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1. 发明授权

US08564123B2 Chip package and fabrication method thereof 有权
标题翻译：芯片封装及其制造方法
公开(公告)号：US08564123B2
公开(公告)日：2013-10-22
申请号：US13011184
申请日：2011-01-21
申请人： Ching-Yu Ni , Chang-Sheng Hsu
发明人： Ching-Yu Ni , Chang-Sheng Hsu
IPC分类号： H01L23/10
CPC分类号： H01L21/78 , B81B7/0051 , B81C2203/0118 , H01L21/76898 , H01L23/3114 , H01L23/481 , H01L23/585 , H01L24/02 , H01L24/11 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/83 , H01L24/93 , H01L24/94 , H01L25/0657 , H01L25/16 , H01L27/14618 , H01L27/14683 , H01L2224/0231 , H01L2224/02313 , H01L2224/02371 , H01L2224/02377 , H01L2224/0239 , H01L2224/0401 , H01L2224/11002 , H01L2224/1132 , H01L2224/11334 , H01L2224/11849 , H01L2224/13022 , H01L2224/13024 , H01L2224/2732 , H01L2224/27618 , H01L2224/29082 , H01L2224/2919 , H01L2224/32225 , H01L2224/83005 , H01L2224/83191 , H01L2224/83192 , H01L2224/8385 , H01L2224/92 , H01L2224/93 , H01L2224/94 , H01L2224/95 , H01L2224/95001 , H01L2924/14 , H01L2924/1461 , H01L2224/83 , H01L2224/11 , H01L2924/3512 , H01L2924/00
摘要： A chip package and a fabrication method thereof are provided according to an embodiment of the invention. The chip package contains a semiconductor substrate having a chip. A packaging layer is disposed over the semiconductor substrate. A spacer is disposed between the semiconductor substrate and the packaging layer, wherein a side surface consisting of the semiconductor substrate, the spacer and the packaging layer has a recess section. The method includes forming a plurality of spacers between a plurality of chips of a semiconductor wafer and a packaging layer, wherein each spacer corresponding to each chip is separated from each other and the spacer is shrunk inward from an edge of the chip to form a recess section and dicing the semiconductor wafer along a scribe line between any two adjacent chips to form a plurality of chip packages.
摘要翻译：根据本发明的实施例提供了芯片封装及其制造方法。芯片封装包含具有芯片的半导体衬底。封装层设置在半导体衬底上。间隔件设置在半导体衬底和封装层之间，其中由半导体衬底，间隔件和封装层组成的侧表面具有凹部。该方法包括在半导体晶片的多个芯片和封装层之间形成多个间隔物，其中对应于每个芯片的每个间隔件彼此分离，并且间隔件从芯片的边缘向内收缩以形成凹部并且沿着任何两个相邻芯片之间的划线切割半导体晶片以形成多个芯片封装。

2. 发明授权

US08431950B2 Light emitting device package structure and fabricating method thereof 有权
标题翻译：发光器件封装结构及其制造方法
公开(公告)号：US08431950B2
公开(公告)日：2013-04-30
申请号：US12471255
申请日：2009-05-22
申请人： Chia-Lun Tsai , Ching-Yu Ni , Wen-Cheng Chien , Shang-Yi Wu , Cheng-Te Chou
发明人： Chia-Lun Tsai , Ching-Yu Ni , Wen-Cheng Chien , Shang-Yi Wu , Cheng-Te Chou
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/385 , H01L33/62 , H01L33/64 , H01L33/642 , H01L2924/0002 , H01L2924/00
摘要： A light emitting device package structure is described. The light emitting device package structure includes a substrate serving as a carrier supporting a light emitting device chip. The substrate and the light emitting device chip have a chip side and a substrate side separately. A first electrode layer is disposed on a first surface of the light emitting device chip and a second electrode layer is disposed on a second surface of the light emitting device chip, in which the first surface and the second surface are not coplanar. A first conductive trace is electrically connected to the first electrode layer and a second conductive trace is electrically connected to the second electrode layer. At least the first conductive trace or the second conductive trace is formed along the chip side and the substrate side simultaneously.
摘要翻译：描述了发光器件封装结构。发光器件封装结构包括用作支撑发光器件芯片的载体的衬底。基板和发光元件芯片分别具有芯片侧和基板侧。第一电极层设置在发光器件芯片的第一表面上，并且第二电极层设置在发光器件芯片的第二表面上，其中第一表面和第二表面不是共面的。第一导电迹线电连接到第一电极层，并且第二导电迹线电连接到第二电极层。至少第一导电迹线或第二导电迹线同时沿着芯片侧和衬底侧形成。

3. 发明申请

US20110140248A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110140248A1
公开(公告)日：2011-06-16
申请号：US13030887
申请日：2011-02-18
申请人： Chia-Lun TSAI , Ching-Yu Ni , Jack Chen , Wen-Cheng Chien
发明人： Chia-Lun TSAI , Ching-Yu Ni , Jack Chen , Wen-Cheng Chien
IPC分类号： H01L23/552 , H01L23/485
CPC分类号： H01L24/11 , H01L2224/0401 , H01L2224/05124 , H01L2224/05155 , H01L2224/05166 , H01L2224/05548 , H01L2224/05644 , H01L2224/13022 , H01L2224/13099 , H01L2224/16 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10329 , H01L2924/12041 , H01L2924/14 , H01L2924/1461 , H01L2924/30105 , H01L2924/3025 , H01L2924/00 , H01L2924/00014 , H01L2924/013
摘要： A semiconductor device and manufacturing method thereof are disclosed. The device comprises a semiconductor die, a passivation layer, a wiring redistribution layer (RDL), an Ni/Au layer, and a solder mask. The semiconductor die comprises a top metal exposed in an active surface thereof. The passivation layer overlies the active surface of the semiconductor die, and comprises a through passivation opening overlying the top metal. The wiring RDL, comprising an Al layer, overlies the passivation layer, and electrically connects to the top metal via the passivation opening. The solder mask overlies the passivation layer and the wiring RDL, exposing a terminal of the wiring RDL.
摘要翻译：公开了一种半导体器件及其制造方法。该器件包括半导体管芯，钝化层，布线再分布层（RDL），Ni / Au层和焊料掩模。半导体管芯包括在其活性表面中暴露的顶部金属。钝化层覆盖半导体管芯的有源表面，并且包括覆盖顶部金属的贯通钝化开口。包括Al层的布线RDL覆盖钝化层，并通过钝化开口电连接到顶部金属。焊接掩模覆盖钝化层和布线RDL，露出布线RDL的端子。

4. 发明申请

US20110042783A1 ELECTRONIC DEVICE AND FABRICATION METHOD THEREOF 有权
标题翻译：电子设备及其制造方法
公开(公告)号：US20110042783A1
公开(公告)日：2011-02-24
申请号：US12843869
申请日：2010-07-26
申请人： Ching-Yu Ni
发明人： Ching-Yu Ni
IPC分类号： H01L29/92 , H01L21/02 , H01L29/86
CPC分类号： H01L28/60 , H01F17/0013 , H01F41/041 , H01L27/12 , H01L28/10
摘要： An electronic device and fabrication method thereof are provided. The electronic device contains a glass substrate, a patterned semiconductor substrate, having at least one opening, disposed on the glass substrate and at least one passive component having a first conductive layer and a second conductive layer, wherein the first conductive layer is disposed between the patterned semiconductor substrate and the glass substrate.
摘要翻译：提供了一种电子设备及其制造方法。该电子装置包括玻璃基板，具有至少一个开口的图案化半导体基板，设置在玻璃基板上，以及至少一个无源部件，具有第一导电层和第二导电层，其中第一导电层设置在图案化的半导体衬底和玻璃衬底。

5. 发明申请

US20100230803A1 ELECTRONIC DEVICE PACKAGE AND METHOD FOR FORMING THE SAME 有权
标题翻译：电子设备包装及其形成方法
公开(公告)号：US20100230803A1
公开(公告)日：2010-09-16
申请号：US12722486
申请日：2010-03-11
申请人： Wen-Cheng CHIEN , Ching-Yu Ni , Shu-Ming Chang
发明人： Wen-Cheng CHIEN , Ching-Yu Ni , Shu-Ming Chang
IPC分类号： H01L23/48 , H01L21/60 , H01L23/488
CPC分类号： B05D1/36 , B81B2207/096 , B81C1/00301 , H01L21/56 , H01L21/6835 , H01L24/19 , H01L24/24 , H01L24/82 , H01L27/14618 , H01L31/02002 , H01L31/0203 , H01L33/486 , H01L2224/04105 , H01L2224/12105 , H01L2224/32225 , H01L2224/73267 , H01L2224/92244 , H01L2924/01078 , H01L2924/12041 , H01L2924/12042 , H01L2924/1461 , H01L2924/15153 , H01L2924/15311 , H01L2924/18162 , H01L2924/00
摘要： An embodiment of the invention provides a method for forming an electronic device package, which includes providing a carrier substrate having an upper surface and an opposite lower surface; forming a cavity from the upper surface of the carrier substrate; disposing an electronic device having a conducting electrode in the cavity; forming a filling layer in the cavity, wherein the filling layer surround the electronic device; thinning the carrier substrate from the lower surface to a predetermined thickness; forming at least a through-hole in the electronic device or the in the carrier substrate; and forming a conducting layer over a sidewall of the through-hole, wherein the conducting layer electrically connects to the conducting electrode.
摘要翻译：本发明的实施例提供了一种形成电子器件封装的方法，该方法包括提供具有上表面和相对下表面的载体衬底; 从所述载体基板的上表面形成空腔; 将具有导电电极的电子设备设置在空腔中; 在所述空腔中形成填充层，其中所述填充层围绕所述电子设备; 将载体基板从下表面变薄到预定厚度; 在电子设备或载体衬底中形成至少一个通孔; 以及在所述通孔的侧壁上形成导电层，其中所述导电层与所述导电电极电连接。

6. 发明授权

US07348218B2 Semiconductor packages and methods of manufacturing thereof 有权
标题翻译：半导体封装及其制造方法
公开(公告)号：US07348218B2
公开(公告)日：2008-03-25
申请号：US11467053
申请日：2006-08-24
申请人： Ching-Yu Ni , Tsorng-Dih Yuan , Hsin-Yu Pan
发明人： Ching-Yu Ni , Tsorng-Dih Yuan , Hsin-Yu Pan
IPC分类号： H01L21/00
CPC分类号： H01L23/433 , H01L24/31 , H01L2224/16225 , H01L2224/27013 , H01L2224/29111 , H01L2224/2919 , H01L2224/32225 , H01L2224/73204 , H01L2224/73253 , H01L2224/83051 , H01L2924/00011 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/1579 , H01L2924/16152 , H01L2924/3011 , H01L2924/3025 , H01L2924/00 , H01L2224/13111 , H01L2924/0665 , H01L2224/0401
摘要： Described are semiconductor package devices with improved reliability and methods of manufacturing thereof. In one embodiment, a package device is disclosed that includes a chip having an active surface and a coupling surface opposite the active surface, where the chip has one or more integrated circuits and bumps. The device also includes a thermal spreader thermally coupled to the coupling surface of the chip for dissipating heat generated by the chip, and a thermal interface material located between the thermal spreader and the coupling surface of the chip for improving the heat dissipation. In addition, the device also includes a boundary material located between the thermal spreader and the coupling surface of the chip, where the boundary material is configured to surround a perimeter of the thermal interface material to maintain the thermal interface material between the thermal spreader and the coupling surface of the chip.
摘要翻译：描述了具有改进的可靠性的半导体封装器件及其制造方法。在一个实施例中，公开了一种封装器件，其包括具有有源表面和与有源表面相对的耦合表面的芯片，其中芯片具有一个或多个集成电路和凸块。该装置还包括热耦合到芯片的耦合表面的散热器，用于散发由芯片产生的热量，以及位于散热器和芯片的耦合表面之间的热界面材料，用于改善散热。此外，该装置还包括位于散热器和芯片的耦合表面之间的边界材料，其中边界材料构造成围绕热界面材料的周边，以将热界面材料保持在散热器和耦合表面的芯片。

7. 发明授权

US08541877B2 Electronic device package and method for fabricating the same 有权
标题翻译：电子器件封装及其制造方法
公开(公告)号：US08541877B2
公开(公告)日：2013-09-24
申请号：US12849089
申请日：2010-08-03
申请人： Chia-Lun Tsai , Ching-Yu Ni , Tien-Hao Huang , Chia-Ming Cheng , Wen-Cheng Chien , Nan-Chun Lin , Wei-Ming Chen , Shu-Ming Chang , Bai-Yao Lou
发明人： Chia-Lun Tsai , Ching-Yu Ni , Tien-Hao Huang , Chia-Ming Cheng , Wen-Cheng Chien , Nan-Chun Lin , Wei-Ming Chen , Shu-Ming Chang , Bai-Yao Lou
IPC分类号： H01L23/48
CPC分类号： H01L24/20 , H01L23/13 , H01L23/3121 , H01L23/3128 , H01L23/49816 , H01L23/5389 , H01L23/544 , H01L24/19 , H01L2223/54426 , H01L2223/54473 , H01L2223/54486 , H01L2224/04105 , H01L2224/12105 , H01L2224/20 , H01L2224/32225 , H01L2224/73267 , H01L2224/83132 , H01L2224/92 , H01L2224/92244 , H01L2924/01005 , H01L2924/01013 , H01L2924/01021 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01074 , H01L2924/01075 , H01L2924/014 , H01L2924/14 , H01L2924/1461 , H01L2924/15153 , H01L2924/15165 , H01L2924/15184 , H01L2224/83 , H01L2224/82 , H01L2924/00
摘要： The invention provides an electronic device package and a method for fabricating the same. The electronic device package includes a carrier wafer. An electronic device chip with a plurality of conductive pads thereon is disposed over the carrier wafer. An isolation laminating layer includes a lower first isolation layer, which covers the carrier wafer and the electronic device chip, and an upper second isolation layer. The isolation laminating layer has a plurality of openings to expose the conductive pads. A plurality of redistribution patterns is conformably formed on the isolation laminating layer and in the openings. The redistribution patterns are electrically connected to the conductive pads, respectively. A plurality of conductive bumps is respectively formed on the redistribution patterns, electrically connected to the conductive pads.
摘要翻译：本发明提供一种电子器件封装及其制造方法。电子器件封装包括载体晶片。具有多个导电焊盘的电子器件芯片设置在载体晶片上。隔离层压层包括覆盖载体晶片和电子器件芯片的下部第一隔离层和上部第二隔离层。隔离层压层具有多个开口以露出导电垫。在隔离层压层和开口中顺应地形成多个再分配图案。再分布图案分别电连接到导电焊盘。多个导电凸块分别形成在再分布图案上，电连接到导电焊盘。

8. 发明申请

US20100289092A1 POWER MOSFET PACKAGE 有权
标题翻译：功率MOSFET封装
公开(公告)号：US20100289092A1
公开(公告)日：2010-11-18
申请号：US12756915
申请日：2010-04-08
申请人： Baw-Ching PERNG , Ying-Nan Wen , Shu-Ming Chang , Ching-Yu Ni , Yun-Jui Hsieh , Wei-Ming Chen , Chia-Lun Tsai , Chia-Ming Cheng
发明人： Baw-Ching PERNG , Ying-Nan Wen , Shu-Ming Chang , Ching-Yu Ni , Yun-Jui Hsieh , Wei-Ming Chen , Chia-Lun Tsai , Chia-Ming Cheng
IPC分类号： H01L29/78 , H01L23/538
CPC分类号： H01L29/78 , H01L23/3114 , H01L23/481 , H01L23/492 , H01L24/13 , H01L24/16 , H01L29/0646 , H01L29/0653 , H01L29/0878 , H01L29/1095 , H01L29/41741 , H01L29/41766 , H01L29/7802 , H01L29/7809 , H01L2224/05001 , H01L2224/05009 , H01L2224/05022 , H01L2224/05572 , H01L2224/16 , H01L2924/00014 , H01L2924/01021 , H01L2924/13091 , H01L2224/05599 , H01L2224/05099
摘要： A power MOSFET package includes a semiconductor substrate having opposite first and second surfaces, having a first conductivity type, and forming a drain region, a doped region extending downward from the first surface and having a second conductivity type, a source region in the doped region and having the first conductivity type, a gate overlying or buried under the first surface, wherein a gate dielectric layer is between the gate and the semiconductor substrate, a first conducting structure overlying the semiconductor substrate, having a first terminal, and electrically connecting the drain region, a second conducting structure overlying the semiconductor substrate, having a second terminal, and electrically connecting the source region, a third conducting structure overlying the semiconductor substrate, having a third terminal, and electrically connecting the gate, wherein the first, the second, and the third terminals are substantially coplanar, and a protection layer between the semiconductor substrate and the terminals.
摘要翻译：功率MOSFET封装包括具有相反的第一和第二表面的半导体衬底，具有第一导电类型，并形成漏极区，从第一表面向下延伸并具有第二导电类型的掺杂区，掺杂区中的源极区并且具有第一导电类型，覆盖或掩埋在第一表面下方的栅极，其中栅极电介质层位于栅极和半导体衬底之间，覆盖半导体衬底的第一导电结构，具有第一端子，并且电连接漏极区域，覆盖半导体衬底的第二导电结构，具有第二端子，并且电连接源极区域，覆盖半导体衬底的第三导电结构，具有第三端子和电连接栅极，其中第一，第二，并且第三端子基本上共面，并且第三端子之间的保护层 e半导体衬底和端子。

9. 发明授权

US07271480B2 Constraint stiffener design 有权
标题翻译：约束加强筋设计
公开(公告)号：US07271480B2
公开(公告)日：2007-09-18
申请号：US11237924
申请日：2005-09-29
申请人： Kuo-Chin Chang , Ching-Yu Ni
发明人： Kuo-Chin Chang , Ching-Yu Ni
IPC分类号： H01L23/20
CPC分类号： H01L23/16 , H01L23/36 , H01L23/562 , H01L2224/16 , H01L2224/73253 , H01L2924/01019 , H01L2924/15311
摘要： A constraint stiffener for reinforcing an integrated circuit package is provided. In one embodiment, the constraint stiffener comprises a rigid, planar base element for bonding to an integrated circuit substrate. The base element has a plurality of elongated support members, and the base element has an opening therein for surrounding an integrated circuit. The base element and support members reduce warpage due to thermal expansion mismatches between at least the integrated circuit and the substrate. In one embodiment, the elongated support members are detachable from the corners of the base element. In another embodiment, the elongated support members have means for attaching and detaching to the corners of the base element. In yet another embodiment, the elongated support members are detachable from about the midsections of the base element. In another embodiment, the elongated support members have means for attaching and detaching to the midsections of the base element.
摘要翻译：提供了用于加强集成电路封装的约束加强件。在一个实施例中，约束加强件包括用于结合到集成电路基板的刚性平面基座元件。基座元件具有多个细长的支撑构件，并且基座元件具有用于围绕集成电路的开口。基部元件和支撑构件由于至少集成电路和基板之间的热膨胀失配而减少翘曲。在一个实施例中，细长支撑构件可从基座元件的角部拆卸。在另一个实施例中，细长支撑构件具有用于附接和分离到基部元件的角部的装置。在另一个实施例中，细长的支撑构件可从基部元件的中央部分的周围拆卸。在另一个实施例中，细长的支撑构件具有用于附接和分离到基部元件的中部的装置。

10. 发明授权

US08410599B2 Power MOSFET package 有权
标题翻译：功率MOSFET封装
公开(公告)号：US08410599B2
公开(公告)日：2013-04-02
申请号：US12756915
申请日：2010-04-08
申请人： Baw-Ching Perng , Ying-Nan Wen , Shu-Ming Chang , Ching-Yu Ni , Yun-Jui Hsieh , Wei-Ming Chen , Chia-Lun Tsai , Chia-Ming Cheng
发明人： Baw-Ching Perng , Ying-Nan Wen , Shu-Ming Chang , Ching-Yu Ni , Yun-Jui Hsieh , Wei-Ming Chen , Chia-Lun Tsai , Chia-Ming Cheng
IPC分类号： H01L23/04
CPC分类号： H01L29/78 , H01L23/3114 , H01L23/481 , H01L23/492 , H01L24/13 , H01L24/16 , H01L29/0646 , H01L29/0653 , H01L29/0878 , H01L29/1095 , H01L29/41741 , H01L29/41766 , H01L29/7802 , H01L29/7809 , H01L2224/05001 , H01L2224/05009 , H01L2224/05022 , H01L2224/05572 , H01L2224/16 , H01L2924/00014 , H01L2924/01021 , H01L2924/13091 , H01L2224/05599 , H01L2224/05099
摘要： A power MOSFET package includes a semiconductor substrate having opposite first and second surfaces, having a first conductivity type, and forming a drain region, a doped region extending downward from the first surface and having a second conductivity type, a source region in the doped region and having the first conductivity type, a gate overlying or buried under the first surface, wherein a gate dielectric layer is between the gate and the semiconductor substrate, a first conducting structure overlying the semiconductor substrate, having a first terminal, and electrically connecting the drain region, a second conducting structure overlying the semiconductor substrate, having a second terminal, and electrically connecting the source region, a third conducting structure overlying the semiconductor substrate, having a third terminal, and electrically connecting the gate, wherein the first, the second, and the third terminals are substantially coplanar, and a protection layer between the semiconductor substrate and the terminals.
摘要翻译：功率MOSFET封装包括具有相反的第一和第二表面的半导体衬底，具有第一导电类型，并形成漏极区，从第一表面向下延伸并具有第二导电类型的掺杂区，掺杂区中的源极区并且具有第一导电类型，覆盖或掩埋在第一表面下方的栅极，其中栅极电介质层位于栅极和半导体衬底之间，覆盖半导体衬底的第一导电结构，具有第一端子，并且电连接漏极区域，覆盖半导体衬底的第二导电结构，具有第二端子，并且电连接源极区域，覆盖半导体衬底的第三导电结构，具有第三端子和电连接栅极，其中第一，第二，并且第三端子基本上共面，并且第三端子之间的保护层 e半导体衬底和端子。

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