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1. 发明申请

US20140054745A1 MEMORY CELL SUPPORT LATTICE 有权
标题翻译：记忆体支持实验室
公开(公告)号：US20140054745A1
公开(公告)日：2014-02-27
申请号：US13590791
申请日：2012-08-21
申请人： Zhimin Song , Che-Chi Lee , Brett Busch
发明人： Zhimin Song , Che-Chi Lee , Brett Busch
IPC分类号： H01L27/108 , H01L21/8242
CPC分类号： H01L27/10852 , H01L21/02266 , H01L21/31116 , H01L21/31144 , H01L27/10814 , H01L27/10817 , H01L28/91
摘要： Memory cell support lattices and methods of forming the same are described herein. As an example, a method of forming a memory cell support lattice includes forming a mask on a number of capacitor elements in an array, such that a space between vertically and horizontally adjacent capacitor elements is fully covered and a space between diagonally adjacent capacitor elements is partially covered and forming a support lattice in a support material by etching the support material to remove portions of the support material below the openings in the mask.
摘要翻译：本文描述了记忆单元支撑晶格及其形成方法。作为示例，形成存储单元支撑晶格的方法包括在阵列中的多个电容器元件上形成掩模，使得垂直和水平相邻的电容器元件之间的空间被完全覆盖，并且对角相邻的电容器元件之间的空间是部分地覆盖并通过蚀刻支撑材料在支撑材料中形成支撑格架，以将掩模中开口下方的支撑材料的部分去除。

2. 发明授权

US08518788B2 Methods of forming a plurality of capacitors 有权
公开(公告)号：US08518788B2
公开(公告)日：2013-08-27
申请号：US12854446
申请日：2010-08-11
申请人： Che-Chi Lee
发明人： Che-Chi Lee
IPC分类号： H01L21/20
CPC分类号： H01L28/40 , H01L27/0207 , H01L27/10817 , H01L27/10852 , H01L27/10894 , H01L27/10897 , H01L28/87 , H01L28/88 , H01L28/92
摘要： A method of forming a plurality of capacitors includes providing a plurality of capacitor electrodes, an elevationally inner insulative retaining material received laterally about the capacitor electrodes, an elevationally outer insulative retaining material received laterally about the capacitor electrodes, a first material received laterally about the capacitor electrodes elevationally inward of the inner insulative retaining material, and a second material received laterally about the capacitor electrodes elevationally between the inner and outer insulative retaining materials. Openings are anisotropically etched to extend through the outer insulative retaining material and the second material. After the anisotropic etching, remaining of the second material is isotropically etched through the openings from being received laterally about the capacitor electrodes between the inner and outer insulative retaining materials. The isotropic etching of the second material is conducted selectively relative to the capacitor electrodes and the inner and outer insulative retaining materials. The capacitor electrodes are ultimately incorporated into a plurality of capacitors.

3. 发明申请

US20120040507A1 METHODS OF FORMING A PLURALITY OF CAPACITORS 有权
标题翻译：形成大量电容器的方法
公开(公告)号：US20120040507A1
公开(公告)日：2012-02-16
申请号：US12854446
申请日：2010-08-11
申请人： Che-Chi Lee
发明人： Che-Chi Lee
IPC分类号： H01L21/02
CPC分类号： H01L28/40 , H01L27/0207 , H01L27/10817 , H01L27/10852 , H01L27/10894 , H01L27/10897 , H01L28/87 , H01L28/88 , H01L28/92
摘要： A method of forming a plurality of capacitors includes providing a plurality of capacitor electrodes, an elevationally inner insulative retaining material received laterally about the capacitor electrodes, an elevationally outer insulative retaining material received laterally about the capacitor electrodes, a first material received laterally about the capacitor electrodes elevationally inward of the inner insulative retaining material, and a second material received laterally about the capacitor electrodes elevationally between the inner and outer insulative retaining materials. Openings are anisotropically etched to extend through the outer insulative retaining material and the second material. After the anisotropic etching, remaining of the second material is isotropically etched through the openings from being received laterally about the capacitor electrodes between the inner and outer insulative retaining materials. The isotropic etching of the second material is conducted selectively relative to the capacitor electrodes and the inner and outer insulative retaining materials. The capacitor electrodes are ultimately incorporated into a plurality of capacitors.
摘要翻译：形成多个电容器的方法包括提供多个电容器电极，围绕电容器电极横向接收的垂直内部绝缘保持材料，围绕电容器电极横向接收的垂直外绝缘保持材料，围绕电容器横向接收的第一材料内绝缘保持材料的电极向内垂直的电极，以及在内绝缘保持材料和外绝缘保持材料之间的电容器电极横向接收的第二材料。开口各向异性地蚀刻以延伸穿过外绝缘保持材料和第二材料。在各向异性蚀刻之后，第二材料的剩余部分通过开口进行各向同性蚀刻，从而在内绝缘保持材料和外绝缘保持材料之间围绕电容器电极横向接收。第二材料的各向同性蚀刻相对于电容器电极和内外绝缘保持材料选择性地进行。电容器电极最终并入多个电容器中。

4. 发明授权

US09184167B2 Memory cell support lattice 有权
标题翻译：存储单元支持格
公开(公告)号：US09184167B2
公开(公告)日：2015-11-10
申请号：US13590791
申请日：2012-08-21
申请人： Zhimin Song , Che-Chi Lee , Brett Busch
发明人： Zhimin Song , Che-Chi Lee , Brett Busch
IPC分类号： H01L27/108 , H01L21/8242 , H01L49/02
CPC分类号： H01L27/10852 , H01L21/02266 , H01L21/31116 , H01L21/31144 , H01L27/10814 , H01L27/10817 , H01L28/91
摘要： Memory cell support lattices and methods of forming the same are described herein. As an example, a method of forming a memory cell support lattice includes forming a mask on a number of capacitor elements in an array, such that a space between vertically and horizontally adjacent capacitor elements is fully covered and a space between diagonally adjacent capacitor elements is partially covered and forming a support lattice in a support material by etching the support material to remove portions of the support material below the openings in the mask.
摘要翻译：本文描述了记忆单元支撑晶格及其形成方法。作为示例，形成存储单元支撑晶格的方法包括在阵列中的多个电容器元件上形成掩模，使得垂直和水平相邻的电容器元件之间的空间被完全覆盖，并且对角相邻的电容器元件之间的空间是部分地覆盖并通过蚀刻支撑材料在支撑材料中形成支撑格架，以将掩模中开口下方的支撑材料的部分去除。

5. 发明授权

US08921977B2 Capacitor array and method of fabricating the same 有权
标题翻译：电容阵列及其制造方法
公开(公告)号：US08921977B2
公开(公告)日：2014-12-30
申请号：US13333564
申请日：2011-12-21
申请人： Jen Jui Huang , Che Chi Lee , Shih Shu Tsai , Cheng Shun Chen , Shao Ta Hsu , Chao Wen Lay , Chun I Hsieh , Ching Kai Lin
发明人： Jen Jui Huang , Che Chi Lee , Shih Shu Tsai , Cheng Shun Chen , Shao Ta Hsu , Chao Wen Lay , Chun I Hsieh , Ching Kai Lin
IPC分类号： H01L29/92 , H01L27/108 , H01L27/105
CPC分类号： H01L27/10817 , H01L27/105 , H01L27/10852 , H01L28/91
摘要： A capacitor array includes a plurality of capacitors and a support frame. Each capacitor includes an electrode. The support frame supports the plurality of electrodes and includes a plurality of support structures corresponding to the plurality of electrodes. Each support structure may surround the respective electrode. The support frame may include oxide of a doped oxidizable material.
摘要翻译：电容器阵列包括多个电容器和支撑框架。每个电容器包括电极。支撑框架支撑多个电极，并且包括对应于多个电极的多个支撑结构。每个支撑结构可以围绕相应的电极。支撑框架可以包括掺杂可氧化材料的氧化物。

6. 发明申请

US20130161786A1 CAPACITOR ARRAY AND METHOD OF FABRICATING THE SAME 有权
标题翻译：电容阵列及其制造方法
公开(公告)号：US20130161786A1
公开(公告)日：2013-06-27
申请号：US13333564
申请日：2011-12-21
申请人： Jen Jui Huang , Che Chi Lee , Shih Shu Tsai , Cheng Shun Chen , Shao Ta Hsu , Chao Wen Lay , Chun I. Hsieh , Ching Kai Lin
发明人： Jen Jui Huang , Che Chi Lee , Shih Shu Tsai , Cheng Shun Chen , Shao Ta Hsu , Chao Wen Lay , Chun I. Hsieh , Ching Kai Lin
IPC分类号： H01L29/92 , H01L21/02
CPC分类号： H01L27/10817 , H01L27/105 , H01L27/10852 , H01L28/91
摘要： A capacitor array includes a plurality of capacitors and a support frame. Each capacitor includes an electrode. The support frame supports the plurality of electrodes and includes a plurality of support structures corresponding to the plurality of electrodes. Each support structure may surround the respective electrode. The support frame may include oxide of a doped oxidizable material.
摘要翻译：电容器阵列包括多个电容器和支撑框架。每个电容器包括电极。支撑框架支撑多个电极，并且包括对应于多个电极的多个支撑结构。每个支撑结构可以围绕相应的电极。支撑框架可以包括掺杂可氧化材料的氧化物。

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