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1. 发明申请

US20130046504A1 COMPUTING DEVICE, STORAGE MEDIUM, AND METHOD FOR TESTING INTEGRITY OF SIGNALS TRANSMITTED FROM HARD DISK INTERFACES 审中-公开
标题翻译：计算机设备，存储介质以及用于测试从硬盘介质传输的信号的完整性的方法
公开(公告)号：US20130046504A1
公开(公告)日：2013-02-21
申请号：US13483055
申请日：2012-05-30
申请人： HUI-CHI LO , HSIEN-CHUAN LIANG , JUI-HSIUNG HO , SHOU-KUO HSU , CHENG-CHUNG HUANG , CHENG-HSIEN LEE
发明人： HUI-CHI LO , HSIEN-CHUAN LIANG , JUI-HSIUNG HO , SHOU-KUO HSU , CHENG-CHUNG HUANG , CHENG-HSIEN LEE
IPC分类号： G06F19/00 , G01R31/28
CPC分类号： G11B5/455 , G06F11/2221 , G11B27/36 , G11B2220/2516
摘要： In a method for testing integrity of signals transmitted from hard disk interfaces using a computing device, the computing device connects to an oscilloscope and a mechanical arm that is equipped with a test fixture. The mechanical arm controls the test fixture to make contact with one of the hard disk interfaces to be tested. The method adjusts an intensity grade of the signals through the hard disk interface, and controls the hard disk interface to produce a signal corresponding to the adjusted intensity grade. The test fixture obtains the signal from the hard disk interface, and the oscilloscope measures one or more test parameters of the signal. The method analyzes values of the test parameters to find an optimal signal, determines an intensity grade of the optimal signal as a driving parameter of the hard disk interface, and generates a test report of the hard disk interfaces.
摘要翻译：在用于测试使用计算设备从硬盘接口传输的信号的完整性的方法中，计算设备连接到配备有测试夹具的示波器和机械臂。机械臂控制测试夹具与待测试的硬盘接口之间的接触。该方法通过硬盘接口调整信号的强度等级，并控制硬盘接口产生对应于调整强度等级的信号。测试夹具从硬盘接口获取信号，示波器测量信号的一个或多个测试参数。该方法分析测试参数的值，找到最佳信号，确定最佳信号的强度等级作为硬盘接口的驱动参数，并生成硬盘接口的测试报告。

2. 发明申请

US20110012671A1 Charge Pump Circuit 失效
标题翻译：电荷泵电路
公开(公告)号：US20110012671A1
公开(公告)日：2011-01-20
申请号：US12766911
申请日：2010-04-25
申请人： Chen-Jung Chuang , Shih-Pin Hsu , Cheng-Chung Huang , Wen-Ping Chou
发明人： Chen-Jung Chuang , Shih-Pin Hsu , Cheng-Chung Huang , Wen-Ping Chou
IPC分类号： G05F3/02
CPC分类号： H02M3/07
摘要： A charge pump circuit includes an input end, a first reservoir capacitor, a second reservoir capacitor, a first output end, a second output end, and a charge pump unit. The input end is utilized for receiving an input voltage. The charge pump unit includes a first flying capacitor, a second capacitor, a plurality of switches, and a control unit. The control unit is utilized for controlling on/off state of the plurality of switches so that the first flying capacitor provides a positive charge pump voltage to the first output end or a negative charge pump voltage to the second output and the second flying capacitor provides a positive charge pump voltage to the first output end through charge and discharge process.
摘要翻译：电荷泵电路包括输入端，第一储存电容器，第二储存电容器，第一输出端，第二输出端和电荷泵单元。输入端用于接收输入电压。电荷泵单元包括第一飞行电容器，第二电容器，多个开关和控制单元。控制单元用于控制多个开关的接通/断开状态，使得第一飞行电容器向第一输出端提供正电荷泵电压或向第二输出端提供负电荷泵电压，并且第二飞行电容器提供一正电荷泵电压通过充放电过程到第一输出端。

3. 发明授权

US07300837B2 FinFET transistor device on SOI and method of fabrication 有权
标题翻译： SOI上的FinFET晶体管器件及其制造方法
公开(公告)号：US07300837B2
公开(公告)日：2007-11-27
申请号：US10836295
申请日：2004-04-30
申请人： Hau-Yu Chen , Chang-Yun Chang , Cheng-Chung Huang , Fu-Liang Yang
发明人： Hau-Yu Chen , Chang-Yun Chang , Cheng-Chung Huang , Fu-Liang Yang
IPC分类号： H01L21/8238
CPC分类号： H01L29/785 , H01L29/66628 , H01L29/66795 , H01L29/7854
摘要： A FinFET transistor on SOI device and method of fabrication is provided. At least two FinFET fins each having an upper poly-silicate glass portion and a lower silicon portion are formed using spacer patterning technology. Each fin is formed on a sacrificial SiN mask layer having a sacrificial support structure. The SiN mask is removed and then a breakthrough etch is applied to remove an underlying pad oxide layer. A PSG layer defining a width of each of the fins on a sidewall of each of the support structures is deposited on each of the support structures. At least two fins each having a narrow fin pitch of about 0.25 μm. are formed. The fins provide a seed layer for at least two selective epitaxially raised source and drain regions, wherein each raised source-drain associated with each fin are interconnected thus forming a source pad and a drain pad.
摘要翻译：提供了SOI器件上的FinFET晶体管及其制造方法。使用间隔物图案化技术形成至少两个FinFET翅片，每个鳍状物具有上部多晶硅玻璃部分和下部硅部分。每个翅片形成在具有牺牲支撑结构的牺牲SiN掩模层上。去除SiN掩模，然后施加穿透蚀刻以去除下面的衬垫氧化物层。限定每个支撑结构的侧壁上的每个翅片的宽度的PSG层沉积在每个支撑结构上。至少两个翅片各自具有约0.25μm的窄翅片间距。形成。翅片提供用于至少两个选择性外延凸起的源极和漏极区域的种子层，其中与每个鳍片相关联的每个凸起的源极 - 漏极互连，从而形成源极焊盘和漏极焊盘。

4. 发明申请

US20050242395A1 FinFET transistor device on SOI and method of fabrication 有权
标题翻译： SOI上的FinFET晶体管器件及其制造方法
公开(公告)号：US20050242395A1
公开(公告)日：2005-11-03
申请号：US10836295
申请日：2004-04-30
申请人： Hau-Yu Chen , Chang-Yun Chang , Cheng-Chung Huang , Fu-Liang Yang
发明人： Hau-Yu Chen , Chang-Yun Chang , Cheng-Chung Huang , Fu-Liang Yang
IPC分类号： H01L21/336 , H01L29/78 , H01L29/786
CPC分类号： H01L29/785 , H01L29/66628 , H01L29/66795 , H01L29/7854
摘要： A FinFET transistor on SOI device and method of fabrication is provided. At least two FinFET fins each having an upper poly-silicate glass portion and a lower silicon portion are formed using spacer patterning technology. Each fin is formed on a sacrificial SiN mask layer having a sacrificial support structure. The SiN mask is removed and then a breakthrough etch is applied to remove an underlying pad oxide layer. A PSG layer defining a width of each of the fins on a sidewall of each of the support structures is deposited on each of the support structures. At least two fins each having a narrow fin pitch of about 0.25 μm. are formed. The fins provide a seed layer for at least two selective epitaxially raised source and drain regions, wherein each raised source-drain associated with each fin are interconnected thus forming a source pad and a drain pad.
摘要翻译：提供了SOI器件上的FinFET晶体管及其制造方法。使用间隔物图案化技术形成至少两个FinFET翅片，每个鳍状物具有上部多晶硅玻璃部分和下部硅部分。每个翅片形成在具有牺牲支撑结构的牺牲SiN掩模层上。去除SiN掩模，然后施加穿透蚀刻以去除下面的衬垫氧化物层。限定每个支撑结构的侧壁上的每个翅片的宽度的PSG层沉积在每个支撑结构上。至少两个翅片各自具有约0.25μm的窄翅片间距。形成。翅片提供用于至少两个选择性外延凸起的源极和漏极区域的种子层，其中与每个鳍片相关联的每个凸起的源极 - 漏极互连，从而形成源极焊盘和漏极焊盘。

5. 发明授权

US06898341B2 Optical system for calibration and control of an optical fiber switch 失效
标题翻译：用于光纤开关校准和控制的光学系统
公开(公告)号：US06898341B2
公开(公告)日：2005-05-24
申请号：US09999610
申请日：2001-10-24
申请人： Cheng-Chung Huang , Steven Saeed Nasiri , Randall Brian Sprague , Alex Harwit , Dmitry Vasily Bakin , Janusz Bryzek
发明人： Cheng-Chung Huang , Steven Saeed Nasiri , Randall Brian Sprague , Alex Harwit , Dmitry Vasily Bakin , Janusz Bryzek
IPC分类号： G02B6/42 , G02B6/35 , G02B26/08 , H04Q3/52 , H04Q11/00 , G02B6/26
CPC分类号： H04Q11/0005 , G02B6/3546 , G02B6/3556 , G02B6/3586 , H04Q2011/0026 , H04Q2011/003 , H04Q2011/0037 , H04Q2011/0039 , H04Q2011/0049 , H04Q2011/0083
摘要： Methods of calibrating and operating optical switches as well as optical switches in which the orientations of mirrors are measured and controlled using control light beams and position sensing detectors are described. The present invention may provide high resolution control of a plurality of mirrors in an optical switch and thus allow the optical switch to cross-connect a large number of input and output ports with a low insertion loss.
摘要翻译：描述了使用控制光束和位置感测检测器来测量和控制光学开关以及光学开关的校准和操作的方法。本发明可以提供光开关中的多个反射镜的高分辨率控制，从而允许光开关以低插入损耗交叉连接大量输入和输出端口。

6. 发明授权

US5938885A Automated method for monitoring and controlling the orthophosphoric acid etch rate of silicon nitride insulator layers 失效
标题翻译：用于监测和控制氮化硅绝缘体层的正磷酸蚀刻速率的自动化方法
公开(公告)号：US5938885A
公开(公告)日：1999-08-17
申请号：US22406
申请日：1998-02-12
申请人： Cheng-Chung Huang , Shu Mei Chen
发明人： Cheng-Chung Huang , Shu Mei Chen
IPC分类号： H01L21/311 , C23F1/02
CPC分类号： H01L21/31111
摘要： A method for continuously monitoring and controlling the etch rates within integrated circuits of silicon nitride insulator layers and silicon nitride insulator structures in aqueous ortho-phosphoric acid (H3PO4) solutions. To practice the method of the present invention, there is first provided an etch bath chamber containing therein an aqueous ortho-phosphoric acid (H3PO4) solution. There is provided continuously from the etch bath chamber to a hydrometer cell a sample stream of the aqueous ortho-phosphoric acid (H3PO4) solution. The sample stream of the aqueous ortho-phosphoric acid (H3PO4) solution is analyzed continuously within the hydrometer cell to provide a continuous specific gravity analysis of the sample stream of the aqueous ortho-phosphoric acid (H3PO4) solution. Finally, the continuous specific gravity analysis of the sample stream of the aqueous ortho-phosphoric acid (H3PO4) solution is employed to add intermittently to the aqueous ortho-phosphoric acid (H3PO4) solution a quantity of water sufficient to maintain a first water content of the aqueous ortho-phosphoric acid (H3PO4) solution within the etch bath chamber at a value greater than about 5 weight percent. Optionally, the continuous specific gravity analysis of the sample stream of the aqueous ortho-phosphoric acid (H3PO4) solution may also be simultaneously employed to add intermittently to the aqueous ortho-phosphoric acid (H3PO4) solution a quantity of heat sufficient to maintain a second water content of the aqueous ortho-phosphoric acid (H3PO4) solution within the etch bath at a value less than about 20 weight percent. The present invention also discloses the hydrometer cell and an automated etch bath chamber which are employed in practicing the method of the present invention.
摘要翻译：一种用于在正磷酸（H 3 PO 4）水溶液中连续监测和控制氮化硅绝缘体层和氮化硅绝缘体结构的集成电路内的蚀刻速率的方法。为了实施本发明的方法，首先提供了含有正磷酸（H 3 PO 4）水溶液的蚀刻浴室。从蚀刻槽室向比重计单元连续提供原磷酸水溶液（H 3 PO 4）溶液的样品流。在比重计单元内连续分析正磷酸水溶液（H 3 PO 4）溶液的样品流，以对原磷酸（H 3 PO 4）水溶液的样品流进行连续比重分析。最后，使用邻磷酸（H 3 PO 4）水溶液的样品流的连续比重分析，向邻磷酸（H 3 PO 4）水溶液间歇地添加一定量的足以维持第一含水量的水蚀刻浴室内的正磷酸（H 3 PO 4）水溶液，其值大于约5重量％。任选地，也可以同时使用邻磷酸（H 3 PO 4）水溶液的样品流的连续比重分析来向正磷酸（H 3 PO 4）水溶液间歇地添加一定量的足以维持第二在蚀刻槽内的正磷酸（H 3 PO 4）水溶液的含水量小于约20重量％。本发明还公开了在实施本发明的方法中使用的比重计单元和自动蚀刻浴腔。

7. 发明授权

US4848908A Optical heterodyne roughness measurement system 失效
标题翻译：光学外差粗糙度测量系统
公开(公告)号：US4848908A
公开(公告)日：1989-07-18
申请号：US544506
申请日：1983-10-24
申请人： Cheng-Chung Huang
发明人： Cheng-Chung Huang
IPC分类号： G01B11/30
CPC分类号： G01B11/303
摘要： Two optical beams of different frequencies are focussed as concentric spots, one spot being larger than the other, on a reflective surface whose roughness is to be measured. The smaller spot has a maximum dimension that is smaller than any significant deviation of the profile of the surface from spatial uniformity, and the larger spot has a minimum dimension that is larger than any significant deviation of the surface profile from spatial uniformity. The two beams are reflected from the surface along a common path with a phase difference that is measured by a heterodyne interferometric technique. The phase difference measurement is indicative of the roughness of the surface, and is substantially insensitive to vibration of the surface.
摘要翻译：不同频率的两个光束在要测量其粗糙度的反射表面上聚焦为同心点，一个点大于另一个点。较小的点具有小于表面轮廓与空间均匀性的任何显着偏差的最大尺寸，并且较大点具有大于表面轮廓与空间均匀性的任何显着偏差的最小尺寸。两条光束沿着共同路径从表面反射，其中相位差通过外差干涉技术测量。相位差测量表示表面的粗糙度，并且对表面的振动基本上不敏感。

8. 发明授权

US4504147A Angular alignment sensor 失效
标题翻译：角度校准传感器
公开(公告)号：US4504147A
公开(公告)日：1985-03-12
申请号：US287676
申请日：1981-07-28
申请人： Cheng-Chung Huang
发明人： Cheng-Chung Huang
IPC分类号： G01B11/26 , G01J9/02 , G01B9/02
CPC分类号： G01J9/0215 , G01B11/26
摘要： A sensor for measuring angular deviations of a radiation beam relative to a reference plane. The sensor comprises a shearing interferometer block formed of a beamsplitter cube having a first reflecting device on one face of the cube for forming a first exit beam and a second reflecting device on the opposite face of the cube for forming a second exit beam. The first device can be a corner cube or a flat block mirror. The second device can be a right angle prism for one dimensional measurements and a 90.degree. pyramid prism for two-dimensional measurements. A photo-detector unit is adjacent to and spaced from the beam splitter cube and has a number of detector members across the path of travel of the wavefronts of the exit beams. The detector members provide output signals which can be used to calculate the angular deviation of the incoming beam from a normal to the reference plane. The optical path difference between the two arms of the interferometer block are equal substantially to odd multiples of one-fourth the wavelength of the incoming radiation. The sensor is accurate to better than 0.001 arc seconds of angular measurements for a photodetector unit whose maximum transverse dimension is 2.5 cm.
摘要翻译：用于测量辐射束相对于参考平面的角度偏差的传感器。传感器包括由分束器立方体形成的剪切干涉仪块，该分束器立方体在立方体的一个面上具有用于形成第一出射光束的第一反射装置，以及用于形成第二出射光束的立方体的相对面上的第二反射装置。第一个装置可以是角立方体或平面块镜。第二装置可以是用于一维测量的直角棱镜和用于二维测量的90°棱锥棱镜。光检测器单元与分束器立方体相邻并间隔开，并且在出射光束的波前的行进路径上具有多个检测器构件。检测器构件提供可用于计算入射光束与基准平面的角度偏差的输出信号。干涉仪块的两个臂之间的光程差基本上等于入射辐射波长四分之一的奇数倍。对于最大横向尺寸为2.5厘米的光电检测器单元，该传感器的精度要好于0.001弧秒的角度测量。

9. 发明授权

US4466738A Vibration sensor 失效
标题翻译：振动传感器
公开(公告)号：US4466738A
公开(公告)日：1984-08-21
申请号：US410515
申请日：1982-08-23
申请人： Cheng-Chung Huang , Tao Chang
发明人： Cheng-Chung Huang , Tao Chang
IPC分类号： G01B11/24 , G01D5/26 , G01B9/02
CPC分类号： G01D5/26 , G01B11/24
摘要： The disclosed heterodyne measurement apparatus utilizes a single coherent light source to simultaneously measure the location of a number of points on a surface. The coherent light is split into two parts by a Bragg Cell. One part, after being spatially split into a plurality of beams by a second Bragg Cell, fed to a plurality of reflectors on the surface, and recombined by the second Bragg Cell, is heterodyned with the second part. The heterodyned signal is fed to a photodetector and further processed to produce a signal representative to the distance to the points of interest on the surface.
摘要翻译：所公开的外差测量装置利用单个相干光源来同时测量表面上的多个点的位置。相干光被布拉格细胞分成两部分。一部分在被第二布拉格电池空间分割成多个光束之后，被馈送到表面上的多个反射器并由第二布拉格电池重新组合，与第二部分进行外差。外差信号被馈送到光电检测器并进一步处理以产生表示到表面上的感兴趣点的距离的信号。

10. 发明申请

US20230026831A1 CLEANING SACHET FOR REMOVING CARBON DEPOSIT AND RUST ON GUN, AND CLEANING METHOD THEREOF 有权
公开(公告)号：US20230026831A1
公开(公告)日：2023-01-26
申请号：US17858963
申请日：2022-07-06
申请人： CHENG-CHUNG HUANG
发明人： CHENG-CHUNG HUANG
IPC分类号： C01F7/02 , F41A29/00 , C01G9/02
摘要： A cleaning sachet for removing carbon deposit and rust on a gun element, and a cleaning method thereof, uses cleaning powder that includes aluminum oxide making up 75.000% to 99.989% by weight of the cleaning powder, zinc peroxide making up 0.010% to 9.000% by weight of the cleaning powder, and nano zinc oxide making up 0.001% to 6.000% by weight of the cleaning powder. A user can lay the cleaning sachet on a carbon-deposited and/or rusting area of the gun element before or after moistening the cleaning sachet with a lubricating oil, and then wipe the carbon-deposited and/or rusting area with the cleaning sachet after waiting a period of time. Therefore, the colloidal solution formed by mixing the lubricating oil and the cleaning powder and released out of the cleaning sachet can remove the carbon deposit and/or rust on the surface of the gun element.

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