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1. 发明授权

US08158015B2 Fitting methodology of etching times determination for a mask to provide critical dimension and phase control 有权
标题翻译：用于掩模的蚀刻时间确定的拟合方法以提供关键尺寸和相位控制
公开(公告)号：US08158015B2
公开(公告)日：2012-04-17
申请号：US11686773
申请日：2007-03-15
申请人： Cheng-Ming Lin , Joy Huang
发明人： Cheng-Ming Lin , Joy Huang
IPC分类号： G01L21/30
CPC分类号： G03F1/80 , G03F1/32
摘要： The present disclosure provides a mask and a method of determining etching times for etching the mask. In one embodiment, values for a main etching time and an over-etching time are determined simultaneously based on a desired critical dimension (CD) parameter and a desired phase parameter for the mask.
摘要翻译：本公开提供了一种掩模和确定用于蚀刻掩模的蚀刻时间的方法。在一个实施例中，基于期望的临界尺寸（CD）参数和掩模的期望的相位参数同时确定主蚀刻时间和过蚀刻时间的值。

2. 发明申请

US20090025810A1 MICRO-VORTEX GENERATOR 审中-公开
标题翻译：微型VORTEX发电机
公开(公告)号：US20090025810A1
公开(公告)日：2009-01-29
申请号：US11867163
申请日：2007-10-04
申请人： Andrew M. Wo , Cheng-Ming Lin , Yu-Shiang Lai
发明人： Andrew M. Wo , Cheng-Ming Lin , Yu-Shiang Lai
IPC分类号： F15C3/00
CPC分类号： B01F11/0258 , B01F13/0059 , B01L3/5027 , H02K33/18 , Y10T137/2087
摘要： The present invention relates to a MEMS-based micro-oscillator which can generate specific vortical pattern in a micro-channel. The micro-vortex generator is composed of a suspended bridge with a gold-plated, rectangular flat-plate as the primary structure. When an AC current passed through the gold leads under an external magnetic field, the plate will oscillate due to Lorenz force, thereby generating micro-vortices.
摘要翻译：本发明涉及一种可在微通道中产生特定涡旋图案的基于MEMS的微振荡器。微涡流发生器由具有镀金，矩形平板作为主要结构的悬挂桥组成。当交流电流在外部磁场下通过金引线时，板将由于洛伦兹力而振荡，从而产生微旋涡。

3. 发明申请

US20080265834A1 SOLAR-POWERED PHOTOELECTRIC APPARATUS 审中-公开
标题翻译：太阳能光电设备
公开(公告)号：US20080265834A1
公开(公告)日：2008-10-30
申请号：US12105793
申请日：2008-04-18
申请人： Cheng Ming Lin , Jian Hung Lai
发明人： Cheng Ming Lin , Jian Hung Lai
IPC分类号： H02J7/00
CPC分类号： H02J7/355 , H02J2007/0062
摘要： A solar-powered photoelectric apparatus comprises a solar cell panel, a rechargeable battery and one or more photoelectric devices. The solar cell panel absorbs light to generate electricity and the electricity is stored in the photoelectric device. The photoelectric device uses power from the rechargeable battery to generate light. In consideration of times of insufficient light to the solar-powered photoelectric apparatus, the photoelectric apparatus may further comprise a USB connector as an interface for charging the rechargeable battery.
摘要翻译：太阳能光电设备包括太阳能电池板，可充电电池和一个或多个光电装置。太阳能电池板吸收光以发电，电存储在光电装置中。光电设备使用可充电电池的电源产生光。考虑到对太阳能光电设备的光线不足的时间，光电设备还可以包括作为用于对可再充电电池充电的接口的USB连接器。

4. 发明申请

US20080226991A1 Fitting Methodology of Etching Times Determination for a Mask to Provide Critical Dimension and Phase Control 有权
标题翻译：蚀刻时间的拟合方法确定掩模以提供关键尺寸和相位控制
公开(公告)号：US20080226991A1
公开(公告)日：2008-09-18
申请号：US11686773
申请日：2007-03-15
申请人： Cheng-Ming Lin , Joy Huang
发明人： Cheng-Ming Lin , Joy Huang
IPC分类号： G03F1/00
CPC分类号： G03F1/80 , G03F1/32
摘要： The present disclosure provides a mask and a method of determining etching times for etching the mask. In one embodiment, values for a main etching time and an over-etching time are determined simultaneously based on a desired critical dimension (CD) parameter and a desired phase parameter for the mask.
摘要翻译：本公开提供了一种掩模和确定用于蚀刻掩模的蚀刻时间的方法。在一个实施例中，基于期望的临界尺寸（CD）参数和掩模的期望的相位参数同时确定主蚀刻时间和过蚀刻时间的值。

5. 发明申请

US20060234141A1 SINGLE TRENCH REPAIR METHOD WITH ETCHED QUARTZ FOR ATTENUATED PHASE SHIFTING MASK 有权
标题翻译：具有蚀刻石墨的单层激光修复方法，用于衰减相位移位掩模
公开(公告)号：US20060234141A1
公开(公告)日：2006-10-19
申请号：US11425423
申请日：2006-06-21
申请人： Cheng-Ming Lin
发明人： Cheng-Ming Lin
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F1/32 , G03F1/72
摘要： In accordance with the objectives of the invention a new method is provided for the repair of an attenuated phase shifting mask having a contact pattern. The invention etches a single trench in the quartz substrate of the phase shifter mask and removes the impact of a void in the phase shifter material. Alternatively, the invention provides for first conventionally restoring the original dimensions of a contact hole in which a pinhole is present and then etching a single or a double trench in the exposed substrate of the restored contact opening.
摘要翻译：根据本发明的目的，提供了一种用于修复具有接触图案的衰减相移掩模的新方法。本发明蚀刻移相器掩模的石英衬底中的单个沟槽并去除移相器材料中空隙的冲击。或者，本发明提供了首先常规地恢复其中存在针孔的接触孔的原始尺寸，然后在恢复的接触开口的暴露的基底中蚀刻单个或双沟槽。

6. 发明授权

US07029802B2 Embedded bi-layer structure for attenuated phase shifting mask 有权
标题翻译：用于衰减相移掩模的嵌入式双层结构
公开(公告)号：US07029802B2
公开(公告)日：2006-04-18
申请号：US10462359
申请日：2003-06-16
申请人： Cheng-ming Lin
发明人： Cheng-ming Lin
IPC分类号： G03F9/00
CPC分类号： G03F1/32
摘要： An embedded bi-layer structure for an attenuated phase-shifting mask comprises an inner layer with lower transmittance, formed on a substrate; and an outer layer, formed on the inner layer, with higher transmittance and being more chemically stable than the inner layer. A method of forming such an embedded bi-layer structure is provided.
摘要翻译：用于衰减的相移掩模的嵌入式双层结构包括形成在衬底上的具有较低透射率的内层; 和形成在内层上的外层，具有更高的透射率并且比内层更具化学稳定性。提供了一种形成这种嵌入式双层结构的方法。

7. 发明申请

US20100271612A1 METHOD AND PELLICLE MOUNTING APPARATUS FOR REDUCING PELLICLE INDUCED DISTORTION 有权
标题翻译：用于减少脂肪诱导失败的方法和油墨安装装置
公开(公告)号：US20100271612A1
公开(公告)日：2010-10-28
申请号：US12767152
申请日：2010-04-26
申请人： Cheng-Ming LIN , Chien-Chao HUANG , Jong-Yuh CHANG , Chia-Wei CHANG , Boming HSU
发明人： Cheng-Ming LIN , Chien-Chao HUANG , Jong-Yuh CHANG , Chia-Wei CHANG , Boming HSU
IPC分类号： G03B27/58 , H01L21/31
CPC分类号： G03F7/70983 , G03B27/58 , G03F1/64 , G03F7/70783
摘要： An apparatus for mounting a pellicle onto a mask is provided. In one embodiment, the apparatus comprises a base provided with a track; a dummy plate holder coupled to the base, the dummy plate holder for receiving a dummy plate having an elevated portion on one side thereof; a mask holder for receiving a mask, the mask holder slidably coupled to the base; a pellicle holder for receiving a pellicle frame, the pellicle holder slidably coupled to the base; and drive means being adapted to drive the pellicle holder along the track towards the dummy plate holder, wherein during operation when the pellicle frame is mounted onto the mask causing the mask to contact the dummy plate, the mounting pressure in the mask is distributed by way of the elevated portion in the dummy plate, thus reducing distortion in the mask.
摘要翻译：提供了一种将防护薄膜组件安装在掩模上的装置。在一个实施例中，该装置包括设置有轨道的基座; 耦合到基座的虚拟板保持器，用于接收在其一侧具有升高部分的虚拟板的虚拟板保持器; 用于接收掩模的掩模保持器，所述掩模保持器可滑动地联接到所述基部; 用于接收防护薄膜组件框架的防护薄膜组件保持器，所述防护薄膜组件保持器可滑动地联接到所述基座; 驱动装置适于将防护薄膜组件保持器沿轨道朝向虚拟板支架驱动，其中在操作期间当防护薄膜组件框架安装在掩模上使得掩模与虚拟板接触时，掩模中的安装压力被分配的虚拟板中的升高部分，从而减少掩模中的变形。

8. 发明申请

US20080169058A1 Artificial Leather with Color Layers and Method for Making The Same 审中-公开
标题翻译：具有彩色层的人造革及其制造方法
公开(公告)号：US20080169058A1
公开(公告)日：2008-07-17
申请号：US11733366
申请日：2007-04-10
申请人： Chung-Chih Feng , Pai-Hsiang Wu , Yuan-Fang Tsai , Jung-Hsien Cheng , Cheng-Ming Lin , Chien-Chia Huang
发明人： Chung-Chih Feng , Pai-Hsiang Wu , Yuan-Fang Tsai , Jung-Hsien Cheng , Cheng-Ming Lin , Chien-Chia Huang
IPC分类号： B32B27/12 , B32B27/20 , D06N3/18
CPC分类号： B32B27/12 , D06N3/0063 , D06N3/0097 , D06N3/145 , Y10T428/24438 , Y10T428/31504 , Y10T442/3854 , Y10T442/674
摘要： A method is provided for making artificial leather upside down. In the method, an upper color layer is provided on releasing paper and the upper color layer is dried. A lower color layer is provided on the upper color layer and the lower color layer is dried. A paste layer is provided on the lower color layer and the pate layer is preliminarily dried. A substrate is attached to the paste layer. The paste layer is dried. The releasing paper is removed.
摘要翻译：提供了将人造革倒立制造的方法。在该方法中，在剥离纸上设置上色层，并且上色层被干燥。在上色层上设置较低色层，下层彩色层被干燥。在下色层上设置糊状层，预先干燥头层。衬底附着到膏层上。将糊层干燥。取出纸张。

9. 发明授权

US07008730B2 Application of high transmittance attenuating phase shifting mask with dark tone for sub-0.1 micrometer logic device contact hole pattern in 193 NM lithography 有权
标题翻译：在193 NM光刻中应用具有暗色调的高透光率衰减相移掩模，用于亚-0.1微米逻辑器件接触孔图案
公开(公告)号：US07008730B2
公开(公告)日：2006-03-07
申请号：US10338118
申请日：2003-01-07
申请人： Cheng-Ming Lin
发明人： Cheng-Ming Lin
IPC分类号： G03F9/00 , G03C5/00
CPC分类号： G03F1/32 , G03F1/54
摘要： An attenuating phase shifting mask for forming contact holes in a layer of negative resist, a method of forming the mask, and a method of forming the contact holes are described. The mask is formed from a mask blank having a layer of attenuating phase shifting material formed on a transparent mask blank. The attenuating phase shifting material has a transmittance of greater than 20% and between about 20% and 50% for light having a wavelength of 193 nanometers. The mask is a dark tone mask having mask elements formed of the attenuating phase shifting material at the locations of the mask corresponding to the locations of the contact holes. The mask is used to expose a layer of negative resist which is then developed to form the contact holes.
摘要翻译：描述了用于在负抗蚀剂层中形成接触孔的衰减相移掩模，形成掩模的方法以及形成接触孔的方法。掩模由具有形成在透明掩模板上的衰减相移材料层的掩模坯料形成。衰减相移材料对于波长为193纳米的光具有大于20％的透射率和约20％至50％的透射率。掩模是在掩模对应于接触孔的位置的位置处由衰减相移材料形成的掩模元件的暗色调掩模。该掩模用于暴露一层负性抗蚀剂，然后将其显影以形成接触孔。

10. 发明授权

US06905802B2 Multiple exposure method for forming a patterned photoresist layer 失效
标题翻译：用于形成图案化光致抗蚀剂层的多重曝光方法
公开(公告)号：US06905802B2
公开(公告)日：2005-06-14
申请号：US10637862
申请日：2003-08-09
申请人： Cheng-Ming Lin
发明人： Cheng-Ming Lin
IPC分类号： G03C5/00 , G03F1/00 , G03F7/00 , G03F7/20 , G03F9/00
CPC分类号： G03F1/32 , G03F7/70283 , G03F7/7045 , G03F7/70466 , Y10S430/143 , Y10S430/146
摘要： A method for exposing a blanket photoresist layer employs: (1) a first direct write exposure of the blanket photoresist layer to form therein an exposed peripheral sub-region of a desired exposed pattern; and (2) a second masked photoexposure of the blanket photoresist layer to form therein a masked photoexposed bulk sub-region of the desired exposed pattern which overlaps but does not extend beyond the exposed peripheral sub-region. The once masked photoexposed once direct write exposed blanket photoresist layer may be developed to form a patterned photoresist layer employed for forming a patterned opaque layer border within an opaque bordered attenuated phase shift mask.
摘要翻译：用于曝光橡皮布光致抗蚀剂层的方法采用：（1）毯式光致抗蚀剂层的第一直接写入曝光，以在其中形成所需曝光图案的暴露外围子区域; 和（2）所述覆盖光致抗蚀剂层的第二掩蔽曝光，以在其中形成与所暴露的外围子区域重叠但不延伸超过所述暴露的外围子区域的所需曝光图案的被掩蔽的光曝光的体区子区域。可以显影一次被曝光的一次直接写曝光的覆盖光致抗蚀剂层，以形成用于在不透明的边界衰减相移掩模内形成图案化不透明层边界的图案化光致抗蚀剂层。

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