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1. 发明授权

US07300837B2 FinFET transistor device on SOI and method of fabrication 有权
标题翻译： SOI上的FinFET晶体管器件及其制造方法
公开(公告)号：US07300837B2
公开(公告)日：2007-11-27
申请号：US10836295
申请日：2004-04-30
申请人： Hau-Yu Chen , Chang-Yun Chang , Cheng-Chung Huang , Fu-Liang Yang
发明人： Hau-Yu Chen , Chang-Yun Chang , Cheng-Chung Huang , Fu-Liang Yang
IPC分类号： H01L21/8238
CPC分类号： H01L29/785 , H01L29/66628 , H01L29/66795 , H01L29/7854
摘要： A FinFET transistor on SOI device and method of fabrication is provided. At least two FinFET fins each having an upper poly-silicate glass portion and a lower silicon portion are formed using spacer patterning technology. Each fin is formed on a sacrificial SiN mask layer having a sacrificial support structure. The SiN mask is removed and then a breakthrough etch is applied to remove an underlying pad oxide layer. A PSG layer defining a width of each of the fins on a sidewall of each of the support structures is deposited on each of the support structures. At least two fins each having a narrow fin pitch of about 0.25 μm. are formed. The fins provide a seed layer for at least two selective epitaxially raised source and drain regions, wherein each raised source-drain associated with each fin are interconnected thus forming a source pad and a drain pad.
摘要翻译：提供了SOI器件上的FinFET晶体管及其制造方法。使用间隔物图案化技术形成至少两个FinFET翅片，每个鳍状物具有上部多晶硅玻璃部分和下部硅部分。每个翅片形成在具有牺牲支撑结构的牺牲SiN掩模层上。去除SiN掩模，然后施加穿透蚀刻以去除下面的衬垫氧化物层。限定每个支撑结构的侧壁上的每个翅片的宽度的PSG层沉积在每个支撑结构上。至少两个翅片各自具有约0.25μm的窄翅片间距。形成。翅片提供用于至少两个选择性外延凸起的源极和漏极区域的种子层，其中与每个鳍片相关联的每个凸起的源极 - 漏极互连，从而形成源极焊盘和漏极焊盘。

2. 发明申请

US20050242395A1 FinFET transistor device on SOI and method of fabrication 有权
标题翻译： SOI上的FinFET晶体管器件及其制造方法
公开(公告)号：US20050242395A1
公开(公告)日：2005-11-03
申请号：US10836295
申请日：2004-04-30
申请人： Hau-Yu Chen , Chang-Yun Chang , Cheng-Chung Huang , Fu-Liang Yang
发明人： Hau-Yu Chen , Chang-Yun Chang , Cheng-Chung Huang , Fu-Liang Yang
IPC分类号： H01L21/336 , H01L29/78 , H01L29/786
CPC分类号： H01L29/785 , H01L29/66628 , H01L29/66795 , H01L29/7854
摘要： A FinFET transistor on SOI device and method of fabrication is provided. At least two FinFET fins each having an upper poly-silicate glass portion and a lower silicon portion are formed using spacer patterning technology. Each fin is formed on a sacrificial SiN mask layer having a sacrificial support structure. The SiN mask is removed and then a breakthrough etch is applied to remove an underlying pad oxide layer. A PSG layer defining a width of each of the fins on a sidewall of each of the support structures is deposited on each of the support structures. At least two fins each having a narrow fin pitch of about 0.25 μm. are formed. The fins provide a seed layer for at least two selective epitaxially raised source and drain regions, wherein each raised source-drain associated with each fin are interconnected thus forming a source pad and a drain pad.
摘要翻译：提供了SOI器件上的FinFET晶体管及其制造方法。使用间隔物图案化技术形成至少两个FinFET翅片，每个鳍状物具有上部多晶硅玻璃部分和下部硅部分。每个翅片形成在具有牺牲支撑结构的牺牲SiN掩模层上。去除SiN掩模，然后施加穿透蚀刻以去除下面的衬垫氧化物层。限定每个支撑结构的侧壁上的每个翅片的宽度的PSG层沉积在每个支撑结构上。至少两个翅片各自具有约0.25μm的窄翅片间距。形成。翅片提供用于至少两个选择性外延凸起的源极和漏极区域的种子层，其中与每个鳍片相关联的每个凸起的源极 - 漏极互连，从而形成源极焊盘和漏极焊盘。

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