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1. 发明申请

US20090268996A1 Bearing Device 有权
标题翻译：轴承装置
公开(公告)号：US20090268996A1
公开(公告)日：2009-10-29
申请号：US12227346
申请日：2007-05-10
申请人： Hiroshi Yamamoto , Motohide Sugihara , Atsushi Nagato
发明人： Hiroshi Yamamoto , Motohide Sugihara , Atsushi Nagato
IPC分类号： F16C33/10
CPC分类号： F16C17/02 , F16C33/1065 , F16C2240/30 , F16C2240/90 , F16C2350/26
摘要： In a bush (10) which relatively-rotatably supports a journal shaft (1) around its central axis by housing the journal shaft (1) in a formed bearing hole (11), the bush 10 includes an oil supply groove (16) formed spirally to supply lube oil to an inner surface of the bearing hole (11) which contacts to the journal shaft (1) when the journal shaft relatively rotates. A ratio of an area of the oil supply groove (16) to the inner surface area of the bearing hole (11) is equal to or less than 30%. A product of a distance in the central axis direction and a distance in the circumferential direction of the journal shaft (1) between the oil supply groove (16) in next to each other on the inner surface of the bearing hole (11) is within 50 to 300 mm2 range.
摘要翻译：在通过将轴颈轴（1）容纳在形成的轴承孔（11）中而相对地可旋转地支撑轴颈轴（1）的衬套（10）中，衬套10包括形成的供油槽（16）螺旋地将润滑油供给到当轴颈轴相对旋转时与轴颈轴（1）接触的轴承孔（11）的内表面。供油槽（16）的面积与轴承孔（11）的内表面积的比例等于或小于30％。在轴承孔（11）的内表面上彼此相邻的供油槽（16）之间的轴心方向上的距离和轴颈轴（1）的周向距离的乘积在内 50至300 mm2范围。

2. 发明授权

US08104966B2 Bearing device 有权
标题翻译：轴承装置
公开(公告)号：US08104966B2
公开(公告)日：2012-01-31
申请号：US12227346
申请日：2007-05-10
申请人： Hiroshi Yamamoto , Motohide Sugihara , Atsushi Nagato
发明人： Hiroshi Yamamoto , Motohide Sugihara , Atsushi Nagato
IPC分类号： F16C33/10
CPC分类号： F16C17/02 , F16C33/1065 , F16C2240/30 , F16C2240/90 , F16C2350/26
摘要： In a bush (10) which relatively-rotatably supports a journal shaft (1) around its central axis by housing the journal shaft (1) in a formed bearing hole (11), the bush 10 includes an oil supply groove (16) formed spirally to supply lube oil to an inner surface of the bearing hole (11) which contacts to the journal shaft (1) when the journal shaft relatively rotates. A ratio of an area of the oil supply groove (16) to the inner surface area of the bearing hole (11) is equal to or less than 30%. A product of a distance in the central axis direction and a distance in the circumferential direction of the journal shaft (1) between the oil supply groove (16) in next to each other on the inner surface of the bearing hole (11) is within 50 to 300 mm2 range.
摘要翻译：在通过将轴颈轴（1）容纳在形成的轴承孔（11）中而相对地可旋转地支撑轴颈轴（1）的衬套（10）中，衬套10包括形成的供油槽（16）螺旋地将润滑油供给到当轴颈轴相对旋转时与轴颈轴（1）接触的轴承孔（11）的内表面。供油槽（16）的面积与轴承孔（11）的内表面积的比例等于或小于30％。在轴承孔（11）的内表面上彼此相邻的供油槽（16）之间的轴心方向上的距离和轴颈轴（1）的周向距离的乘积在内 50至300 mm2范围。

3. 发明授权

US06334494B1 Control unit for hydraulic impact wrench 失效
标题翻译：液压冲击扳手控制单元
公开(公告)号：US06334494B1
公开(公告)日：2002-01-01
申请号：US09594373
申请日：2000-06-15
申请人： Atsushi Nagato
发明人： Atsushi Nagato
IPC分类号： B25D1500
CPC分类号： B25B21/02 , B25B23/1453
摘要： A pressure leading path in a impact type tool is branched halfway through a bypass passage for connecting a high pressure chamber H with a low pressure chamber (L). The branch includes a first fixed aperture leading to the high pressure chamber (H). The branch also includes a second fixed aperture leading to the low pressure chamber (H). The pressure leading path is connected to a primary side of a relief valve. An automatic shutoff mechanism is operated by hydraulic operating fluid relieved from the secondary side of relief valve. The automatic shutoff mechanism cuts off the air supply to the air motor driving the tool, and thus automatically shuts off the tool, when the pressure in the pressure leading path exceeds a predetermined value. The present invention permits control of pulsed torque with high precision in a simple construction.
摘要翻译：冲击式工具中的压力引导路径通过用于将高压室H与低压室（L）连接的旁通通道中途分支。分支包括通向高压室（H）的第一固定孔。分支还包括通向低压室（H）的第二固定孔。压力引导路径连接到安全阀的初级侧。自动关闭机构由从安全阀次级侧释放的液压工作液体操作。当压力引导路径中的压力超过预定值时，自动关闭机构切断驱动工具的气动马达的空气供应，从而自动关闭工具。本发明允许以简单的结构高精度地控制脉冲扭矩。

4. 发明申请

US20090031954A1 SUSCEPTOR AND APPARATUS FOR MANUFACTURING EPITAXIAL WAFER 审中-公开
标题翻译：用于制造外延波形的SUSICEPTOR和装置
公开(公告)号：US20090031954A1
公开(公告)日：2009-02-05
申请号：US12278650
申请日：2007-02-08
申请人： Kouichi Nishikido , Motonori Nakamura , Atsuhiko Hirosawa , Noboru Iida , Norihiko Sato , Atsushi Nagato , Toshiyuki Kamei
发明人： Kouichi Nishikido , Motonori Nakamura , Atsuhiko Hirosawa , Noboru Iida , Norihiko Sato , Atsushi Nagato , Toshiyuki Kamei
IPC分类号： C23C16/00
CPC分类号： H01L21/67115 , C23C16/4581 , C23C16/4585 , C30B25/12 , H01L21/68735
摘要： A susceptor capable of reducing unevenness in a film-thickness of an epitaxial film on an outer surface of a substrate wafer and a manufacturing apparatus of an epitaxial wafer are provided. The susceptor includes a wafer placement and a peripheral portion. The wafer placement is greater in size than the substrate wafer W and substantially disc-shaped. The peripheral portion is substantially in a ring-plate shape and includes: an inner circumference standing in a fashion surrounding a peripheral portion of the wafer placement; and an upper surface outwardly extending from an upper end of the inner circumference in parallel to the placement surface of the wafer placement. In the chemical vapor deposition control unit, an inner circumference has a curvature substantially similar to a curvature of the inner circumference of the peripheral portion, and the upper surface is leveled with the upper surface) of the peripheral portion. The chemical vapor deposition control unit is made of SiO2 which is less reactive with a reaction gas than a SiC film.
摘要翻译：提供一种能够减小衬底晶片的外表面上的外延膜的膜厚度和外延晶片的制造装置的基座。感受体包括晶片放置和周边部分。晶片放置的尺寸大于衬底晶片W并且基本上是圆盘形。周边部分基本上是环形的，并且包括：以围绕晶片放置的周边部分的方式站立的内圆周; 以及从内圆周的上端平行于晶片放置的放置表面向外延伸的上表面。在化学气相沉积控制单元中，内圆周具有与周边部分的内周的曲率大致相似的曲率，并且上表面与上表面平齐）。化学气相沉积控制单元由与SiC膜反应气反应性较低的SiO 2制成。

5. 发明申请

US20070281084A1 Apparatus and method for depositing layer on substrate 审中-公开
标题翻译：用于在衬底上沉积层的装置和方法
公开(公告)号：US20070281084A1
公开(公告)日：2007-12-06
申请号：US11806091
申请日：2007-05-30
申请人： Atsuhiko Hirosawa , Noboru Iida , Norihiko Sato , Atsushi Nagato , Toshiyuki Kamei , Kouichi Nishikido , Motonori Nakamura
发明人： Atsuhiko Hirosawa , Noboru Iida , Norihiko Sato , Atsushi Nagato , Toshiyuki Kamei , Kouichi Nishikido , Motonori Nakamura
IPC分类号： C23C16/00 , B05C11/00
CPC分类号： C23C16/45565 , C23C16/52
摘要： A reactant gas is supplied to a gas inlet port 40B of a reaction chamber 20A from a plurality of gas flow paths 36A. The number of gas flow paths 36A is five or more within a range of one side of the gas inlet port 40B divided in two at the center thereof. The pitch between adjacent gas flow paths 36A is 10 mm or more. A baffle 38 having a plurality of slit holes 38A is disposed upstream of the gas flow paths 36A. The gas flow rates of the respective gas flow paths 36A are adjusted by recurrent calculation using layer growth sensitivity data that defines the relation between the gas flow rates of the respective gas flow paths 36A.
摘要翻译：反应气体从多个气体流路36A供给到反应室20A的气体导入口40B。气体流路36A的数量在气体入口的一侧的范围内为5以上端口40B在其中心分为两个。相邻气体流路36A之间的间距为10mm以上。具有多个狭缝孔38A的挡板38设置在气体流路36A的上游。各气体流路36A的气体流量通过使用层生长敏感性数据的复数计算进行调整，该层生长敏感性数据定义了各气体流路36A的气体流量。

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