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    • 4. 发明申请
    • OUTER CODE PROTECTION FOR SOLID STATE MEMORY DEVICES
    • 固态存储器件的外部代码保护
    • US20110296272A1
    • 2011-12-01
    • US12790120
    • 2010-05-28
    • Bernardo RubAra PatapoutianArvind SridharanBruce D. Buch
    • Bernardo RubAra PatapoutianArvind SridharanBruce D. Buch
    • H03M13/29G06F11/10
    • G06F11/1012
    • Outer code words can span multiple data blocks, multiple die, or multiple chips of a memory device to protect against errors in the data stored in the blocks, die and/or chips. A solid state memory device is arranged in multiple data blocks, each block including an array of memory cells arranged in a plurality of pages. The data is encoded into inner code words and symbol-based outer code words. The inner code words and the symbol-based outer code words are stored in the memory cells of the multiple blocks. One or more inner code words are stored in each page of each block and one or more symbols of each outer code word are stored in at least one page of each block. The inner code words and the outer code words are read from the memory device and are used to correct the errors in the data.
    • 外码字可以跨越存储器设备的多个数据块,多个芯片或多个芯片,以防止存储在块,芯片和/或芯片中的数据中的错误。 固态存储器件被布置在多个数据块中,每个块包括以多页布置的存储器单元的阵列。 数据被编码成内码字和基于符号的外码字。 内码字和基于符号的外码字被存储在多个块的存储单元中。 一个或多个内部码字被存储在每个块的每个页面中,并且每个外部码字的一个或多个符号被存储在每个块的至少一个页面中。 内部码字和外部码字从存储器件读取并用于校正数据中的错误。
    • 9. 发明申请
    • Training Datasets for Memory Devices
    • 内存设备的训练数据集
    • US20130006896A1
    • 2013-01-03
    • US13170802
    • 2011-06-28
    • Ara PatapoutianArvind Sridharan
    • Ara PatapoutianArvind Sridharan
    • G06F15/18
    • G11C11/5642G06N20/00G11C16/3418
    • Methods and systems involve the use of training datasets to determine one or more reference voltages used to read data in a memory unit. Approaches for accessing a memory device having multiple memory units includes storing a training dataset comprising at least one of a known data pattern and a codeword capable of being decoded in a training dataset field of each memory unit of a memory device. One or more reference voltages are determined using the training dataset stored in the memory unit. After the reference voltages have been determined using the training dataset, these reference voltages are used to read other fields of the memory unit.
    • 方法和系统涉及使用训练数据集来确定用于读取存储器单元中的数据的一个或多个参考电压。 用于访问具有多个存储器单元的存储器件的方法包括存储训练数据集,训练数据集包括能够在存储器件的每个存储器单元的训练数据集域中能够解码的已知数据模式和码字中的至少一种。 使用存储在存储器单元中的训练数据集来确定一个或多个参考电压。 在使用训练数据集确定参考电压之后,这些参考电压用于读取存储器单元的其它场。