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    • 2. 发明申请
    • ABATEMENT APPARATUS AND PROCESSING METHOD
    • 减压装置和加工方法
    • WO2009087102A3
    • 2009-12-30
    • PCT/EP2009000075
    • 2009-01-09
    • P2I LTDCOULSON STEPHEN RICHARD
    • COULSON STEPHEN RICHARD
    • F26B5/04F26B25/22
    • F26B5/04F26B25/225
    • The present invention relates to a method of processing an article (16) to remove outgassing substances. The method comprises: placing an article in a closed processing region (12); reducing a pressure in the processing region so that the article (16) is exposed to a pressure to control a rate of outgassing from the article; and disposing outgases (15) released from the article. The present invention also relates to abatement apparatus (10) for processing an article (16) to remove outgassing substances. The apparatus comprises: a processing region (12); vacuum pumping means (20) for reducing a pressure in the processing region (12); control means (28) for controlling a rate of outgassing from the article (16); and disposal means (22) for disposing of outgases (15) released from the article.
    • 本发明涉及一种处理物品(16)以去除除气物质的方法。 该方法包括:将物品放置在封闭处理区域(12)中; 降低处理区域中的压力,使得制品(16)暴露于压力下以控制制品脱气的速率; 和处理从物品释放的外部气体(15)。 本发明还涉及用于处理物品(16)以去除除气物质的消减装置(10)。 该设备包括:处理区域(12);处理区域 真空泵装置(20),用于降低处理区域(12)中的压力; 控制装置(28),用于控制来自物品(16)的放气速率; 和用于处理从物品释放的排气(15)的处理装置(22)。
    • 3. 发明申请
    • ABATEMENT APPARATUS AND PROCESSING METHOD
    • 拍卖设备和处理方法
    • WO2009087102A2
    • 2009-07-16
    • PCT/EP2009/000075
    • 2009-01-09
    • P2I LIMITEDCOULSON, Stephen, Richard
    • COULSON, Stephen, Richard
    • F26B5/04F26B25/225
    • The present invention relates to a method of processing an article (16) to remove outgassing substances. The method comprises: placing an article in a closed processing region (12); reducing a pressure in the processing region so that the article (16) is exposed to a pressure to control a rate of outgassing from the article; and disposing outgases (15) released from the article. The present invention also relates to abatement apparatus (10) for processing an article (16) to remove outgassing substances. The apparatus comprises: a processing region (12); vacuum pumping means (20) for reducing a pressure in the processing region (12); control means (28) for controlling a rate of outgassing from the article (16); and disposal means (22) for disposing of outgases (15) released from the article.
    • 本发明涉及一种处理物品(16)以除去除气物质的方法。 该方法包括:将物品放置在封闭的处理区域(12)中; 降低处理区域中的压力,使得物品(16)暴露于压力以控制来自制品的放气率; 并且处理从物品释放出的废物(15)。 本发明还涉及用于处理物品(16)以除去除气物质的消减装置(10)。 该装置包括:处理区域(12); 用于减小处理区域(12)中的压力的​​真空泵送装置(20); 控制装置(28),用于控制从制品(16)排气的速率; 以及用于处理从制品释放的废气(15)的处置装置(22)。
    • 6. 发明申请
    • PLASMA DEPOSITION APPARATUS
    • 等离子体沉积装置
    • WO2009010753A3
    • 2009-06-11
    • PCT/GB2008002440
    • 2008-07-17
    • P2I LTDCOULSON STEPHEN RICHARDKING CHARLES EDMUND
    • COULSON STEPHEN RICHARDKING CHARLES EDMUND
    • B05D7/24C23C14/28
    • H01J37/32449B05D1/62C23C16/4412C23C16/507C23C16/54Y10T428/31504
    • Apparatus (10) for coating a surface of an article (14) with a thin film polymer layer by plasma deposition, the apparatus comprising: a plurality of processing chambers (12a, 12b, 12c....12n) into each of which one or more articles can be placed; means (18, 19, 20, 21, 22) for supplying an active species to said processing chambers for forming a plasma in said chambers; a plurality of induction means (24) associated with respective processing chambers, each induction means being operable to induce an electrical field internally of an associated processing chamber for forming a plasma when said active species is supplied thereto so that a surface of said article can be coated with a thin film polymer layer by plasma deposition; means (26) for providing a time varying electric current in the induction means; and pressure control means (28) for selectively controlling pressure in said processing chambers such that pressure in any one or more of said chambers can be controlled independently of pressure in other of said chambers.
    • 用于通过等离子体沉积用薄膜聚合物层涂覆制品(14)的表面的设备(10),所述设备包括:多个处理室(12a,12b,12c ... 12n),每个处理室 或者可以放置更多的物品; 用于向所述处理室提供活性物质以在所述室中形成等离子体的装置(18,19,20,21,22) 与相应的处理室相关联的多个感应装置(24),每个感应装置可操作以在相关联的处理室内引起电场,用于在向所述活性物质供应所述活性物质时形成等离子体,使得所述物品的表面可以是 通过等离子体沉积涂覆有薄膜聚合物层; 用于在所述感应装置中提供时变电流的装置(26) 和压力控制装置(28),用于选择性地控制所述处理室中的压力,使得任何一个或多个所述室中的压力可以独立于所述室中的另一个室中的压力进行控制。
    • 7. 发明申请
    • PLASMA DEPOSITION APPARATUS
    • 等离子体沉积装置
    • WO2009060194A2
    • 2009-05-14
    • PCT/GB2008003739
    • 2008-11-07
    • P2I LTDCOULSON STEPHEN RICHARD
    • COULSON STEPHEN RICHARD
    • C23C16/04C23C16/505
    • C23C16/045B05D1/62B05D7/22B29C2035/0855B29C2035/0861B29L2031/7542B29L2031/7544C23C16/505
    • Apparatus (10) is shown for plasma treating a surface of a small (channel 12) to modify the surface and change the functional effect. The apparatus comprises: a source (14) of active species for supply to an inlet (16) of a processing region (18) for forming a plasma in the processing region; means (20) for applying an electric field to the active species in the processing region so that a plasma is formed; and vacuum pumping means (22) for connection to an outlet (24) of the processing region. The vacuum pumping means are operable to provide a flow path (26) in the processing region from the inlet to the outlet thereof and to control pressure in the processing region. Apparatus (10) further comprises supporting means for supporting at least one small channel so that, in use, the flow path extends therethrough, and an internal surface of said at least one small channel is coated with a thin film polymer layer by plasma deposition.
    • 示出了用于等离子体处理小(通道12)的表面以修改表面并改变功能效果的装置(10)。 该设备包括:用于供应到处理区域(18)的入口(16)的活性物质源(14),用于在处理区域中形成等离子体; 用于向处理区域中的活性物质施加电场以形成等离子体的装置(20); 以及用于连接到处理区域的出口(24)的真空泵装置(22)。 真空泵送装置可操作以在处理区域中从入口到出口提供流路(26)并控制处理区域中的压力。 设备(10)还包括用于支撑至少一个小通道的支撑装置,使得在使用中流道延伸穿过其中,并且所述至少一个小通道的内表面通过等离子体沉积涂覆有薄膜聚合物层。