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    • 2. 发明申请
    • MAPPING DATA TO NON-VOLATILE MEMORY
    • 将数据映射到非易失性存储器
    • WO2012106255A1
    • 2012-08-09
    • PCT/US2012/023165
    • 2012-01-30
    • MARVELL WORLD TRADE LTD.CHILAPPAGARI, Shashi KiranYANG, XueshiBURD, Gregory
    • CHILAPPAGARI, Shashi KiranYANG, XueshiBURD, Gregory
    • G11C11/56G11C16/10G11C16/34
    • G06F12/0246G06F2212/7201G11C11/5621G11C16/10G11C16/34
    • The present disclosure includes systems and techniques relating to non-volatile memory. A described system, for example, includes a non-volatile memory structure that includes a plurality of multi- level memory cells. The described system includes a controller configured to map a data segment to the plurality of multi -level memory cells. A first portion of a first set of consecutive bits of a data segment (sector 1) is mapped to a first page (LSBpage) associated with the plurality of multi -level memory cells. A second portion of the first set of consecutive bits of the data segment (sectorl) is mapped to a second page (MSB page) associated with the plurality of multi -level memory cells. A first portion of a second set of consecutive bits of the data segment (sector2) is mapped to the first page. A second portion of the second set of consecutive bits of the data segment is mapped to the second page. The first page is associated with bits of a first significance (LSB), and the second page is associated with bits of a second significance (MSB).
    • 本公开包括与非易失性存储器有关的系统和技术。 所描述的系统例如包括包括多个多级存储器单元的非易失性存储器结构。 所描述的系统包括被配置为将数据段映射到多个多层存储器单元的控制器。 数据段(扇区1)的第一组连续位的第一部分被映射到与多个多层存储器单元相关联的第一页(LSB页)。 数据段(扇区1)的第一组连续位的第二部分被映射到与多个多层存储器单元相关联的第二页(MSB页)。 数据段(扇区2)的第二组连续位的第一部分被映射到第一页。 数据段的第二组连续位的第二部分被映射到第二页。 第一页与第一有效位(LSB)的位相关联,并且第二页与第二有效位(MSB)的位相关联。