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1. 发明授权

US08614394B2 P-n zinc oxide nanowires and methods of manufacturing the same 有权
标题翻译： P-n氧化锌纳米线及其制造方法
公开(公告)号：US08614394B2
公开(公告)日：2013-12-24
申请号：US12656003
申请日：2010-01-13
申请人： Seung-nam Cha , Byong-gwon Song , Jae-eun Jang
发明人： Seung-nam Cha , Byong-gwon Song , Jae-eun Jang
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L31/04 , B82Y30/00 , C01G9/02 , C01P2002/85 , C01P2004/03 , C01P2004/04 , C01P2004/16 , H01L31/0352 , H01L31/18 , Y02E10/50
摘要： Disclosed are p-n zinc (Zn) oxide nanowires and a methods of manufacturing the same. A p-n Zn oxide nanowire includes a p-n junction structure in which phosphorus (P) is on a surface of a Zn oxide nanowire.
摘要翻译：公开了p-n锌（Zn）氧化物纳米线及其制造方法。 p-n型Zn氧化物纳米线包括其中磷（P）在Zn氧化物纳米线的表面上的p-n结结构。

2. 发明授权

US08345343B2 Reflective display device 有权
标题翻译：反光显示装置
公开(公告)号：US08345343B2
公开(公告)日：2013-01-01
申请号：US13069786
申请日：2011-03-23
申请人： Jung-Woo Kim , Byong-Gwon Song , Hyuk-Jun Kwon
发明人： Jung-Woo Kim , Byong-Gwon Song , Hyuk-Jun Kwon
IPC分类号： G02F1/03 , G02F1/01 , G02F1/13
CPC分类号： G02F1/133553 , G02F1/1334 , G02F2001/136222 , G02F2201/52
摘要： A reflective display device including: a substrate; a reflective layer on the substrate and configured to reflect light incident on the reflective layer; a color filter layer on the reflective layer; and an optical shutter layer on the color filter layer. Each pixel of a plurality of pixels of the reflective display device includes a plurality of sub-pixels and each sub-pixel includes the substrate, the reflective layer, the color filter layer, and the optical shutter layer, and for each pixel, the color filter layer includes a plurality of color filter elements corresponding to colors respectively obtained by the plurality of sub-pixels. At least one of the plurality of color filter elements includes a composite color area including a plurality of white areas configured to let white light pass through them such that the white light is directly reflected by the reflective layer and the plurality of white areas are discontinuously distributed in at least a portion of the composite color area through which light of the obtained colors passes.
摘要翻译：一种反射显示装置，包括：基板; 反射层，被配置为反射入射在反射层上的光; 反射层上的滤色器层; 以及滤色层上的光学快门层。反射显示装置的多个像素的每个像素包括多个子像素，并且每个子像素包括基板，反射层，滤色器层和光学快门层，并且对于每个像素，颜色过滤层包括与分别由多个子像素获得的颜色对应的多个滤色器元件。所述多个滤色器元件中的至少一个包括复合颜色区域，所述复合颜色区域包括多个白色区域，所述多个白色区域被配置为使白色光通过它们，使得所述白色光直接被所述反射层反射，并且所述多个白色区域不连续地分布在所获得的颜色的光通过的复合颜色区域的至少一部分中。

3. 发明申请

US20120049696A1 PIEZOELECTRIC DEVICE USING NANOPORE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：使用NANOPORE的压电器件及其制造方法
公开(公告)号：US20120049696A1
公开(公告)日：2012-03-01
申请号：US13035495
申请日：2011-02-25
申请人： Seung-Nam CHA , Byoung-Lyong CHOI , Byong-Gwon SONG
发明人： Seung-Nam CHA , Byoung-Lyong CHOI , Byong-Gwon SONG
IPC分类号： H01L41/04 , H01L41/22
CPC分类号： H01L41/332 , H01L41/183 , H01L41/1876 , Y10T29/42
摘要： A piezoelectric device including an engraved nanostructure body and a method of manufacturing the same are provided. The piezoelectric device includes a matrix including a piezoelectric material, a nanopore may be disposed in the matrix, and the nanopore may be extended substantially in a predetermined direction. The method may include coating a piezoelectric material on a substrate having a nanostructure body disposed thereon, and selectively etching the nanostructure body.
摘要翻译：提供一种包括雕刻纳米结构体的压电装置及其制造方法。压电装置包括包括压电材料的基体，纳米孔可以设置在基质中，并且纳米孔可以基本上沿预定方向延伸。该方法可以包括在其上设置有纳米结构体的基板上涂覆压电材料，并且选择性地蚀刻纳米结构体。

4. 发明申请

US20110317236A1 Reflective Display Device 有权
标题翻译：反光显示装置
公开(公告)号：US20110317236A1
公开(公告)日：2011-12-29
申请号：US13069786
申请日：2011-03-23
申请人： Jung-Woo Kim , Byong-Gwon Song , Hyuk-Jun Kwon
发明人： Jung-Woo Kim , Byong-Gwon Song , Hyuk-Jun Kwon
IPC分类号： G02F1/23
CPC分类号： G02F1/133553 , G02F1/1334 , G02F2001/136222 , G02F2201/52
摘要： A reflective display device including: a substrate; a reflective layer on the substrate and configured to reflect light incident on the reflective layer; a color filter layer on the reflective layer; and an optical shutter layer on the color filter layer. Each pixel of a plurality of pixels of the reflective display device includes a plurality of sub-pixels and each sub-pixel includes the substrate, the reflective layer, the color filter layer, and the optical shutter layer, and for each pixel, the color filter layer includes a plurality of color filter elements corresponding to colors respectively obtained by the plurality of sub-pixels. At least one of the plurality of color filter elements includes a composite color area including a plurality of white areas configured to let white light pass through them such that the white light is directly reflected by the reflective layer and the plurality of white areas are discontinuously distributed in at least a portion of the composite color area through which light of the obtained colors passes.
摘要翻译：一种反射显示装置，包括：基板; 反射层，被配置为反射入射在反射层上的光; 反射层上的滤色器层; 以及滤色层上的光学快门层。反射显示装置的多个像素的每个像素包括多个子像素，并且每个子像素包括基板，反射层，滤色器层和光学快门层，并且对于每个像素，颜色过滤层包括与分别由多个子像素获得的颜色对应的多个滤色器元件。所述多个滤色器元件中的至少一个包括复合颜色区域，所述复合颜色区域包括多个白色区域，所述多个白色区域被配置为使白色光通过它们，使得所述白色光直接被所述反射层反射，并且所述多个白色区域不连续地分布在所获得的颜色的光通过的复合颜色区域的至少一部分中。

5. 发明授权

US08053846B2 Field effect transistor (FET) having nano tube and method of manufacturing the FET 有权
标题翻译：具有纳米管的场效应晶体管（FET）及其制造方法
公开(公告)号：US08053846B2
公开(公告)日：2011-11-08
申请号：US11826170
申请日：2007-07-12
申请人： Seung-Nam Cha , Jae-Eun Jang , Jae-Eun Jung , Yong-Wan Jin , Byong-Gwon Song
发明人： Seung-Nam Cha , Jae-Eun Jang , Jae-Eun Jung , Yong-Wan Jin , Byong-Gwon Song
IPC分类号： H01L27/088
CPC分类号： H01L29/42372 , H01L21/2652 , H01L21/2807 , H01L21/28114 , H01L29/42376 , H01L29/4238 , H01L29/49 , H01L29/515 , H01L29/6659
摘要： A transistor includes: a semiconductor substrate; a channel region arranged on the semiconductor substrate; a source and a drain respectively arranged on either side of the channel region; and a conductive nano tube gate arranged on the semiconductor substrate to transverse the channel region between the source and the drain. Its method of manufacture includes: arranging a conductive nano tube on a surface of a semiconductor substrate; defining source and drain regions having predetermined sizes and traversing the nano tube; forming a metal layer on the source and drain regions; removing a portion of the metal layer formed on the nano tube to respectively form source and drain electrodes separated from the metal layer on either side of the nano tube; and doping a channel region below the nano tube arranged between the source and drain electrodes by ion-implanting.
摘要翻译：晶体管包括：半导体衬底; 布置在所述半导体衬底上的沟道区; 分别布置在通道区域的任一侧上的源极和漏极; 以及布置在半导体衬底上以横向源极和漏极之间的沟道区域的导电纳米管栅极。其制造方法包括：在半导体衬底的表面上布置导电纳米管; 限定具有预定尺寸并穿过纳米管的源区和漏区; 在源极和漏极区域上形成金属层; 去除形成在纳米管上的金属层的一部分，以分别形成与纳米管的任一侧上的金属层分离的源极和漏极; 以及通过离子注入在排列在源极和漏极之间的纳米管下方的沟道区域掺杂。

6. 发明授权

US07942714B2 Method of manufacturing field emission device 有权
标题翻译：场致发射装置的制造方法
公开(公告)号：US07942714B2
公开(公告)日：2011-05-17
申请号：US11790657
申请日：2007-04-26
申请人： Ho-Suk Kang , Yong-Wan Jin , Sun-Il Kim , Deuk-Seok Chung , Byong-Gwon Song , Shang-Hyeun Park
发明人： Ho-Suk Kang , Yong-Wan Jin , Sun-Il Kim , Deuk-Seok Chung , Byong-Gwon Song , Shang-Hyeun Park
IPC分类号： H01J9/02 , H01J1/304
CPC分类号： H01J63/02 , H01J9/025 , H01J2201/30469 , H01J2329/0455
摘要： A method of manufacturing a field emission display includes: sequentially forming a cathode electrode, an insulating layer, and a gate material layer on a substrate; forming a metal sacrificial layer on an upper surface of the gate material layer; forming a through hole to expose the insulating layer in the metal sacrificial layer and the gate material layer; forming an emitter hole to expose the cathode electrode in the insulating layer exposed through the through hole; forming a gate electrode by etching the gate material layer constituting an upper wall of the emitter hole; and forming an emitter of Carbon NanoTubes (CNTs) on an upper surface of the cathode electrode located below the through hole.
摘要翻译：场发射显示器的制造方法包括：在基板上依次形成阴极电极，绝缘层和栅极材料层; 在栅极材料层的上表面上形成金属牺牲层; 形成通孔以暴露金属牺牲层和栅极材料层中的绝缘层; 形成发射极孔，露出通过该通孔的绝缘层中的阴极电极; 通过蚀刻构成发射极孔的上壁的栅极材料层来形成栅电极; 以及在位于通孔下方的阴极电极的上表面上形成碳纳米管（CNT）的发射极。

7. 发明授权

US07727039B2 Method of aging field emission devices 有权
标题翻译：老化场发射装置的方法
公开(公告)号：US07727039B2
公开(公告)日：2010-06-01
申请号：US11806658
申请日：2007-06-01
申请人： Chan-wook Baik , Sun-il Kim , Deuk-seok Chung , Byong-gwon Song , Min-jong Bae
发明人： Chan-wook Baik , Sun-il Kim , Deuk-seok Chung , Byong-gwon Song , Min-jong Bae
IPC分类号： H01J9/00 , G09G3/00
CPC分类号： H01J9/42 , H01J29/04 , H01J31/127
摘要： A method of aging a field emission device including a cathode and an anode arranged parallel to each other, an emitter arranged on the cathode to emit electrons to the anode, and a gate electrode arranged on the cathode adjacent to the emitter, the method including: supplying a voltage to the cathode; supplying a voltage to the gate; and then supplying a sufficiently low voltage to the anode so as to prevent a short-circuited portion between the cathode and the gate electrode from being permanently damaged due to an overcurrent.
摘要翻译：一种老化场致发射器件的方法，该场致发射器件包括彼此平行布置的阴极和阳极，布置在阴极上以向阳极发射电子的发射极和布置在阴极上与发射极相邻的栅极，该方法包括：向阴极供电; 向门提供电压; 然后向阳极提供足够低的电压，以防止阴极和栅电极之间的短路部分由于过电流而永久损坏。

8. 发明授权

US07432646B2 Thermal electron emission backlight device 失效
标题翻译：热电子发射背光装置
公开(公告)号：US07432646B2
公开(公告)日：2008-10-07
申请号：US11432533
申请日：2006-05-12
申请人： Jun-Hee Choi , Deuk-Seok Chung , Byong-Gwon Song , Andrei Zoulkarneev , Chan-Wook Baik , Ha-Jong Kim , Moon-Jin Shin , Ho-Suk Kang
发明人： Jun-Hee Choi , Deuk-Seok Chung , Byong-Gwon Song , Andrei Zoulkarneev , Chan-Wook Baik , Ha-Jong Kim , Moon-Jin Shin , Ho-Suk Kang
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01J63/02 , H01J63/04
摘要： A thermal electron emission backlight device comprises: a first substrate and a second substrate disposed in parallel and separated by a predetermined distance from each other; a first anode electrode and a second anode electrode facing the first anode electrode, the first and second anode electrodes being formed on inner surfaces of the first substrate and the second substrate, respectively; cathode electrodes disposed at predetermined intervals and in parallel with each other between the first substrate and the second substrate; a phosphor layer formed on the second anode electrode; and a plurality of spacers disposed between the first substrate and the second substrate so as to maintain the predetermined distance therebetween. When a predetermined voltage is applied to the cathode electrodes, thermal electrons are emitted from the cathode electrodes.
摘要翻译：热电子发射背光装置包括：第一基板和第二基板，彼此平行设置并隔开预定的距离; 第一阳极电极和面对第一阳极电极的第二阳极电极，第一阳极电极和第二阳极电极分别形成在第一基板和第二基板的内表面上; 在第一基板和第二基板之间以预定间隔布置并且彼此平行的阴极; 形成在所述第二阳极电极上的荧光体层; 以及设置在第一基板和第二基板之间的多个间隔件，以便保持它们之间的预定距离。当向阴极施加预定电压时，从阴极发射热电子。

9. 发明申请

US20080164805A1 Anode panel and field emission type backlight unit having the same 失效
标题翻译：阳极面板和场发射型背光单元具有相同的功能
公开(公告)号：US20080164805A1
公开(公告)日：2008-07-10
申请号：US11987384
申请日：2007-11-29
申请人： Byong-gwon Song , Seung-nam Cha , Sun-il Kim , Ho-suk Kang , Yong-wan Jin , Min-jong Bae
发明人： Byong-gwon Song , Seung-nam Cha , Sun-il Kim , Ho-suk Kang , Yong-wan Jin , Min-jong Bae
IPC分类号： H01J1/62
CPC分类号： H01J31/127 , G02F1/133604 , G02F2001/133607 , G02F2001/133625 , H01J29/08 , H01J61/025 , H01J63/06
摘要： Provided is an anode panel of a field emission type backlight unit. The anode panel includes a substrate, an anode formed on a lower surface of the substrate, a phosphor layer coated on a lower surface of the anode and a liquid pack disposed on an upper surface of the substrate, said liquid pack having a transparent cover having cylindrical lens type curved portions and transparent liquid filling in the curved portions.
摘要翻译：提供了场发射型背光单元的阳极面板。所述阳极面板包括基板，形成在所述基板的下表面上的阳极，涂覆在所述阳极的下表面上的荧光体层和设置在所述基板的上表面上的液体组件，所述液体组件具有透明盖，所述透明盖具有柱面透镜型弯曲部分和透明液体填充在弯曲部分中。

10. 发明申请

US20080150043A1 Field Effect Transistor (FET) having nano tube and method of manufacturing the FET 有权
标题翻译：具有纳米管的场效应晶体管（FET）和制造FET的方法
公开(公告)号：US20080150043A1
公开(公告)日：2008-06-26
申请号：US11826170
申请日：2007-07-12
申请人： Seung-Nam Cha , Jae-Eun Jang , Jae-Eun Jung , Yong-Wan Jin , Byong-Gwon Song
发明人： Seung-Nam Cha , Jae-Eun Jang , Jae-Eun Jung , Yong-Wan Jin , Byong-Gwon Song
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/42372 , H01L21/2652 , H01L21/2807 , H01L21/28114 , H01L29/42376 , H01L29/4238 , H01L29/49 , H01L29/515 , H01L29/6659
摘要： A transistor includes: a semiconductor substrate; a channel region arranged on the semiconductor substrate; a source and a drain respectively arranged on either side of the channel region; and a conductive nano tube gate arranged on the semiconductor substrate to transverse the channel region between the source and the drain. Its method of manufacture includes: arranging a conductive nano tube on a surface of a semiconductor substrate; defining source and drain regions having predetermined sizes and traversing the nano tube; forming a metal layer on the source and drain regions; removing a portion of the metal layer formed on the nano tube to respectively form source and drain electrodes separated from the metal layer on either side of the nano tube; and doping a channel region below the nano tube arranged between the source and drain electrodes by ion-implanting.
摘要翻译：晶体管包括：半导体衬底; 布置在所述半导体衬底上的沟道区; 分别布置在通道区域的任一侧上的源极和漏极; 以及布置在半导体衬底上以横向源极和漏极之间的沟道区域的导电纳米管栅极。其制造方法包括：在半导体衬底的表面上布置导电纳米管; 限定具有预定尺寸并穿过纳米管的源区和漏区; 在源极和漏极区域上形成金属层; 去除形成在纳米管上的金属层的一部分，以分别形成与纳米管的任一侧上的金属层分离的源极和漏极; 以及通过离子注入在排列在源极和漏极之间的纳米管下方的沟道区域掺杂。

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