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1. 发明申请

WO2008019377A3 METHOD OF SEPARATING SEMICONDUCTOR DIES 审中-公开
标题翻译：分离半导体器件的方法
公开(公告)号：WO2008019377A3
公开(公告)日：2008-06-05
申请号：PCT/US2007075402
申请日：2007-08-07
申请人： SEMI PHOTONICS CO LTD , CHU JIUNN-YI , CHENG CHAO-CHEN , CHU CHEN-FU , DOAN TRUNG TRI
发明人： CHU JIUNN-YI , CHENG CHAO-CHEN , CHU CHEN-FU , DOAN TRUNG TRI
IPC分类号： H01L21/30 , H01L21/50
CPC分类号： H01L21/78 , H01L33/0079 , H01L33/0095
摘要： A method for the separation of multiple dies during semiconductor fabrication is described. On an upper surface of a semiconductor wafer containing multiple dies, a seed metal layer may be used to grow hard metal layers above it for handling. Metal may be plated above these metal layers everywhere except where a block of stop electroplating (EP) material exists. The stop EP material may be obliterated, and a barrier layer may be formed above the entire remaining structure. The substrate may be removed, and the individual dies may have any desired bonding pads and/or patterned circuitry added to the semiconductor surface. The remerged hard metal after laser cutting and heating should be strong enough for handling. Tape may be added to the wafer, and a breaker may be used to break the dies apart. The resulting structure may be flipped over, and the tape may be expanded to separate the individual dies.
摘要翻译：描述了在半导体制造期间分离多个管芯的方法。在包含多个管芯的半导体晶片的上表面上，种子金属层可以用于在其上方生长硬金属层用于处理。除了存在一块停止电镀（EP）材料之外，金属可以被覆盖在这些金属层之上。停止EP材料可能被擦除，并且阻挡层可以形成在整个剩余结构之上。可以去除衬底，并且各个管芯可以具有添加到半导体表面的任何期望的接合焊盘和/或图案化电路。激光切割加热后的重金属硬度应足够强大。可以将胶带加入到晶片中，并且可以使用断路器将模具分开。可以将所得到的结构翻转，并且可以将带扩展以分离各个管芯。

2. 发明申请

WO2012171331A1 VERTICAL LED WITH CURRENT GUIDING STRUCTURE 审中-公开
标题翻译：具有电流导向结构的垂直LED
公开(公告)号：WO2012171331A1
公开(公告)日：2012-12-20
申请号：PCT/CN2012/000820
申请日：2012-06-14
申请人： SEMILEDS OPTOELECTRONICS CO.,LTD , LIU, Wen-Huang , CHU, Chen-Fu , CHU, Jiunn-Yi , CHENG, Chao-Chen , CHENG, Hao-Chun , FAN, Feng-Hsu , CHANG, Yuan-Hsiao
发明人： LIU, Wen-Huang , CHU, Chen-Fu , CHU, Jiunn-Yi , CHENG, Chao-Chen , CHENG, Hao-Chun , FAN, Feng-Hsu , CHANG, Yuan-Hsiao
IPC分类号： H01L27/15 , H01L29/00
CPC分类号： H01L33/38 , H01L27/15 , H01L33/385 , H01L33/40 , H01L33/44 , H01L2224/48091 , H01L2224/48465 , H01L2224/4903 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting diode (LED) comprises: a metal substrate(201); an LED stack for emitting light disposed above the metal substrate(201), wherein the LED stack provides a first current path for the LED; and a second current path(402) for the LED different from the first current path. The LED stack comprises a p-type semiconductor layer(110) and an n-type semiconductor layer(106) disposed above the p-type semiconductor layer(110). The LED may have the advantages of current guiding and transient suppression.
摘要翻译：发光二极管（LED）包括：金属基板（201）; 用于发射设置在所述金属基板（201）上方的光的LED堆叠，其中所述LED堆叠为所述LED提供第一电流路径; 以及用于不同于第一电流路径的LED的第二电流路径（402）。 LED堆叠包括p型半导体层（110）和设置在p型半导体层（110）上方的n型半导体层（106）。 LED可能具有电流引导和瞬态抑制的优点。

3. 发明申请

WO2008154526A4 METHOD TO MAKE LOW RESISTANCE CONTACT 审中-公开
标题翻译：低电阻接触的方法
公开(公告)号：WO2008154526A4
公开(公告)日：2010-04-15
申请号：PCT/US2008066378
申请日：2008-06-10
申请人： SEMI PHOTONICS CO LTD , CHU CHEN-FU , LIU WEN-HUANG , CHU JIUNN-YI , CHENG CHAO-CHEN , CHENG HAO-CHUN , FAN FENG-HSU , DOAN TRUNG TRI
发明人： CHU CHEN-FU , LIU WEN-HUANG , CHU JIUNN-YI , CHENG CHAO-CHEN , CHENG HAO-CHUN , FAN FENG-HSU , DOAN TRUNG TRI
IPC分类号： H01L23/48 , H01L33/00
CPC分类号： H01L33/0079
摘要： Techniques for fabricating contacts on inverted configuration surfaces of GaN layers of semiconductor devices are provided. An n-doped GaN layer may be formed with a surface exposed by removing a substrate on which the n-doped GaN layer was formed. The crystal structure of such a surface may have a significantly different configuration than the surface of an as-deposited p-doped GaN layer.
摘要翻译：提供了用于在半导体器件的GaN层的倒置配置表面上制造接触的技术。可以通过去除其上形成有n掺杂GaN层的衬底来暴露表面来形成n掺杂GaN层。这种表面的晶体结构可以具有与如此沉积的p掺杂GaN层的表面明显不同的配置。

4. 发明申请

WO2008045886A2 PROTECTION FOR THE EPITAXIAL STRUCTURE OF METAL DEVICES 审中-公开
标题翻译：金属器件外延结构的保护
公开(公告)号：WO2008045886A2
公开(公告)日：2008-04-17
申请号：PCT/US2007/080836
申请日：2007-10-09
申请人： SEMI-PHOTONICS CO., LTD. , FAN, Feng-Hsu , DOAN, Trung Tri , TRAN, Chuong Anh , CHU, Chen-Fu , CHENG, Chao-Chen , CHU, Jiunn-Yi , LIU, Wen-Huang , CHENG, Hao-Chun , YEN, Jui-Kang
发明人： FAN, Feng-Hsu , DOAN, Trung Tri , TRAN, Chuong Anh , CHU, Chen-Fu , CHENG, Chao-Chen , CHU, Jiunn-Yi , LIU, Wen-Huang , CHENG, Hao-Chun , YEN, Jui-Kang
IPC分类号： H01L29/06
CPC分类号： H01L33/0079 , H01L33/405 , H01L33/44 , H01L33/64
摘要： Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.
摘要翻译：提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。（或低）导电载体衬底。

5. 发明申请

WO2008019377A2 METHOD OF SEPARATING SEMICONDUCTOR DIES 审中-公开
标题翻译：分离半导体芯片的方法
公开(公告)号：WO2008019377A2
公开(公告)日：2008-02-14
申请号：PCT/US2007/075402
申请日：2007-08-07
申请人： SEMI-PHOTONICS CO., LTD. , CHU, Jiunn-Yi , CHENG, Chao-Chen , CHU, Chen-Fu , DOAN, Trung Tri
发明人： CHU, Jiunn-Yi , CHENG, Chao-Chen , CHU, Chen-Fu , DOAN, Trung Tri
IPC分类号： H01L21/78
CPC分类号： H01L21/78 , H01L33/0079 , H01L33/0095
摘要： A method for the separation of multiple dies during semiconductor fabrication is described. On an upper surface of a semiconductor wafer containing multiple dies, a seed metal layer may be used to grow hard metal layers above it for handling. Metal may be plated above these metal layers everywhere except where a block of stop electroplating (EP) material exists. The stop EP material may be obliterated, and a barrier layer may be formed above the entire remaining structure. The substrate may be removed, and the individual dies may have any desired bonding pads and/or patterned circuitry added to the semiconductor surface. The remerged hard metal after laser cutting and heating should be strong enough for handling. Tape may be added to the wafer, and a breaker may be used to break the dies apart. The resulting structure may be flipped over, and the tape may be expanded to separate the individual dies.
摘要翻译：描述了在半导体制造期间分离多个裸片的方法。在包含多个裸片的半导体晶片的上表面上，可使用种子金属层来在其上方生长用于处理的硬金属层。除了停止电镀（EP）材料块存在的地方以外，金属可以镀在这些金属层上方的任何地方。停止EP材料可以被消除，并且可以在整个剩余结构上方形成阻挡层。衬底可以被移除，并且各个管芯可以具有添加到半导体表面的任何期望的接合焊盘和/或图案化电路。激光切割和加热后的浸没硬金属应足够坚固以便处理。磁带可能被添加到晶片，并且可以使用断路器将模具分开。所得到的结构可以被翻转过来，并且磁带可以被扩展以分离各个裸片。

6. 发明申请

WO2008154526A2 METHOD TO MAKE LOW RESISTANCE CONTACT 审中-公开
标题翻译：制造低电阻接触的方法
公开(公告)号：WO2008154526A2
公开(公告)日：2008-12-18
申请号：PCT/US2008/066378
申请日：2008-06-10
申请人： SEMI-PHOTONICS CO., LTD. , CHU, Chen-Fu , LIU, Wen-Huang , CHU, Jiunn-Yi , CHENG, Chao-Chen , CHENG, Hao-Chun , FAN, Feng-Hsu , DOAN, Trung, Tri
发明人： CHU, Chen-Fu , LIU, Wen-Huang , CHU, Jiunn-Yi , CHENG, Chao-Chen , CHENG, Hao-Chun , FAN, Feng-Hsu , DOAN, Trung, Tri
IPC分类号： H01L21/00 , H01L31/00 , H01L33/00
CPC分类号： H01L33/0079
摘要： Techniques for fabricating contacts on inverted configuration surfaces of GaN layers of semiconductor devices are provided. An n-doped GaN layer may be formed with a surface exposed by removing a substrate on which the n-doped GaN layer was formed. The crystal structure of such a surface may have a significantly different configuration than the surface of an as-deposited p-doped GaN layer.
摘要翻译：提供了用于在半导体器件的GaN层的倒置配置表面上制造接触的技术。可以通过去除其上形成有n掺杂GaN层的衬底而暴露出表面的n掺杂GaN层。这种表面的晶体结构可以具有与沉积的p掺杂的GaN层的表面显着不同的构造。

7. 发明申请

WO2008154526A3 METHOD TO MAKE LOW RESISTANCE CONTACT 审中-公开
标题翻译：制造低电阻接触的方法
公开(公告)号：WO2008154526A3
公开(公告)日：2010-02-18
申请号：PCT/US2008066378
申请日：2008-06-10
申请人： SEMI PHOTONICS CO LTD , CHU CHEN-FU , LIU WEN-HUANG , CHU JIUNN-YI , CHENG CHAO-CHEN , CHENG HAO-CHUN , FAN FENG-HSU , DOAN TRUNG TRI
发明人： CHU CHEN-FU , LIU WEN-HUANG , CHU JIUNN-YI , CHENG CHAO-CHEN , CHENG HAO-CHUN , FAN FENG-HSU , DOAN TRUNG TRI
IPC分类号： H01L23/48 , H01L33/00
CPC分类号： H01L33/0079
摘要： Techniques for fabricating contacts on inverted configuration surfaces of GaN layers of semiconductor devices are provided. An n-doped GaN layer may be formed with a surface exposed by removing a substrate on which the n-doped GaN layer was formed. The crystal structure of such a surface may have a significantly different configuration than the surface of an as-deposited p-doped GaN layer.
摘要翻译：提供了用于在半导体器件的GaN层的倒置配置表面上制造接触的技术。可以通过去除其上形成有n掺杂GaN层的衬底而暴露出表面的n掺杂GaN层。这种表面的晶体结构可以具有与沉积的p掺杂的GaN层的表面显着不同的构造。

8. 发明申请

WO2008045887A1 DIE SEPARATION 审中-公开
标题翻译： DIE分离
公开(公告)号：WO2008045887A1
公开(公告)日：2008-04-17
申请号：PCT/US2007/080838
申请日：2007-10-09
申请人： SEMI-PHOTONICS CO., LTD. , CHU, Chen-fu , DOAN, Trung Tri , TRAN, Chuong Anh , CHENG, Chao-chen , CHU, Jiunn-yi , LIU, Wen-huang , CHENG, Hao-chun , FAN, Feng-hsu , YEN, Jui-kang
发明人： CHU, Chen-fu , DOAN, Trung Tri , TRAN, Chuong Anh , CHENG, Chao-chen , CHU, Jiunn-yi , LIU, Wen-huang , CHENG, Hao-chun , FAN, Feng-hsu , YEN, Jui-kang
IPC分类号： H01L21/78
CPC分类号： H01L33/0095 , B23K26/364 , B23K26/40 , B23K2201/40 , B23K2203/12 , B23K2203/14 , B23K2203/172 , B23K2203/50 , H01L21/78 , H01S5/0201 , H01S5/0202 , H01S5/32341
摘要： Techniques for dicing wafer assemblies containing multiple metal device dies, such as vertical light-emitting diode (VLED), power device, laser diode, and vertical cavity surface emitting laser device dies, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, such techniques are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.
摘要翻译：提供了用于切割包含多个金属器件管芯（例如垂直发光二极管（VLED）），功率器件，激光二极管和垂直腔表面发射激光器件管芯的晶片组件的技术。相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。此外，在具有原始非（或低）导热和/或非（或低）导电载体的金属器件的高散热率的情况下，这种技术可应用于GaN基电子器件已被去除的底物。

9. 发明申请

WO2008154573A1 VERTICAL LED WITH CURRENT GUIDING STRUCTURE 审中-公开
标题翻译：具有电流导向结构的垂直LED
公开(公告)号：WO2008154573A1
公开(公告)日：2008-12-18
申请号：PCT/US2008/066539
申请日：2008-06-11
申请人： SEMILEDS CORPORATION , LIU, Wen-Huang , CHU, Chen-Fu , CHU, Jiunn-Yi , CHENG, Chao-Chen , CHENG, Hao-Chun , FAN, Feng-Hsu , CHANG, Yuan-Hsiao
发明人： LIU, Wen-Huang , CHU, Chen-Fu , CHU, Jiunn-Yi , CHENG, Chao-Chen , CHENG, Hao-Chun , FAN, Feng-Hsu , CHANG, Yuan-Hsiao
IPC分类号： H01L29/207
CPC分类号： H01L33/38 , H01L27/15 , H01L33/385 , H01L33/40 , H01L33/44 , H01L2224/48091 , H01L2224/48465 , H01L2224/4903 , H01L2924/00014 , H01L2924/00
摘要： Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.
摘要翻译：提供了用于控制诸如LED的半导体器件中的电流的技术。对于一些实施例，可以提供包括相邻的高和低接触区域的电流引导结构。对于一些实施例，可以提供第二电流路径（除了n接触焊盘和金属合金衬底之间的电流路径之外）。对于一些实施例，可以提供电流引导结构和第二电流路径。

10. 发明申请

WO2008045886A3 PROTECTION FOR THE EPITAXIAL STRUCTURE OF METAL DEVICES 审中-公开
标题翻译：保护金属器件的外延结构
公开(公告)号：WO2008045886A3
公开(公告)日：2008-06-12
申请号：PCT/US2007080836
申请日：2007-10-09
申请人： SEMI PHOTONICS CO LTD , FAN FENG-HSU , DOAN TRUNG TRI , TRAN CHUONG ANH , CHU CHEN-FU , CHENG CHAO-CHEN , CHU JIUNN-YI , LIU WEN-HUANG , CHENG HAO-CHUN , YEN JUI-KANG
发明人： FAN FENG-HSU , DOAN TRUNG TRI , TRAN CHUONG ANH , CHU CHEN-FU , CHENG CHAO-CHEN , CHU JIUNN-YI , LIU WEN-HUANG , CHENG HAO-CHUN , YEN JUI-KANG
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/405 , H01L33/44 , H01L33/64
摘要： Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.
摘要翻译：提供了制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器器件。相应地生产的器件可以获益于比传统金属器件更高的产量和更高的性能，例如更高的发光二极管亮度和更高的导热率。此外，本发明公开了在具有原始非（或低）导热和/或非导电的金属装置的高散热率的情况下，可应用于GaN基电子装置的制造领域中的技术，（或低）导电载体衬底，已经被移除。

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