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1. 发明授权

US07030997B2 Characterizing aberrations in an imaging lens and applications to visual testing and integrated circuit mask analysis 失效
公开(公告)号：US07030997B2
公开(公告)日：2006-04-18
申请号：US10241242
申请日：2002-09-10
申请人： Andrew R. Neureuther , Kostas Adam , Garth C. Robins , Frank E. Gennari
发明人： Andrew R. Neureuther , Kostas Adam , Garth C. Robins , Frank E. Gennari
IPC分类号： G01B11/02 , G01B9/02
CPC分类号： G03F7/706 , G01M11/0264
摘要： Aberrations in a lens and lens system are identified by projecting an optical beam through a mask having an opening (probe) and a surrounding open geometry (pattern) and through the lens to an image plane. Lens aberrations are identified from the combined intensity of the beam in the image plane. In one embodiment the pattern is a plurality of rings concentric with the probe. Spillover between the probe and the geometry becomes intermixed in passing through the lens and alters the light intensity in the image plane. Vision of a patient can be tested by providing a plurality of probe openings and surrounding geometries that are illuminated. The patient then compares the images for brighter and darker probes as a measure of pupil aberrations. Areas in an integrated circuit mask layout impacted by aberrations in projection printing can be identified by sequentially comparing an aberration function to a mask layout, which can then be used to modify the mask layout.

2. 发明授权

US06686132B2 Method and apparatus for enhancing resist sensitivity and resolution by application of an alternating electric field during post-exposure bake 有权
标题翻译：用于通过在后曝光烘烤期间施加交变电场来提高抗蚀剂敏感性和分辨率的方法和装置
公开(公告)号：US06686132B2
公开(公告)日：2004-02-03
申请号：US09840638
申请日：2001-04-20
申请人： MoSong Cheng , Andrew R. Neureuther
发明人： MoSong Cheng , Andrew R. Neureuther
IPC分类号： G03F700
CPC分类号： G03F7/38 , G03F7/0382 , G03F7/0392
摘要： A method for enhancing resist sensitivity and resolution based on influencing the effects of photoacid drift and diffusion by an externally applied electric field that may optionally include a direct current offset bias is disclosed. An electric field applied to the resist film during post exposure bake (PEB) enhances photoacid drift in the direction of the applied electric field, reduces bake time, and results in less undesired diffusion. Electric-field enhanced PEB can reduce PEB time by about 30%, and at the same time, improve the sharpness of 2D corners and increase the verticality of resist sidewalls. Electric-field-enhanced PEB also significantly improves the tolerance of over-exposure and provides better critical dimension control. It is estimated that the lateral acid diffusion length is reduced by about 50%. An apparatus for carrying out the aforementioned method is also provided.
摘要翻译：公开了一种用于增强抗蚀剂灵敏度和分辨率的方法，该方法基于影响可能包括直流偏置偏置的外部施加电场的光致酸漂移和扩散的影响。在后曝光烘烤（PEB）中施加到抗蚀剂膜的电场增强了在施加电场的方向上的光酸漂移，减少了烘烤时间，并且导致较少的不期望的扩散。电场增强型PEB可以将PEB时间减少约30％，同时提高2D角的清晰度，增加抗蚀剂侧壁的垂直度。电场增强型PEB还显着提高了过度曝光的公差，并提供了更好的临界尺寸控制。估计侧向酸扩散长度减少约50％。还提供了一种用于执行上述方法的装置。

3. 发明授权

US07648802B2 Phase shifting test mask patterns for characterizing illumination and mask quality in image forming optical systems 失效
标题翻译：用于表征成像光学系统中的照明和掩模质量的相移测试掩模图案
公开(公告)号：US07648802B2
公开(公告)日：2010-01-19
申请号：US11053725
申请日：2005-02-07
申请人： Andrew R. Neureuther , Gregory R. McIntyre
发明人： Andrew R. Neureuther , Gregory R. McIntyre
IPC分类号： G03F1/00 , G06K9/00 , G01B11/24 , G03C5/00
CPC分类号： G03F7/706 , G03F1/30 , G03F1/32 , G03F1/44
摘要： The present invention presents three new classes of phase-shifting mask patterns. In optical image forming systems, a mask with phase shifted regions can act as a precision instrument for characterizing imaging. Three new classes of phase-shifting mask patterns have been invented to characterize projection printing tool illumination and phase-shifting mask (PSM) performance. The linear phase grating (LPG) and linear phase ring (LPR) both serve to characterize illumination angular distribution and uniformity. A third new class, the interferometric-probe monitor for phase-shifting masks (IPM-PSM), measures the effective phase, transmittance and edge effects of various phase-shifted mask features. All three patterns allow performance comparison across the field, tool-to-tool, over time, or to intended design.
摘要翻译：本发明提出三种新类型的相移掩模图案。在光学图像形成系统中，具有相移区域的掩模可以用作表征成像的精密仪器。已经发明了三种新类型的相移掩模图案来表征投影印刷工具照明和相移掩模（PSM）性能。线性相位光栅（LPG）和线性相位环（LPR）都用于表征照明角分布和均匀性。第三个新类别，用于相移掩模（IPM-PSM）的干涉测量探头监测器测量各种相移掩模特征的有效相位，透射率和边缘效应。所有这三种模式都允许整个领域的性能比较，工具对工具，随着时间的推移，或预期的设计。

4. 发明授权

US07224458B2 Phase-shifting test mask patterns for characterizing illumination polarization balance in image forming optical systems 有权
标题翻译：用于表征成像光学系统中的照明偏振平衡的相移测试掩模图案
公开(公告)号：US07224458B2
公开(公告)日：2007-05-29
申请号：US11357803
申请日：2006-02-16
申请人： Gregory R. McIntyre , Andrew R. Neureuther
发明人： Gregory R. McIntyre , Andrew R. Neureuther
IPC分类号： G01J4/00
CPC分类号： G01J4/04 , G03F7/70566 , G03F7/70591
摘要： A method to monitor the state of polarization incident on a photomask in projection printing is presented. The method includes a series of phase-shifting mask patterns that take advantage of high NA effects to create a signal dependent on only one incident polarization component. The patterns include in two embodiments a Radial Phase Grating (RPG) and Proximity Effect Polarization Analyzers (PEPA). A test reticle design includes multiple polarimeters with an array of pinholes on the backside of the photomask. This technique is able to monitor any arbitrary illumination scheme for a particular tool.
摘要翻译：提出了一种在投影印刷中监控入射到光掩模上的偏振状态的方法。该方法包括利用高NA效应产生仅依赖于一个入射偏振分量的信号的一系列相移掩模图案。这些图案包括两个实施例中的径向相位光栅（RPG）和接近效应极化分析器（PEPA）。测试标线设计包括在光掩模背面具有针孔阵列的多个偏振计。该技术能够监视特定工具的任意照明方案。

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