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1. 发明授权

US08546819B2 Light emitting device and fabrication method thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08546819B2
公开(公告)日：2013-10-01
申请号：US13235063
申请日：2011-09-16
申请人： Yeo Jin Yoon , Chang Yeon Kim
发明人： Yeo Jin Yoon , Chang Yeon Kim
IPC分类号： H01L27/15
CPC分类号： H01L33/60 , H01L21/28 , H01L21/306 , H01L33/0079 , H01L33/22
摘要： A method of fabricating a vertical light emitting diode including: growing a low doped first semiconductor layer on a sacrificial substrate; forming an aluminum layer on the low doped first semiconductor; forming an AAO layer having a large number of holes formed therein by anodizing the aluminum layer; etching and patterning the low doped first semiconductor layer using the aluminum layer as a shadow mask, thereby forming grooves; removing the aluminum layer remaining; sequentially forming a high doped first semiconductor layer, an active layer and a second semiconductor layer on the low doped first semiconductor layer with the grooves; forming a metal reflective layer and a conductive substrate on the second semiconductor layer; separating the sacrificial substrate; and forming an electrode pad on the other surface of the low doped first semiconductor layer, the electrode pad filled in the grooves and in ohmic contact with the high doped first semiconductor.
摘要翻译：一种制造垂直发光二极管的方法，包括：在牺牲衬底上生长低掺杂的第一半导体层; 在所述低掺杂的第一半导体上形成铝层; 通过阳极氧化铝层形成其中形成有大量孔的AAO层; 使用铝层作为荫罩来蚀刻和图案化低掺杂的第一半导体层，从而形成凹槽; 去除剩余的铝层; 在所述低掺杂的第一半导体层上顺序地形成具有沟槽的高掺杂的第一半导体层，有源层和第二半导体层; 在所述第二半导体层上形成金属反射层和导电基板; 分离牺牲衬底; 以及在所述低掺杂的第一半导体层的另一个表面上形成电极焊盘，所述电极焊盘填充在所述沟槽中并与所述高掺杂的第一半导体欧姆接触。

2. 发明授权

US08390002B2 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08390002B2
公开(公告)日：2013-03-05
申请号：US12251735
申请日：2008-10-15
申请人： Chang Yeon Kim , Yeo Jin Yoon
发明人： Chang Yeon Kim , Yeo Jin Yoon
IPC分类号： H01L27/15
CPC分类号： H01L33/24 , H01L33/14
摘要： There are provided a light emitting device and a method of manufacturing the same. A light emitting device according to the present invention includes a substrate; an N-type semiconductor layer, an active layer and a P-type semiconductor layer, sequentially formed on the substrate; one or more trenches formed to expose the N-type semiconductor layer by partially removing at least the P-type semiconductor and active layers; a first insulating layer formed on sidewalls of the trenches; and a conductive layer filled in the trenches having the first insulating layer formed therein. According to the present invention, it is possible to obtain a characteristic of uniform current diffusion, and thus, light is uniformly emitted to thereby enhance the light emitting efficiency.
摘要翻译：提供了一种发光器件及其制造方法。根据本发明的发光器件包括：衬底; 依次形成在基板上的N型半导体层，有源层和P型半导体层; 通过部分去除至少P型半导体和有源层而形成一个或多个沟槽以暴露N型半导体层; 形成在所述沟槽的侧壁上的第一绝缘层; 以及填充在其中形成有第一绝缘层的沟槽中的导电层。根据本发明，可以获得均匀的电流扩散的特性，从而均匀地发光，从而提高发光效率。

3. 发明授权

US08053789B2 Light emitting device and fabrication method thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08053789B2
公开(公告)日：2011-11-08
申请号：US12518846
申请日：2007-12-12
申请人： Yeo Jin Yoon , Chang Yeon Kim
发明人： Yeo Jin Yoon , Chang Yeon Kim
IPC分类号： H01L27/15
CPC分类号： H01L33/60 , H01L21/28 , H01L21/306 , H01L33/0079 , H01L33/22
摘要： There is provided a method of fabricating a vertical light emitting diode. The method comprises the steps of: growing a low doped first conductive semiconductor layer on a sacrificial substrate; forming an aluminum layer on the low doped first conductive semiconductor layer; forming an AAO layer having a large number of holes formed therein by performing anodizing treatment of the aluminum layer; etching and patterning the low doped first conductive semiconductor layer using the aluminum layer with a large number of the holes as a shadow mask to expose a portion of the low doped first conductive semiconductor layer, thereby forming a large number of grooves; removing the aluminum layer remaining on the low doped first conductive semiconductor layer; sequentially forming a high doped first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on the low doped first conductive semiconductor layer with a large number of the grooves; forming a metal reflective layer and a conductive substrate on the second conductive semiconductor layer; separating the sacrificial substrate; and forming an electrode pad on the other surface of the low doped first conductive semiconductor layer, the electrode pad being filled in a large number of the grooves to be in ohmic contact with the high doped first conductive semiconductor layer.
摘要翻译：提供了制造垂直发光二极管的方法。该方法包括以下步骤：在牺牲衬底上生长低掺杂的第一导电半导体层; 在所述低掺杂的第一导电半导体层上形成铝层; 通过对铝层进行阳极氧化处理，形成其中形成有大量孔的AAO层; 使用具有大量孔的铝层作为荫罩来蚀刻和图案化低掺杂的第一导电半导体层，以暴露部分低掺杂的第一导电半导体层，从而形成大量的沟槽; 去除残留在低掺杂的第一导电半导体层上的铝层; 在具有大量凹槽的低掺杂第一导电半导体层上顺序地形成高掺杂的第一导电半导体层，有源层和第二导电半导体层; 在所述第二导电半导体层上形成金属反射层和导电基板; 分离牺牲衬底; 以及在所述低掺杂的第一导电半导体层的另一个表面上形成电极焊盘，所述电极焊盘填充在与所述高掺杂的第一导电半导体层欧姆接触的大量所述沟槽中。

4. 发明申请

US20110003407A1 LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20110003407A1
公开(公告)日：2011-01-06
申请号：US12882449
申请日：2010-09-15
申请人： Chang Yeon Kim , Yeo Jin Yoon
发明人： Chang Yeon Kim , Yeo Jin Yoon
IPC分类号： H01L33/00
CPC分类号： H01L33/24 , H01L33/14
摘要： There are provided a light emitting device and a method of manufacturing the same. A light emitting device according to the present invention includes a substrate; an N-type semiconductor layer, an active layer and a P-type semiconductor layer, sequentially formed on the substrate; one or more trenches formed to expose the N-type semiconductor layer by partially removing at least the P-type semiconductor and active layers; a first insulating layer formed on sidewalls of the trenches; and a conductive layer filled in the trenches having the first insulating layer formed therein. According to the present invention, it is possible to obtain a characteristic of uniform current diffusion, and thus, light is uniformly emitted to thereby enhance the light emitting efficiency.
摘要翻译：提供了一种发光器件及其制造方法。根据本发明的发光器件包括：衬底; 依次形成在基板上的N型半导体层，有源层和P型半导体层; 通过部分去除至少P型半导体和有源层而形成一个或多个沟槽以暴露N型半导体层; 形成在所述沟槽的侧壁上的第一绝缘层; 以及填充在其中形成有第一绝缘层的沟槽中的导电层。根据本发明，可以获得均匀的电流扩散的特性，从而均匀地发光，从而提高发光效率。

5. 发明申请

US20100012969A1 LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20100012969A1
公开(公告)日：2010-01-21
申请号：US12518846
申请日：2007-12-12
申请人： Yeo Jin Yoon , Chang Yeon Kim
发明人： Yeo Jin Yoon , Chang Yeon Kim
IPC分类号： H01L33/00 , H01L21/302 , H01L21/28
CPC分类号： H01L33/60 , H01L21/28 , H01L21/306 , H01L33/0079 , H01L33/22
摘要： There is provided a method of fabricating a vertical light emitting diode. The method comprises the steps of: growing a low doped first conductive semiconductor layer on a sacrificial substrate; forming an aluminum layer on the low doped first conductive semiconductor layer; forming an AAO layer having a large number of holes formed therein by performing anodizing treatment of the aluminum layer; etching and patterning the low doped first conductive semiconductor layer using the aluminum layer with a large number of the holes as a shadow mask to expose a portion of the low doped first conductive semiconductor layer, thereby forming a large number of grooves; removing the aluminum layer remaining on the low doped first conductive semiconductor layer; sequentially forming a high doped first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on the low doped first conductive semiconductor layer with a large number of the grooves; forming a metal reflective layer and a conductive substrate on the second conductive semiconductor layer; separating the sacrificial substrate; and forming an electrode pad on the other surface of the low doped first conductive semiconductor layer, the electrode pad being filled in a large number of the grooves to be in ohmic contact with the high doped first conductive semiconductor layer
摘要翻译：提供了制造垂直发光二极管的方法。该方法包括以下步骤：在牺牲衬底上生长低掺杂的第一导电半导体层; 在所述低掺杂的第一导电半导体层上形成铝层; 通过对铝层进行阳极氧化处理，形成其中形成有大量孔的AAO层; 使用具有大量孔的铝层作为荫罩来蚀刻和图案化低掺杂的第一导电半导体层，以暴露部分低掺杂的第一导电半导体层，从而形成大量的沟槽; 去除残留在低掺杂的第一导电半导体层上的铝层; 在具有大量凹槽的低掺杂第一导电半导体层上顺序地形成高掺杂的第一导电半导体层，有源层和第二导电半导体层; 在所述第二导电半导体层上形成金属反射层和导电基板; 分离牺牲衬底; 以及在所述低掺杂的第一导电半导体层的另一个表面上形成电极焊盘，所述电极焊盘填充在所述多个沟槽中以与所述高掺杂的第一导电半导体层欧姆接触

6. 发明授权

US08247244B2 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08247244B2
公开(公告)日：2012-08-21
申请号：US12882449
申请日：2010-09-15
申请人： Chang Yeon Kim , Yeo Jin Yoon
发明人： Chang Yeon Kim , Yeo Jin Yoon
IPC分类号： H01L21/00
CPC分类号： H01L33/24 , H01L33/14
摘要： There are provided a light emitting device and a method of manufacturing the same. A light emitting device according to the present invention includes a substrate; an N-type semiconductor layer, an active layer and a P-type semiconductor layer, sequentially formed on the substrate; one or more trenches formed to expose the N-type semiconductor layer by partially removing at least the P-type semiconductor and active layers; a first insulating layer formed on sidewalls of the trenches; and a conductive layer filled in the trenches having the first insulating layer formed therein. According to the present invention, it is possible to obtain a characteristic of uniform current diffusion, and thus, light is uniformly emitted to thereby enhance the light emitting efficiency.
摘要翻译：提供了一种发光器件及其制造方法。根据本发明的发光器件包括：衬底; 依次形成在基板上的N型半导体层，有源层和P型半导体层; 通过部分去除至少P型半导体和有源层而形成一个或多个沟槽以暴露N型半导体层; 形成在所述沟槽的侧壁上的第一绝缘层; 以及填充在其中形成有第一绝缘层的沟槽中的导电层。根据本发明，可以获得均匀的电流扩散的特性，从而均匀地发光，从而提高发光效率。

7. 发明申请

US20090315063A1 LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20090315063A1
公开(公告)日：2009-12-24
申请号：US12251735
申请日：2008-10-15
申请人： Chang Yeon Kim , Yeo Jin Yoon
发明人： Chang Yeon Kim , Yeo Jin Yoon
IPC分类号： H01L33/00
CPC分类号： H01L33/24 , H01L33/14
摘要： There are provided a light emitting device and a method of manufacturing the same. A light emitting device according to the present invention includes a substrate; an N-type semiconductor layer, an active layer and a P-type semiconductor layer, sequentially formed on the substrate; one or more trenches formed to expose the N-type semiconductor layer by partially removing at least the P-type semiconductor and active layers; a first insulating layer formed on sidewalls of the trenches; and a conductive layer filled in the trenches having the first insulating layer formed therein. According to the present invention, it is possible to obtain a characteristic of uniform current diffusion, and thus, light is uniformly emitted to thereby enhance the light emitting efficiency.
摘要翻译：提供了一种发光器件及其制造方法。根据本发明的发光器件包括：衬底; 依次形成在基板上的N型半导体层，有源层和P型半导体层; 通过部分去除至少P型半导体和有源层而形成一个或多个沟槽以暴露N型半导体层; 形成在所述沟槽的侧壁上的第一绝缘层; 以及填充在其中形成有第一绝缘层的沟槽中的导电层。根据本发明，可以获得均匀的电流扩散的特性，从而均匀地发光，从而提高发光效率。

8. 发明申请

US20100136722A1 ORGANIC ELECTRO LUMINESCENCE DEVICE AND FABRICATION METHOD THEREOF 有权
标题翻译：有机电致发光器件及其制造方法
公开(公告)号：US20100136722A1
公开(公告)日：2010-06-03
申请号：US12414163
申请日：2009-03-30
申请人： Chang Yeon Kim , Tae Joon Ahn
发明人： Chang Yeon Kim , Tae Joon Ahn
IPC分类号： H01L51/56
CPC分类号： H01L27/3253 , H01L27/3246 , H01L51/56
摘要： An organic electro luminescence device and a fabrication method thereof are provided. An array element is formed on a first substrate and an electro luminescent diode is formed on a second substrate. The array element and the electro luminescent diode are electrically connected together by a spacer. A separator divides a sub pixel into a first region and a second region. In the electro luminescent diode, an anode electrode is formed over the first and second regions. An organic electro luminescent layer and a cathode electrode are formed on the anode electrode of one of the first and second regions.
摘要翻译：提供一种有机电致发光器件及其制造方法。在第一基板上形成阵列元件，在第二基板上形成电致发光二极管。阵列元件和电致发光二极管通过间隔物电连接在一起。分离器将子像素划分为第一区域和第二区域。在电致发光二极管中，在第一和第二区域上形成阳极电极。在第一和第二区域之一的阳极上形成有机电致发光层和阴极电极。

9. 发明授权

US07106281B2 Apparatus and method for driving electro-luminescence panel 有权
公开(公告)号：US07106281B2
公开(公告)日：2006-09-12
申请号：US10178502
申请日：2002-06-25
申请人： Chang Yeon Kim , Han Sang Lee , Myoung Ho Lee
发明人： Chang Yeon Kim , Han Sang Lee , Myoung Ho Lee
IPC分类号： G09G3/30
CPC分类号： G09G3/3241 , G09G3/3283 , G09G2300/0842 , G09G2310/0251
摘要： An apparatus and method for driving an electro-luminescence panel wherein pixels in a current driving type electrode-luminescence panel are pre-charged to change a storage voltage of the pixel into the corresponding voltage within a limited scanning time. In the apparatus, a plurality of electro-luminescence cells are arranged at crossings between gate lines and data lines. A gate driver is connected to the gate lines to sequentially drive the gate lines. A data driver is connected to the data lines to apply pixel signals, via the data lines, to the electro-luminescence cells. A pre-charger is provided within the data driver to pre-charge a current into the data lines before the pixel signals are applied via the data lines.

10. 发明授权

US06697140B2 In-plane switching mode liquid crystal display device wherein portions of second gate line overlaps with data electrode 有权
标题翻译：面内切换模式液晶显示装置，其中第二栅极线的部分与数据电极重叠
公开(公告)号：US06697140B2
公开(公告)日：2004-02-24
申请号：US09781196
申请日：2001-02-13
申请人： Seong Moh Seo , Hyun Ho Shin , Young Jin Oh , Hyun Chang Lee , Chang Yeon Kim
发明人： Seong Moh Seo , Hyun Ho Shin , Young Jin Oh , Hyun Chang Lee , Chang Yeon Kim
IPC分类号： G02F11343
CPC分类号： G02F1/13458 , G02F1/134363 , G02F1/13452 , G02F1/136213
摘要： An in-plane switching mode liquid crystal display device comprises first and second substrates, a plurality of gate and data bus lines defining pixel regions and arranged on the first substrate, a plurality of data electrodes on same plane of the data bus lines these some parts are overlapped with adjacent gate bus line, a passivation layer on the data electrodes, a plurality of common electrodes on the passivation layer these some parts are overlapped with adjacent data electrodes, and a liquid crystal layer between the first and second substrates.
摘要翻译：面内切换模式液晶显示装置包括第一和第二基板，多个限定像素区域的栅极和数据总线线路，并布置在第一基板上，多个数据电极在数据总线的同一平面上，这些部分与相邻栅极总线重叠，数据电极上的钝化层，钝化层上的多个公共电极，这些一些部分与相邻的数据电极重叠，以及在第一和第二基板之间的液晶层。

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