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    • 4. 发明申请
    • High selectivity slurry compositions for chemical mechanical polishing
    • 用于化学机械抛光的高选择性浆料组合物
    • US20060097219A1
    • 2006-05-11
    • US11258466
    • 2005-10-24
    • Benjamin BonnerAnand IyerOlivier NguyenDonald ChuaChristopher LeeShijian Li
    • Benjamin BonnerAnand IyerOlivier NguyenDonald ChuaChristopher LeeShijian Li
    • C09K13/00H01L21/461
    • H01L21/31053C09G1/02C09K3/1463
    • A chemical-mechanical polishing composition that includes less than about 1% wt. abrasive, an additive, and water, where a weigh percent of the additive is greater than a weight percent of the abrasive. Also, a method of polishing a semiconductor substrate in a shallow trench isolation process, the method including contacting the substrate with a polishing pad of a polishing apparatus while applying a high selectivity slurry to the polishing pad, where the slurry comprises less than about 1% wt. abrasive, an additive, and water, and where a weigh percent of the additive is greater than a weight percent of the abrasive. Also, a method of making a chemical-mechanical polishing slurry composition, the method including adding together an abrasive, an additive and water to form the slurry, where a weigh percent of the additive is greater than a weight percent of the abrasive, and the abrasive and additive together comprise less than 2% by wt. of the slurry.
    • 化学机械抛光组合物,其包含小于约1重量% 研磨剂,添加剂和水,其中添加剂的重量百分比大于研磨剂的重量百分比。 此外,在浅沟槽隔离工艺中抛光半导体衬底的方法,该方法包括使衬底与抛光装置的抛光垫接触,同时向抛光垫施加高选择性浆料,其中浆料包含小于约1% 重量 研磨剂,添加剂和水,并且其中添加剂的重量百分比大于研磨剂的重量百分比。 另外,制备化学 - 机械抛光浆料组合物的方法,该方法包括将研磨剂,添加剂和水相加以形成浆料,其中添加剂的重量百分比大于磨料的重量百分数,并且 研磨剂和添加剂一起包含小于2重量%。 的浆料。
    • 7. 发明申请
    • HIGH SELECTIVITY SLURRY COMPOSITIONS FOR CHEMICAL MECHANICAL POLISHING
    • 高选择性浆料组合物化学机械抛光
    • US20070218693A1
    • 2007-09-20
    • US11750897
    • 2007-05-18
    • Benjamin BonnerAnand IyerOlivier NguyenDonald ChuaChristopher LeeShijian Li
    • Benjamin BonnerAnand IyerOlivier NguyenDonald ChuaChristopher LeeShijian Li
    • C09G1/00
    • H01L21/31053C09G1/02C09K3/1463
    • A chemical-mechanical polishing composition that includes less than about 1% wt. abrasive, an additive, and water, where a weigh percent of the additive is greater than a weight percent of the abrasive. Also, a method of polishing a semiconductor substrate in a shallow trench isolation process, the method including contacting the substrate with a polishing pad of a polishing apparatus while applying a high selectivity slurry to the polishing pad, where the slurry comprises less than about 1% wt. abrasive, an additive, and water, and where a weigh percent of the additive is greater than a weight percent of the abrasive. Also, a method of making a chemical-mechanical polishing slurry composition, the method including adding together an abrasive, an additive and water to form the slurry, where a weigh percent of the additive is greater than a weight percent of the abrasive, and the abrasive and additive together comprise less than 2% by wt. of the slurry.
    • 化学机械抛光组合物,其包含小于约1重量% 研磨剂,添加剂和水,其中添加剂的重量百分比大于研磨剂的重量百分比。 此外,在浅沟槽隔离工艺中抛光半导体衬底的方法,该方法包括使衬底与抛光装置的抛光垫接触,同时向抛光垫施加高选择性浆料,其中浆料包含小于约1% 重量 研磨剂,添加剂和水,并且其中添加剂的重量百分比大于研磨剂的重量百分比。 另外,制备化学 - 机械抛光浆料组合物的方法,该方法包括将研磨剂,添加剂和水相加以形成浆料,其中添加剂的重量百分比大于磨料的重量百分数,并且 研磨剂和添加剂一起包含小于2重量%。 的浆料。