造传感器元件的不同的方法步骤，其中包括施加在半导体衬底上的多个孔或孔的结构化蚀刻掩模。此外，蚀刻工艺用于在结构化蚀刻掩模中的孔下面的半导体衬底中产生凹陷。随后进行半导体材料的阳极氧化，阳极氧化发生优选从半导体衬底中产生的凹陷开始。由于该过程，在凹陷下方产生多孔区域，由未处理的，即非阳极氧化的衬底材料制成的格状结构保留在多孔区域和凹陷之间。这种格子状结构优选地从半导体的表面延伸到深度。用于产生凹陷的蚀刻掩模可以任选地在阳极氧化之前或之后被去除。进行温度处理，以形成形成传感器元件的半导体衬底中的中空空间和膜。在该过程中，中空空间是从至少一个已经在凹陷下方多孔的区域产生的，并且通过重新排列半导体材料，从网格状结构产生中空空间之上的膜。

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