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1. 发明申请

WO2009112510A1 QUANTUM-DOT DEVICE AND POSITION-CONTROLLED QUANTUM-DOT-FABRICATION METHOD 审中-公开
标题翻译：量子装置和位置控制量子制造方法
公开(公告)号：WO2009112510A1
公开(公告)日：2009-09-17
申请号：PCT/EP2009/052840
申请日：2009-03-11
申请人： NXP B.V. , ST MICROELECTRONICS (CROLLES 2) SAS , BIDAL, Gregory , BOEUF, Frederic , LOUBET, Nicolas
发明人： BIDAL, Gregory , BOEUF, Frederic , LOUBET, Nicolas
IPC分类号： H01L29/06
CPC分类号： H01L29/127 , B82Y10/00 , H01L29/66439 , H01L29/7613
摘要： The present invention relates to a method for position-controlled fabrication of a semiconductor quantum dot, the method comprising: providing a substrate (102) of a substrate material; depositing a sacrificial layer (108) of a sacrificial material; depositing an active layer (110) of a semiconductive active material on the sacrificial layer, wherein the substrate, sacrificial and active materials are chosen such that the sacrificial layer is selectively removable with respect to the substrate and the active layer, depositing and patterning a mask layer on the active layer so as to define desired quantum-dot positions in lateral directions, fabricating a lateral access to the sacrificial layer in regions underneath the patterned mask layer; selectively removing, with respect to the substrate and the active layer, the sacrificial layer from underneath the active layer at least under the patterned mask layer; and etching the active layer under the patterned mask layer from underneath the active layer so as to assume a desired quantum-dot shape.
摘要翻译：本发明涉及半导体量子点的位置控制制造方法，该方法包括：提供衬底材料的衬底（102）; 沉积牺牲材料的牺牲层（108）; 在所述牺牲层上沉积半导体活性材料的有源层（110），其中所述衬底，牺牲层和活性材料被选择为使得所述牺牲层相对于所述衬底和所述有源层选择性地可移除，沉积和图案化掩模层，以便在横向方向上限定期望的量子点位置，在图案化掩模层下面的区域中制造对牺牲层的横向访问; 至少在所述图案化掩模层下方，相对于所述衬底和所述有源层选择性地从所述有源层下方去除所述牺牲层; 并且在有源层下方蚀刻图案化掩模层下面的有源层，以便呈现期望的量子点形状。

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