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1. 发明申请

WO2008010672A1 A CHEMICAL REACTOR INCLUDING HEAT EXCHANGERS 审中-公开
标题翻译：化学反应器，包括热交换器
公开(公告)号：WO2008010672A1
公开(公告)日：2008-01-24
申请号：PCT/KR2007/003483
申请日：2007-07-19
申请人： LG CHEM, LTD. , CHO, Jun-Yeon , CHOE, Jae-Hoon , PARK, Kwang-Cheon , KWAK, Gyea-Young , RHEE, Chang-Houn , BAE, Sun-Hyuk , CHOI, Jung-Uk , SONG, Kwang-Ho
发明人： CHO, Jun-Yeon , CHOE, Jae-Hoon , PARK, Kwang-Cheon , KWAK, Gyea-Young , RHEE, Chang-Houn , BAE, Sun-Hyuk , CHOI, Jung-Uk , SONG, Kwang-Ho
IPC分类号： C01B3/38
CPC分类号： C01B3/34 , C01B2203/0216 , C01B2203/0233 , C01B2203/0811 , C01B2203/1041 , C01B2203/1058 , C01B2203/1064 , C01B2203/107 , C01B2203/1076 , C01B2203/1217 , C01B2203/1235 , Y02P20/124
摘要： The present invention discloses to a chemical reactor with high heat efficiency and small volume, the chemical reaction of the present invention comprises a first unit for performing heat exchange of exothermic reaction products with exothermic reaction raw material fed for exothermic reaction; a second unit including a plate assembly for exothermic reactions and a plate assembly for endothermic reactions; and a third unit for performing heat exchange of endothermic reaction products with endothermic reaction raw material fed for endothermic reactions, the exothermic reaction raw material discharged from the first unit is fed into the plate assembly for exothermic reactions in the second unit and used in the exothermic reactions, the exothermic reaction products are fed into the first unit to pre-heat the exothermic reaction raw material, the endothermic reaction raw material discharged from the third unit is fed into the plate assembly for endothermic reactions in the second unit and used in the endothermic reactions, the endothermic reaction products are fed into the third unit to pre-heat the endothermic reaction raw material, and the first unit, the second unit and the third unit are laminately disposed.
摘要翻译：本发明公开了一种热效率高，体积小的化学反应器，本发明的化学反应包括用于进行放热反应的放热反应原料与放热反应产物进行热交换的第一单元; 包括用于放热反应的板组件和用于吸热反应的板组件的第二单元; 以及第三单元，用于进行用于吸热反应的吸热反应原料的吸热反应产物的热交换，从第一单元排出的放热反应原料在第二单元中进料到用于放热反应的板组件中，并用于放热反应中，将放热反应产物进料到第一单元中以预热放热反应原料，将从第三单元排出的吸热反应原料进料到第二单元中用于吸热反应的板组件中并用于吸热反应中，将吸热反应产物进料到第三单元中以预热吸热反应原料，并且第一单元，第二单元和第三单元层叠。

2. 发明申请

WO2013002539A2 APPARATUS AND METHOD FOR GROWING SILICON CARBIDE SINGLE CRYSTAL 审中-公开
标题翻译：用于生产碳化硅单晶的装置和方法
公开(公告)号：WO2013002539A2
公开(公告)日：2013-01-03
申请号：PCT/KR2012/005045
申请日：2012-06-26
申请人： SK INNOVATION CO.,LTD. , KIM, Young Shol , BAE, Sun Hyuk , HONG, Sung Wan
发明人： KIM, Young Shol , BAE, Sun Hyuk , HONG, Sung Wan
CPC分类号： C30B9/06 , C30B29/36
摘要： Provided are an apparatus and a method for growing a silicon carbide single crystal by solution growth. The apparatus for growing a silicon carbide single crystal includes: a reaction chamber that is in a predetermined pressure state; a crucible that is provided in the reaction chamber, includes silicon (Si) or silicon carbide (SiC) powders or a mixture thereof charged therein, includes a silicon carbide seed provided at an upper portion of an inner side thereof and growing a silicon carbide and a seed connection bar extended from the silicon carbide seed, and is made of a graphite material; and a heating element that heats the crucible. An inner portion of the crucible is provided with at least one protrusion jaws, at least some or all of which are formed along an inner peripheral surface of the crucible, wherein the protrusion jaw is made of the graphite material.
摘要翻译：提供了一种通过溶液生长生长碳化硅单晶的装置和方法。用于生长碳化硅单晶的装置包括：处于预定压力状态的反应室; 设置在反应室中的坩埚包括硅（Si）或碳化硅（SiC）粉末或其中填充的混合物，包括在其内侧的上部设置的碳化硅晶粒并生长碳化硅，从碳化硅种子延伸的种子连接杆，并由石墨材料制成; 以及加热坩埚的加热元件。坩埚的内部具有至少一个突出爪，其至少一部分或全部沿着坩埚的内周面形成，其中突出爪由石墨材料制成。

3. 发明申请

WO2011136451A1 METHOD OF MANUFACTURING HIGH QUALITY LUBE BASE OIL USING UNCONVERTED OIL 审中-公开
标题翻译：使用无油油制造高品质润滑油基础油的方法
公开(公告)号：WO2011136451A1
公开(公告)日：2011-11-03
申请号：PCT/KR2010/007825
申请日：2010-11-08
申请人： SK INNOVATION CO., LTD. , NOH, Kyung Seok , KIM, Yong Woon , KIM, Gyung Rok , RYU, Jae Wook , BAE, Sun Hyuk , JANG, Tae Young , CHOI, Sun , OH, Seung Hoon
发明人： NOH, Kyung Seok , KIM, Yong Woon , KIM, Gyung Rok , RYU, Jae Wook , BAE, Sun Hyuk , JANG, Tae Young , CHOI, Sun , OH, Seung Hoon
IPC分类号： C10M101/02 , C10M109/00 , C10G67/14 , C10M171/00
CPC分类号： C10M101/02 , C10G45/58 , C10G65/12 , C10G2300/1037 , C10G2300/202 , C10G2300/302 , C10G2300/4081 , C10G2300/42 , C10G2300/70 , C10G2400/10 , C10M2203/1006 , C10M2203/1025 , C10N2230/02 , C10N2270/00 , C10N2220/022
摘要： Disclosed is a method of manufacturing high quality lube base oil (Group III) from unconverted oil having various properties obtained in a variety of hydrocrackers using improved catalytic dewaxing and hydrofinishing, the method including producing unconverted oil of at least one kind in the same or different hydrocrackers; subjecting the unconverted oil to vacuum distillation; supplying all or part of the distillate fractions to a catalytic dewaxing reactor; supplying the dewaxed oil fraction to a hydrofinishing reactor; and stripping the hydrofinished light oil fraction, wherein make-up hydrogen is supplied upstream of the hydrofinishing reactor to increase hydrogen partial pressure, thereby enabling high quality base oil to be manufactured at high yield under optimal process conditions using unconverted oil produced by hydrocracking under various conditions.
摘要翻译：公开了一种使用改进的催化脱蜡和加氢精制技术在各种加氢裂化器中获得的具有各种性能的未转化油的高质量润滑油基础油（组III）的方法，该方法包括生产至少一种相同或不同的未转化油加氢裂化装置; 对未转化的油进行真空蒸馏; 将全部或部分馏出物馏分供应到催化脱蜡反应器中; 将脱蜡油馏分供给加氢精制反应器; 并且对加氢精制轻馏分进行汽提，其中在加氢精制反应器的上游供应氢气以提高氢分压，由此可以在最佳工艺条件下以高产率制造高质量的基础油，使用在各种各样的加氢裂化产生的未转化油条件。

4. 发明申请

WO2013002540A3 APPARATUS AND METHOD FOR GROWING SILICON CARBIDE SINGLE CRYSTAL 审中-公开
标题翻译：用于生长碳化硅单晶的装置和方法
公开(公告)号：WO2013002540A3
公开(公告)日：2013-04-11
申请号：PCT/KR2012005048
申请日：2012-06-26
申请人： SK INNOVATION CO LTD , KIM YOUNG SHOL , BAE SUN HYUK , HONG SUNG WAN
发明人： KIM YOUNG SHOL , BAE SUN HYUK , HONG SUNG WAN
IPC分类号： C30B15/00 , C30B15/10 , C30B29/36 , H01L33/00
CPC分类号： C30B15/02 , C30B17/00 , C30B29/36
摘要： Provided are an apparatus and a method for growing a silicon carbide single crystal by solution growth. The apparatus for growing a silicon carbide single crystal includes: a reaction chamber that is in a predetermined pressure state; a crucible that is provided in the reaction chamber, includes silicon (Si) or silicon carbide (SiC) powders or a mixture thereof charged therein, includes a silicon carbide seed provided at an upper portion of an inner side thereof and growing a silicon carbide and a seed connection bar extended from the silicon carbide seed, and is made of a graphite material; and a heating element that heats the crucible. An inner portion of the crucible is provided with a cylindrical assisting tool having a plurality of pores formed at least at a side thereof and made of the graphite material.
摘要翻译：提供了一种通过溶液生长生长碳化硅单晶的设备和方法。用于生长碳化硅单晶的设备包括：处于预定压力状态的反应室; 设置在反应室中的坩埚包括填充在其中的硅（Si）或碳化硅（SiC）粉末或其混合物，包括设置在其内侧上部的碳化硅籽晶并生长碳化硅，以及从碳化硅种子延伸并由石墨材料制成的种子连接棒; 和加热坩埚的加热元件。坩埚的内部设置有圆柱形辅助工具，该辅助工具在其至少一侧形成有多个由石墨材料制成的孔。

5. 发明申请

WO2013002540A2 APPARATUS AND METHOD FOR GROWING SILICON CARBIDE SINGLE CRYSTAL 审中-公开
标题翻译：用于生产碳化硅单晶的装置和方法
公开(公告)号：WO2013002540A2
公开(公告)日：2013-01-03
申请号：PCT/KR2012/005048
申请日：2012-06-26
申请人： SK INNOVATION CO.,LTD. , KIM, Young Shol , BAE, Sun Hyuk , HONG, Sung Wan
发明人： KIM, Young Shol , BAE, Sun Hyuk , HONG, Sung Wan
CPC分类号： C30B15/02 , C30B17/00 , C30B29/36
摘要： Provided are an apparatus and a method for growing a silicon carbide single crystal by solution growth. The apparatus for growing a silicon carbide single crystal includes: a reaction chamber that is in a predetermined pressure state; a crucible that is provided in the reaction chamber, includes silicon (Si) or silicon carbide (SiC) powders or a mixture thereof charged therein, includes a silicon carbide seed provided at an upper portion of an inner side thereof and growing a silicon carbide and a seed connection bar extended from the silicon carbide seed, and is made of a graphite material; and a heating element that heats the crucible. An inner portion of the crucible is provided with a cylindrical assisting tool having a plurality of pores formed at least at a side thereof and made of the graphite material.
摘要翻译：提供了一种通过溶液生长生长碳化硅单晶的装置和方法。用于生长碳化硅单晶的装置包括：处于预定压力状态的反应室; 设置在反应室中的坩埚包括硅（Si）或碳化硅（SiC）粉末或其中填充的混合物，包括在其内侧的上部设置的碳化硅晶粒并生长碳化硅，从碳化硅种子延伸的种子连接杆，并由石墨材料制成; 以及加热坩埚的加热元件。坩埚的内部设置有圆柱形辅助工具，其具有至少在其一侧形成并由石墨材料制成的多个孔。

6. 发明申请

WO2007139336A1 MICRO CHANNEL REACTOR SYSTEM 审中-公开
标题翻译：微通道反应器系统
公开(公告)号：WO2007139336A1
公开(公告)日：2007-12-06
申请号：PCT/KR2007/002601
申请日：2007-05-29
申请人： LG CHEM, LTD. , CHO, Jun-Yeon , CHOI, Jung-Uk , CHOE, Jae-Hoon , PARK, Kwang-Cheon , RHEE, Chang-Houn , BAE, Sun-Hyuk , SONG, Kwang-Ho
发明人： CHO, Jun-Yeon , CHOI, Jung-Uk , CHOE, Jae-Hoon , PARK, Kwang-Cheon , RHEE, Chang-Houn , BAE, Sun-Hyuk , SONG, Kwang-Ho
IPC分类号： C01B3/38
CPC分类号： C01B3/16 , B01J19/0093 , B01J2219/00783 , B01J2219/00804 , B01J2219/00835 , B01J2219/00873 , C01B2203/0283 , C01B2203/066 , C01B2203/0894 , C01B2203/1035
摘要： The present invention discloses to a channel reactor system having a first channel plate assembly in which an exothermic reaction is performed and a second channel plate assembly provided for heat-exchanging and constituted integrally with the first channel plate assembly so as to remove effectively heat, the channel reactor system comprising at least two channel units into which reaction gas and cooling fluid are separately introduced, each channel unit comprising a reaction channel plate assembly into which reaction gas is introduced and a heat-exchanging channel plate assembly into which cooling fluid is introduced; and at least one intermediate plate disposed between the upper and lower channel units, the intermediate plate supplying reaction gas and cooling fluid inflowed from the upper channel unit with new reactant and cooling fluid and supplying reaction gas and cooling fluid to the reaction channel plate assembly and the heat-exchanging channel plate assembly of the lower channel unit, respectively.
摘要翻译：本发明公开了一种通道反应器系统，其具有其中进行放热反应的第一通道板组件和设置用于热交换并与第一通道板组件一体构成的第二通道板组件，以便有效地除去热量，通道反应器系统包括至少两个通道单元，反应气体和冷却流体被单独引入到该通道单元中，每个通道单元包括反应通道板组件，反应气体被引入到其中;以及热交换通道板组件，其中引入冷却流体; 以及设置在上通道单元和下通道单元之间的至少一个中间板，中间板供应来自上通道单元的反应气体和冷却流体，其具有新的反应物和冷却流体，并将反应气体和冷却流体供应到反应通道板组件，下通道单元的热交换通道板组件。

7. 发明申请

WO2013002539A3 APPARATUS AND METHOD FOR GROWING SILICON CARBIDE SINGLE CRYSTAL 审中-公开
标题翻译：用于生长碳化硅单晶的装置和方法
公开(公告)号：WO2013002539A3
公开(公告)日：2013-03-14
申请号：PCT/KR2012005045
申请日：2012-06-26
申请人： SK INNOVATION CO LTD , KIM YOUNG SHOL , BAE SUN HYUK , HONG SUNG WAN
发明人： KIM YOUNG SHOL , BAE SUN HYUK , HONG SUNG WAN
IPC分类号： C30B29/36 , C30B11/00 , C30B23/00
CPC分类号： C30B9/06 , C30B29/36
摘要： Provided are an apparatus and a method for growing a silicon carbide single crystal by solution growth. The apparatus for growing a silicon carbide single crystal includes: a reaction chamber that is in a predetermined pressure state; a crucible that is provided in the reaction chamber, includes silicon (Si) or silicon carbide (SiC) powders or a mixture thereof charged therein, includes a silicon carbide seed provided at an upper portion of an inner side thereof and growing a silicon carbide and a seed connection bar extended from the silicon carbide seed, and is made of a graphite material; and a heating element that heats the crucible. An inner portion of the crucible is provided with at least one protrusion jaws, at least some or all of which are formed along an inner peripheral surface of the crucible, wherein the protrusion jaw is made of the graphite material.
摘要翻译：提供了一种通过溶液生长生长碳化硅单晶的设备和方法。用于生长碳化硅单晶的设备包括：处于预定压力状态的反应室; 设置在反应室中的坩埚包括填充在其中的硅（Si）或碳化硅（SiC）粉末或其混合物，包括设置在其内侧上部的碳化硅籽晶并生长碳化硅，以及从碳化硅种子延伸并由石墨材料制成的种子连接棒; 和加热坩埚的加热元件。坩埚的内部设置有至少一个突起颚，其中至少一些或全部沿坩埚的内周表面形成，其中突起颚由石墨材料制成。

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