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1. 发明申请

US20130068297A1 Black Silicon Solar Cell and Its Preparation Method 审中-公开
标题翻译：黑硅太阳能电池及其制备方法
公开(公告)号：US20130068297A1
公开(公告)日：2013-03-21
申请号：US13699740
申请日：2010-08-05
申请人： Yang Xia , Bangwu Liu , Chaobo Li , Jie Liu , Minggang Wang , Yongtao Li
发明人： Yang Xia , Bangwu Liu , Chaobo Li , Jie Liu , Minggang Wang , Yongtao Li
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L21/26506 , C30B29/06 , C30B31/22 , H01L21/2236 , H01L31/02363 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A black silicon solar cell includes a metal back electrode, the crystal silicon, a black silicon layer, a passivation layer and a metal gate; wherein, the metal back electrode is located on the back surface of the crystal silicon, the black silicon layer is located on the crystal silicon, the passivation layer is located on the black silicon layer, the metal gate is located on the passivation layer. The fabrication method includes: carrying out pretreatment of the silicon wafer; preparing the black silicon layer on the surface of the pretreated silicon wafer by using plasma immersion ion implantation technology; preparing an emitter on the black silicon layer, and carrying out passivation treatment on the emitter to form the passivation layer; respectively preparing the metal back electrode and the metal gate on the back surface of the single crystal silicon wafer and the passivation layer, respectively.
摘要翻译：黑硅太阳能电池包括金属背电极，晶体硅，黑硅层，钝化层和金属栅; 其中，金属背电极位于晶体硅的背面，黑色硅层位于晶体硅上，钝化层位于黑色硅层上，金属栅极位于钝化层上。该制造方法包括：进行硅晶片的预处理; 通过使用等离子体浸没离子注入技术在预处理的硅晶片的表面上制备黑色硅层; 在黑色硅层上制备发射极，并在发射极上进行钝化处理以形成钝化层; 分别在单晶硅晶片和钝化层的背面分别制备金属背电极和金属栅极。

2. 发明授权

US08871618B2 In-situ fabrication method for silicon solar cell 有权
标题翻译：硅太阳能电池的原位制造方法
公开(公告)号：US08871618B2
公开(公告)日：2014-10-28
申请号：US13699739
申请日：2010-09-08
申请人： Yang Xia , Bangwu Liu , Chaobo Li , Jie Liu , Minggang Wang , Yongtao Li
发明人： Yang Xia , Bangwu Liu , Chaobo Li , Jie Liu , Minggang Wang , Yongtao Li
IPC分类号： H01L21/26 , H01L31/18 , C23C14/48 , H01L21/223
CPC分类号： H01L31/18 , C23C14/48 , H01L21/2236 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An in-situ fabrication method for a silicon solar cell includes the following steps: pretreating a silicon chip; placing the pretreated silicon chip in an implantation chamber of a plasma immersion ion implantation machine; completing the preparation of black silicon via a plasma immersion ion implantation process; making a PN junction and forming a passivation layer on the black silicon; after making the PN junction and forming the passivation layer, removing the black silicon from the plasma immersion ion implantation machine; preparing a metal back electrode on the back of the black silicon; preparing a metal grid on the passivation layer; obtaining a solar cell after encapsulation. Said method enables black silicon preparation, PN junction preparation, and passivation layer formation in-situ, greatly reducing the amount of equipment needed for the preparation of solar cells and the preparation cost. In addition, the method is simple and easy to control.
摘要翻译：硅太阳能电池的原位制造方法包括以下步骤：预处理硅芯片; 将预处理的硅芯片放置在等离子体浸入式离子注入机的注入室中; 通过等离子体浸没离子注入工艺完成黑硅的制备; 制造PN结并在黑色硅上形成钝化层; 在形成PN结并形成钝化层之后，从等离子体浸入离子注入机中除去黑色硅; 在黑色硅的背面制备金属背电极; 在钝化层上制备金属网格; 封装后获得太阳能电池。所述方法使黑硅制备，PN结制备和钝化层原位形成，大大减少了制备太阳能电池所需的设备量和制备成本。另外，该方法简单易控。

3. 发明申请

US20130071965A1 In-Situ Fabrication Method for Silicon Solar Cell 有权
标题翻译：硅太阳能电池的原位制造方法
公开(公告)号：US20130071965A1
公开(公告)日：2013-03-21
申请号：US13699739
申请日：2010-09-08
申请人： Yang Xia , Bangwu Liu , Chaobo Li , Jie Liu , Minggang Wang , Yongtao Li
发明人： Yang Xia , Bangwu Liu , Chaobo Li , Jie Liu , Minggang Wang , Yongtao Li
IPC分类号： H01L31/18
CPC分类号： H01L31/18 , C23C14/48 , H01L21/2236 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An in-situ fabrication method for a silicon solar cell includes the following steps: pretreating a silicon chip; placing the pretreated silicon chip in an implantation chamber of a plasma immersion ion implantation machine; completing the preparation of black silicon via a plasma immersion ion implantation process; making a PN junction and forming a passivation layer on the black silicon; after making the PN junction and forming the passivation layer, removing the black silicon from the plasma immersion ion implantation machine; preparing a metal back electrode on the back of the black silicon; preparing a metal grid on the passivation layer; obtaining a solar cell after encapsulation. Said method enables black silicon preparation, PN junction preparation, and passivation layer formation in-situ, greatly reducing the amount of equipment needed for the preparation of solar cells and the preparation cost. In addition, the method is simple and easy to control.
摘要翻译：硅太阳能电池的原位制造方法包括以下步骤：预处理硅芯片; 将预处理的硅芯片放置在等离子体浸入式离子注入机的注入室中; 通过等离子体浸没离子注入工艺完成黑硅的制备; 制造PN结并在黑色硅上形成钝化层; 在形成PN结并形成钝化层之后，从等离子体浸入离子注入机中除去黑色硅; 在黑色硅的背面制备金属背电极; 在钝化层上制备金属网格; 封装后获得太阳能电池。所述方法使黑硅制备，PN结制备和钝化层原位形成，大大减少了制备太阳能电池所需的设备量和制备成本。另外，该方法简单易控。

4. 发明授权

US08703591B2 Method for fabricating black silicon by using plasma immersion ion implantation 有权
标题翻译：通过等离子体浸没离子注入制造黑色硅的方法
公开(公告)号：US08703591B2
公开(公告)日：2014-04-22
申请号：US13699741
申请日：2010-07-26
申请人： Yang Xia , Bangwu Liu , Chaobo Li , Jie Liu , Minggang Wang , Yongtao Li
发明人： Yang Xia , Bangwu Liu , Chaobo Li , Jie Liu , Minggang Wang , Yongtao Li
IPC分类号： H01L21/26
CPC分类号： H01L21/26506 , C30B29/06 , C30B31/22 , H01L21/2236 , H01L31/02363 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method for fabricating black silicon by using plasma immersion ion implantation is provided, which includes: putting a silicon wafer into a chamber of a black silicon fabrication apparatus; adjusting processing parameters of the black silicon fabrication apparatus to preset scales; generating plasmas in the chamber of the black silicon fabrication apparatus; implanting reactive ions among the plasmas into the silicon wafer, and forming the black silicon by means of the reaction of the reactive ions and the silicon wafer. The method can form the black silicon which has a strong light absorption property and is sensitive to light, and has advantages of high productivity, low cost and simple production process.
摘要翻译：提供了一种通过使用等离子体浸没离子注入来制造黑色硅的方法，其包括：将硅晶片放入黑色硅制造装置的腔室中; 调整黑硅制造装置的预设刻度的处理参数; 在黑硅制造装置的室中产生等离子体; 将等离子体中的反应离子注入到硅晶片中，并且通过反应离子和硅晶片的反应形成黑色硅。该方法可以形成具有强光吸收性并对光敏感的黑色硅，具有生产率高，成本低，生产工艺简单的优点。

5. 发明申请

US20130072007A1 Method for Fabricating Black Silicon by Using Plasma Immersion Ion Implantation 有权
标题翻译：通过使用等离子体浸没离子注入制造黑色硅的方法
公开(公告)号：US20130072007A1
公开(公告)日：2013-03-21
申请号：US13699741
申请日：2010-07-26
申请人： Yang Xia , Bangwu Liu , Chaobo Li , Jie Liu , Minggang Wang , Yongtao Li
发明人： Yang Xia , Bangwu Liu , Chaobo Li , Jie Liu , Minggang Wang , Yongtao Li
IPC分类号： H01L21/265
CPC分类号： H01L21/26506 , C30B29/06 , C30B31/22 , H01L21/2236 , H01L31/02363 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method for fabricating black silicon by using plasma immersion ion implantation is provided, which includes: putting a silicon wafer into a chamber of a black silicon fabrication apparatus; adjusting processing parameters of the black silicon fabrication apparatus to preset scales; generating plasmas in the chamber of the black silicon fabrication apparatus; implanting reactive ions among the plasmas into the silicon wafer, and forming the black silicon by means of the reaction of the reactive ions and the silicon wafer. The method can form the black silicon which has a strong light absorption property and is sensitive to light, and has advantages of high productivity, low cost and simple production process.
摘要翻译：提供了一种通过使用等离子体浸没离子注入来制造黑色硅的方法，其包括：将硅晶片放入黑色硅制造装置的腔室中; 调整黑硅制造装置的预设刻度的处理参数; 在黑硅制造装置的室中产生等离子体; 将等离子体中的反应离子注入到硅晶片中，并且通过反应离子和硅晶片的反应形成黑色硅。该方法可以形成具有强光吸收性并对光敏感的黑色硅，具有生产率高，成本低，生产工艺简单的优点。

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