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1. 发明申请

WO2012018449A2 DUAL PLASMA VOLUME PROCESSING APPARATUS FOR NEUTRAL/ION FLUX CONTROL 审中-公开
标题翻译：用于中性/离子流量控制的双等离子体处理装置
公开(公告)号：WO2012018449A2
公开(公告)日：2012-02-09
申请号：PCT/US2011/041524
申请日：2011-06-22
申请人： LAM RESEARCH CORPORATION , DHINDSA, Rajinder , MARAKHATNOV, Alexei , BAILEY, Andrew, D. III
发明人： DHINDSA, Rajinder , MARAKHATNOV, Alexei , BAILEY, Andrew, D. III
IPC分类号： H01L21/205
CPC分类号： H01J37/32449 , H01J37/32091 , H01J37/32697 , H01J37/32715 , H01J37/32834 , H01L21/67069 , H01L21/67259 , H01L21/6831 , H01L22/26
摘要： A semiconductor wafer processing apparatus includes a first electrode exposed to a first plasma generation volume, a second electrode exposed to a second plasma generation volume, and a gas distribution unit disposed between the first and second plasma generation volumes. The first electrode is defined to transmit radio frequency (RF) power to the first plasma generation volume, and distribute a first plasma process gas to the first plasma generation volume. The second electrode is defined to transmit RF power to the second plasma generation volume, and hold a substrate in exposure to the second plasma generation volume. The gas distribution unit includes an arrangement of through-holes defined to fluidly connect the first plasma generation volume to the second plasma generation volume. The gas distribution unit also includes an arrangement of gas supply ports defined to distribute a second plasma process gas to the second plasma generation volume.
摘要翻译：半导体晶片处理设备包括暴露于第一等离子体产生体积的第一电极，暴露于第二等离子体产生体积的第二电极以及布置在第一和第二等离子体产生体积之间的气体分配单元。第一电极被定义为将射频（RF）功率发射到第一等离子体产生体积，并且将第一等离子体过程气体分配到第一等离子体产生体积。第二电极被限定为将RF功率传输到第二等离子体产生体积，并且保持衬底暴露于第二等离子体产生体积。气体分配单元包括被限定为将第一等离子体生成体积流体连接到第二等离子体生成体积的通孔的布置。气体分配单元还包括气体供应端口的布置，其被限定为将第二等离子体处理气体分配到第二等离子体生成体积。

2. 发明申请

WO2012018448A2 PLASMA PROCESSING CHAMBER WITH DUAL AXIAL GAS INJECTION AND EXHAUST 审中-公开
标题翻译：具有双轴向气体注射和排气的等离子体加工室
公开(公告)号：WO2012018448A2
公开(公告)日：2012-02-09
申请号：PCT/US2011/041522
申请日：2011-06-22
申请人： LAM RESEARCH CORPORATION , DHINDSA, Rajinder , MARAKHATNOV, Alexei , BAILEY, Andrew, D. III
发明人： DHINDSA, Rajinder , MARAKHATNOV, Alexei , BAILEY, Andrew, D. III
IPC分类号： H01L21/205 , H01L21/3065
CPC分类号： H01L21/3065 , C23C16/4412 , C23C16/45565 , C23C16/45574 , C23C16/45576 , C23C16/50 , H01J37/32091 , H01J37/32449 , H01J37/32834 , H01L21/31
摘要： An electrode is exposed to a plasma generation volume and is defined to transmit radiofrequency power to the plasma generation volume, and includes an upper surface for holding a substrate in exposure to the plasma generation volume. A gas distribution unit is disposed above the plasma generation volume and in a substantially parallel orientation to the electrode. The gas distribution unit includes an arrangement of gas supply ports for directing an input flow of a plasma process gas into the plasma generation volume in a direction substantially perpendicular to the upper surface of the electrode. The gas distribution unit also includes an arrangement of through-holes that each extend through the gas distribution unit to fluidly connect the plasma generation volume to an exhaust region. Each of the through-holes directs an exhaust flow from the plasma generation volume in a direction substantially perpendicular to the upper surface of the electrode.
摘要翻译：电极暴露于等离子体产生体积，并且被定义为将射频功率传递到等离子体产生体积，并且包括用于保持衬底暴露于等离子体产生体积的上表面。气体分布单元设置在等离子体产生体积之上并且基本上平行于电极的取向。气体分配单元包括用于将等离子体处理气体的输入流在基本上垂直于电极的上表面的方向引导到等离子体产生体积中的气体供给端口的布置。气体分配单元还包括通孔的布置，其各自延伸穿过气体分配单元以将等离子体产生体积流体连接到排气区域。每个通孔在基本上垂直于电极的上表面的方向上引导来自等离子体产生体积的排气流。

3. 发明申请

WO2007038580A2 APPARATUS AND METHODS TO REMOVE FILMS ON BEVEL EDGE AND BACKSIDE OF WAFER 审中-公开
标题翻译：在晶圆边缘和背面去除膜的装置和方法
公开(公告)号：WO2007038580A2
公开(公告)日：2007-04-05
申请号：PCT/US2006/037648
申请日：2006-09-26
申请人： LAM RESEARCH CORPORATION , KIM, Yunsang , BAILEY, Andrew D. III
发明人： KIM, Yunsang , BAILEY, Andrew D. III
CPC分类号： H01J37/32532 , H01J37/32357 , H01J37/3244 , H01J37/32862
摘要： Improved mechanisms of removal of etch byproducts, dielectric films and metal films near the substrate bevel edge, and etch byproducts on substrate backside and chamber interior is provided to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. An exemplary plasma etch processing chamber configured to clean a bevel edge of a substrate is provided. The chamber includes a bottom edge electrode surrounding a substrate support in the plasma processing chamber, wherein the substrate support is configured to receive the substrate and the bottom edge electrode and the substrate support are electrically isolated from each other by a bottom dielectric ring. The chamber also includes a top edge electrode surrounding a gas distribution plate opposing the substrate support, wherein the top edge electrode and the gas distribution plate are electrically isolated from each other by a top dielectric ring, and the top edge electrode and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate.
摘要翻译：提供了去除蚀刻副产物，介电膜和金属膜靠近衬底斜面边缘以及在衬底背面和腔室内部蚀刻副产物的改进机制，以避免聚合物副产物和沉积膜的积聚，并且提高工艺产量。提供了构造成清洁衬底的斜面边缘的示例性等离子体蚀刻处理室。腔室包括在等离子体处理腔室中围绕基板支撑件的底部边缘电极，其中基板支撑件被配置为接收基板，并且底部边缘电极和基板支撑件通过底部电介质环彼此电隔离。腔室还包括围绕与基板支撑件相对的气体分配板的顶部边缘电极，其中顶部边缘电极和气体分配板通过顶部电介质环彼此电隔离，并且顶部边缘电极和底部边缘电极被配置为产生清洁等离子体以清洁衬底的斜面边缘。

4. 发明申请

WO2004030084A2 METHOD FOR QUANTIFYING UNIFORMITY PATTERNS AND INCLUSION OF EXPERT KNOWLEDGE FOR TOOL DEVELOPMENT AND CONTROL 审中-公开
标题翻译：定量统一模式的方法和专家知识包含工具开发与控制
公开(公告)号：WO2004030084A2
公开(公告)日：2004-04-08
申请号：PCT/US2003/030610
申请日：2003-09-24
申请人： LAM RESEARCH CORPORATION , BAILEY, Andrew, D. , III , YADAV, Puneet , MISRA, Pratik
发明人： BAILEY, Andrew, D. , III , YADAV, Puneet , MISRA, Pratik
IPC分类号： H01L21/66
CPC分类号： H01L22/20
摘要： A system and method of for determining multiple uniformity metrics of a semiconductor wafer manufacturing process includes collecting a quantity across each one of a group of semiconductor wafers. The collected quantity data is scaled and a principal component analysis (PCA) is performed on the collected, scaled quantity data to produce a first set of metrics for the first group of semiconductor wafers. The first set of metrics including a first loads matrix and a first scores matrix.
摘要翻译：一种用于确定半导体晶片制造工艺的多个均匀性度量的系统和方法包括收集跨越一组半导体晶片中的每一个的量。收集的数量数据被缩放，并且对所收集的缩放量数据执行主分量分析（PCA），以产生第一组半导体晶片的第一组度量。第一组度量包括第一加载矩阵和第一分数矩阵。

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