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1. 发明申请

WO2008063985A3 A POINT DEFECT ENGINEERED SI LIGHT-EMITTING DIODE AT 1.218 µM 审中-公开
标题翻译：点故障工程发光二极管1.218μM
公开(公告)号：WO2008063985A3
公开(公告)日：2008-08-21
申请号：PCT/US2007084494
申请日：2007-11-13
申请人： HARVARD COLLEGE , BAO JIMING , TABBAL MALEK , AZIZ MICHAEL J , KIM TAEGON , CHARNVANICHBORIKARN SUPAKIT , WILLIAMS JAMES S , CAPASSO FEDERICO
发明人： BAO JIMING , TABBAL MALEK , AZIZ MICHAEL J , KIM TAEGON , CHARNVANICHBORIKARN SUPAKIT , WILLIAMS JAMES S , CAPASSO FEDERICO
IPC分类号： H01L27/15 , H01L33/34
CPC分类号： H01L33/34
摘要： A light-emitting device (LED) includes a first semiconductor layer comprising of n-type dope materials. A second semiconductor layer includes p-type dope materials. An active region is positioned between the first and second semiconductor layers. The active region includes Si self-interstitials used in producing electroluminescence having emissions at wavelengths approximately 1.218 µm.
摘要翻译：发光器件（LED）包括由n型掺杂材料构成的第一半导体层。第二半导体层包括p型掺杂材料。有源区位于第一和第二半导体层之间。有源区包括用于制造具有大约1.218μm波长的发射的电致发光的Si自间隙。

2. 发明申请

WO2008018923A2 FABRICATION OF ISOLATED NANOSTRUCTURES AND/OR ARRAYS OF NANOSTRUCTURES 审中-公开
标题翻译：分离的纳米结构和/或纳米结构阵列的制造
公开(公告)号：WO2008018923A2
公开(公告)日：2008-02-14
申请号：PCT/US2007/007101
申请日：2007-03-22
申请人： PRESIDENT AND FELLOWS OF HARVARD COLLEGE , XU, Qiaobing , BAO, Jiming , CAPASSO, Federico , WHITESIDES, George, M.
发明人： XU, Qiaobing , BAO, Jiming , CAPASSO, Federico , WHITESIDES, George, M.
CPC分类号： B81C1/00031 , B08B17/065 , B82Y20/00 , B82Y30/00 , G01N21/658 , G02B2207/101
摘要： Methods for fabricating nanostructures and articles associated therewith are described. In some embodiments, an isolated nanostructure (e.g., a metal nanowire) or an array of nanostructures can be fabricated by depositing a material (e.g., a metal) on a surface having a plurality of protrusions or indentations. At least a portion of the deposited material may be embedded in an encapsulating material, and the encapsulating material can be cut, for instance, to form a thin slice that includes the deposited material at least partially embedded therein. In some instances, the slice can be positioned on a surface in a desired arrangement. The encapsulating material can be removed from the surface to form one or more isolated nanostructures of the deposited material. Advantageously, dimensions of the nanostructures can be controlled to, e.g., 15 run, to form nanostructures having a variety of shapes and geometries (e.g., wires, rings, and cylinders). Nanostructures can also be formed in a variety of materials, including metals, ceramics, and polymers. In addition, nanostructures can also be fabricated over large areas (e.g., greater than 1 mm 2 ). In some cases, these nanostructures are positioned in association with other components, e.g., to form a functional component of a device.
摘要翻译：描述了用于制造纳米结构和与其相关的制品的方法。在一些实施例中，分离的纳米结构（例如金属纳米线）或纳米结构阵列可以通过在具有多个突起或凹陷的表面上沉积材料（例如金属）来制造。至少一部分沉积材料可以嵌入封装材料中，并且可以切割封装材料，例如以形成包括至少部分嵌入其中的沉积材料的薄片。在一些情况下，切片可以以期望的布置定位在表面上。包封材料可从表面去除以形成沉积材料的一个或多个分离的纳米结构。有利地，可以将纳米结构的尺寸控制为例如15nm，以形成具有各种形状和几何形状（例如线材，环和圆柱体）的纳米结构。纳米结构也可以用各种材料形成，包括金属，陶瓷和聚合物。另外，纳米结构也可以在大面积上制造（例如，大于1mm 2）。在一些情况下，这些纳米结构与其他组分相关联地定位，例如以形成装置的功能组分。

3. 发明申请

WO2008018923A3 FABRICATION OF ISOLATED NANOSTRUCTURES AND/OR ARRAYS OF NANOSTRUCTURES 审中-公开
标题翻译：隔离纳米结构的制造和/或纳米结构的阵列
公开(公告)号：WO2008018923A3
公开(公告)日：2008-07-10
申请号：PCT/US2007007101
申请日：2007-03-22
申请人： HARVARD COLLEGE , XU QIAOBING , BAO JIMING , CAPASSO FEDERICO , WHITESIDES GEORGE M
发明人： XU QIAOBING , BAO JIMING , CAPASSO FEDERICO , WHITESIDES GEORGE M
IPC分类号： G02B5/18
CPC分类号： B81C1/00031 , B08B17/065 , B82Y20/00 , B82Y30/00 , G01N21/658 , G02B2207/101
摘要： Methods for fabricating nanostructures and articles associated therewith are described. In some embodiments, an isolated nanostructure (e.g., a metal nanowire) or an array of nanostructures can be fabricated by depositing a material (e.g., a metal) on a surface having a plurality of protrusions or indentations. At least a portion of the deposited material may be embedded in an encapsulating material, and the encapsulating material can be cut, for instance, to form a thin slice that includes the deposited material at least partially embedded therein. In some instances, the slice can be positioned on a surface in a desired arrangement. The encapsulating material can be removed from the surface to form one or more isolated nanostructures of the deposited material. Advantageously, dimensions of the nanostructures can be controlled to, e.g., 15 run, to form nanostructures having a variety of shapes and geometries (e.g., wires, rings, and cylinders). Nanostructures can also be formed in a variety of materials, including metals, ceramics, and polymers. In addition, nanostructures can also be fabricated over large areas (e.g., greater than 1 mm 2 ). In some cases, these nanostructures are positioned in association with other components, e.g., to form a functional component of a device.
摘要翻译：描述了制造与其相关的纳米结构和制品的方法。在一些实施方案中，可以通过在具有多个突起或凹陷的表面上沉积材料（例如金属）来制造分离的纳米结构（例如，金属纳米线）或纳米结构阵列。沉积材料的至少一部分可以嵌入到封装材料中，并且可以切割封装材料，例如，以形成薄片，其包括至少部分地嵌入其中的沉积材料。在一些情况下，切片可以以期望的布置位于表面上。封装材料可以从表面去除以形成沉积材料的一个或多个分离的纳米结构。有利地，纳米结构的尺寸可以被控制为例如15次，以形成具有各种形状和几何形状（例如，线，环和圆柱体）的纳米结构。纳米结构也可以以各种材料形成，包括金属，陶瓷和聚合物。此外，纳米结构也可以在大面积上制造（例如，大于1mm 2）。在一些情况下，这些纳米结构与其它组分相关联地定位，例如以形成器件的功能组件。

4. 发明申请

WO2008063985A2 A POINT DEFECT ENGINEERED SI LIGHT-EMITTING DIODE AT 1.218 μM 审中-公开
标题翻译：点缺陷工程师SI发光二极管1.218μM
公开(公告)号：WO2008063985A2
公开(公告)日：2008-05-29
申请号：PCT/US2007/084494
申请日：2007-11-13
申请人： PRESIDENT AND FELLOWS OF HARVARD COLLEGE , BAO, Jiming , TABBAL, Malek , AZIZ, Michael, J. , KIM, Taegon , CHARNVANICHBORIKARN, Supakit , WILLIAMS, James, S. , CAPASSO, Federico
发明人： BAO, Jiming , TABBAL, Malek , AZIZ, Michael, J. , KIM, Taegon , CHARNVANICHBORIKARN, Supakit , WILLIAMS, James, S. , CAPASSO, Federico
IPC分类号： H01L33/00
CPC分类号： H01L33/34
摘要： A light-emitting device (LED) includes a first semiconductor layer comprising of n-type dope materials. A second semiconductor layer includes p-type dope materials. An active region is positioned between the first and second semiconductor layers. The active region includes Si self-interstitials used in producing electroluminescence having emissions at wavelengths approximately 1.218 μm.
摘要翻译：发光器件（LED）包括由n-型掺杂材料构成的第一半导体层。第二半导体层包括p型掺杂材料。有源区位于第一和第二半导体层之间。有源区包括用于产生具有大约1.218μm波长发射的电致发光的Si自填隙。

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