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1. 发明授权

US07447092B2 Write driver circuit for controlling a write current applied to a phase change memory based on an ambient temperature 有权
标题翻译：写入驱动电路，用于根据环境温度控制施加到相变存储器的写入电流
公开(公告)号：US07447092B2
公开(公告)日：2008-11-04
申请号：US11079198
申请日：2005-03-15
申请人： Baek-Hyung Cho , Woo-Yeong Cho , Hyung-Rok Oh , Byung-Gil Choi
发明人： Baek-Hyung Cho , Woo-Yeong Cho , Hyung-Rok Oh , Byung-Gil Choi
IPC分类号： G11C7/04
CPC分类号： G11C13/0004 , G11C7/04 , G11C13/0069 , G11C2013/0078
摘要： A programming method which controls the amount of a write current applied TO Phase-change Random Access Memory (PRAM), and a write driver circuit realizing the programming method. The programming method includes maintaining a ratio of a resistance of the PCM in the higher resistance state to a resistance of the phase change material (PCM) in the lower resistance state constant or substantially constant independent of an ambient temperature. The ratio may be maintained by increasing, decreasing or keeping the same a reset current and/or a set current.
摘要翻译：控制施加到TO相变随机存取存储器（PRAM）的写入电流的量的编程方法以及实现编程方法的写入驱动器电路。编程方法包括保持在较高电阻状态下的PCM的电阻与相变材料（PCM）的电阻在较低电阻状态下的比率恒定或基本恒定，而与环境温度无关。可以通过增加，减少或保持复位电流和/或设定电流来保持该比率。

2. 发明申请

US20060050548A1 Semiconductor memory device capable of compensating for leakage current 有权
标题翻译：能够补偿漏电流的半导体存储器件
公开(公告)号：US20060050548A1
公开(公告)日：2006-03-09
申请号：US11220294
申请日：2005-09-06
申请人： Hyung-Rok Oh , Baek-Hyung Cho , Choong-Keun Kwak
发明人： Hyung-Rok Oh , Baek-Hyung Cho , Choong-Keun Kwak
IPC分类号： G11C11/00
CPC分类号： G11C7/12 , G11C7/14 , G11C13/0004 , G11C13/0026 , G11C13/004 , G11C2013/0054 , G11C2213/79
摘要： A semiconductor memory device compensates leakage current. A plurality of memory cells is disposed at intersections of word lines and bit lines. A plurality of dummy cells is connected to at least one dummy bit line. A leakage compensation circuit is connected to the at least one dummy bit line that outputs a leakage compensation current to at least one of the bit lines. A read current supply circuit outputs a read current necessary for a read operation to at least one of the bit lines in response to a first control signal. The memory device is a phase-change memory device containing phase-change material. The semiconductor memory device compensates leakage current in a read operation and supplies the leakage compensation current to a selected bit line, thereby suppressing error operation occurrence caused by leakage current.
摘要翻译：半导体存储器件补偿漏电流。多个存储单元设置在字线和位线的交点处。多个虚拟单元被连接到至少一个虚拟位线。泄漏补偿电路连接到至少一个虚拟位线，其向至少一个位线输出泄漏补偿电流。读取电流供应电路响应于第一控制信号向至少一个位线输出读取操作所需的读取电流。存储器件是包含相变材料的相变存储器件。半导体存储器件在读取操作中补偿漏电流，并将泄漏补偿电流提供给所选择的位线，从而抑制由漏电流引起的误操作发生。

3. 发明授权

US06885602B2 Programming method of controlling the amount of write current applied to phase change memory device and write driver circuit therefor 有权
标题翻译：控制施加到相变存储器件的写入电流和写入驱动器电路的编程方法
公开(公告)号：US06885602B2
公开(公告)日：2005-04-26
申请号：US10921797
申请日：2004-08-20
申请人： Baek-Hyung Cho , Woo-Yeong Cho , Hyung-Rok Oh , Byung-Gil Choi
发明人： Baek-Hyung Cho , Woo-Yeong Cho , Hyung-Rok Oh , Byung-Gil Choi
IPC分类号： G11C13/00 , G11C13/02 , G11C16/02 , H01L27/105 , H01L45/00 , G11C7/04
CPC分类号： G11C13/0004 , G11C7/04 , G11C13/0069 , G11C2013/0078
摘要： A programming method which controls the amount of a write current applied to a Phase-change Random Access Memory (PRAM), and a write driver circuit realizing the programming method. The programming method includes maintaining a ratio of a resistance of the PCM in the higher resistance state to a resistance of the Phase-change Memory (PCM) in the lower resistance state constant or substantially constant independent of an ambient temperature. The ratio may be maintained by increasing, decreasing, or keeping the same a reset current and/or a set current.
摘要翻译：控制施加到相变随机存取存储器（PRAM）的写入电流的量的编程方法以及实现编程方法的写入驱动器电路。编程方法包括保持在较高电阻状态下的PCM的电阻与相位变化存储器（PCM）的电阻在较低电阻状态下的比率恒定或基本上恒定，而与环境温度无关。可以通过增加，减少或保持相同的复位电流和/或设定电流来维持该比率。

4. 发明申请

US20050041464A1 PROGRAMMING METHOD OF CONTROLLING THE AMOUNT OF WRITE CURRENT APPLIED TO PHASE CHANGE MEMORY DEVICE AND WRITE DRIVER CIRCUIT THEREFOR 有权
标题翻译：控制适用于相变存储器件和写驱动电路的写电流量的编程方法
公开(公告)号：US20050041464A1
公开(公告)日：2005-02-24
申请号：US10921797
申请日：2004-08-20
申请人： Baek-Hyung Cho , Woo-Yeong Cho , Hyung-Rok Oh , Byung-Gil Choi
发明人： Baek-Hyung Cho , Woo-Yeong Cho , Hyung-Rok Oh , Byung-Gil Choi
IPC分类号： G11C13/00 , G11C13/02 , G11C16/02 , H01L27/105 , H01L45/00 , G11C11/00
CPC分类号： G11C13/0004 , G11C7/04 , G11C13/0069 , G11C2013/0078
摘要： A programming method which controls the amount of a write current applied to a Phase-change Random Access Memory (PRAM), and a write driver circuit realizing the programming method. The programming method includes maintaining a ratio of a resistance of the PCM in the higher resistance state to a resistance of the PCM in the lower resistance state constant or substantially constant independent of an ambient temperature. The ratio may be maintained by increasing, decreasing, or keeping the same a reset current and/or a set current.
摘要翻译：控制施加到相变随机存取存储器（PRAM）的写入电流的量的编程方法以及实现编程方法的写入驱动器电路。编程方法包括保持PCM在较高电阻状态下的电阻与PCM在较低电阻状态下的电阻的比率恒定或基本恒定，而与环境温度无关。可以通过增加，减少或保持相同的复位电流和/或设定电流来维持该比率。

5. 发明申请

US20050162303A1 Programming method of controlling the amount of write current applied to phase change memory device and write driver circuit therefor 有权
标题翻译：控制施加到相变存储器件的写入电流和写入驱动器电路的编程方法
公开(公告)号：US20050162303A1
公开(公告)日：2005-07-28
申请号：US11079198
申请日：2005-03-15
申请人： Baek-Hyung Cho , Woo-Yeong Cho , Hyung-Rok Oh , Byung-Gil Choi
发明人： Baek-Hyung Cho , Woo-Yeong Cho , Hyung-Rok Oh , Byung-Gil Choi
IPC分类号： G11C13/00 , G11C13/02 , G11C16/02 , H01L27/105 , H01L45/00 , H03M3/00
CPC分类号： G11C13/0004 , G11C7/04 , G11C13/0069 , G11C2013/0078
摘要： A programming method which controls the amount of a write current applied to a Phase-change Random Access Memory (PRAM), and a write driver circuit realizing the programming method. The programming method includes maintaining a ratio of a resistance of the PCM in the higher resistance state to a resistance of the PCM in the lower resistance state constant or substantially constant independent of an ambient temperature. The ratio may be maintained by increasing, decreasing, or keeping the same a reset current and/or a set current.
摘要翻译：控制施加到相变随机存取存储器（PRAM）的写入电流的量的编程方法以及实现编程方法的写入驱动器电路。编程方法包括保持PCM在较高电阻状态下的电阻与PCM在较低电阻状态下的电阻的比率恒定或基本恒定，而与环境温度无关。可以通过增加，减少或保持相同的复位电流和/或设定电流来维持该比率。

6. 发明授权

US5999390A Input buffer circuit for semiconductor device 失效
标题翻译：半导体器件的输入缓冲电路
公开(公告)号：US5999390A
公开(公告)日：1999-12-07
申请号：US122076
申请日：1998-07-24
申请人： Baek-Hyung Cho , Choong-Keun Kwak , Ho-Geun Shin
发明人： Baek-Hyung Cho , Choong-Keun Kwak , Ho-Geun Shin
IPC分类号： H01L27/04 , G01R31/28 , G01R31/3185 , H01L21/822 , H01L21/8238 , H01L27/092 , H03K19/003 , H03K19/0175 , H02H3/18
CPC分类号： H03K19/00315
摘要： A CMOS input buffer for semiconductor devices, that is capable of protecting its MOS transistors from gate oxide breakdown due to the application of high voltage greater than a normal power supply voltage.
摘要翻译：用于半导体器件的CMOS输入缓冲器，其能够通过施加大于正常电源电压的高电压来保护其MOS晶体管免受栅极氧化物击穿。

7. 发明授权

US07248494B2 Semiconductor memory device capable of compensating for leakage current 有权
标题翻译：能够补偿漏电流的半导体存储器件
公开(公告)号：US07248494B2
公开(公告)日：2007-07-24
申请号：US11220294
申请日：2005-09-06
申请人： Hyung-Rok Oh , Baek-Hyung Cho , Choong-Keun Kwak
发明人： Hyung-Rok Oh , Baek-Hyung Cho , Choong-Keun Kwak
IPC分类号： G11C11/00
CPC分类号： G11C7/12 , G11C7/14 , G11C13/0004 , G11C13/0026 , G11C13/004 , G11C2013/0054 , G11C2213/79
摘要： A semiconductor memory device compensates leakage current. A plurality of memory cells is disposed at intersections of word lines and bit lines. A plurality of dummy cells is connected to at least one dummy bit line. A leakage compensation circuit is connected to the at least one dummy bit line that outputs a leakage compensation current to at least one of the bit lines. A read current supply circuit outputs a read current necessary for a read operation to at least one of the bit lines in response to a first control signal. The memory device is a phase-change memory device containing phase-change material. The semiconductor memory device compensates leakage current in a read operation and supplies the leakage compensation current to a selected bit line, thereby suppressing error operation occurrence caused by leakage current.
摘要翻译：半导体存储器件补偿漏电流。多个存储单元设置在字线和位线的交点处。多个虚拟单元被连接到至少一个虚拟位线。泄漏补偿电路连接到至少一个虚拟位线，其向至少一个位线输出泄漏补偿电流。读取电流供应电路响应于第一控制信号向至少一个位线输出读取操作所需的读取电流。存储器件是包含相变材料的相变存储器件。半导体存储器件在读取操作中补偿漏电流，并将泄漏补偿电流提供给所选择的位线，从而抑制由漏电流引起的误操作发生。

8. 发明申请

US20060221679A1 Method of programming memory cell array 有权
标题翻译：编程存储单元阵列的方法
公开(公告)号：US20060221679A1
公开(公告)日：2006-10-05
申请号：US11315129
申请日：2005-12-23
申请人： Sang-beom Kang , Du-eung Kim , Baek-hyung Cho , Hye-jin Kim
发明人： Sang-beom Kang , Du-eung Kim , Baek-hyung Cho , Hye-jin Kim
IPC分类号： G11C11/00
CPC分类号： G11C13/0004 , G11C13/0069 , G11C2013/0078 , G11C2013/0092 , G11C2213/79
摘要： A method of programming a memory array including a plurality of memory cells is provided. The memory cells may include phase-change memory elements. In one aspect, the method includes applying in succession first through nth current pulses to each of the memory cells to be programmed to a first state (e.g., a crystalline state), where a current amplitude of the first through nth current pulses decreases with each successive pulse, and where a pulse duration of the first through nth current pulses increases with each successive pulse.
摘要翻译：提供了一种编程包括多个存储单元的存储器阵列的方法。存储器单元可以包括相变存储元件。在一个方面，所述方法包括首先连续地将每个存储单元连续施加到要编程到第一状态（例如，结晶状态）的第n个/ 第一至第n个电流脉冲随着每个连续脉冲而减小，并且其中第一至第n个电流脉冲的脉冲持续时间随每个连续脉冲而增加。

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