专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08015289B2 System and method predicting and managing network capacity requirements 有权
标题翻译：网络容量要求的预测和管理系统和方法
公开(公告)号：US08015289B2
公开(公告)日：2011-09-06
申请号：US10733866
申请日：2003-12-11
申请人： Daron Chris Hill , Jonathan McCormack Landon , Terence Raymond Addison
发明人： Daron Chris Hill , Jonathan McCormack Landon , Terence Raymond Addison
IPC分类号： G06F15/173
CPC分类号： H04L41/147 , H04L41/0896 , H04L43/0888 , H04L43/0894 , H04L43/16
摘要： A system and method for maintaining capacity of a network. Instructions are adapted to define future times at which a capacity of the network is evaluated. In addition, instructions are adapted to determine a total capacity of the network (TNC) and a total demand of users (TUD) for the network at each of the future times. As a function of the total capacity of the network (TNC) and the total demand of users (TUD), instructions are adapted to determine a predicted utilization (PU) of the network at each of the future times. By comparing the predicted utilization (PU) to a defined acceptable utilization of the network at each of the future times, instructions are adapted to determine a change in network capacity (DCNC) to be applied to the network at each of the future times in order to increase or decrease the capacity of the network.
摘要翻译：一种用于维护网络容量的系统和方法。适应指令来定义网络容量评估的未来时间。此外，指令适用于确定网络的总容量（TNC）以及在将来的每一个时刻网络的总需求量（TUD）。根据网络总容量（TNC）和用户总需求（TUD）的函数，指令适应于在将来的每一个时刻确定网络的预测利用率（PU）。通过将预测利用率（PU）与将来的每一个时刻的网络的规定的可接受的利用率进行比较，指令适于确定在将来的每个时刻按顺序施加到网络的网络容量（DCNC）的变化增加或减少网络容量。

2. 发明申请

US20070117335A1 DOUBLE-SIDED CONTAINER CAPACITORS USING A SACRIFICIAL LAYER 有权
标题翻译：双面集装箱电容器使用一个真正的层
公开(公告)号：US20070117335A1
公开(公告)日：2007-05-24
申请号：US11625130
申请日：2007-01-19
申请人： Gurtej Sandhu , Kevin Shea , Chris Hill , Kevin Torek
发明人： Gurtej Sandhu , Kevin Shea , Chris Hill , Kevin Torek
IPC分类号： H01L21/336
CPC分类号： H01L28/91 , H01L27/10852
摘要： Double-sided container capacitors are formed using sacrificial layers. A sacrificial layer is formed within a recess in a structural layer. A lower electrode is formed within the recess. The sacrificial layer is removed to create a space to allow access to the sides of the structural layer. The structural layer is removed, creating an isolated lower electrode. The lower electrode can be covered with a capacitor dielectric and upper electrode to form a double-sided container capacitor.
摘要翻译：使用牺牲层形成双面容器电容器。在结构层的凹部内形成牺牲层。下部电极形成在凹部内。去除牺牲层以产生允许接近结构层的侧面的空间。去除结构层，形成隔离的下电极。下电极可以用电容器电介质和上电极覆盖以形成双面容器电容器。

3. 发明申请

US20060265868A1 Inter-metal dielectric fill 审中-公开
公开(公告)号：US20060265868A1
公开(公告)日：2006-11-30
申请号：US11487027
申请日：2006-07-14
申请人： Neal Rueger , Chris Hill , Zailong Bian , John Smythe
发明人： Neal Rueger , Chris Hill , Zailong Bian , John Smythe
IPC分类号： H01R43/00
CPC分类号： H01L21/76837 , H01L21/76834 , H01L23/53223 , H01L23/53295 , H01L2924/0002 , Y10T29/49117 , H01L2924/00
摘要： An inter-metal dielectric (IMD) fill process includes depositing an insulating nanolaminate barrier layer. The nanolaminate is preferably an oxide liner formed by using an alternating layer deposition process. The layer is highly conformal and is an excellent diffusion barrier. Gaps between metal lines are filled using high density plasma chemical vapor deposition with a reactive species gas. The barrier layer protects the metal lines from shorts between neighboring layers. The resulting structure has substantially uneroded metal lines and an insulating IMD fill.

4. 发明申请

US20060046419A1 Double-sided container capacitors using a sacrificial layer 有权
标题翻译：双面容器电容器采用牺牲层
公开(公告)号：US20060046419A1
公开(公告)日：2006-03-02
申请号：US11021639
申请日：2004-12-22
申请人： Gurtej Sandhu , Kevin Shea , Chris Hill , Kevin Torek
发明人： Gurtej Sandhu , Kevin Shea , Chris Hill , Kevin Torek
IPC分类号： H01L21/20
CPC分类号： H01L28/91 , H01L27/10852
摘要： Double-sided container capacitors are formed using sacrificial layers. A sacrificial layer is formed within a recess in a structural layer. A lower electrode is formed within the recess. The sacrificial layer is removed to create a space to allow access to the sides of the structural layer. The structural layer is removed, creating an isolated lower electrode. The lower electrode can be covered with a capacitor dielectric and upper electrode to form a double-sided container capacitor.
摘要翻译：使用牺牲层形成双面容器电容器。在结构层的凹部内形成牺牲层。下部电极形成在凹部内。去除牺牲层以产生允许接近结构层的侧面的空间。去除结构层，形成隔离的下电极。下电极可以用电容器电介质和上电极覆盖以形成双面容器电容器。

5. 发明申请

US20060008972A1 Method of forming trench isolation in the fabrication of integrated circuitry 失效
标题翻译：在集成电路制造中形成沟槽隔离的方法
公开(公告)号：US20060008972A1
公开(公告)日：2006-01-12
申请号：US11215934
申请日：2005-08-31
申请人： Garo Derderian , Chris Hill
发明人： Garo Derderian , Chris Hill
IPC分类号： H01L21/8238
CPC分类号： H01L21/02164 , C23C16/0272 , C23C16/402 , H01L21/02145 , H01L21/02214 , H01L21/02271 , H01L21/31612 , H01L21/76227
摘要： This invention includes methods of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry, and to methods of forming trench isolation in the fabrication of integrated circuitry. In one implementation, a method of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry includes flowing an aluminum containing organic precursor to a chamber containing a semiconductor substrate effective to deposit an aluminum comprising layer over the substrate. An alkoxysilanol is flowed to the substrate comprising the aluminum comprising layer within the chamber effective to deposit a silicon dioxide comprising layer over the substrate. At least one halogen is provided within the chamber during at least one of the aluminum containing organic precursor flowing and the alkoxysilanol flowing under conditions effective to reduce rate of the deposit of the silicon dioxide comprising layer over the substrate than would otherwise occur under identical conditions but for providing the halogen. Other implementations are contemplated.
摘要翻译：本发明包括在制造集成电路中沉积含二氧化硅的层的方法以及在集成电路的制造中形成沟槽隔离的方法。在一个实施方案中，在集成电路的制造中沉积含二氧化硅的层的方法包括将含有铝的有机前体流动到含有半导体衬底的室，该半导体衬底有效地在衬底上沉积含铝层。烷氧基硅烷流到包含室内的包含铝的基材的基材中，有效地将二氧化硅包含层沉积在基材上。在含铝的有机前驱体和烷氧基硅烷中的至少一种中，至少有一个卤素在有效地降低衬底上沉积二氧化硅层的条件下流动的条件下流动，这与在相同条件下将会发生的情况相反，但是用于提供卤素。考虑其他实现。

6. 发明申请

US20100199968A1 PEDESTAL FOR A BURNER OF A HOUSEHOLD APPLIANCE 审中-公开
标题翻译：家用电器的燃烧器
公开(公告)号：US20100199968A1
公开(公告)日：2010-08-12
申请号：US12368493
申请日：2009-02-10
申请人： David Adams , Ben Braden , Russell Dorsten , Jonathan Grey , Donald Hendricks , Chris Hill , David Nowak , Tim Russell , Graham Sadtler , Phil Springer
发明人： David Adams , Ben Braden , Russell Dorsten , Jonathan Grey , Donald Hendricks , Chris Hill , David Nowak , Tim Russell , Graham Sadtler , Phil Springer
IPC分类号： F24C3/08
CPC分类号： F23D14/06 , F23D2900/14042 , F23D2900/14064
摘要： A gas burner of a household cooking appliance is provided. The gas burner includes a burner portion, and a pedestal portion under the burner portion for elevating the burner portion above a cooktop surface of the household cooking appliance. The pedestal portion includes a base portion for mounting with the cooktop surface of the household cooking appliance, and an upper portion that interposes the base portion and the burner portion, and interfaces with the burner portion. A perimeter of the base portion has no mathematical correlation to one of a perimeter of the burner portion and a perimeter of the upper portion.
摘要翻译：提供家用烹饪器具的气体燃烧器。气体燃烧器包括燃烧器部分和在燃烧器部分下方的用于将燃烧器部分升高到家用烹饪器具的炉灶面上方的基座部分。基座部包括用于安装家用烹饪器具的灶面的基座部分和将基部部分和燃烧器部分插入并与燃烧器部分相接合的上部。基部的周边与燃烧器部分的周边和上部的周边之一没有数学关系。

7. 发明申请

US20080223354A1 Method and apparatus for a steam system 有权
标题翻译：蒸汽系统的方法和装置
公开(公告)号：US20080223354A1
公开(公告)日：2008-09-18
申请号：US12075698
申请日：2008-03-13
申请人： Owen Roger McGhee , Chris Hill
发明人： Owen Roger McGhee , Chris Hill
IPC分类号： A21B1/24 , F28B1/02
CPC分类号： A21B3/04 , F28B9/08
摘要： A steam system includes a cooking chamber, a housing comprising a volume of water and an inlet to receive steam, condensate, drain water, and/or weak steam from the cooking chamber, a sensor that detects a temperature of the water, a dispenser that sprays cooling water into the water to reduce the temperature of the water if the temperature exceeds a predetermined level, and an outlet to drain a portion of the water from the housing.
摘要翻译：蒸汽系统包括烹饪室，包括大量水的壳体和用于接收来自烹饪室的蒸汽，冷凝水，排水和/或弱蒸汽的入口，检测水的温度的传感器，分配器如果温度超过预定水平，则将冷却水喷入水中以降低水的温度，以及从壳体排出一部分水的出口。

8. 发明申请

US20060189159A1 Methods of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry, and methods of forming trench isolation in the fabrication of integrated circuitry 失效
标题翻译：在制造集成电路中沉积含二氧化硅的层的方法以及在集成电路的制造中形成沟槽隔离的方法
公开(公告)号：US20060189159A1
公开(公告)日：2006-08-24
申请号：US11404703
申请日：2006-04-14
申请人： Garo Derderian , Chris Hill
发明人： Garo Derderian , Chris Hill
IPC分类号： H01L21/31
CPC分类号： H01L21/02164 , C23C16/0272 , C23C16/402 , H01L21/02145 , H01L21/02214 , H01L21/02271 , H01L21/31612 , H01L21/76227
摘要： This invention includes methods of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry, and to methods of forming trench isolation in the fabrication of integrated circuitry. In one implementation, a method of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry includes flowing an aluminum containing organic precursor to a chamber containing a semiconductor substrate effective to deposit an aluminum comprising layer over the substrate. An alkoxysilanol is flowed to the substrate comprising the aluminum comprising layer within the chamber effective to deposit a silicon dioxide comprising layer over the substrate. At least one halogen is provided within the chamber during at least one of the aluminum containing organic precursor flowing and the alkoxysilanol flowing under conditions effective to reduce rate of the deposit of the silicon dioxide comprising layer over the substrate than would otherwise occur under identical conditions but for providing the halogen. Other implementations are contemplated.
摘要翻译：本发明包括在制造集成电路中沉积含二氧化硅的层的方法以及在集成电路的制造中形成沟槽隔离的方法。在一个实施方案中，在集成电路的制造中沉积含二氧化硅的层的方法包括将含有铝的有机前体流动到含有半导体衬底的室，该半导体衬底有效地在衬底上沉积含铝层。烷氧基硅烷流到包含室内的包含铝的基材的基材中，有效地将二氧化硅包含层沉积在基材上。在含铝的有机前驱体和烷氧基硅烷中的至少一种中，至少有一个卤素在有效地降低衬底上沉积二氧化硅层的条件下流动的条件下流动，这与在相同条件下将会发生的情况相反，但是用于提供卤素。考虑其他实现。

9. 发明申请

US20060046518A1 Method of increasing deposition rate of silicon dioxide on a catalyst 有权
公开(公告)号：US20060046518A1
公开(公告)日：2006-03-02
申请号：US10930149
申请日：2004-08-31
申请人： Chris Hill , Garo Derderian
发明人： Chris Hill , Garo Derderian
IPC分类号： H01L21/31
CPC分类号： C23C16/45534 , C23C16/403 , C23C16/45525 , H01L21/02164 , H01L21/02178 , H01L21/022 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/0228 , H01L21/316 , H01L21/31683 , H01L21/31695
摘要： Methods for forming dielectric layers, and structures and devices resulting from such methods, and systems that incorporate the devices are provided. The invention provides an aluminum oxide/silicon oxide laminate film formed by sequentially exposing a substrate to an organoaluminum catalyst to form a monolayer over the surface, remote plasmas of oxygen and nitrogen to convert the organoaluminum layer to a porous aluminum oxide layer, and a silanol precursor to form a thick layer of silicon dioxide over the porous oxide layer. The process provides an increased rate of deposition of the silicon dioxide, with each cycle producing a thick layer of silicon dioxide of about 120 Å over the layer of porous aluminum oxide.

10. 发明授权

US10655844B2 Pedestal for a burner of a household appliance 有权
公开(公告)号：US10655844B2
公开(公告)日：2020-05-19
申请号：US12368493
申请日：2009-02-10
申请人： David Adams , Ben Braden , Russell Dorsten , Jonathan Grey , Donald Hendricks , Chris Hill , David Nowak , Tim Russell , Graham Sadtler , Phil Springer
发明人： David Adams , Ben Braden , Russell Dorsten , Jonathan Grey , Donald Hendricks , Chris Hill , David Nowak , Tim Russell , Graham Sadtler , Phil Springer
IPC分类号： F23D14/62 , F23D14/06
摘要： A gas burner of a household cooking appliance is provided. The gas burner includes a burner portion, and a pedestal portion under the burner portion for elevating the burner portion above a cooktop surface of the household cooking appliance. The pedestal portion includes a base portion for mounting with the cooktop surface of the household cooking appliance, and an upper portion that interposes the base portion and the burner portion, and interfaces with the burner portion. A perimeter of the base portion has no mathematical correlation to one of a perimeter of the burner portion and a perimeter of the upper portion.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式