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    • 8. 发明授权
    • Light emitting device and fabrication method thereof
    • 发光元件及其制造方法
    • US08546819B2
    • 2013-10-01
    • US13235063
    • 2011-09-16
    • Yeo Jin YoonChang Yeon Kim
    • Yeo Jin YoonChang Yeon Kim
    • H01L27/15
    • H01L33/60H01L21/28H01L21/306H01L33/0079H01L33/22
    • A method of fabricating a vertical light emitting diode including: growing a low doped first semiconductor layer on a sacrificial substrate; forming an aluminum layer on the low doped first semiconductor; forming an AAO layer having a large number of holes formed therein by anodizing the aluminum layer; etching and patterning the low doped first semiconductor layer using the aluminum layer as a shadow mask, thereby forming grooves; removing the aluminum layer remaining; sequentially forming a high doped first semiconductor layer, an active layer and a second semiconductor layer on the low doped first semiconductor layer with the grooves; forming a metal reflective layer and a conductive substrate on the second semiconductor layer; separating the sacrificial substrate; and forming an electrode pad on the other surface of the low doped first semiconductor layer, the electrode pad filled in the grooves and in ohmic contact with the high doped first semiconductor.
    • 一种制造垂直发光二极管的方法,包括:在牺牲衬底上生长低掺杂的第一半导体层; 在所述低掺杂的第一半导体上形成铝层; 通过阳极氧化铝层形成其中形成有大量孔的AAO层; 使用铝层作为荫罩来蚀刻和图案化低掺杂的第一半导体层,从而形成凹槽; 去除剩余的铝层; 在所述低掺杂的第一半导体层上顺序地形成具有沟槽的高掺杂的第一半导体层,有源层和第二半导体层; 在所述第二半导体层上形成金属反射层和导电基板; 分离牺牲衬底; 以及在所述低掺杂的第一半导体层的另一个表面上形成电极焊盘,所述电极焊盘填充在所述沟槽中并与所述高掺杂的第一半导体欧姆接触。
    • 9. 发明授权
    • Apparatus and method for controlling sleep mode entry in broadband wireless communication system
    • 用于控制宽带无线通信系统中睡眠模式进入的装置和方法
    • US08493899B2
    • 2013-07-23
    • US12009686
    • 2008-01-22
    • Chang-Yeon Kim
    • Chang-Yeon Kim
    • G08C17/00
    • H04W52/0216H04W88/08Y02D70/146
    • A sleep mode entry of a terminal in a broadband wireless communication system is provided. A base station includes an adjuster for, when a first terminal requests a sleep mode entry and lengths of requested sleep interval and listening interval do not meet a certain condition, adjusting the lengths of the sleep interval and the listening interval; and a determiner for setting a distribution of the sleep interval and the listening interval according to the adjustment of the adjuster and determining a sleep mode entry time of a second terminal which enters a sleep mode after the distribution of the sleep interval and the listening interval is set.
    • 提供了宽带无线通信系统中的终端的休眠模式输入。 基站包括用于当第一终端请求睡眠模式条目并且所请求的睡眠间隔和监听间隔的长度不满足特定条件的调整器时,调整睡眠间隔的长度和监听间隔; 以及确定器,用于根据调节器的调整设置睡眠间隔和收听间隔的分布,并且在睡眠间隔和收听间隔的分布之后确定进入睡眠模式的第二终端的睡眠模式进入时间 组。
    • 10. 发明授权
    • Light emitting device and method of manufacturing the same
    • 发光元件及其制造方法
    • US08390002B2
    • 2013-03-05
    • US12251735
    • 2008-10-15
    • Chang Yeon KimYeo Jin Yoon
    • Chang Yeon KimYeo Jin Yoon
    • H01L27/15
    • H01L33/24H01L33/14
    • There are provided a light emitting device and a method of manufacturing the same. A light emitting device according to the present invention includes a substrate; an N-type semiconductor layer, an active layer and a P-type semiconductor layer, sequentially formed on the substrate; one or more trenches formed to expose the N-type semiconductor layer by partially removing at least the P-type semiconductor and active layers; a first insulating layer formed on sidewalls of the trenches; and a conductive layer filled in the trenches having the first insulating layer formed therein. According to the present invention, it is possible to obtain a characteristic of uniform current diffusion, and thus, light is uniformly emitted to thereby enhance the light emitting efficiency.
    • 提供了一种发光器件及其制造方法。 根据本发明的发光器件包括:衬底; 依次形成在基板上的N型半导体层,有源层和P型半导体层; 通过部分去除至少P型半导体和有源层而形成一个或多个沟槽以暴露N型半导体层; 形成在所述沟槽的侧壁上的第一绝缘层; 以及填充在其中形成有第一绝缘层的沟槽中的导电层。 根据本发明,可以获得均匀的电流扩散的特性,从而均匀地发光,从而提高发光效率。